In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

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Abner McDowell
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1 Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of or use Instead of sales.addresses@ or sales.addresses@ use salesaddresses@nexperia.com ( ) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

2 Rev April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level threshold compatible Surface-mounted package Very fast switching TrenchMOS technology.3 Applications Logic level translator High-speed line driver.4 Quick reference data V DS 6 V R DSon 3 Ω I D 385 ma P tot.83 W 2. Pinning information Table : Pinning Pin Description Simplified outline Symbol gate (G) 2 source (S) 3 3 drain (D) 2 SOT23 D G mbb76 S

3 3. Ordering information Table 2: Ordering information Type number Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage 25 C T j 5 C - 6 V V DGR drain-gate voltage (DC) 25 C T j 5 C; R GS =2kΩ - 6 V V GS gate-source voltage - ±3 V V GSM peak gate-source voltage t p 5 µs; pulsed; duty cycle = 25 % - ±4 V I D drain current T sp =25 C; V GS = V; see Figure 2 and ma T sp = C; V GS = V; see Figure ma I DM peak drain current T sp =25 C; pulsed; t p µs; see Figure A P tot total power dissipation T sp =25 C; see Figure -.83 W T stg storage temperature C T j junction temperature C Source-drain diode I S source current T sp =25 C ma I SM peak source current T sp =25 C; pulsed; t p µs -.5 ma _3 Product data sheet Rev April 26 2 of 2

4 2 3aa7 2 3aa25 P der (%) I der (%) T sp ( C) T sp ( C) P der P tot I D = % I P der = % I tot ( 25 C ) D25 ( C ) Fig. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 3ai I D (A) Limit R DSon = V DS / I D t p = µs µs - DC ms ms ms -2 2 V DS (V) Fig 3. T sp =25 C; I DM is single pulse Safe operating area; continuous and peak drain currents as a function of drain-source voltage _3 Product data sheet Rev April 26 3 of 2

5 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder point see Figure K/W R th(j-a) thermal resistance from junction to ambient [] K/W [] Mounted on a printed-circuit board; minimum footprint; vertical in still air 3 3aab358 Z th(j-sp) (K/W) 2 δ = single pulse t p (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration _3 Product data sheet Rev April 26 4 of 2

6 6. Characteristics Table 5: Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D =µa; V GS =V voltage T j =25 C V T j = 55 C V V GS(th) gate-source threshold voltage I D =.25 ma; V DS =V GS ; see Figure 9 and T j =25 C V T j = 5 C V T j = 55 C V I DSS drain leakage current V DS =48V; V GS =V T j =25 C - - µa T j = 5 C - - µa I GSS gate leakage current V GS = ±5 V; V DS = V - na R DSon drain-source on-state resistance V GS = V; I D = 5 ma; see Figure 6 and 8 T j =25 C Ω T j = 5 C Ω V GS = 4.5 V; I D = 75 ma; see Figure 6 and Ω Dynamic characteristics Q G(tot) total gate charge I D = 3 ma; V DS =3V; V GS =V; nc Q GS gate-source charge see Figure and nc Q GD gate-drain charge nc C iss input capacitance V GS =V; V DS = V; f = MHz; pf C oss output capacitance see Figure pf C rss reverse transfer capacitance pf t on turn-on time V DS =5V; R L = 25 Ω; V GS =V; ns t off turn-off time R G =5Ω; R GS =5Ω - 5 ns Source-drain diode V SD source-drain voltage I S = 3 ma; V GS = V; see Figure V t rr reverse recovery time I S = 3 ma; di S /dt = A/µs; V GS =V ns Q r recovered charge nc _3 Product data sheet Rev April 26 5 of 2

7 I D (A).8 5 3ai R DSon (mω) 4 V GS (V) = 4 3ai V GS (V) = V DS (V) I D (A) T j =25 C T j =25 C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values 3ai aa28 I D (A) a T j = 5 C 25 C V GS (V) T j ( C) T j =25 C and 5 C; V DS >I D R DSon R a = DSon R DSon ( 25 C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature _3 Product data sheet Rev April 26 6 of 2

8 3 3aab -3 3aab V GS(th) (V) max I D (A) 2 typ -4 min typ max min T j ( C) V GS (V) Fig 9. I D =.25 ma; V DS =V GS T j =25 C; V DS =5V Gate-source threshold voltage as a function of junction temperature Fig. Sub-threshold drain current as a function of gate-source voltage V GS (V) 8 I D =.3 A T j = 25 C V DS = 3 V 3aab359 V DS 6 I D V GS(pl) 4 V GS(th) 2 V GS Q GS Q GS Q G (nc) Q GS Q GD Q G(tot) 3aaa58 I D =.3 A; V DS =3V Fig. Gate-source voltage as a function of gate charge; typical values Fig 2. Gate charge waveform definitions _3 Product data sheet Rev April 26 7 of 2

9 3ai7 2 3ai8 I S (A).8 C (pf) C iss.6.4 C oss.2 5 C T j = 25 C C rss V SD (V) - V DS (V) 2 T j =25 C and 5 C; V GS =V Fig 3. Source current as a function of source-drain voltage; typical values V GS = V; f = MHz Fig 4. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _3 Product data sheet Rev April 26 8 of 2

10 7. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e bp w M B Lp e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE Fig 5. Package outline SOT23 _3 Product data sheet Rev April 26 9 of 2

11 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes _ Product data sheet - - _2 Modifications: Table 5 Characteristics : V GS(th) I D condition modified Table 5 Characteristics : V GS(th) maximum limits modified Table 5 Characteristics : R DSon typical values modified Table 5 Characteristics : g fs removed Table 5 Characteristics : Addition of Q G(tot), Q GS and Q GD Table 5 Characteristics : C iss, C oss and C rss values modified Table 5 Characteristics : t on and t off typical values modified Figure 3, 4, 5, 6, 7, 9,, 3 and 4: modified Figure : added _ Product data sheet Product data _3 Product data sheet Rev April 26 of 2

12 9. Data sheet status Level Data sheet status [] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2. Trademarks Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 3. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ _3 Product data sheet Rev April 26 of 2

13 4. Contents Product profile General description Features Applications Quick reference data Pinning information Ordering information Limiting values Thermal characteristics Characteristics Package outline Revision history Data sheet status Definitions Disclaimers Trademarks Contact information Koninklijke Philips Electronics N.V. 26 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 April 26 Document number: _3 Published in The Netherlands

2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 6 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level