BLF4G10LS-120. UHF power LDMOS transistor. G p (db) P L (W)

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1 Rev. 1 1 January 26 Product data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1: Typical performance f = 92 MHz to 96 MHz; T h =25 C; in a class-ab production test circuit; typical values. Mode of operation V DS (V) P L (W) [1] ACPR 4 at 3 khz resolution bandwidth [2] ACPR 6 at 3 khz resolution bandwidth (db) η D ACPR 4 ACPR 6 EVM IMD3 CW GSM EDGE (AV) [1] 72 [2] tone (PEP) CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical GSM EDGE performance at a frequency of 92 MHz and 96 MHz, a supply voltage of 28 V and an I Dq of 65 ma Load power = 48 W (AV) Gain = 19 db (typ) Efficiency = 4 % (typ) ACPR 4 = 61 dbc (typ) ACPR 6 = 72 dbc (typ) EVM rms = 1.5 % (typ) Easy power control Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (8 MHz to 1 MHz) Internally matched for ease of use

2 1.3 Applications 2. Pinning information RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 868 MHz to 961 MHz frequency range. Table 2: Pinning Pin Description Simplified outline Symbol 1 drain 2 gate source 3 [1] sym39 [1] Connected to flange 3. Ordering information 4. Limiting values Table 3: Ordering information Type number Package Name Description Version - earless flanged LDMOST ceramic package; 2 leads SOT52B 5. Thermal characteristics Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage - 65 V V GS gate-source voltage V I D drain current - 12 A T stg storage temperature C T j junction temperature - 2 C Table 5: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-case) thermal resistance from junction to case T case =8 C P L = 6 W K/W P L = 12 W K/W Product data sheet Rev. 1 1 January 26 2 of 13

3 6. Characteristics 7. Application information Table 6: Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V (BR)DSS drain-source breakdown V GS =V; I D =.9 ma V voltage V GS(th) gate-source threshold V DS =1V; I D = 18 ma V voltage V GSq gate-source quiescent V DS =28V; I D = 9 ma V voltage I DSS drain leakage current V GS =V; V DS =28V µa I DSX drain cut-off current V GS =V GS(th) +9V; A V DS =1V I GSS gate leakage current V GS =15V; V DS = V na g fs forward transconductance V DS =1V; I D = 1 A S R DS(on) drain-source on-state resistance V GS =V GS(th) +6V; I D =6A C rs feedback capacitance V GS =V; V DS =28V; f = 1 MHz mω pf Table 7: Application information Mode of operation: GSM EDGE; f = 92 MHz and 96 MHz; RF performance at V DS = 28 V; I Dq = 65 ma; T case =25 C; unless otherwise specified, in a class AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit power gain P L(AV) = 48 W db IRL input return loss P L(AV) = 48 W db η D drain efficiency P L(AV) = 48 W % ACPR 4 adjacent channel power ratio (4 khz) P L(AV) = 48 W dbc ACPR 6 adjacent channel power ratio (6 khz) P L(AV) = 48 W dbc EVM rms rms EDGE signal distortion error P L(AV) = 48 W % EVM M peak EDGE signal distortion error P L(AV) = 48 W % 7.1 Ruggedness in class-ab operation The is capable of withstanding a load mismatch corresponding to VSWR = 1 : 1 through all phases under the following conditions: V DS =28V; I Dq = 65 ma; P L = 12 W (CW); f = 96 MHz. Product data sheet Rev. 1 1 January 26 3 of 13

4 2 (db) 18 1aac41 7 ηd 6 2 (db) 18 1aac411 6 ηd η D η D P L (W) P L(AV) (W) V DS = 28 V; I Dq = 65 ma; T case =25 C; f = 96 MHz V DS =28V; I Dq = 65 ma; T case =25 C; f = 96 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efficiency as functions of average load power; typical values 1aac412 1aac413 IMD IMD IMD3 4 (1) (2) 6 IMD5 IMD7 6 (4) (3) P L(AV) (W) P L(AV) (W) Fig 3. V DS = 28 V; I Dq = 65 ma; T case =25 C; f = 96 MHz Intermodulation distortion as a function of average load power; typical values Fig 4. V DS =28V; T case =25 C; f = 96 MHz (1) I Dq = 55 ma (2) I Dq = 65 ma (3) I Dq = 75 ma (4) I Dq = 85 ma Third order intermodulation distortion as a function of average load power; typical values Product data sheet Rev. 1 1 January 26 4 of 13

5 2 1aac aac415 (db) 19 4 η D ACPR 6 ACPR η D 7 ACPR P L(AV) (W) P L(AV) (W) V DS =28V; I Dq = 65 ma; T case =25 C; f = 96 MHz V DS =28V; I Dq = 65 ma; T case =25 C; f = 96 MHz Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values Fig 6. GSM EDGE ACPR at 4 khz and at 6 khz as a function of average load power; typical values 1 EVM 8 EVM M 1aac ACPR 6 1aac EVM ACPR EVM rms 68 EVM rms P L(AV) (W) η D V DS = 28 V; I Dq = 65 ma; T case =25 C; f = 96 MHz V DS =28V; I Dq = 65 ma; T case =25 C; f = 96 MHz Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values Fig 8. GSM EDGE ACPR at 4 khz and rms EVM as functions of drain efficiency; typical values Product data sheet Rev. 1 1 January 26 5 of 13

6 Product data sheet Rev. 1 1 January 26 6 of 13 Fig 9. RF in xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x C1 V GS C2 See Table 8 for list of components. C9 R1 Class-AB test circuit at f = 96 MHz C5 C6 C7 C8 V DS C1 C3 C4 RF out 1aad83 8. Test information Philips Semiconductors

7 Product data sheet Rev. 1 1 January 26 7 of 13 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx C1 Striplines are on a double copper-clad Rogers 66 Printed-Circuit Board (PCB) (ε r = 6.2); thickness =.25 inches. See Table 8 for list of components. Fig 1. Component layout for 96 MHz test circuit C2 V GS C9 R1 C5 PHILIPS BLF4G1-12 rev.1 in PHILIPS BLF4G1-12 rev.1 out V DS C6 C7 C8 C1 C3 C4 1aad831 Philips Semiconductors

8 Table 8: List of components (see Figure 9 and Figure 1) Component Description Value Dimensions Catalogue number C1, C4, C5, C6 multilayer ceramic chip [1] 68 pf capacitor C2 multilayer ceramic chip [1] 5.1 pf capacitor C3 multilayer ceramic chip capacitor [1] 3. pf C7 multilayer ceramic chip 1 µf 1812X7R15KL2AB capacitor C8, C9 tantalum capacitor 1 µf; 35 V C1 Philips electrolytic capacitor 22 µf R1 Philips chip resistor 5.1 Ω 63 [1] American Technical Ceramics type 1B or capacitor of same quality. Product data sheet Rev. 1 1 January 26 8 of 13

9 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT52B D A 3 F D 1 D U 1 c L 1 H U 2 E 1 E 2 b w 2 M D M Q 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 E E 1 F H L Q U 1 U 2 w 2 mm inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT52B Fig 11. Package outline SOT52B Product data sheet Rev. 1 1 January 26 9 of 13

10 1. Abbreviations Table 9: Acronym CDMA CW EDGE ESR EVM GSM I Dq LDMOS PEP RF SMD VSWR Abbreviations Description Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Equivalent Series Resistance Error Vector Magnitude Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak Envelope Power Radio Frequency Surface Mount Device Voltage Standing Wave Ratio Product data sheet Rev. 1 1 January 26 1 of 13

11 11. Revision history Table 1: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes _ Product data sheet Product data sheet Rev. 1 1 January of 13

12 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Product data sheet Rev. 1 1 January of 13

13 17. Contents 1 Product profile General description Features Applications Pinning information Ordering information Limiting values Thermal characteristics Characteristics Application information Ruggedness in class-ab operation Test information Package outline Abbreviations Revision history Data sheet status Definitions Disclaimers Trademarks Contact information Koninklijke Philips Electronics N.V. 26 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 January 26 Document number: Published in The Netherlands