Dual N-channel dual gate MOSFET

Transcription

1 Rev March 25 Product data sheet 1. Product profile 1.1 General description The is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC Features Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage digital and analog television tuners professional communication equipment

2 1. Quick reference data 2. Pinning information Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage (DC) V drain current (DC) ma P tot total power dissipation T sp 19 C [1] mw y fs forward transfer admittance f = 1 MHz amplifier A; =19mA ms amplifier B; =13mA ms C iss(g1) input capacitance at gate1 f = 1 MHz amplifier A pf amplifier B pf C rss reverse transfer capacitance f = 1 MHz ff NF noise figure amplifier A; f = MHz db amplifier B; f = 8 MHz db Xmod cross-modulation input level for k = 1 % at db AGC amplifier A dbµv amplifier B dbµv T j junction temperature C [1] T sp is the temperature at the soldering point of the source lead. Table 2: Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 2 gate gate1 (AMP B) G1A drain (AMP B) 5 source G2 6 drain (AMP A) AMP A DA S G1B AMP B sym89 DB Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 2 of 22

3 3. Ordering information. Marking Table 3: Ordering information Type number Package Name Description Version - plastic surface mounted package; 6 leads SOT666 Table : Marking codes Type number Marking code 2L 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 613). Symbol Parameter Conditions Min Max Unit Per MOSFET V DS drain-source voltage (DC) - 6 V drain current (DC) - 3 ma I G1 gate1 current - ±1 ma I G2 gate2 current - ±1 ma P tot total power dissipation T sp 19 C [1] - 18 mw T stg storage temperature C T j junction temperature - 15 C [1] T sp is the temperature at the soldering point of the source lead. 25 1aac193 P tot (mw) T sp ( C) Fig 1. Power derating curve Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 3 of 22

4 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to solder point 225 K/W 7. Static characteristics Table 7: Static characteristics T j =25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise specified V (BR)DSS drain-source breakdown voltage V G1-S =V G2-S =V; =1µA amplifier A V amplifier B V V (BR)G1-SS gate1-source breakdown voltage V G2-S =V DS =V; I G1-S =1mA 6-1 V V (BR)G2-SS gate2-source breakdown voltage V G1-S =V DS =V; I G2-S =1mA 6-1 V V F(S-G1) forward source-gate1 voltage V G2-S =V DS =V; I S-G1 = 1 ma V V F(S-G2) forward source-gate2 voltage V G1-S =V DS =V; I S-G2 = 1 ma V V G1-S(th) gate1-source threshold voltage V DS =5V; V G2-S =V; = 1 µa.3-1. V V G2-S(th) gate2-source threshold voltage V DS =5V; V G1-S =5V; = 1 µa V SX drain-source current V G2-S =V; V DS(B) =5V; R G1 = 15 kω amplifier A; V DS(A) =5V [1] 1-2 ma amplifier B; V DS(B) =5V [2] 9-17 ma I G1-S gate1 cut-off current V G2-S =V DS(A) =V amplifier A; V G1-S(A) =5V; (B) =A na amplifier B; V G1-S(B) =5V; V DS(B) = V na I G2-S gate2 cut-off current V G2-S =V; V G1-S(B) =V; V G1-S(A) =V DS(A) =V DS(B) =V na [1] R G1 connects gate1 (B) to V GG = V (see Figure 3). [2] R G1 connects gate1 (B) to V GG = 5 V (see Figure 3) Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 of 22

5 2 1aaa (1) G1A DA 12 (2) G2 S 8 (3) G1B DB () R G1 (6) V GG 1aac V GG (V) (1) (B) ; R G1 = 12 kω. (2) (B) ; R G1 = 15 kω. (3) (B) ; R G1 = 18 kω. () (A) ; R G1 = 18 kω. (A) ; R G1 = 15 kω. (6) (A) ; R G1 = 12 kω. Fig 2. Drain currents of MOSFET A and B as a function of gate1 supply voltage Fig 3. V GG = 5 V: amplifier A is off; amplifier B is on. V GG = V: amplifier A is on; amplifier B is off. Functional diagram 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A [1] Common source; T amb =25 C; V G2-S =V; V DS =5V; = 19 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit y fs forward transfer admittance T j =25 C ms C iss(g1) input capacitance at gate1 f = 1 MHz pf C iss(g2) input capacitance at gate2 f = 1 MHz pf C oss output capacitance f = 1 MHz pf C rss reverse transfer capacitance f = 1 MHz ff G tr power gain B S =B S(opt) ; B L =B L(opt) f = 2 MHz; G S = 2 ms; G L =.5 ms db f = MHz; G S = 2 ms; G L = 1 ms db f = 8 MHz; G S = 3.3 ms; G L =1mS db NF noise figure f = 11 MHz; G S = 2 ms; B S = S db f = MHz; Y S =Y S(opt) db f = 8 MHz; Y S =Y S(opt) db Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 5 of 22

6 Table 8: Dynamic characteristics for amplifier A [1] continued Common source; T amb =25 C; V G2-S =V; V DS =5V; = 19 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Xmod cross-modulation input level for k = 1 %; f w = 5 MHz; f unw =6MHz at db AGC dbµv at 1 db AGC dbµv at 2 db AGC dbµv at db AGC dbµv [1] For the MOSFET not in use: V G1-S(B) = V; V DS(B) =V. [2] Measured in Figure 33 test circuit Graphics for amplifier A [2] 3 2 1aaa55 (1) (2) (3) () aaa555 (1) (2) (3) 16 () (6) 1 (6) (7) 8 (8) (9) (7) Fig V G1-S (V) (1) V G2-S =V. (2) V G2-S = 3.5 V. (3) V G2-S =3V. () V G2-S = 2.5 V. V G2-S =2V. (6) V G2-S = 1.5 V. (7) V G2-S =1V. V DS(A) =5V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: transfer characteristics; typical values Fig V DS (V) (1) V G1-S(A) = 1.8 V. (2) V G1-S(A) = 1.7 V. (3) V G1-S(A) = 1.6 V. () V G1-S(A) = 1.5 V. V G1-S(A) = 1. V. (6) V G1-S(A) = 1.3 V. (7) V G1-S(A) = 1.2 V. (8) V G1-S(A) = 1.1 V. (9) V G1-S(A) =1V. V G2-S =V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: output characteristics; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 6 of 22

7 1aaa aac26 y fs (ms) 3 (1) (2) (A) (3) 8 1 () (6) (B) (µa) Fig 6. (1) V G2-S =V. (2) V G2-S = 3.5 V. (3) V G2-S =3V. () V G2-S = 2.5 V. V G2-S =2V. (6) V G2-S = 1.5 V. V DS(A) =5V; V G1-S(B) =V DS(B) =V; T j =25 C. Amplifier A: forward transfer admittance as a function of drain current; typical values Fig 7. V DS(A) =5V; V G2-S =V; V DS(B) =5V; V G1-S(B) =V; T j =25 C. (B) = internal G1 current = current in pin drain (B) if MOSFET (B) is switched off. Amplifier A: drain current as a function of internal G1 current; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 7 of 22

8 2 1aaa aaa (1) (2) (3) () (6) V supply (V) 2 6 V G2-S (V) Fig 8. V DS(A) =V DS(B) =V supply ; V G2-S =V; T j =25 C; R G1 = 15 kω (connected to ground); see Figure 3. Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical values Fig 9. (1) V DS(B) =5V. (2) V DS(B) =.5 V. (3) V DS(B) =V. () V DS(B) = 3.5 V. V DS(B) =3V. (6) V DS(B) = 2.5 V. V DS(A) =5V; V G1-S(B) = V; gate1 (A) = open; T j =25 C. Amplifier A: drain current as a function of gate2 voltage; typical values 12 V unw (dbµv) 11 1aac195 gain reduction (db) 1 1aac gain reduction (db) V DS(A) =V DS(B) =5V; V G1-S(B) =V; f w = 5 MHz; f unw = 6 MHz; T amb =25 C; see Figure 33. Fig 1. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values V AGC (V) V DS(A) =V DS(B) =5V; V G1-S(B) = V; f = 5 MHz; see Figure 33. Fig 11. Amplifier A: gain reduction as a function of AGC voltage; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 8 of 22

9 28 1aac aac566 b is, g is (ms) 1 2 b is g is gain reduction (db) V DS(A) =V DS(B) =5V; V G1-S(B) = V; f = 5 MHz; T amb =25 C; see Figure 33. Fig 12. Amplifier A: drain current as a function of gain reduction; typical values f (MHz) V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 13. Amplifier A: input admittance as a function of frequency; typical values 1 2 1aac aac y fs (ms) y fs ϕ fs y rs (µs) 1 2 ϕ rs ϕ rs ϕ fs 1 y rs f (MHz) V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 1. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values f (MHz) V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 9 of 22

10 1 1aac569 b os, g os (ms) 1 b os 1 1 g os f (MHz) V DS(A) =5V; V G2-S =V; V DS(B) =V G1-S(B) =V; (A) =19mA Fig 16. Amplifier A: output admittance as a function of frequency; typical values Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A V DS(A) =5V; V G2-S =V; (A) = 19 ma; V DS(B) =V;V G1-S(B) =V; T amb = 25 C; typical values. f (MHz) s 11 s 21 s 12 s 22 Magnitude (ratio) Angle Noise data for amplifier A Magnitude (ratio) Angle Magnitude (ratio) Angle Magnitude (ratio) Angle Table 1: Noise data for amplifier A V DS(A) =5V; V G2-S =V; (A) = 19 ma; V DS(B) =V; V G1-S(B) =V; T amb =25 C; typical values; unless otherwise specified. f (MHz) NF min (db) Γ opt r n (Ω) ratio Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 1 of 22

11 8.2 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B [1] Common source; T amb =25 C; V G2-S =V; V DS =5V; = 13 ma; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit y fs forward transfer admittance T j =25 C ms C iss(g1) input capacitance at gate1 f = 1 MHz pf C iss(g2) input capacitance at gate2 f = 1 MHz pf C oss output capacitance f = 1 MHz pf C rss reverse transfer capacitance f = 1 MHz ff G tr power gain B S =B S(opt) ; B L =B L(opt) f = 2 MHz; G S = 2 ms; G L =.5 ms db f = MHz; G S = 2 ms; G L =1mS db f = 8 MHz; G S = 3.3 ms; G L =1mS db NF noise figure f = 11 MHz; G S = 2 ms; B S =S db f = MHz; Y S =Y S(opt) db f = 8 MHz; Y S =Y S(opt) db Xmod cross-modulation input level for k = 1 %; f w = 5 MHz; f unw =6MHz [2] at db AGC dbµv at 1 db AGC dbµv at 2 db AGC dbµv at db AGC dbµv [1] For the MOSFET not in use: V G1-S(A) = V; V DS(A) = V. [2] Measured in Figure 3 test circuit Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

12 8.2.1 Graphics for amplifier B 3 1aaa568 (1) () 32 1aaa569 2 (2) (3) 2 (1) (2) (3) 16 () 1 (6) 8 (6) (7) (7) V G1-S (V) (1) V G2-S =V. (2) V G2-S = 3.5 V. (3) V G2-S =3V. () V G2-S = 2.5 V. V G2-S =2V. (6) V G2-S = 1.5 V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Fig 17. Amplifier B: transfer characteristics; typical values 2 6 V DS (V) (1) V G1-S(B) = 1.6 V. (2) V G1-S(B) = 1.5 V. (3) V G1-S(B) = 1. V. () V G1-S(B) = 1.3 V. V G1-S(B) = 1.2 V. (6) V G1-S(B) = 1.1 V. (7) V G1-S(B) =1V. V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C. Fig 18. Amplifier B: output characteristics; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

13 1 I G1 (µa) 8 1aaa57 (1) (2) (3) y fs (ms) 3 1aaa571 (1) (2) (3) 6 () () 2 2 (7) V G1-S (V) (1) V G2-S =V. (2) V G2-S = 3.5 V. (3) V G2-S =3V. () V G2-S = 2.5 V. V G2-S =2V. (6) V G2-S = 1.5 V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values (6) 1 (6) (7) (1) V G2-S =V. (2) V G2-S = 3.5 V. (3) V G2-S =3V. () V G2-S = 2.5 V. V G2-S =2V. (6) V G2-S = 1.5 V. (7) V G2-S =1V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C. Fig 2. Amplifier B: forward transfer admittance as a function of drain current; typical values 2 1aaa aaa I G1 (µa) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values V GG (V) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 kω (connected to V GG ); see Figure 3. Fig 22. Amplifier B: drain current as a function of gate1 supply voltage; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

14 2 16 1aaa57 (1) (2) (3) () aaa575 (1) (2) (3) () 8 (6) (7) (8) V GG = V DS (V) (1) R G1 =68kΩ. (2) R G1 =82kΩ. (3) R G1 = 1 kω. () R G1 = 12 kω. R G1 = 15 kω. (6) R G1 = 18 kω. (7) R G1 = 22 kω. (8) R G1 = 27 kω. V G2-S =V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 is connected to V GG ; see Figure 3. Fig 23. Amplifier B: drain current as a function of gate1 supply voltage and drain supply voltage; typical values 2 6 V G2-S (V) (1) V GG = 5. V. (2) V GG =.5 V. (3) V GG =. V. () V GG = 3.5 V. V GG = 3. V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 kω (connected to V GG ); see Figure 3. Fig 2. Amplifier B: drain current as a function of gate2 voltage; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 1 of 22

15 3 1aaa aac198 I G1 (µa) (1) (2) V unw (dbµv) 11 2 (3) () V G2-S (V) (1) V GG = 5. V. (2) V GG =.5 V. (3) V GG =. V. () V GG = 3.5 V. V GG = 3. V. V DS(B) =5V; V DS(A) =V G1-S(A) =V; T j =25 C; R G1 = 15 kω (connected to V GG ); see Figure 3. Fig 25. Amplifier B: gate1 current as a function of gate2 voltage; typical values gain reduction (db) V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 kω (connected to V GG ); f w = 5 MHz; f unw = 6 MHz; T amb =25 C; see Figure 3. Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values gain reduction (db) 1 1aac aac V AGC (V) V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 kω (connected to V GG ); f = 5 MHz; T amb =25 C; see Figure 3. Fig 27. Amplifier B: gain reduction as a function of AGC voltage; typical values gain reduction (db) V DS(B) =5V; V GG =5V; V DS(A) =V G1-S(A) =V; R G1 = 15 kω (connected to V GG ); f = 5 MHz; T amb =25 C; see Figure 3. Fig 28. Amplifier B: drain current as a function of gain reduction; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

16 1 2 1aac aac b is, g is (ms) 1 y fs (ms) y fs ϕ fs b is g is ϕ fs f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 29. Amplifier B: input admittance as a function of frequency; typical values f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 3. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 1 3 1aac aac573 y rs (µs) ϕ rs b os, g os (ms) 1 2 ϕ rs b os y rs g os f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 31. Amplifier B: reverse transfer admittance and phase as a function of frequency; typical values f (MHz) V DS(B) =5V; V G2-S =V; V DS(A) =V G1-S(A) =V; (B) =13mA Fig 32. Amplifier B: output admittance as a function of frequency; typical values Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

17 8.2.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifier B V DS(B) =5V; V G2-S =V; (B) = 13 ma; V DS(A) =V;V G1-S(A) =V; T amb = 25 C; typical values. f (MHz) s 11 s 21 s 12 s 22 Magnitude (ratio) Angle Noise data for amplifier B Magnitude (ratio) Angle Magnitude (ratio) Angle Magnitude (ratio) Angle Table 13: Noise data for amplifier B V DS(B) =5V; V G2-S =V; (B) = 13 ma; V DS(A) =V; V G1-S(A) =V; T amb =25 C; typical values; unless otherwise specified. f (MHz) NF min (db) Γ opt r n (Ω) ratio Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

18 9. Test information V AGC V DS(A) 5V.7 nf 1 kω L1 2.2 µh.7 nf G1A DA.7 nf RGEN 5 Ω 5 Ω.7 nf G2 S RL 5 Ω V i.7 nf G1B DB 5 Ω RG1 L2 2.2 µh.7 nf V GG V V DS(B) 5V 1aac21 Fig 33. Cross-modulation test set-up for amplifier A V AGC V DS(A) 5V.7 nf.7 nf 1 kω G1A DA L1 2.2 µh 5 Ω.7 nf G2 S.7 nf G1B DB.7 nf RGEN 5 Ω 5 Ω RG1 L2 2.2 µh RL 5 Ω V i.7 nf V GG 5V V DS(B) 5V 1aac22 Fig 3. Cross-modulation test set-up for amplifier B Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

19 1. Package outline Plastic surface mounted package; 6 leads SOT666 D A E X S Y S H E 6 5 pin 1 index A c e1 bp w M A Lp e detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b p c D E e e 1 H E L p w y mm OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT Fig 35. Package outline SOT Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

20 11. Revision history Table 1: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes _ Product data sheet Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March 25 2 of 22

21 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 1. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 613). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Koninklijke Philips Electronics N.V. 25. All rights reserved. Product data sheet Rev March of 22

22 16. Contents 1 Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Static characteristics Dynamic characteristics Dynamic characteristics for amplifier A Graphics for amplifier A Scattering parameters for amplifier A Noise data for amplifier A Dynamic characteristics for amplifier B Graphics for amplifier B Scattering parameters for amplifier B Noise data for amplifier B Test information Package outline Revision history Data sheet status Definitions Disclaimers Contact information Koninklijke Philips Electronics N.V. 25 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 March 25 Document number: Published in The Netherlands