BF1100; BF1100R IMPORTANT NOTICE. use

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1 BF; BFR Rev. 3 November 7 Product data sheet IMPORTANT NOTICE Dear customer, As from October st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. use use (Internet) sales.addresses@ use salesaddresses@nxp.com ( ) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.. (year). All rights reserved - is replaced with: - NXP B.. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

2 BF; BFR FEATURES Specially designed for use at 9 to supply voltage Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to GHz Superior cross-modulation performance during AGC. APPLICATIONS HF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT43 or SOT43R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION s, b source d drain 3 g gate 4 g gate d d g g g g Top view MAM4 s,b Top view MAM5 - s,b BF marking code: %MY. Fig. Simplified outline (SOT43) and symbol. BFR marking code: %MZ. Fig. Simplified outline (SOT43R) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DS drain-source voltage 4 drain current 3 ma P tot total power dissipation mw T j operating junction temperature 5 C y fs forward transfer admittance ms C ig-s input capacitance at gate..6 pf C rs reverse transfer capacitance f=mhz 5 35 ff F noise figure f = 8 MHz db Rev. - 3 November 7 of 5

3 BF; BFR LIMITING ALUES In accordance with the Absolute Maximum Rating System (IEC 34). Note SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT DS drain-source voltage 4 drain current 3 ma I G gate current ± ma I G gate current ± ma P tot total power dissipation see Fig.3 BF up to T amb =5 C; note mw BFR up to T amb =4 C; note mw T stg storage temperature C T j operating junction temperature +5 C. Device mounted on a printed-circuit board. 5 P tot (mw) MLD55 4 Y fs 3 MLD56 5 BFR BF T amb ( o C) o T j ( C) Fig.3 Power derating curves. Fig.4 Forward transfer admittance as a function of junction temperature; typical values. Rev. - 3 November 7 3 of 5

4 BF; BFR THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS ALUE UNIT R th j-a thermal resistance from junction to ambient note BF 5 K/W BFR 55 K/W R th j-s thermal resistance from junction to soldering point note BF T s =9 C 9 K/W BFR T s =78 C 36 K/W Notes. Device mounted on a printed-circuit board.. T s is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS T j =5 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT (BR)G-SS gate -source breakdown voltage G-S = DS = ; I G-S = ma 3. (BR)G-SS gate -source breakdown voltage G-S = DS = ; I G-S = ma 3. (F)S-G forward source-gate voltage G-S = DS = ; I S-G = ma.5.5 (F)S-G forward source-gate voltage G-S = DS = ; I S-G = ma.5.5 G-S(th) gate -source threshold voltage G-S =4; DS =9; =µa Notes. R G connects gate to GG = 9 ; see Fig.7.. R G connects gate to GG = ; see Fig.7. G-S =4; DS =; =µa G-S(th) gate -source threshold voltage G-S =4; DS =9; =µa G-S =4; DS =; =µa SX drain-source current G-S =4; DS =9; R G = 8 kω; note G-S =4; DS =; R G = 5 kω; note ma 8 3 ma I G-SS gate cut-off current G-S = DS = ; G-S = 5 na I G-SS gate cut-off current G-S = DS = ; G-S = 5 na Rev. - 3 November 7 4 of 5

5 BF; BFR DYNAMIC CHARACTERISTICS Common source; T amb =5 C; G-S = 4 ; = ma; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; T j =5 C C ig-s input capacitance at gate f = MHz C ig-s input capacitance at gate f = MHz C os drain-source capacitance f = MHz C rs reverse transfer capacitance f = MHz DS = ms DS = ms DS =9..6 pf DS =..6 pf DS =9.6 pf DS =.4 pf DS =9.4.8 pf DS =..5 pf DS = ff DS = 5 35 ff F noise figure f = 8 MHz; G S =G Sopt ; B S =B Sopt DS =9.8 db DS =.8 db handbook, gain halfpage reduction (db) MLD57 unw (dbµ) () MLD58 () AGC () gain reduction (db) f = 5 MHz. Fig.5 Gain reduction as a function of the AGC voltage; typical values. () R G = 5 kω to GG = () R G = 8 kω to GG =9 f w = 5 MHz; f unw = 6 MHz; T amb =5 C. Fig.6 Unwanted voltage for % cross-modulation as a function of gain reduction; typical values; see Fig.7. Rev. - 3 November 7 5 of 5

6 BF; BFR 6 G S =.4.3 MLD59 6 MLD6 G S = DS () G S () G-S =4. DS = 9 to. Fig.7 Output characteristics; typical values. Fig.8 Transfer characteristics; typical values. 5 I G (µa) G S = MLD6 4 y fs 3 MLD6 G S = G S () 3 DS = 9 to. DS = 9 to. Fig.9 Gate current as a function of gate voltage; typical values. Fig. Forward transfer admittance as a function of drain current; typical values. Rev. - 3 November 7 6 of 5

7 BF; BFR 6 MLD63 R G = kω MLD64 47 kω 5 8 kω 5 kω 8 49 kω 3 kω 4 kω kω I G (µa) GG = DS () DS = 9 to. G-S =4. Fig. Drain current as a function of gate current; typical values. G-S =4. R G connected to GG. Fig. Drain current as a function of gate supply voltage (= GG ) and drain supply voltage; typical values; see Fig.7. MLD65 MLD GG () 4 8 GG () DS = 9 ; G-S =4. R G = 8 kω (connected to GG ); Fig.3 Drain current as a function of gate voltage (= GG ); typical values; see Fig.7. DS = ; G-S =4. R G = 5 kω (connected to GG ); Fig.4 Drain current as a function of gate voltage; (= GG ); typical values; see Fig.7. Rev. - 3 November 7 7 of 5

8 BF; BFR 5 I G (µa) 4 3 MLD67 GG = I G (µa) 4 3 MLD68 GG = G S () 4 6 G S () DS =9. R G = 8 kω (connected to GG ). Fig.5 Gate current as a function of gate voltage; typical values. DS =. R G = 5 kω (connected to GG ). Fig.6 Gate current as a function of gate voltage; typical values. 6 8 MLD69 GG = MLD7 GG = G S () 4 6 G S () DS =9. R G = 8 kω (connected to GG ). Fig.7 Drain current as a function of the gate voltage; typical values; see Fig.7. DS =. R G = 5 kω (connected to GG ). Fig.8 Drain current as a function of the gate voltage; typical values; see Fig.7. Rev. - 3 November 7 8 of 5

9 BF; BFR MLD7 3 MLD73 3 y is y rs (µs) ϕrs ϕ rs b is y rs g is 3 3 DS = 9 ; G =4. = ma; T amb =5 C. DS = 9 ; G =4. = ma; T amb =5 C. Fig.9 Input admittance as a function of frequency; typical values. Fig. Reverse transfer admittance and phase as a function of frequency; typical values. MLD74 MLD75 y fs y fs ϕ fs y os b os ϕ fs g os 3 3 DS = 9 ; G =4. = ma; T amb =5 C. DS = 9 ; G =4. = ma; T amb =5 C. Fig. Forward transfer admittance and phase as a function of frequency; typical values. Fig. Output admittance as a function of frequency; typical values. Rev. - 3 November 7 9 of 5

10 BF; BFR MLD76 3 MLD77 3 y is y rs (µs) ϕrs ϕ rs b is y rs g is 3 3 DS = ; G =4. = ma; T amb =5 C. DS = ; G =4. = ma; T amb =5 C. Fig.3 Input admittance as a function of frequency; typical values. Fig.4 Reverse transfer admittance and phase as a function of frequency; typical values. MLD78 MLD79 y fs y fs ϕ fs y os b os ϕ fs g os 3 3 DS = ; G =4. = ma; T amb =5 C. DS = ; G =4. = ma; T amb =5 C. Fig.5 Forward transfer admittance and phase as a function of frequency; typical values. Fig.6 Output admittance as a function of frequency; typical values. Rev. - 3 November 7 of 5

11 BF; BFR handbook, full pagewidth AGC R k Ω C 4.7 nf C3 pf R GEN 5 Ω I R 5 Ω C 4.7 nf R G GG L DUT 45 nh C4 4.7 nf DS R L 5 Ω MGC4 For GG = DS = 9, R G = 8 kω. For GG = DS =, R G = 5 kω. Fig.7 Cross-modulation test set-up. Rev. - 3 November 7 of 5

12 BF; BFR Table Scattering parameters: DS = 9 ; G-S = 4 ; =ma f (MHz) s s s s Table Noise data: DS = 9 ; G-S = 4 ; =ma f (MHz) F min (db) Γ opt r n Table 3 Scattering parameters: DS = ; G-S = 4 ; =ma f (MHz) s s s s Table 4 Noise data: DS = ; G-S = 4 ; =ma f (MHz) F min (db) Γ opt r n Rev. - 3 November 7 of 5

13 BF; BFR PACKAGE OUTLINES handbook, full pagewidth A B. M A B o. o o M A B MBC845.7 TOP IEW Dimensions in mm. Fig.8 SOT43. handbook, full pagewidth A B. M A o. o o MBC844. M B TOP IEW Dimensions in mm. Fig.9 SOT43R. Rev. - 3 November 7 3 of 5

14 BF; BFR Legal information Data sheet status Document status [][] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Rev. - 3 November 7 4 of 5

15 BF; BFR Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BF_N_ 73 Product data sheet - BF_ Modifications: Fig. and on page ; Figure note changed BF_ Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.. 7. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 3 November 7 Document identifier: BF_N_