DISCRETE SEMICONDUCTORS DATA SHEET. BLT53 UHF power transistor

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET May 99

2 FEATURES Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a -lead SOTD studless envelope with a ceramic cap. It is designed for common emitter, class-b operation in portable radio transmitters in the 7 MHz communications band. All leads are isolated from the mounting flange. PINNING - SOTD QUICK REFERENCE DATA RF performance at T mb = 5 C in a common emitter test circuit. MODE OF OPERATION PIN CONFIGURATION f (MHz) V CE (V) P L (W) G p (db) c.w. class-b > 6 > 6 WARNING Product and environmental safety - toxic materials η c (%) This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN DESCRIPTION collector emitter 3 base emitter alfpage 3 handbook, halfpage b c MBB e MSB55 Fig. Simplified outline and symbol. May 99

3 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 3). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CEO collector-emitter voltage open base V V EBO emitter-base voltage open collector 3 V I C, I C(AV) collector current DC or average value.5 A I CM collector current peak value 7.5 A f > MHz P tot total power dissipation RF operation; 35.5 W T mb = 5 C T stg storage temperature range 65 5 C T j junction operating temperature C handbook, halfpage I C (A) T mb = 5 o C MCD9 5 handbook, halfpage P tot (W) (3) () MCD93 7 o C 3 () V CE (V) 8 6 T mb ( o C) () Continuous DC operation. () Continuous RF operation (f > MHz). (3) Short time operation during mismatch (f > MHz). Fig. DC SOAR. Fig.3 Power derating curve. THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb(rf) from junction to mounting base P tot = 35.5 W;.9 K/W T mb = 5 C May 99 3

4 CHARACTERISTICS T j = 5 C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage open emitter; V I C = ma V (BR)CEO collector-emitter breakdown voltage open base; V I C = ma V (BR)EBO emitter-base breakdown voltage open collector; 3 V I E = ma I CES collector-emitter leakage current V BE = ; ma V CE = V h FE DC current gain V CE = 5 V; 5 I C =. A f T transition frequency V CE = 7.5 V; 3.9 GHz I E =.6 A C c collector capacitance V CB = 7.5 V; I E = I e = ; f = MHz pf C re feedback capacitance V CE = 7.5 V; I C = ; f = MHz 7 pf C c-mb collector-mounting base capacitance f = MHz. pf handbook, 8 halfpage h FE MCD9 handbook, 5 halfpage C c (pf) MCD I C (A) 6 8 V CB (V) V CE = 5 V. I E = i e = ; f = MHz. Fig. DC current gain as a function of collector current, typical values. Fig.5 Collector capacitance as a function of collector-base voltage, typical values. May 99

5 handbook, halfpage 5 f T (GHz) MCD96 3 I E (A) 6 V CB = 7.5 V. Fig.6 Transition frequency as a function of emitter current, typical values. May 99 5

6 APPLICATION INFORMATION RF performance at T mb = 5 C in a common emitter test circuit. MODE OF OPERATION f (MHz) c.w. class-b > 6 typ. 6.8 V CE (V) P L (W) G p (db) > 6 typ. 65 η c (%) handbook, halfpage G p (db) 8 η G p MCD97 7 η (%) 6 handbook, halfpage P L (W) MCD P L (W) 3 PD (W) Class-B operation; V CE = 7.5 V; f = 7 MHz. Class-B operation; V CE = 7.5 V; f = 7 MHz. Fig.7 Gain and efficiency as functions of load power, typical values. Fig.8 Load power as a function of drive power, typical values. Ruggedness in class-b operation The is capable of withstanding a full load mismatch corresponding to VSWR = 5: through all phases at rated output power, up to a supply voltage of 9 V, and f = 7 MHz. May 99 6

7 handbook, full pagewidth input C L T.U.T. L C7 output Z S = 5 Ω C R L C3 C L3 C5 C8 Z L = 5 Ω R C6 MBH7 L5 +V CC Fig.9 Class-B test circuit at f = 7 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C, C, C7, C8 film dielectric trimmer to 9 pf 89 9 C3, C multilayer ceramic chip capacitor 5 pf C5 feed-through capacitor pf C6 polyester capacitor 33 nf L stripline (note ) Ω. mm 5 mm L 3 turns closely wound enamelled 3 nh int. dia. mm.5 mm copper wire L3 turns enamelled mm copper wire int. dia. mm; pitch.5 mm; leads 5 mm L stripline (note ) Ω 5.7 mm 5 mm L5 grade 3B Ferroxcube wideband HF choke R.5 W carbon resistor Ω, 5% R.5 W carbon resistor Ω, 5% Note. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (ε r =.7); thickness 6 inch. May 99 7

8 handbook, full pagewidth rivet (x) 7 L input 5 Ω C R C3 C7 output 5 Ω L L C C L3 C6 C8 C5 R L5 V CC MBH8 The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of hollow rivets. Dimensions in mm. Fig. Component layout for 7 MHz class-b test circuit. May 99 8

9 handbook, halfpage 3 Z i (Ω) r i MCD99 handbook, halfpage Z L (Ω) R L MCD x i X L 8 f (MHz) f (MHz) Class-B operation; V CE = 7.5 V; P L = 8 W. Class-B operation; V CE = 7.5 V; P L = 8 W. Fig. Input impedance (series components) as a function of frequency, typical values. Fig. Load impedance (series components) as a function of frequency, typical values. handbook, halfpage G p (db) 8 MCD 6 handbook, halfpage Z i Z L MBA5 8 5 f (MHz) Class-B operation; V CE = 7.5 V; P L = 8 W. Fig.3 Definition of transistor impedance. Fig. Power gain as a function of frequency, typical values. May 99 9

10 PACKAGE OUTLINE Studless ceramic package; leads SOTD D A Q D c H b L α 3 H 5 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D H L Q α mm OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOTD May 99

11 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 3). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 99