DISCRETE SEMICONDUCTORS DATA SHEET. BLW98 UHF linear power transistor

Transcription

1 DISCRETE SEMICONDUCTORS DATA SHEET August 1986

2 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. FEATURES: diffused emitter ballasting resistors for an optimum temperature profile; gold sandwich metallization ensures excellent reliability. The transistor has a 1 " capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance in linear amplifier MODE OF OPERATION f vision MHz V CE V Note 1. Three-tone test method (vision carrier 8 db, sound carrier 7 db, sideband signal 16 db), zero db corresponds to peak sync level. I C ma T h C d im (1) db P o sync (1) W class-a > 3,5 > 6,5 class-a typ., typ. 7, G p db PIN CONFIGURATION PINNING - SOT1A. PIN DESCRIPTION 1 collector emitter base emitter Top view MBK187 Fig.1 Simplified outline. SOT1A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986

3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 13) Collector-emitter voltage (peak value); V BE = V CESM max. 5 V open base V CEO max. 7 V Emitter-base voltage (open collector) V EBO max. 3,5 V Collector current d.c. I C max. A (peak value); f > 1 MHz I CM max. A Total power dissipation at T h =7 C P tot max. 1,5 W Storage temperature T stg 65 to +15 C Operating junction temperature T j max. C 1 MGP717 MGP718 I C (A) P tot (W) 1 (1) T h = 7 C T mb = 5 C V CE (V) T 1 h ( C) (1) Second breakdown limit (independent of temperature). Fig. D.C. SOAR. Fig.3 Power derating curve vs. temperature. THERMAL RESISTANCE (dissipation = 1,5 W; T mb = 8,75 C, T h =7 C) From junction to mounting base R th j-mb = 5,5 K/W From mounting base to heatsink R th mb-h =,6 K/W August

4 6.5 handbook, full pagewidth R th j-h (K/W) T h = 1 C 1 C 8 C 6 C C C 15 C 175 C T j = C C MGP C 1 C.5 75 C P tot (W) 5 Fig. Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (R th mb-h =,6 K/W.) Example Nominal class-a operation (without r.f. signal): V CE = 5 V; I C = 85 ma; T h =7 C. Fig. shows: R th j-h max. 6,5 K/W T j max. C Typical device: R th j-h typ. 5,35 K/W T j typ. 183 C August 1986

5 CHARACTERISTICS T j =5 C unless otherwise specified Collector-emitter breakdown voltage V BE = ; I C = 1 ma V (BR)CES > 5 V open base, I C = 5 ma V (BR)CEO > 7 V Emitter-base breakdown voltage open collector, I E = 5 ma V (BR)EBO > 3,5 V D.C. current gain (1) > I C = 85 ma; V CE = 5 V h FE typ. 15 Collector-emitter saturation voltage (1) I C = 5 ma; I B = 1 ma V CEsat typ.,5 V Transition frequency at f = 5 MHz () I E = 85 ma; V CB = 5 V f T typ.,5 GHz Collector capacitance at f = 1 MHz I E =I e = ; V CB = 5 V C c typ. pf < 3 pf Feedback capacitance at f = 1 MHz I C = 5 ma; V CE = 5 V C re typ. 15 pf Collector-stud capacitance C cs typ. 1, pf Notes 1. Measured under pulse conditions: t p 3 µs; δ,.. Measured under pulse conditions: t p 5 µs; δ,1. 1 MGP7 I C (A) T h = 7 C 5 C V BE (V) Fig.5 Typical values; V CE = 5 V. August

6 6 MGP71 1 MGP7 h FE C c (pf) V CE = 5 V 5 V typ 1 I C (A) 1 3 V CB (V) Fig.6 Typical values; T j =5 C. Fig.7 I E =I e = ; f = 1 MHz; T j =5 C. handbook, full pagewidth MGP73 f T (GHz) 3 typ 1 1 I E (A) 3 Fig.8 V CB = 5 V; f = 5 MHz; T j =5 C. August

7 APPLICATION INFORMATION R.F. performance in u.h.f. class-a operation (linear power amplifier) f vision (MHz) V CE (V) I C (ma) T h ( C) d im (db) (1) P o sync (W) (1) G P (db) > 3,5 > 6, typ. 3,8 typ. 7, typ., typ. 7, Note 1. Three-tone test method (vision carrier 8 db, sound carrier 7 db, sideband signal 16 db), zero db corresponds to peak sync level. handbook, full pagewidth VSWR input < 1.1 C1 L1 T.U.T. L C8 VSWR output < 5 Ω 5 Ω C C1 L L3 C9 C5 C6 C3 R3 C1 C11 R R BD136 C BY6 C7 R1 R5 R6 R7 +V S MGP7 Fig.9 Class-A test circuit at f vision = 86 MHz. August

8 List of components: C1 = C = 1, to 5,5 pf film dielectric trimmer (cat. no ) C3 = C = 1 nf polyester capacitor C5 = C6 = 1 nf feed-through capacitor C7 = 5,6 pf ceramic capacitor C8 = to 18 pf film dielectric trimmer (cat. no ) C9 = to 9 pf film dielectric trimmer (cat. no. 89 9) C1 = 1 µf/ V solid aluminium electrolytic capacitor C11 = 7 nf polyester capacitor C1 = 3,3 pf chip capacitors (in parallel) R1 = 15 Ω carbon resistor (,5 W) R5 = 1 Ω carbon resistors in parallel (1 W each) R = 1,8 kω carbon resistor (,5 W) R6 = 1 kω carbon resistor (,5 W) R3 = 33 Ω carbon resistor (,5 W) R7 = Ω carbon potentiometer (,5 W) R = Ω carbon resistor (1 W) L1 = stripline (13,6 mm 6,9 mm) L = microchoke,7 µh (cat. no ) L3 = 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 5 mm L = stripline (,8 mm 6,9 mm) L1 and L are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (ε r =,7); thickness 1,5 mm. August

9 96 mm handbook, full pagewidth rivet 7 mm C5 V BB C3 L3 C6 +V CC C11 L C8 L1 L C1 C C1 C9 band V MGP75 Note Hole in printed-circuit board: Ø 9,7 mm. Fig.1 Component layout and printed circuit board for 86 MHz class-a test circuit. The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. August

10 5 handbook, full pagewidth MGP76 15 d im (db) d cm (%) 55 d im 1 6 d cm P o sync (W) 1 Fig.11 Intermodulation distortion (d im ) (1.) and cross-modulation distortion (d cm ) (.) as a function of P o sync. Typical values; V CE = 5 V; I C = 85 ma; T h =5 C; T h =7 C; f vision = 86 MHz. 1. Three-tone test method (vision carrier 8 db, sound carrier 7 db, sideband signal 16 db), zero db corresponds to peak sync level. Intermodulation distortion of input signal 75 db.. Two-tone test method (vision carrier db, sound carrier 7 db), zero db corresponds to peak sync level. Cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from db to db. August

11 5 r i, x i (Ω) MGP77 1 R L, X L (Ω) MGP78 3 x i 8 R L X L r i f (MHz) 9 65 f (MHz) 9 Typical values; V CE = 5 V; I C = 85 ma; class-a operation; T h =7 C. Typical values; V CE = 5 V; I C = 85 ma; class-a operation; T h =7 C. Fig.1 Input impedance (series components). Fig.13 Load impedance (series components). 1 MGP79 G p (db) 8 65 f (MHz) 9 Typical values; V CE = 5 V; I C = 85 ma; class-a operation; T h =7 C. Fig.1 August

12 PACKAGE OUTLINE Studded ceramic package; leads SOT1A D ceramic BeO A Q metal c N 1 D 1 A N D w 1 M A M W N 3 X M 1 H detail X b L α 3 H mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) N UNIT A b c D D 1 D H L M 1 M N 1 N 3 Q W max mm UNC w α 9 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT1A August

13 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 13). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August