DATA SHEET. BSR52 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.
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1 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr Nov 11
2 FEATURES PINNING High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS PIN 1 base 2 collector 3 emitter DESCRIPTION Industrial high gain amplification. DESCRIPTION in a TO-92; SOT54 plastic package. PNP complement: BSR62. handbook, halfpage MAM307 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 90 V V CES collector-emitter voltage V BE =0 V 80 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) 1 A I CM peak collector current 2 A I B base current (DC) 100 ma P tot total power dissipation T amb 25 C; note mw T stg storage temperature C T j junction temperature 150 C T amb ambient temperature C Note 1. Transistor mounted on an FR4 printed-circuit board Nov 11 2
3 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) thermal resistance from junction to ambient note K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES collector-base cut-off current V BE = 0 V; V CE =80V 50 na I EBO emitter-base cut-off current V EB =4V; I C =0 A 50 na h FE DC current gain V CE = 10 V; see Fig.2 I C = 150 ma 1000 I C = 500 ma 2000 V CEsat collector-emitter saturation voltage I C = 0.5 A; I B = 0.5 ma 1.3 V I C = 1 A; I B =4mA 1.6 V V BEsat base-emitter saturation voltage I C = 0.5 A; I B = 0.5 ma 1.9 V I C = 1 A; I B =4mA 2.2 V f T transition frequency V CE =5V; I C = 500 ma; f = 100 MHz 200 MHz Switching times (between 10% and 90% levels); see Fig.3 t on turn-on time I Con = 500 ma; I Bon = 0.5 ma; 500 ns t off turn-off time I Boff = 0.5 ma 1300 ns 2004 Nov 11 3
4 5000 handbook, full pagewidth MGD838 h FE I C (ma) V CE =10V. Fig.2 DC current gain; typical values. handbook, full pagewidth V BB V CC oscilloscope (probe) 450 Ω R B R C V o (probe) 450 Ω oscilloscope V i R2 DUT R1 MLB826 V i = 10 V; T = 200 µs; t p =6µs; t r =t f 3 ns. R1 = 56 Ω; R2 = 10 kω; R B =10kΩ; R C =18Ω. V BB = 1.8 V; V CC = 10.7 V. Oscilloscope: input impedance Z i =50Ω. Fig.3 Test circuit for switching times Nov 11 4
5 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e 1 e 3 b 1 L mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b 1 c D d E e e 1 L L 1 (1) max. mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA SOT54 TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE Nov 11 5
6 DATA SHEET STATUS LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified Nov 11 6
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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Rev. 3 26 July 2 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Rev. 5 April 27 Product data sheet. Product profile. General description NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low-voltage variable capacitance diode 2001 Dec 11 FEATURES Ultra small plastic SMD package Very low capacitance spread High capacitance ratio C1 to C4 ratio:
DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06.
DISCRETE SEMICONDUCTORS DT SHEET ok, halfpage M3D088 Supersedes data of 1997 Mar 06 1999 pr 19 FETURES Low current (100 m) Low voltage (45 V) Low noise. PPLICTIONS General purpose switching and amplification.
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
Single general-purpose switching transistor AEC-Q101 qualified. Switching and linear amplification. Symbol Parameter Conditions Min Typ Max Unit V CEO
6 March 2015 Product data sheet 1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: A 2. Features
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. BB200 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Low-voltage variable capacitance double diode 2001 Oct 12 FEATURES Very steep C/V curve C1: 70 pf; C4.5: 13.4 pf C1 to C5 ratio: min. 5 Low series
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.
Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD)
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data
Rev. 0 6 November 2006 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter
IMPORTANT NOTICE. use
Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PMBT Product profile. 2. Pinning information. PNP switching transistor. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 06 2 March 2010 Product data sheet 1. Product profile 1.1 General description in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PHPT61003PY. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY 2. Features
Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
28 August 23 Product data sheet. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFND-3 (SOT25) Surface-Mounted Device (SMD) plastic package
PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode
Rev. 06 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass
NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.
Rev. 2 4 October 200 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD)
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. PMEG3002AEB Low V F MEGA Schottky barrier diode. Product specification 2002 May 06
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low V F MEGA Schottky barrier diode 2002 May 06 FEATURES PINNING Forward current: 0.2 A Reverse voltage: 30 V Very low forward voltage Ultra small SMD package.
DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product specification Supersedes data of 2003 Apr 01.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 2003 Apr 01 2004 Mar 22 FEATURES Total power dissipation: max. 300 mw Two tolerance series: ±2% and approx. ±5% Working voltage range: nominal 2.4