PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Transcription

1 Rev April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP NPN/NPN NXP Name complement complement SOT96-1 SO8 PBSS4350SPN PBSS4350SS 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain (h FE ) at high I C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Dual low power switches (e.g. motors, fans) Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V CEO collector-emitter voltage open base V I C collector current A I CM peak collector current single pulse; t p 1ms A R CEsat collector-emitter saturation resistance Pulse test: t p 300 µs; δ I C = 2 A; I B = 200 ma mω

2 2. Pinning information 3. Ordering information Table 3. Pinning Pin Description Simplified outline Symbol 1 emitter TR1 2 base TR emitter TR2 4 base TR2 TR1 TR2 5 collector TR collector TR2 006aaa976 7 collector TR1 8 collector TR1 4. Marking Table 4. Type number Ordering information Package Name Description Version SO8 plastic small outline package; 8 leads; body width SOT mm Table 5. Marking codes Type number Marking code 5350SS 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base - 50 V V EBO emitter-base voltage open collector - 5 V I C collector current A I CM peak collector current single pulse; - 5 A t p 1ms I B base current A P tot total power dissipation T amb 25 C W [2] W [3] W _1 Product data sheet Rev April of 14

3 Table 6. Limiting values continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device P tot total power dissipation T amb 25 C W [2] W [3] - 2 W T j junction temperature C T amb ambient temperature C T stg storage temperature C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint aaa967 P tot (W) T amb ( C) Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector 1 cm 2 FR4 PCB, standard footprint Fig 1. Per device: Power derating curves _1 Product data sheet Rev April of 14

4 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from in free air K/W junction to ambient [2] K/W [3] K/W R th(j-sp) thermal resistance from junction to solder point Per device R th(j-a) thermal resistance from junction to ambient K/W in free air K/W [2] K/W [3] K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. 3 Z th(j-a) (K/W) 2 duty cycle = aaa t p (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _1 Product data sheet Rev April of 14

5 3 Z th(j-a) (K/W) 2 1 duty cycle = aaa t p (s) Fig 3. FR4 PCB, mounting pad for collector 1 cm 2 Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 006aaa811 Z th(j-a) (K/W) 2 duty cycle = t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _1 Product data sheet Rev April of 14

6 7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor I CBO collector-base cut-off current Pulse test: t p 300 µs; δ V CB = 50 V; I E =0A na V CB = 50 V; I E =0A; µa T j = 150 C I CES collector-emitter V CE = 50 V; V BE =0V na cut-off current I EBO emitter-base cut-off V EB = 5 V; I C =0A na current h FE DC current gain V CE = 2 V; I C = 0 ma V CE = 2 V; I C = 500 ma V CE = 2 V; I C = 1 A V CE = 2 V; I C = 2 A V CE = 2 V; I C = 2.7 A V CEsat collector-emitter saturation voltage I C = 0.5 A; I B = 50 ma mv I C = 1 A; I B = 50 ma mv I C = 2 A; I B = 0 ma mv I C = 2 A; I B = 200 ma mv I C = 2.7 A; I B = 270 ma mv R CEsat collector-emitter I C = 2 A; I B = 200 ma mω saturation resistance V BEsat base-emitter saturation voltage I C = 2 A; I B = 0 ma V I C = 2.7 A; I B = 270 ma V V BEon base-emitter turn-on V CE = 2 V; I C = 1 A V voltage t d delay time V CC = V; I C = 2 A; ns t I Bon = 0 ma; r rise time ns I Boff = 0 ma t on turn-on time ns t s storage time ns t f fall time ns t off turn-off time ns C c collector capacitance V CB = V; I E =i e =0A; f=1mhz pf _1 Product data sheet Rev April of 14

7 h FE aaa977 5 I C (A) 4 3 I B (ma) = aaa I C (ma) V CE (V) Fig 5. V CE = 2 V T amb = 0 C T amb =25 C T amb = 55 C DC current gain as a function of collector current; typical values Fig 6. T amb =25 C Collector current as a function of collector-emitter voltage; typical values aaa aaa980 V BE (V) V BEsat (V) Fig I C (ma) V CE = 2 V T amb = 55 C T amb =25 C T amb = 0 C Base-emitter voltage as a function of collector current; typical values Fig I C (ma) I C /I B =20 T amb = 55 C T amb =25 C T amb = 0 C Base-emitter saturation voltage as a function of collector current; typical values _1 Product data sheet Rev April of 14

8 1 006aaa aaa982 V CEsat (V) V CEsat (V) I C (ma) I C /I B =20 T amb = 0 C T amb =25 C T amb = 55 C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values I C (ma) T amb =25 C I C /I B = 0 I C /I B =50 I C /I B = Fig. Collector-emitter saturation voltage as a function of collector current; typical values 3 006aaa aaa984 R CEsat (Ω) R CEsat (Ω) I C (ma) I C /I B =20 T amb = 0 C T amb =25 C T amb = 55 C Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values I C (ma) T amb =25 C I C /I B = 0 I C /I B =50 I C /I B = Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values _1 Product data sheet Rev April of 14

9 8. Test information I B 90 % input pulse (idealized waveform) I Bon (0 %) % I Boff I C output pulse (idealized waveform) 90 % I C (0 %) % t t d t r t s toff t f ton 006aaa266 Fig 13. BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 450 Ω V o (probe) 450 Ω oscilloscope V I R2 DUT R1 mgd624 V CC = V; I C = 2 A; I Bon = 0 ma; I Boff = 0 ma Fig 14. Test circuit for switching times _1 Product data sheet Rev April of 14

10 9. Package outline pin 1 index Dimensions in mm Fig 15. Package outline SOT96-1 (SO8). Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description Packing quantity SOT mm pitch, 12 mm tape and reel For further information and the availability of packing methods, see Section 14. _1 Product data sheet Rev April 2007 of 14

11 11. Soldering (8 ) (6 ) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2 ) 0.60 (6 ) 0.3 (2 ) enlarged solder land (6 ) 5.50 board direction solder lands solder resist occupied area placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17. Wave soldering footprint SOT96-1 (SO8) _1 Product data sheet Rev April of 14

12 12. Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes _ Product data sheet - - _1 Product data sheet Rev April of 14

13 13. Legal information 13.1 Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com _1 Product data sheet Rev April of 14

14 15. Contents 1 Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 3 April 2007 Document identifier: _1