NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

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1 Rev. 2 4 October 200 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96- (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table. Product overview Type number Package NPN/NPN PNP/PNP Nexperia Name complement complement SOT96- SO8 PBSS4032SN PBSS4032SP.2 Features and benefits Low collector-emitter saturation voltage V CEsat Optimized switching time High collector current capability I C and I CM High collector current gain (h FE ) at high I C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR; NPN low V CEsat transistor V CEO collector-emitter voltage open base V I C collector current A I CM peak collector current single pulse; t p ms A R CEsat collector-emitter saturation resistance I C =4A; I B =0.4A mω

2 2. Pinning information Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2; PNP low V CEsat transistor V CEO collector-emitter voltage open base V I C collector current A I CM peak collector current single pulse; t p ms A R CEsat collector-emitter I C = 4 A; I B = 0.4 A mω saturation resistance Pulse test: t p 300 μs; δ Ordering information Table 3. Pinning Pin Description Simplified outline Graphic symbol emitter TR 2 base TR emitter TR2 4 base TR2 TR TR2 5 collector TR collector TR2 006aaa985 7 collector TR 8 collector TR 4. Marking Table 4. Ordering information Type number Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96- Table 5. Marking codes Type number Marking code 4032SPN Product data sheet Rev. 2 4 October of 20

3 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit TR (NPN) I C collector current A TR2 (PNP) I C collector current A Per transistor; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter - 30 V V CEO collector-emitter voltage open base - 30 V V EBO emitter-base voltage open collector - 5 V I CM peak collector current single pulse; t p ms - 0 A I B base current - A P tot total power dissipation T amb 25 C W [2] - W [3] -.7 W Per device P tot total power dissipation T amb 25 C W [2] -.4 W [3] W T j junction temperature - 50 C T amb ambient temperature C T stg storage temperature C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. Product data sheet Rev. 2 4 October of 20

4 aac302 P tot (W) T amb ( C) Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector cm 2 FR4 PCB, standard footprint Fig. Per device: Power derating curves 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from junction to ambient in free air K/W [2] K/W [3] K/W R th(j-sp) thermal resistance from junction to solder point Per device R th(j-a) thermal resistance from junction to ambient K/W in free air K/W [2] K/W [3] K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. Product data sheet Rev. 2 4 October of 20

5 aac303 Z th(j-a) (K/W) duty cycle = t p (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; 0 3 Z th(j-a) (K/W) aac304 duty cycle = t p (s) FR4 PCB, mounting pad for collector cm 2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; Product data sheet Rev. 2 4 October of 20

6 0 2 Z th(j-a) (K/W) 0 duty cycle = aac t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; Product data sheet Rev. 2 4 October of 20

7 7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR; NPN low V CEsat transistor I CBO collector-base V CB =30V; I E = 0 A na cut-off current V CB =30V; I E =0A; μa T j =50 C I CES collector-emitter V CE =24V; V BE = 0 V na cut-off current I EBO emitter-base cut-off current V EB =5V; I C = 0 A na h FE DC current gain V CE =2V V CEsat R CEsat V BEsat V BEon collector-emitter saturation voltage collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage I C = 500 ma I C = A I C = 2 A I C = 4 A I C = 6 A I C =A; I B = 50 ma mv I C =A; I B = 0 ma mv I C =2A; I B = 40 ma mv I C =4A; I B = 400 ma mv I C =4A; I B = 40 ma mv I C =6A; I B = 300 ma mv I C =4A; I B =400mA mω I C =A; I B =00mA V I C =4A; I B =400mA V V CE =2V; I C =2A V t d delay time V CC =2.5V; I C =A; ns t r rise time I Bon =0.05A; I Boff = 0.05 A ns t on turn-on time ns t s storage time ns t f fall time ns t off turn-off time ns f T transition frequency V CE =0V; I C =00mA; f=00mhz MHz C c collector capacitance V CB =0V; I E =i e =0A; f=mhz pf Product data sheet Rev. 2 4 October of 20

8 Table 8. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR2; PNP low V CEsat transistor I CBO collector-base V CB = 30 V; I E =0A na cut-off current V CB = 30 V; I E =0A; μa T j =50 C I CES collector-emitter V CE = 24 V; V BE =0V na cut-off current I EBO emitter-base cut-off current V EB = 5 V; I C =0A na h FE DC current gain V CE = 2 V V CEsat R CEsat V BEsat V BEon collector-emitter saturation voltage collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage Pulse test: t p 300 μs; δ I C = 500 ma I C = A I C = 2 A I C = 4 A I C = 5 A I C = A; I B = 50 ma mv I C = A; I B = 0 ma mv I C = 2 A; I B = 40 ma mv I C = 4 A; I B = 400 ma mv I C = 4 A; I B = 200 ma mv I C = 5 A; I B = 250 ma mv I C = 4 A; I B = 400 ma mω I C = A; I B = 00 ma V I C = 4 A; I B = 400 ma V V CE = 2 V; I C = 2 A V t d delay time V CC = 2.5 V; I C = A; ns t r rise time I Bon = 0.05 A; I Boff =0.05A ns t on turn-on time ns t s storage time ns t f fall time ns t off turn-off time ns f T transition frequency V CE = 0 V; I C = 00 ma; f=00mhz MHz C c collector capacitance V CB = 0 V; I E =i e =0A; f=mhz pf Product data sheet Rev. 2 4 October of 20

9 aac aac307 h FE I C (A) 8.0 I B (ma) = V CE (V) Fig 5. V CE =2V T amb = 00 C T amb =25 C T amb = 55 C TR (NPN): DC current gain as a function of collector current; Fig 6. T amb =25 C TR (NPN): Collector current as a function of collector-emitter voltage;.2 006aac aac309 V BE (V) V BEsat (V) Fig 7. V CE =2V T amb = 55 C T amb =25 C T amb = 00 C TR (NPN): Base-emitter voltage as a function of collector current; Fig 8. I C /I B =20 T amb = 55 C T amb =25 C T amb = 00 C TR (NPN): Base-emitter saturation voltage as a function of collector current; Product data sheet Rev. 2 4 October of 20

10 006aac30 006aac3 V CEsat (V) V CEsat (V) Fig 9. I C /I B =20 T amb = 00 C T amb =25 C T amb = 55 C TR (NPN): Collector-emitter saturation voltage as a function of collector current; Fig 0. T amb =25 C I C /I B = 00 I C /I B =50 I C /I B =0 TR (NPN): Collector-emitter saturation voltage as a function of collector current; aac aac33 R CEsat (Ω) R CEsat (Ω) Fig. I C /I B =20 T amb = 00 C T amb =25 C T amb = 55 C TR (NPN): Collector-emitter saturation resistance as a function of collector current; Fig 2. T amb =25 C I C /I B = 00 I C /I B =50 I C /I B =0 TR (NPN): Collector-emitter saturation resistance as a function of collector current; Product data sheet Rev. 2 4 October of 20

11 aac aac35 h FE 600 I C (A) 8.0 I B (ma) = V CE (V) Fig 3. V CE = 2 V T amb = 00 C T amb =25 C T amb = 55 C TR2 (PNP): DC current gain as a function of collector current; Fig 4. T amb =25 C TR2 (PNP): Collector current as a function of collector-emitter voltage;.4 006aac aac37 V BE (V) V BEsat (V) Fig 5. V CE = 2 V T amb = 55 C T amb =25 C T amb = 00 C TR2 (PNP): Base-emitter voltage as a function of collector current; Fig 6. I C /I B =20 T amb = 55 C T amb =25 C T amb = 00 C TR2 (PNP): Base-emitter saturation voltage as a function of collector current; Product data sheet Rev. 2 4 October 200 of 20

12 006aac38 006aac39 V CEsat (V) V CEsat (V) Fig 7. I C /I B =20 T amb = 00 C T amb =25 C T amb = 55 C TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; Fig 8. T amb =25 C I C /I B = 00 I C /I B =50 I C /I B =0 TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; aac aac32 R CEsat (Ω) R CEsat (Ω) Fig 9. I C /I B =20 T amb = 00 C T amb =25 C T amb = 55 C TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; Fig 20. T amb =25 C I C /I B = 00 I C /I B =50 I C /I B =0 TR2 (PNP): Collector-emitter saturation resistance as a function of collector current; Product data sheet Rev. 2 4 October of 20

13 8. Test information I B 90 % input pulse (idealized waveform) I Bon (00 %) 0 % I Boff I C output pulse (idealized waveform) 90 % I C (00 %) 0 % t t d t r t s t f ton toff 006aaa003 Fig 2. TR (NPN): BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 450 Ω V o (probe) 450 Ω oscilloscope V I R2 DUT R mlb826 V CC = 2.5 V; I C =A; I Bon = 0.05 A; I Boff = 0.05 A Fig 22. TR (NPN): Test circuit for switching times Product data sheet Rev. 2 4 October of 20

14 I B 90 % input pulse (idealized waveform) I Bon (00 %) 0 % I Boff I C output pulse (idealized waveform) 90 % I C (00 %) 0 % t t d t r t s toff t f ton 006aaa266 Fig 23. TR2 (PNP): BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 450 Ω V o (probe) 450 Ω oscilloscope V I R2 DUT R mgd624 V CC = 2.5 V; I C = A; I Bon = 0.05 A; I Boff =0.05A Fig 24. TR2 (PNP): Test circuit for switching times Product data sheet Rev. 2 4 October of 20

15 9. Package outline pin index Dimensions in mm Fig 25. Package outline SOT96- (SO8) 0. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. Type number Package Description Packing quantity SOT96-8 mm pitch, 2 mm tape and reel -5-8 For further information and the availability of packing methods, see Section 4. Product data sheet Rev. 2 4 October of 20

16 . Soldering (8 ) (6 ) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-_fr Fig 26. Reflow soldering footprint SOT96- (SO8) 0.60 (6 ).20 (2 ) 0.3 (2 ) enlarged solder land (6 ) 5.50 board direction solder lands solder resist occupied area placement accurracy ± 0.25 Dimensions in mm sot096-_fw Fig 27. Wave soldering footprint SOT96- (SO8) Product data sheet Rev. 2 4 October of 20

17 2. Revision history Table 0. Revision history Document ID Release date Data sheet status Change notice Supersedes v Product data sheet - v. Modifications: Figure Per device: Power derating curves : updated. v Product data sheet - - Product data sheet Rev. 2 4 October of 20

18 3. Legal information 3. Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 3.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6034) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Product data sheet Rev. 2 4 October of 20

19 Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 3.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 4. Contact information For more information, please visit: For sales office addresses, please send an to: Product data sheet Rev. 2 4 October of 20

20 5. Contents Product profile General description Features and benefits Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com Date of release: 4 October 200