AH102. Product Description. Functional Diagram. Product Features. Typical Parameters. Specifications. Absolute Maximum Ratings. Ordering Information
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1 Medium Power, High Linearity Amplifier The Communications Edge Product Features - MHz Bandwidth +45 dbm Output IP3 13 db Gain +27 dbm P1dB MTBF > 7 Hours Internally Matched Multiple Bias Voltages (+7. to +9. V) Product Description The AH2 is a medium power gain block that offers excellent dynamic range in a low cost surface mount package. The combination of a signal supply voltage and an internally matched device makes it ideal for both narrow band and broadband applications. Superior thermal design allows the product to achieve +45 dbm IP3 performance at a mounting temperature of +85 C with an associated MTBF of > 7 hours. Functional Diagram Function Pin No. Input 1 Ground 2 Output Bias 3 Ground 4 Specifications Parameter Units Min. Typical Max. Frequency Range MHz - S21 - Gain db S11 - Input Return Loss db - S22 - Output Return Loss db - Noise Figure db 4.5 Output P1dB dbm +27 Output IP3 dbm Operating Current Range ma 17 2 Supply Voltage V 9. Typical Parameters Parameter Units Typical Frequency MHz 9 19 S21 db S11 db S22 db Output IP3 dbm Noise Figure db Typical parameters reflect AH2 application circuit. Test conditions unless otherwise noted. 1. T = C, Vdd = 9. V, Freq = 8 MHz, 5 ohm system. 2. 3OIP Measured with two tones at an output power of 8 dbm/tone separated by MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 slope rule. Absolute Maximum Ratings Parameter Rating Operating Case Temperature -4 to +85 C Storage Temperature -55 to +1 C DC Voltage +11 V RF Input Power (continuous) +17 dbm Ordering Information Part No. AH2 AH2-PCB Cell AH2-PCS/u Description Medium Power High Linearity Amplifier (Available in tape and reel) Cellular Application Circuit PCS/UMTS Application Circuit This document contains information on a new product. Specifications and information are subject to change without notice.
2 Performance Charts (Vds =, Ids = ma, T = 22 C, unmatched device in a 5 ohm system) Gain vs Pout Gain vs Frequency Gain (db) RF = 9 MHz Gain (db) 14 12,, Pout (db) OIP3 vs Frequency 5 OIP3 vs Pout OIP3 (dbm) 45 4 OIP3 (dbm) 45 4 Pout = 8 dbm/tone RF = 9 MHz Pout (db) P1dB vs Frequency 5 OIP3 vs Temperature P1dB (db) OIP3 (dbm) 45 4 Pout = 8 db/tone RF = 9 MHz Temperature ( C) Thermal Data Parameter Operating Case Temperature Thermal Resistance (Maximum) Junction Temperature (Recommended Maximum) Rating -4 to +85 C C/W +155 C MTBF (Hrs) 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 MTBF vs Temperature Ground Tab Junction 1.E+3 1.E Temperature ( C) 175
3 Application Circuit: 9 MHz Typical Specifications Frequency 9 MHz S21 (db) 13.9 db S11 (db) db S22 (db) db IP dbm Noise Figure 3.1 db Bias 9. V S-Parameters (db) S-Parameters vs Frequency S21 - S22 - S Noise Figure (db) Noise Figure vs Frequency Schematic Diagram RF L = 22 nh 85 C = pf By-Pass DC Bias 16 C = 1. µf Match RF IN PIN 1 PIN 3 PIN 2, 4 RF OUT GETEK Board Layout AH2 = 3.3 pf = 6.8 nh
4 Application Circuit: 19 MHz Typical Specifications S-Parameters vs Frequency Frequency 19 MHz S21 (db) 13.5 db S11 (db) db S22 (db) -15. db IP3 46. dbm Noise Figure 3.8 db Bias 9. V S-Parameters (db) - S21 S22 - S Noise Figure (db) Noise Figure vs Frequency Schematic Diagram RF L = 22 nh 85 C = pf By-Pass DC Bias 16 C = 1. µf Match RF IN PIN 1 PIN 3 PIN 2, 4 RF OUT GETEK Board Layout AH2 = 1.5 pf = 1.5 nh
5 Outline Drawing Land Pattern Mounting Configuration
6 Typical Test Data S-Parameters (Ids = 2 ma, Vds = +, T = 22 C, Z = 5 ohms) Freq (MHz) S11 (db) S11 Ang S21 (db) S21 Ang S12 (db) S12 Ang S22 (db) S22 Ang Typical Test Data S-Parameters (Ids = 215 ma, Vds = + V, T = 22 C, Z = 5 ohms) Freq (MHz) S11 (db) S11 Ang S21 (db) S21 Ang S12 (db) S12 Ang S22 (db) S22 Ang
AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
AH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /
AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Product Description VG111-F
Gain Ctrl Product Features 1.7 2.7 GHz bandwidth 26.6 db Attenuation Range +39.5 dbm Output IP3 +22 dbm P1dB Constant IP3 & P1dB over attenuation range Single voltage supply Pb-free 6mm 2-pin QFN package
Preliminary Datasheet
Device Features This can be operated at Vd of 3.0V N.F = 0.78 db @ 1850MHz at Demo board 31.5 dbm Output IP3 at 0dBm/tone at 1850MHz 15.6 db Gain at 1850MHz 17.7 dbm P1dB at 1850 MHz Lead-free/Green/RoHS
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Typical Performance 1. Absolute Maximum Ratings
Device Features +5V/215mA at operating bias condition Gain = 16.0 db @ 2400MHz P1dB = 29.5 dbm @ 2400MHz OIP3 = 42.1dBm 16dBm/tone at 2400MHz LTE 20M ACLR = 19.1dBm Output Power at -50dBc @ 2400MHz Lead-free/Green/RoHS-compliant
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Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL Features Output IP3:
TQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
ECP100D 1Watt, High Linearity InGaP HBT Amplifier
Applications Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security 16 Pin 4mm QFN Package Product Features Functional Block Diagram 4 23 MHz 18 db Gain @ 9 MHz +31.5 dbm
Dual Matched MMIC Amplifier
Surface Mount Dual Matched MMIC Amplifier 50Ω DC to 5.2 GHz The Big Deal Gain, 14.1 db typ. at 2 GHz Dual matched amplifier for push-pull & balanced amplifiers High dynamic range CASE STYLE: JV2579 Product
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM153040WM-BM-R AM153040WM-FM-R Aug 2010 Rev 0 DESCRIPTION AMCOM s is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs HIFET PHEMT MMIC power amplifier.
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
Typical Performance 1. IS-95C ACPR dbm WCDMA ACLR dbm
Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
Features. Specifications
MGA-31389 0.1W High Gain Driver Amplifier 50MHz ~ 2GHz Data Sheet Description Avago Technologies MGA-31389 is a high performance Driver Amplifier MMIC, housed in a standard SOT-89 plastic package. The
3 OIP3 _ measured with two tones at an output of 9dBm per tone separated by 1 MHz.
Device Features OIP3 = 36.9dBm @ 950 MHz Gain = 17.1 db @ 950 MHz Output P1 = 19.5 dbm @950 MHz CTB = 80.0 dbc @ 300MHz CTO = 64.0 dbc @ 300MHz Patented temperature compensation Lead-free/RoHS-compliant
CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
GaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM83WM-BM-R AM83WM-FM-R December 214 REV DESCRIPTION AMCOM s AM83WM-BM/FM-R is an ultra broadband GaAs MMIC power amplifier. It has 23dB gain, and >28dBm output power over the.
30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide
Outstanding Noise Figure, measured in a 50 Ohm environment without any external matching
Low Noise, High IP3 Monolithic Amplifier 50Ω 0.05 to 4 GHz The Big Deal Ultra Low Noise Figure, 0.8 High IP3/Low Current, ma at +5V Wideband, up to 4 GHz CASE STYLE: CA1389 Product Overview Mini-Circuits
TQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz