BFP620. NPN Silicon Germanium RF Transistor

Transcription

1 NPN Silicon Germanium RF Transistor High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure F =.7 at.8 GHz Outstanding noise figure F =. at GHz Maximum stable gain G ms = 2. at.8 GHz G ma = at GHz Gold metallization for extra high reliability 2 VPS ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP2 R2s =B 2=E =C =E SOT Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage T A > C T A C V CEO V Collectoremitter voltage V CES 7. Collectorbase voltage V CBO 7. Emitterbase voltage V EBO.2 Collector current I C 8 ma Base current I B Total power dissipation ) P tot 8 mw T S 9 C Junction temperature T j C Ambient temperature T A... Storage temperature T stg... TS is measured on the collector lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W Aug2

2 Electrical Characteristics at T A = 2 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = Collectoremitter cutoff current I CES µa V CE = 7. V, V BE = Collectorbase cutoff current I CBO na V CB = V, I E = Emitterbase cutoff current I EBO µa V EB =. V, I C = DC current gain I C = ma, V CE =. V, pulse measured h FE 8 27 For calculation of RthJA please refer to Application Note Thermal Resistance 2 Aug2

3 Electrical Characteristics at T A = 2 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency I C = ma, V CE =. V, f = GHz f T GHz Collectorbase capacitance V CB = 2 V, f = MHz Collector emitter capacitance V CE = 2 V, f = MHz Emitterbase capacitance V EB =. V, f = MHz Noise figure I C = ma, V CE =. V, f =.8 GHz, Z S = Z Sopt I C = ma, V CE =. V, f = GHz, Z S = Z Sopt C cb.2.2 pf C ce.22 C eb. F.7. Power gain, maximum stable ) I C = ma, V CE =. V, Z S = Z Sopt, Z L = Z Lopt, f =.8 GHz Power gain, maximum available ) I C = ma, V CE =. V, Z S = Z Sopt, Z L = Z Lopt, f = GHz G ms 2. G ma Transducer gain S 2e 2 I C = ma, V CE =. V, Z S = Z L = Ω, f =.8 GHz 2 I C = ma, V CE =. V, Z S = Z L = Ω, f = GHz 9. Third order intercept point at output 2) V CE = 2 V, I C = ma, f =.8 GHz, Z S = Z L = Ω Compression point at output I C = ma, V CE = 2 V, Z S = Z L = Ω, f =.8 GHz IP 2. m P. Gma = S 2e / S 2e (k(k²) /2 ), G ms = S 2e / S 2e 2 IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is Ω from. MHz to GHz Aug2

4 SPICE Parameter (GummelPoon Model, BerkleySPICE 2G. Syntax): Transitor Chip Data: IS =.22 fa VAF = V NE = 2 VAR = 2 V NC = 2 RBM = 2.77 Ω CJE = 2.7 ff TF =. ps ITF = 2. A VJC =. V TR =.2 ns MJS =. XTI = AF = 2 TITF. BF = 2 IKF =.2 A BR = IKR = ma RB =.29 Ω RE =. VJE =.7 V XTF = PTF = deg MJC =. CJS = 28. ff NK =.2 FC =.8 KF = 7.29E TITF2.E NF =.2 ISE = 2 fa NR = ISC = 8 pa IRB =.22 ma RC = 2. Ω MJE =. VTF =. V CJC = 2.9 ff XCJC = VJS =.2 V EG =.78 ev TNOM 298 K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: B T = 2 C LBB LBC CBEI Itf = 2* (.e * (T2) +.e * (T2)^2 ) CBCC BFP2_Chip CBE C CBEO B E C S E CCEO For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CDROM or see Internet: http// CBS LEC RBS LEB RES CES LCC RCS CCS CCEI LCB C LBC = ph LCC = ph LEC = ph LBB = 7. ph LCB = 72. ph LEB = 29. ph CBEC = 98. ff CBCC =.9 ff CES = ff CBS = ff CCS = ff CCEO =. ff CBEO =.7 ff CCEI = 2. ff CBEI = 99. ff RBS = 2 Ω RCS = 2 Ω RES = Ω Valid up to GHz Aug2

5 Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 2 mw K/W Ptot 2 8 RthJS 2 D = C T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) 7 2 C t p Collectorbase capacitance C cb = ƒ(v CB ) f = MHz. pf Ptotmax/ PtotDC D =.,,2,,,2, CCB C 2 V 7 t p V CB Aug2

6 Third order Intercept Point IP =ƒ(i C ) (Output, Z S =Z L =Ω) V CE = parameter, f = 9MHz Transition frequency f T = ƒ(i C ) f = GHz V CE = Parameter in V m 27 2.V GHz 2.8V. to 2. IP 8 ft.v 2 9.8V ma I C Power gain G ma, G ms = ƒ(i C ) V CE =.V f = Parameter in GHz ma I C Power Gain G ma, G ms = ƒ(f), S 2 ² = f (f) V CE =.V, I C = ma G 22.8 G Gms 2 2 S2 ² Gma ma 9 I C 2 GHz f Aug2

7 Power gain G ma, G ms = ƒ (V CE ) I C = ma f = Parameter in GHz.9.8 G V 2. V CE 7 Aug2