TGA2622-CP 9 10 GHz 35 W GaN Power Amplifier

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1 9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 PIN = 18 dbm PAE: PIN = 18 dbm Power Gain: 27.5 PIN = 18 dbm Bias: VD = 28 V, IDQ = 29 ma, VG = -2.7 V Typical (Pulsed VD: PW = 1 us and DC = 1 %) Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram General Description TriQuint s is a packaged, high power X- band amplifier fabricated on TriQuint s TQGaN. um GaN on SiC production process. Operating from 9 1 GHz, the achieves W saturated output powers, a power-added efficiency of greater than %, and power gain of 27.5 db. The is packaged in a 1-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and conditions. Both RF ports are internally DC blocked and matched to 5 ohms allowing for simple system integration. Pad Configuration Pad No. 1, 5 VG Symbol 2, 4, 7, 9 GND 3 RF In 6, 1 VD 8 RF Out The is ideally suited for both commercial and defense applications. Lead-free and RoHS compliant. Evaluation boards are available upon request. Ordering Information Part ECCN Description 3A1.b.2.b 9 1 GHz W GaN Power Amplifier Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

2 9 1 GHz W GaN Power Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Value V Gate Voltage Range (VG) -8 to V Drain Current (ID) 4.3 A Gate Current (IG) -11 to ma (1) Power Dissipation (PDISS), 85 C, 17 W Input Power (PIN),, 5Ω, VD = 28V, 85 C 24 dbm Input Power (PIN),, VSWR 3:1, VD = 28V, 85 C 24 dbm Channel Temperature (TCH) 275 C Mounting Temperature ( seconds) 26 C Storage Temperature 5 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Notes: (1) Max rating for IG is at Channel Temperature (TCH) of 2 C Recommended Operating Conditions Parameter Drain Voltage (VD): Pulsed Drain Current (IDQ) Value 28 V 29 ma Drain Current Under RF Drive (ID_DRIVE) See Plots p. 6 Gate Voltage (VG) -2.7 V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See Plots p. 6 Temperature (TBASE) - to 85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: C, VD = 28 V, IDQ = 29 ma, VG = -2.7 V Typical, Pulsed VD: PW = 1 us, DC = 1 % Parameter Min Typical Max Units Operational Frequency Range 9 1 GHz Small Signal Gain db Input Return Loss >11 db Output Return Loss >8 db Output Power (Pin = 18dBm).5 dbm Power Added Efficiency (Pin = 18dBm) > % Power Gain (Pin = 18dBm) 27.5 db Output Power Temperature Coefficient (calculated from C to 85 C) Pulsed Recommended Operating Voltage: V dbm/ C Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

3 P DISS (W) P DISS (W) R JC (C/W) Median Lifetime, T M (Hours) 9 1 GHz W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) VD = 28 V, IDQ = 29 ma, 1.15 ºC/W (Pulsed VD : PW = 1 us, DC = 1 %), Channel Temperature (TCH) (Under RF drive) Tbase = 85 C, VD = 28 V, ID_Drive = 3.2 A, 1 C Median Lifetime (TM) PIN = 2 dbm, POUT =.6 dbm, PDISS = 52 W 3.7 x 1^1 Hrs Thermal Resistance (θjc) (1), VD = 28 V, IDQ = 29 ma, 1.78 ºC/W Channel Temperature (TCH) (Under RF drive) Tbase = 85 C, VD = 28 V, ID_Drive = 2.7 A, 166 C PIN = 2 dbm, POUT =.8 dbm, PDISS Median Lifetime (TM) = W 3.21 x 1^8 Hrs Notes: 1. Thermal Resistance measured to back of package. Test Conditions: VD = V; Failure Criteria = 1% reduction in ID_MAX Thermal Resistance vs. P DISS T BASE = +85 C Pulsed Pulsed: PW=1us, DC=1% P DISS (W) 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 1E+4 Median Lifetime vs. Channel Temperature FET Channel Temperature, T CH ( C) 6 5 P DISS vs. Frequency vs. T BASE 6 5 P DISS vs. Frequency vs. T BASE 2 1 V D = 28V; I DQ = 29mA 2 1 V D = 28V; I DQ = 29mA Pulsed: PW=1us, DC=1% Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

4 Typical Performance: Large Signal (Pulsed Operation) 9 1 GHz W GaN Power Amplifier Output Power vs. Frequency vs. V D Output Power vs. Frequency vs. Temp. V D = 28V, I DQ = 29mA Pulsed: PW=1us, DC=1% Vd=V Vd=V I DQ = 29mA Pulsed: PW=1us, DC=1% Output Power vs. Freq vs. Input Power V D = 28 V, I DQ = 29 ma Output Power vs. Input Power vs. Temp. Freq. = 9.5GHz 16dBm 17dBm 18dBm 19dBm 2dBm Pulsed: PW=1 us, DC=1% Pulsed: PW=1us, DC=1% V D = 28V, I DQ = 29mA Output Power vs. Frequency vs. I DQ 29mA 7mA V D = 28V Pulsed: PW=1us, DC=1% Output Power vs. Input Power vs. I DQ Freq. = 9.5 GHz 29 ma 7 ma V D = 28V Pulsed: PW=1us, DC=1% Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

5 PAE (%) Gain (db) PAE (%) Power Gain (db) PAE (%) Power Gain (db) Typical Performance: Large Signal (Pulsed Operation) 9 1 GHz W GaN Power Amplifier 55 5 PAE vs. Frequency vs. V D 29 Power Gain vs. Frequency vs. V D Vd=V Vd=V I DQ = 29mA Pulsed: PW=1us, DC=1% Vd=V 24 Vd=V I DQ = 29mA Pulsed: PW=1us, DC=1% PAE vs. Frequency vs. Temperature V D = 28V, I DQ = 29mA Pulsed: PW=1us, DC=1% 29 Power Gain vs. Frequency vs. Temp. V D = 28V, I DQ = 29mA Pulsed: PW=1us, DC=1% PAE vs. Input Power vs. Temp. Pulsed: PW=1us, DC=1% V D = 28V, I DQ = 29mA 37 Power Gain vs. Input Power vs. Temp. Pulsed: PW=1us, DC=1% V D = 28V, I DQ = 29mA 2 1 Freq. = 9.5 GHz Freq. = 9.5 GHz Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

6 Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Typical Performance: Large Signal (Pulsed Operation) 9 1 GHz W GaN Power Amplifier 2 15 Drain Current vs. Frequency vs. V D Vd=V 1 Vd=V I DQ = 29mA Pulsed: PW=1us, DC=1% Gate Current vs. Frequency vs. V D Vd=V Vd=V I DQ = 29mA Pulsed: PW=1us, DC=1% Drain Current vs. Frequency vs. Temp. V D = 28V, I DQ = 29mA Pulsed: PW=1us, DC=1% Gate Current vs. Frequency vs. Temp. V D = 28V, I DQ = 29mA 5 Pulsed: PW=1us, DC=1% Drain Current vs. Input Power vs. Temp. Pulsed: PW=1us, DC=1% V D = 28V, I DQ = 29mA Freq. = 9.5 GHz Gate Current vs. Input Power vs. Temp. Pulsed: PW=1us, DC=1% Freq. = 9.5 GHz V D = 28V, I DQ = 29mA Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

7 Typical Performance: Large Signal ( Operation) 9 1 GHz W GaN Power Amplifier Output Power vs. Frequency vs. V D Output Power vs. Frequency vs. Temp. Vd=V Vd=V I DQ = 29mA V D = 28V, I DQ = 29mA Output Power vs. Freq vs. Input Power Output Power vs. Input Power vs. Temp. Freq. = 9.5 GHz 16dBm 17dBm 18dBm 19dBm 2dBm V D = 28 V, I DQ = 29 ma V D = 28V, I DQ = 29mA Output Power vs. Frequency vs. I DQ V D = 28V 29mA 7mA Output Power vs. Input Power vs. I DQ 29 ma 7 ma V D = 28V Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

8 PAE (%) Power Gain (db) PAE (%) Power Gain (db) PAE (%) Power Gain (db) Typical Performance: Large Signal ( Operation) 9 1 GHz W GaN Power Amplifier 55 5 PAE vs. Frequency vs. V D 29 Power Gain vs. Frequency vs. V D Vd=V Vd=V I DQ = 29mA Vd=V 24 Vd=V I DQ = 29mA PAE vs. Frequency vs. Temperature 29 Power Gain vs. Frequency vs. Temp. V D = 28V, I DQ = 29mA V D = 28V, I DQ = 29mA PAE vs. Input Power vs. Temperature Freq. = 9.5 GHz Power Gain vs. Input Power vs. Temp. V D = 28V, I DQ = 29mA 2 1 V D = 28V, I DQ = 29mA Freq. = 9.5 GHz Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

9 Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Typical Performance: Large Signal ( Operation) 9 1 GHz W GaN Power Amplifier 2 15 Drain Current vs. Frequency vs. V D Vd=V 1 Vd=V I DQ = 29mA Gate Current vs. Frequency vs. V D Vd=V Vd=V 1 5 I DQ = 29mA 2 15 Drain Current vs. Frequency vs. Temp. 1 V D = 28V, I DQ = 29mA Gate Current vs. Frequency vs. Temp. 1 5 V D = 28V, I DQ = 29mA Drain Current vs. Input Power vs. Temp. Freq. = 9.5 GHz 5 4 Gate Current vs. Input Power vs. Temp. Freq. = 9.5 GHz V D = 28V, I DQ = 29mA V D = 28V, I DQ = 29mA Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

10 IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) 2f Output Power (dbc) 3f Output Power (dbc) 9 1 GHz W GaN Power Amplifier Typical Performance: Linearity nd Harmonic vs. Frequency vs. P IN 1dBm 18dBm V D = 28V, I DQ = 29mA - - 3rd Harmonic vs. Frequency vs. P IN V D = 28V, I DQ = 29mA dBm 18dBm IM3 vs. Output Power vs. Frequency V D = 28V, I DQ = 29mA, 1MHz Tone Spacing IM5 vs. Output Power vs. Frequency V D = 28V, I DQ = 29mA, 1MHz Tone Spacing - 9.GHz 9.5GHz 1.GHz Output Power per Tone (dbm) -6 9.GHz 9.5GHz 1.GHz Output Power per Tone (dbm) -1 IM3 vs. Output Power vs. I DQ Freq. = 9.5GHz, 1MHz Tone Spacing IM5 vs. Output Power vs. I DQ Freq. = 9.5GHz, 1MHz Tone Spacing V=28V, I - DQ =29mA V=28V, I DQ =7mA Output Power per Tone (dbm) -6 V=28V, I DQ =29mA -7 V=28V, I DQ =7mA Output Power per Tone (dbm) Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

11 S22 (db) S22 (db) S11 (db) S11 (db) S21 (db) S21 (db) 9 1 GHz W GaN Power Amplifier Typical Performance: Small Signal 39 Gain vs. Frequency vs. Temperature 39 Gain vs. Frequency vs. I DQ V D = 28 V, I DQ = 29mA mA 21 7mA 18 V D = 28V 15 Input Return Loss vs. Freq. vs. Temp. V D = 28 V, I DQ = 29mA Input Return Loss vs. Freq. vs. I DQ V D = 28 V ma 7 ma - Output Return Loss vs. Freq. vs. Temp. V D = 28 V, I DQ = 29mA Output Return Loss vs. Freq. vs. I DQ V D = 28 V ma 7 ma - - Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

12 9 1 GHz W GaN Power Amplifier Application Circuit C5 1-uF C1.1 uf R1 1 Ohms C7.1 uf R5 1 Ohms VG (Note 1) RFIN RFOUT VD (Note 2) C6 1-uF R2 1 Ohms C2.1 uf R6 1 Ohms C8.1 uf Notes: 1. VG must be biased from both sides (Pins 1 and 5) 2. VD must be biased from both sides (Pins 6 and 1) Bias-up Procedure 1. Set power supply: ID limit to 3.5 A, IG limit to ma 2. Apply. V to VG (for pinch-off) 3. Increase VD to +28 V; Ensure IDQ is approx. ma 4. Adjust VG more positive until IDQ = 29 ma VG ~ -2.7 V typ 5. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce VG to 5. V; Ensure IDQ ~ ma 3. Reduce VD to V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 3 RFIN Output; matched to 5 Ω; DC blocked 2,4,7,9 GND Must be grounded on the PCB. 6,1 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Input; matched to 5 Ω; DC blocked Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

13 9 1 GHz W GaN Power Amplifier Evaluation Board Layout Notes: Both Top and Bottom VD and VG must be biased. Bill of Material Reference Des. Value Description Manuf. Part Number C1, C2.1 μf Cap, 2, 5 V, 1%, X7R Various C5, C6 1- μf Cap, 126, 5 V, 2%, X5R (1 V is OK) Various C7, C8.1 μf Cap, 2, 5 V, 1%, X7R Various R1, R2, R5, R6 1 ohms Res, 2, 5 V, 5% Various R3, R4 ohms Res, 2, jumpers required for the above EVB Various Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

14 9 1 GHz W GaN Power Amplifier Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. Nylock screws are recommended for mounting the to the board. 3. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or 4 mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. Apply solder to each pin of the. 5. Clean the assembly with alcohol. Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1; x.xxx = ±.5 Materials: Base: Copper Lead: Alloy 194 Lid: LCP (Liquid Crystal Polymer) All metalized features are gold plated Part is epoxy sealed Marking: 2622: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

15 Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level 5A at +26 C convection reflow The part is rated Moisture Sensitivity Level 5A at 26 C per JEDEC standard IPC/JEDEC J-STD GHz W GaN Power Amplifier Solderability Compatible with the latest version of J-STD-2, Leadfree solder, 26 C RoHS Compliance This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br2) Free PFOS Free SVHC Free ECCN US Department of Commerce: 3A1.b.2.b Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: info-sales@triquint.com Fax: For technical questions and application information: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: Rev of 15 - Disclaimer: Subject to change without notice 214 TriQuint

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