TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

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1 TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output power with a power-added efficiency of %, and db small signal gain. The TGA94-HM is offered in a hermetically sealed 22- lead 7 x7 mm ceramic QFN designed for surface mount to a printed circuit board. The package has a Cu base, offering superior thermal management. The TGA94-HM is ideally suited to support both commercial and military applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 5 Ohms. Lead free and RoHS compliant. Evaluation Boards are available upon request. Product Features Frequency Range: GHz POUT: 36.5 dbm at PIN = 14 dbm PAE: % CW Small Signal Gain: db IM3: dbm POUT / Tone Bias: VD = + V, IDQ = 14 ma, VG = 3. V Typical Package Dimensions: 7 x 7 x 1.3 mm Functional Block Diagram Applications Military SATCOM Terminals Commercial SATCOM Terminals Point-to-Point Digital Radio Point-to Multipoint Digital Radio Ordering Information Part No. ECCN Description TGA94-HM 3A1.b.2.c GHz GaN Power Amplifier Rev. B - 1 of

2 TGA94-HM Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) V Gate Voltage Range (VG) 5 to V Drain Current (ID) 1.4 A Gate Current (IG) : 3 to 17 ma Power Dissipation (PDISS), 85 C W Input Power, CW, 5 Ω, (PIN) dbm Channel Temperature (TCH) 275 C Mounting Temperature ( Seconds) 26 C Storage Temperature 55 to C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (VD) Drain Current (IDQ) Drain Current Under RF Drive (ID_DRIVE) Gate Voltage (VG) Gate Current Under RF Drive (IG_DRIVE) Value / Range + V 14 ma See plots p. 7 3 V (Typ.) See plots p. 7 Temperature (TBASE) 4 to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range GHz Small Signal Gain db Input Return Loss > 5 db Output Return Loss > 5 db Output PIN = 14 dbm 36.5 dbm Power Added PIN = 14 dbm % IM3 ( POUT/ Tone = dbm/tone) dbc IM5 ( POUT/ Tone = dbm/tone) 43 dbc Small Signal Gain Temperature Coefficient.5 db/ C Output Power Temperature Coefficient.4 dbm/ C Test conditions unless otherwise noted: C, VD = + V, IDQ = 14 ma, VG = 3 V Typ, CW. Rev. B - 2 of

3 R jc (ºC/W) Power Dissipation (W) TGA94-HM Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE =, VD = + V (CW).3 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 29 GHz, PIN = 14 dbm: IDQ = 14 ma, ID_Drive = 64 ma 177 C Median Lifetime (TM) POUT = 36 dbm, PDISS = 9 W 2.4E+ Hrs Notes: 1. Thermal resistance measured to back of package. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria = % reduction in ID_MAX Thermal Resistance vs. P DISS P DISS vs. Frequency vs. Temp C T BASE = 85 ºC, CW Power Dissipation (W) Pin = 14 dbm, CW Rev. B - 3 of

4 S22 (db) S22 (db) S11 (db) S11 (db) S21 (db) S21 (db) Performance Plots Small Signal Conditions unless otherwise specified: VD = + V, IDQ = 14 ma, VG = 3 V Typical, CW. TGA94-HM 32 Gain vs. Frequency vs. Temperature 32 Gain vs. Frequency vs. Drain Current ma 17 C ma Input Return Loss vs. Frequency vs. Temp. C Input Return Loss vs. Freq. vs. Drain Current 28 ma 14 ma Output Return Loss vs. Frequency vs. Temp. C Output Return Loss vs. Freq. vs. I D 28 ma 14 ma Rev. B - 4 of

5 Output Power (dbm) Output Power (dbm) Output Power (dbm) Output Power (dbm) Output Power (dbm) Performance Plots Large Signal Conditions unless otherwise specified: VD = + V, IDQ = 14 ma, VG = 3 V Typical, CW. TGA94-HM 4 Output Power vs. Input Power vs. Temp. Freq = 29 GHz 4 Output Power vs. Frequency vs. Temp. C C Pin = 14 dbm 4 Output Power vs. Input Power vs. V D Freq = 29 GHz, Temp = C 4 Output Power vs. Frequency vs. I DQ 14 ma 2 ma 28 ma 22 V V Pin = 14 dbm, Temp = C 4 Output Power vs. Input Power vs. Freq. Temp = C 26 GHz 28 GHz GHz 32GHz Rev. B - 5 of

6 Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) Performance Plots Large Signal Conditions unless otherwise specified: VD = + V, IDQ = 14 ma, VG = 3 V Typical, CW. TGA94-HM PAE vs. Frequency vs. V D Pin = 14 dbm, Temp = C Power Gain vs. Input Power vs. V D Freq = 29 GHz, Temp = C 22 V V 22 V V PAE vs. Input Power vs. Frequency Temp = C Power Gain vs. Input Power vs. Frequency Temp = C 5 26 GHz 28 GHz GHz 32GHz 5 26 GHz 28 GHz GHz 32GHz Pin = 14 dbm PAE vs. Frequency vs. Temp. Power Gain vs. Input Power vs. Temp. Freq = 29 GHz C C Rev. B - 6 of

7 Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Drain Current (ma) Gate Current (ma) Performance Plots Large Signal Conditions unless otherwise specified: VD = + V, IDQ = 14 ma, VG = 3 V Typical, CW. TGA94-HM Drain Current vs. Frequency vs. V D Pin = 14 dbm, Temp = C 22 V V Gate Current vs. Frequency vs. V D Pin = 14 dbm, Temp = C 22 V V Drain Current vs. Frequency vs. Temp. Pin = 14 dbm Gate Current vs. Frequency vs. Temp. Pin = 14 dbm C C , 9 Drain Current vs. Input Power vs. Freq. Temp = C Gate Current vs. Input Power vs. Freq. Temp = C GHz 28 GHz GHz 32GHz GHz 28 GHz GHz 32GHz Rev. B - 7 of

8 IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) TGA94-HM Performance Plots Large Signal and Linearity Conditions unless otherwise specified: VD = + V, IDQ = 14 ma, VG = 3 V Typical, CW. IM3 vs. Frequency vs. Temperature Pout/tone = dbm, MHz Tone Spacing - IM5 vs. Frequency vs. Temperature Pout/tone = dbm, MHz Tone Spacing - 85 C C -4 C C C -4 C IM3 vs. Frequency vs. Drain Voltage Pout/tone = dbm, MHz Tone Spacing - IM5 vs. Frequency vs. Drain Voltage Pout/tone = dbm, MHz Tone Spacing V V V V IM3 vs. Frequency vs. Drain Current - IM5 vs. Frequency vs. Drain Current Pout/tone = dbm, MHz Tone Spacing - 28 ma ma 28 ma ma Pout/tone = dbm, MHz Tone Spacing Rev. B - 8 of

9 TGA94-HM Applications Information and Pad Layout V D C4 µf C3 1 µf C2.1 µf C1 1 nf C5 1 nf C6.1 µf C7 1 µf C8 µf RF IN RF OUT Bias Up Procedure 1. Set ID limit to 1.2 A, IG limit to ma 2. Apply 5 V to VG 3. Apply + V to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = 14 ma (VG ~ 3 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Pad Description Pad No. Symbol Description 1-3, 5-7, 9,,12-14, 16-18,,21,23 GND Must be grounded on the PCB. 4 RFIN Output; matched to 5 Ω; DC blocked 8, 11 NC For use with Q EVB, do not connect (pins are connected internal to package) RFOUT Input; matched to 5 Ω; DC blocked 19 VD (1) Drain voltage; Bias network is required; see recommended Application Information above. 22 VG (2) Gate Voltage; Bias network is required; see recommended Application Information above. Notes: 1. If not using TQ EVB, VD may be applied to either pin 11 or pin If not using TQ EVB, VG may be applied to either pin 8 or pin 22. Rev. B - 9 of

10 TGA94-HM Evaluation Board EVB Backside (RF Ground Plane) Location of openings on backside of EVB Openings in RF Ground Plane on EVB backside Notes: 1. Existence of 1mm diameter opening on backside of EVB the openings are required for all EVBs. 2. See Assembly Notes (page 11) for additional detail. Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C5 1 nf Cap, 42, +5 V, %, X7R Various C2, C6.1 μf Cap, 63, +5 V, %, X7R Various C3, C7 (1) 1 μf Cap, 85, +5 V, %, X7R Various C4, C8 (1) μf Cap, 16, +5 V, %, X7R Various Notes: 1. If the designated application is not sensitive to IM3, capacitors C3, C4, C7, and C8 may omitted. Rev. B - of

11 TGA94-HM Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. Apply solder paste to each pin of the TGA94-HM, and heat achieve reflow, being careful not to exceed the thermal budget. 3. Clean the assembly with alcohol. 4. To attain quoted RF performance, the following is required: i. On the printed circuit board, there must be two 1mm (.394 ) diameter openings on the backside (RF Ground Plane) of the circuit board. Location of the openings is contained in the Q Evaluation Board layout. The 1 mm diameter openings for the board are shown in the diagram below in reference to the base of the package. ii. Use of a carrier plate with 2 mm (.787 ) diameter holes. The holes should be located with respect to the package pin-out as shown in the diagram below. The holes should be 4mm deep. 5. To improve thermal performance, the following is recommended: i. The use of a 4 mil indium shim between the circuit board and the carrier plate. ii. The In shim should have the same hole diameter and positioning as the carrier plate (see diagram below for location with respect to the package backside).the holes should be machined fully through the In shim Location of.787 diameter holes for carriers Location of.394 diameter openings for circuit boards \ Rev. B - 11 of

12 TGA94-HM Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Copper Lid: Ceramic All metalized features are gold plated Part is solder sealed Marking: 94: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Rev. B - 12 of

13 TGA94-HM Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) MSL Convection Reflow Class 1A, 4 V JEDEC Standard JESD22 A114 N/A, Hermetic Package JEDEC standard IPC/JEDEC J- STD-. Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-, Lead-free solder, 26 C RoHS Compliance This product is compliant with the 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive /863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br42) Free Pb PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Rev. B - 13 of