QPD GHz, 50 V, 30 W GaN RF Input-Matched Transistor

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Nickolas Hudson
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1 QPD Product Overview The Qorvo QPD is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request. 6 x 5 x 1.09 mm DFN Functional Block Diagram 1 8 Key Features Frequency: 2.7 to 3.5 GHz Output Power (P3dB) 1 : 31 W Linear Gain 1 : 18.4 db Typical PAE3dB 1 : 64 % Operating Voltage: 50 V CW and Pulse capable Note 3.1 GHz Load Pull 2 3 Input Matching NW Applications Military radar Civilian radar Test instrumentation Ordering info Part No. ECCN Description QPDS2 EAR99 Sample of 2 QPD QPDSQ EAR99 Sample of 25 QPD QPDSR EAR99 Sample of 0 QPD QPDEVB01 EAR GHz EVB Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 1 of

2 QPD Absolute Maximum Ratings 1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -7 to +2.0 V Drain Current, IDMAX 4.1 A Gate Current Range, IG See page. ma Power Dissipation, PDISS 2 W RF Input Power, Pulse, 2.9 GHz, T = 25 C dbm Channel Temperature, TCH 275 C Mounting Temperature ( Seconds) 3 C Storage Temperature 65 to +0 C 1. Operation of this device outside the parameter ranges given above may cause permanent damage. 2. Pulsed 0uS PW, % DC Recommended Operating Conditions 1 Parameter Min Typ Max Units Operating Temp. Range C Drain Voltage Range, VD V Drain Bias Current, IDQ 52.5 ma Drain Current, ID 4 0 ma Gate Voltage, VG V Channel Temperature (TCH) 250 C Power Dissipation (PD), Pulsed 2,4 27 W Power Dissipation (PD), CW W 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. To be adjusted to desired IDQ 4. 0uS PW, % DC Measured Load Pull Performance Power Tuned 1 Parameter Typical Values Units Frequency, F GHz Drain Voltage, VD V Drain Bias Current, IDQ ma Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, PAE3dB % Gain at 3dB compression, G3dB db 1. Pulsed, 0 us Pulse Width, % Duty Cycle 2. Characteristic Impedance, Zo = 33.4 Ω. Measured Load Pull Performance Efficiency Tuned 1 Parameter Typical Values Units Frequency, F GHz Drain Voltage, VD V Drain Bias Current, IDQ ma Output Power at 3dB compression, P3dB dbm Power Added Efficiency at 3dB compression, PAE3dB % Gain at 3dB compression, G3dB db 1. Pulsed, 0 us Pulse Width, % Duty Cycle 2. Characteristic Impedance, Zo = 33.4 Ω. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 2 of

3 QPD GHz EVB 2.9 GHz Performance 1 Parameter Min Typ Max Units Linear Gain, GLIN 17 db Output Power at 3dB compression point, P3dB 25 W Drain Efficiency at 3dB compression point, DEFF3dB 57.6 % Gain at 3dB compression point, G3dB 14 db 1. VD = +50 V, IDQ = 52.5 ma, Temp = +25 C, Pulse Width = 128 us, Duty Cycle = % RF Characterization Mismatch Ruggedness at 2.9 GHz Symbol Parameter db Compression Typical VSWR Impedance Mismatch Ruggedness 3 :1 Test conditions unless otherwise noted: TA = 25 C, VD = 50 V, IDQ = 52.5 ma, Pulsed, 128 us Pulse Width, % Duty Cycle Input drive power is determined at pulsed 3dB compression under matched condition at EVB output connector. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 3 of

4 QPD Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 0 us Pulse Width, % Duty Cycle 2. See page 16 for load pull reference planes where the performance was measured. 2.7GHz, Load-pull 0.6 Zs(fo) = iΩ Zl(2fo) = iΩ Max Power is 45.2dBm at Z = iΩ Γ = i Max Gain is 17.5dB at Z = iΩ Γ = i Max PAE is 66.5% at Z = iΩ Γ = i Zo = 33.4Ω Power Gain PAE Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 4 of

5 QPD Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 0 us Pulse Width, % Duty Cycle 2. See page 16 for load pull reference planes where the performance was measured. 3.1GHz, Load-pull Zs(fo) = iΩ Zl(2fo) = iΩ Max Power is 44.9dBm at Z = iΩ Γ = i Max Gain is 18.9dB at Z = iΩ Γ = i Max PAE is 64% at Z = iΩ Γ = i Zo = 33.4Ω Power Gain PAE Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 5 of

6 QPD Measured Load-Pull Smith Charts 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 0 us Pulse Width, % Duty Cycle 2. See page 16 for load pull reference planes where the performance was measured. 3.5GHz, Load-pull Zs(fo) = iΩ Zs(2fo) = iΩ Zl(2fo) = iΩ Max Power is 45dBm at Z = iΩ Γ = i Max Gain is 17.4dB at Z = iΩ Γ = i Max PAE is 65% at Z = iΩ Γ = i Zo = 33.4Ω Power Gain PAE Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 6 of

7 QPD Typical Measured Performance Load-Pull Drive-up 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 0 us Pulse Width, % Duty Cycle 2. See page 16 for load-pull and source-pull reference planes where the performance was measured. Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 2.7 GHz - Power Tuned Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 2.7 GHz - Efficiency Tuned Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 3.1 GHz - Power Tuned Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 3.1 GHz - Efficiency Tuned Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 3.5 GHz - Power Tuned Gain PAE Output Power [dbm] PAE [%] Gain [db] Zs(1fo) = iΩ Zl(1fo) = iΩ Gain and PAE vs. Output Power 3.5 GHz - Efficiency Tuned Gain PAE Output Power [dbm] PAE [%] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 7 of

8 QPD Power Driveup Performance Over Temperatures Of GHz EVB 1 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 128 us Pulse Width, % Duty Cycle P3dB [W] P3dB Over Temperatures - C C 85 C Frequency [GHz] DEFF3dB [%] DEFF3dB Over Temperatures C 25 C C Frequency [GHz] G3dB [db] G3dB Over Temperatures 19 - C C C Frequency [GHz] Pdiss3dB [W] Pdiss3dB Over Temperatures - C 25 C 85 C Frequency [MHz] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 8 of

9 QPD Power Driveup Performance At 25 C Of GHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma, 128 us Pulse Width, % Duty Cycle P3dB [W] P3dB At 25 C Frequency [GHz] DEFF3dB [%] DEFF3dB At 25 C Frequency [GHz] G3dB [db] G3dB At 25 C Frequency [GHz] Pdiss3dB [W] Pdiss3dB At 25 C Frequency [GHz] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 9 of

10 QPD 2-Tone 2.9 GHz Performance At 25 C Of GHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma 2. Tone spacing = 1 MHz GHz and 25degC - Lower IM3 Lower IM5 Upper IM3 Upper IM5 - IM [dbc] Average PEP [dbm] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - of

11 QPD Small Signal Performance At 25 C Of GHz EVB 1, 2 1. Test Conditions: VD = 50 V, IDQ = 52.5 ma 2. K factor > 1 indicates unconditional stability. 0 S11 S S11 [db] S21 [db] Frequency [GHz] Frequency [GHz] 0 S22 2 k-factor S22 [db] k-factor Frequency [GHz] Frequency [GHz] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 11 of

12 1, 2, 3, 4 Thermal and Reliability Information Pulsed QPD Maximum Channel Temperature [ o C] Maximum Channel Temperature vs. Pulse Width vs. Pdiss % Duty Cycle, QFN base fixed at 85 o C Pdiss = 27.3 W Pdiss = 25.2 W Pdiss = 23.1 W 1E6 Operating Hour Limit E E E E E-03 Pulse Width [sec] Parameter Conditions Values Units Thermal Resistance, FEA (θjc) 5.9 C/W Peak Channel Temperature, FEA (TCH) 221 C 85 C Case Median Lifetime (TM) 1 3.8E7 Hrs 23.1 W Pdiss, 0 us PW, % DC Thermal Resistance, IR (θjc) 3.8 C/W Peak Channel Temperature, IR (TCH) 173 C Thermal Resistance, FEA (θjc) 6.0 C/W Peak Channel Temperature, FEA (TCH) 237 C 85 C Case Median Lifetime (TM) 1 1.1E7 Hrs 25.2 W Pdiss, 0 us PW, % DC Thermal Resistance, IR (θjc) 3.85 C/W Peak Channel Temperature, IR (TCH) 182 C Thermal Resistance, FEA (θjc) 6.2 C/W Peak Channel Temperature, FEA (TCH) 253 C 85 C Case Median Lifetime (TM) 1 3.4E6 Hrs 27.3 W Pdiss, 0 us PW, % DC Thermal Resistance, IR (θjc) 3.9 C/W Peak Channel Temperature, IR (TCH) 191 C Notes 1. Median Lifetime under pulsed condition is that under CW condition divided by duty cycle. 2. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 3. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability. 4. Thermal resistance measured to backside of package. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 12 of

13 Thermal and Reliability Information - CW QPD QPD Max Channel Temperature vs. Power Surface of QFN Package Fixed at 85C 1E6 Hour Operating Limit 225 Temperature, C CW Power Dissipation [W] Parameter Conditions Values Units Thermal Resistance, FEA (θjc) 7.9 C/W Peak Channel Temperature, FEA (TCH) 185 C 85 C Case Median Lifetime (TM) 1 1.7E8 Hrs 12.6 W Pdiss, CW Thermal Resistance, IR (θjc) 5.3 C/W Peak Channel Temperature, IR (TCH) 2 C Thermal Resistance, FEA (θjc) 8.6 C/W Peak Channel Temperature, FEA (TCH) 229 C 85 C Case Median Lifetime (TM) 1 4.1E6 Hrs 16.8 W Pdiss, CW Thermal Resistance, IR (θjc) 5.5 C/W Peak Channel Temperature, IR (TCH) 177 C Thermal Resistance, FEA (θjc) 9.4 C/W Peak Channel Temperature, FEA (TCH) 282 C 85 C Case Median Lifetime (TM) 1 9.5E4 Hrs 21 W Pdiss, CW Thermal Resistance, IR (θjc) 5.9 C/W Peak Channel Temperature, IR (TCH) 8 C Notes 1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal references are FEA. 2. Infrared (IR) thermal values are for reference only and should not be used to determine performance or reliability. 3. Thermal resistance measured to backside of package. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 13 of

14 QPD Median Lifetime E+19 Median Lifetime vs. Channel Temperature 1.00E E+17 Median Lifetime, T M (Hours) 1.00E E+ 1.00E E E E E+ 1.00E E E E E Channel Temperature, T CH ( C) 1. Test Conditions: V D = +50 V; Failure Criteria = % reduction in I D_MAX during DC Life Testing. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 14 of

15 QPD Maximum Gate Current Maximum Gate Current [ma] Maximum Gate Current Vs. Channel Temperature Channel Temperature [ C] Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - of

16 QPD Pin Configuration and Description 1 Note 1: The QPD will be marked with the QPD designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number Load-Pull Reference Planes Pin Symbol Description 2, 3 RF IN / VG Gate 6, 7 RF OUT / VD Drain 1, 4, 5, 8 N/C No Connection 9 Source Source / Ground / Backside of part (See next page.) Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 16 of

17 QPD Mechanical Drawing 1 Note 1: Dimensions are in mm. Dimension tolerance is ± 0.1 mm, unless noted otherwise. 9 Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 17 of

18 GHz Application Circuit - Schematic QPD Bias-up Procedure Bias-down Procedure 1. Set V G to -4 V. 1. Turn off RF signal. 2. Set I D current limit to 60 ma. 2. Turn off V D 3. Apply 50 V V D. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust V G until I D is set to 52.5 ma. 4. Turn off V G 5. Set I D current limit to 1 ma (Pulsed operation) 6. Apply RF. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 18 of

QPD 2.7 3.1 GHz Application Circuit - Layout Board material is RO4350B 0.0 thickness with 2oz copper cladding.

19 QPD GHz Application Circuit - Layout Board material is RO4350B 0.0 thickness with 2oz copper cladding. Overall EVB size is 1.58 x Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 19 of

20 QPD GHz Application Circuit - Bill Of material Description Ref. Des. Manufacturer Part Number Cap UF +/-% 16V LOW ESR TANT C2 AVX TPSC6K016R0500 CAP, 00pF,0V, %, X7R, 0603 C7, C AVX 06031C2KAT2A CAP 0.01 UF,0V,5%,X7R,LF,0805 C, C16 TTI 08051C3JAT2A CAP, 4.7 PF, 250V,0603,LF +/-.1P C6 ATC 600S4R7BT250XT CAP, PF,250V,1%,0603 C3, C5, C9, C11 ATC 600S0FT250XT CAP, 1.0pF, +/-0.05pF, 250V, HI-Q CR4 ATC 600S1R0AT250XT CAP, 0.7pF, +/-0.05pF, 250V, HI-Q C4 ATC 600S0R7AT250XT CAP, 22pF, +/-5%, 250V, HI-Q, 0603 C12, C13 ATC 600S2JT250XT CAP, 33uF, %, 80V, ALUM ELEC,8mm SMD C1 Panasonic EEE-FK1K3P CAP, 1.2pF, +/-0.05pF, 250V, C0G C8, C14 ATC 600S1R2AT250XT RES, 2 OHM, 1%, 1/W, 0603 R8, R9 Vishay CRCW06032R00FKEA RES, 1 OHM, 1%, 1/, 0603 R3, R7 Samsung RC1608F1R0CS 33 OHM,5%,0.1W,0603,LEAD FREE R2, R5 KOA RK73B1JTTD3J OHM,1%,0.1W,0603,LEAD FREE R6 KOA RK73H1JTTDR0F CONN, SMA, 4-HOLE PANEL MOUNT J1, J2 Gigalane PSF-S Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - of

21 Recommended Solder Temperature Profile QPD Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 21 of

QPD Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A, > 0V ESDA / JEDEC JS-001-12 ESD Charged Device Model (CDM) TBD JEDEC JESD22-C1F MSL Moisture Sensitivity Level

22 QPD Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Class 1A, > 0V ESDA / JEDEC JS ESD Charged Device Model (CDM) TBD JEDEC JESD22-C1F MSL Moisture Sensitivity Level TBD IPC/JEDEC J-STD-0 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 11/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive /863/EU. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CH12Br2) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: Tel: info-sales@qorvo.com Fax: For technical questions and application information: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 16 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Datasheet Rev. B, Sept. 18, 17 Subject to change without notice - 22 of

QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor

QPD MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD11 is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,