MADL T. PIN-Schottky Anti-Parallel Diode Limiter 10 MHz - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3
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1 Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package RoHS* Compliant and 260 o C Reflow Compatible Functional Schematic N/C N/C Description The MADL is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic packaged that provides both low and high signal frequency operation from 10 MHz to 6 GHz. The anti-parallel arrangement of the PIN limiter and schottky diode provides for broadband performance, eliminating the need for a shunt coil as a DC return. This device is ideally suitable for usage in higher frequency and lower flat leakage limiter microwave circuits applications where higher performance surface mount diode assemblies are required. N/C 3 4 N/C 7 GND Top view Pin Configuration 3 Pin No. Pin Name Description 1 N/C No Connection 2 RF Input Ordering Information 1,2 Part Number Package 3 N/C No Connection 4 N/C No Connection 3000 piece reel 5 RF Output MADL SMB Sample board 6 N/C No Connection 1. Reference Application Note M513 for reel size information. 2. All RF Sample boards include 5 loose parts. 7 Paddle 4 Ground 3. MACOM recommends connecting unused package pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1
2 Electrical Specifications: T A = +25 C Parameter Test Conditions Units Min. Typ. Max. Insertion Loss P incident = -10 dbm, F = 750 MHz db Return Loss P incident = -10 dbm, F = 750 MHz db 20 P1dB Input Compression Power F = 1 GHz dbm +5 C.W. Incident Power 5 F = 4 GHz dbm 34 Peak Incident Power 5 1 µs, 1 % 4 GHz dbm 34 Flat Leakage Power dbm, 1 µs, 1 % 4 GHz dbm 18 Spike Leakage Power 6,7 +34 dbm, 1 µs, 1 % 4 GHz dbm 20 Spike Leakage Energy 6,7 +34 dbm, 1 µs, 1 % 4 GHz ergs 0.01 Recovery Time 5,6,7 ( 1 db of Insertion Loss ) +34 dbm, 1 µs, 1 % 4 GHz ns 100 Input 3rd Order Intermodulation Products (IIP3) P incident = -10 dbm, F1 = GHz, F2 = GHz dbm Incident power ratings defined with 1.2;1 source VSWR and 1.2:1 max load VSWR. 6. Peak incident power defined at 1 µs RF pulse width, 1% duty cycle 7. Spike leakage power and recovery time values are defined at peak power conditions. Absolute Maximum Ratings 8,9 Parameter Peak Incident Power 1 µs pulse, 1% duty (+85 C) CW Incident Power (+85 C) Junction Temperature Operating Temperature Storage Temperature Absolute Maximum +33 dbm +33 dbm +175 C -65 C to +125 C -65 C to +150 C 8. Exceeding any one or combination of these limits may cause permanent damage to this device. 9. MACOM does not recommend sustained operation near these survivability limits. 2
3 PCB Layout PCB Schematic C1 C2 7 GND Parts List Part Value Case Style C1, C2 ( DC Blocks ) 100 pf 0402 Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity These devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. NOTES: 1. REFERENCE JEDEC MO-153-AB FOR ADDITIONAL DIMENSIONAL AND TOLERANCE INFORMATION. 2. ALL DIMENSIONS SHOWN AS INCHES/MM. 3 Reference Application Note S2083 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Plating is 100% matte tin over copper.
4 Typical Performance +25 C Insertion Loss vs. Frequency 0.0 Return Loss vs. Frequency Frequency (GHz) Frequency (GHz) Flat Leakage CW and Pulsed Power, 4 GHz µs, 1% duty CW Input Power (dbm) 4
5 Applications Section Schematic of 3 Stage Limiter using F = 1-6 GHz, P inc = +40 dbm CW, + 47 dbm, 5 us, 1 % duty C1 C2 D1 D2 D3 Parts List 10 Part PN Case Style Description Quantity D1 MADP T ODS-1415 Input PIN Diode 1 D2, D3 11 ODS nd & 3 rd Stage PIN Diode 1 C1, C2 22 pf 0402 DC Block Parts list is shown for 1-6 GHz operation. Component values can be scaled for various frequency bands. 11. D2 and D3 are combined as single. 5
MADS T. Schottky Limiter DC - 6 GHz. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2.
Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
MACP Temperature Compensated Directional RMS Power Detector GHz Rev. V1 Features Functional Schematic Description Pin Configuration 3
Features Integrated Directional Coupler Low Insertion Loss:.5 db @ Min. detectable power: -15 dbm @ Dynamic range: 45 db @ Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm 6-Lead TDFN Halogen-Free
MACP Temperature Compensated Directional RMS Power Detector 2-6 GHz Rev. V1 Features Integrated Directional Coupler Low Insertion Loss: 0.15 db
Features Integrated Directional Coupler Low Insertion Loss: 0.15 db @ 4 GHz Min. detectable power: -15 dbm @ 4 GHz Dynamic range: 45 db @ 4 GHz Built-In Temperature Compensation Lead-Free 1.5 x 1.2 mm
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
MAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
RoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description.
1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free
MAAM Driver Amplifier GHz Rev. V3. Functional Schematic. Features. Description. Pin Configuration 3,4. Ordering Information 1,2
MAAM-11139 7. - 33. GHz Rev. V3 Features 3 Stage for 8/ GHz Bands 1 db Gain dbm Output Third Order Intercept (OIP3) dbm Output P1dB Variable Gain with Adjustable Bias Lead-Free mm Lead PQFN Package RoHS*
Parameter Test Conditions Units Min. Typ. Max. RFC to T X RFC to R X. P IN = +23 dbm, AC 80 MHz / 256 QAM
Features 2.11a,n,ac Applications.9 db T X Insertion Loss 19 db R X Isolation 12 db R X Gain 2.2 db Noise Figure 1 ma Current - db EVM @ 23 dbm Input (2.11ac MHz / 256 QAM) Lead Free 2 mm 12-lead STQFN
MAOC Preliminary Information. Broadband Voltage Controlled Oscillator 6-12 GHz Preliminary - Rev. V3P. Features. Block Diagram.
Features Octave Tuning Bandwidth Phase Noise: -95 dbc/hz @ 100 khz V TUNE Range: 0-23 V Low Current Consumption: 58 ma Excellent Temperature Stability +5 V Bias Supply Lead-Free 4 mm 24-Lead Package RoHS*
MASW SPDT High Isolation Terminated Switch GHz Rev. V4. Features. Functional Block Diagram. Description. Pin Configuration 3
Features Positive Voltage Control High Isolation: 62 db @ 1 GHz 65 db @ 2 GHz Low Insertion Loss: 0.65 db @ 1 GHz 0.70 db @ 2 GHz 50 Ω Internal Terminations Fast Settling for Low Gate Lag requirements
MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1
MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
GND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
MADR V to 250V Driver for High Power PIN Diode Switches Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1
Features 20 V to 250 V Back Bias in Off State 200 ma Series Diode Bias Current at +25 C 50 ma Shunt Diode Bias Current at +25 C Propagation Delay less than 8 µs Low Quiescent Current Consumption 3 V or
MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2
MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,
MAAM Differential CATV Variable Gain Amplifier MHz Rev. V1. Functional Schematic. Features. Pin Configuration 3,4.
Features 36 db Gain 25 db Attenuation Range 2.5 db Noise Figure -62 dbc ACPR @ 67 dbmv Output -1 channel 256 QAM -60 dbc ACPR @ 59 dbmv/channel -4 channel 256 QAM 6 V, 930 ma Differential Input and Output
MAAP STD Power Amplifier, 2 W GHz Rev. V2 Features Functional Schematic Description Pin Configuration2 Ordering Information1
Features 24 db Small Signal Gain 41 dbm Third Order Intercept Point (OIP3) >2 W Output P1dB 35 dbm Saturated Output Power Integrated Power Detector Bias 1330 ma @ 6 V Lead-Free 7 mm Cavity Package RoHS*
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V6P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable from V Power Operation 16 db Gain @ 2.5 GHz 56% Drain Efficiency @ 2.5 GHz 100% RF Tested Lead-Free 3 x
NPT2018. Preliminary Information W GaN Wideband Transistor DC GHz. Preliminary - Rev. V4P. Features. Functional Schematic.
Features GaN on Si HEMT D-Mode Transistor Suitable for Linear and Saturated Applications Tunable From 48 V Operation 16 db Gain @ 2.5 GHz 56 % Drain Efficiency @ 2.5 GHz 100 % RF Tested Lead-Free 3x6 mm
MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3
Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*
MAGX PPR. Preliminary Information. 15 W GaN-Si Transistor in Surface Mount Plastic Package DC GHz. Preliminary - Rev. V2P.
Features GaN on Si Depletion Mode Transistor Technology Unmatched, Common-Source Configuration Ideal for CW and Pulsed Applications Operation up to 50 V, Class AB Lead-Free 3 x 6 mm -lead DFN Package Halogen-Free
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Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier
TQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db
Typical Applications The HMC8LP3E is ideal for: Test Equipment and Sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Cellular Infrastructure Functional Diagram HMC8LP3E v.11 1 GaAs MMIC 1-BIT
RFSWLM S-Band Switch Limiter Module
PRELIMINARY RFSWLM-2420-131 S-Band Switch Limiter Module Features: Surface Mount S- Band Switch Limiter Module 5mm x 8mm x 2.5mm Frequency Range: 2 to 4 GHz Higher Average Power Handling than Plastic Packages
OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
HMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
The RFLM QX-290 Limiter Module carries a Class 0 ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-202802QX-290 Two Stage Passive Limiter Module - SMT Features: Surface Mount Limiter Module: 5mm x 8mm x 2.5mm Passive High Power PIN Limiter Design Frequency Range: 2 GHz to 8 GHz High
High Average Power Handling : High Peak Power Handling: Low Insertion Loss: Low Flat Leakage Power : Low Spike Energy Leakage:
PRELIMINARY RFLM-501202MC-299 Two Stage Passive Limiter Module - SMT Features: Surface Mount Limiter Module: Frequency Range: High Average Power Handling : High Peak Power Handling: Low Insertion Loss:
Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
Quasi Active High Power L Band PIN Diode Limiter Module - SMT. Surface Mount L- Band Limiter Module: High Peak Power Handling:
RELEASED RFLM-102202QX-290 Quasi Active High Power L Band PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module: Frequency Range: High Average Power Handling: High Peak Power Handling:
1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description
Typical Applications The is ideal for: Point-to-Point Microwave Radio VSAT Wideband Power Monitoring Receiver Signal Strength Indication (RSSI) Test & Measurement Functional Diagram Features Wide Input
Parameter Min. Typ. Max. Units
v4.112 Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features General Description The is a
Monolithic Amplifier MNA-5A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
Typical Performance 1. Absolute Maximum Ratings. Parameter
Device Features Typical Isolation = 23 db Typical Insertion Loss = 0.5 db MSL 3 moisture rating Lead-free/RoHS-compliant SOIC-8 Plastic Package With exposed back side ground pad Product Description BeRex
The RFLM102202QX-290 Limiter Module carries a Class 0 ESD rating (HBM) and an MSL 1 moisture rating.
PRELIMINARY RFLM-102202QX-290 PIN Diode Limiter Module - SMT Features: Surface Mount L- Band Limiter Module 5mm x 8mm x 2.5mm Quasi Active High Power PIN Limiter Design Frequency Range: 1 to 2 GHz High