RF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks

Transcription

1 CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations The is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than ±0.4dB from 50MHz to 000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to GHz. The device is selfcontained with 75Ω input and output impedances and requires only two external DC biasing elements to operate as specified MAX 0 MIN Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS !" #$! DC to.0ghz Operation Internally Matched Input and Output 5dB Small Signal Gain 4.9dB Noise Figure +6dBm Output Power Single 9V to V Power Supply PCBA Linear CATV Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 765 Thorndike Road Greensboro, 7409, USA Tel (6) 664 Fax (6) Rev A

2 Absolute Maximum Ratings Parameter Rating Unit Device Current 50 ma Input RF Power +8 dbm Output Load VSWR 0: Ambient Operating Temperature -40 to +85 C Storage Temperature -40 to +50 C Parameter Specification Min. Typ. Max. Unit Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Condition T=5 C, I Overall (50Ω) CC =80mA, R C =Ω, 50Ω System Frequency Range DC to 000 MHz db Bandwidth Gain 4.5 db Noise Figure 4.9 db From 00MHz to 000MHz Input VSWR.7 Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Output VSWR. Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Output IP dbm At 00MHz Output IP +4 dbm At 500MHz Output IP dbm At 900MHz Output IP +6 dbm F =400MHz, F =500MHz, F OUT =00MHz Output P db dbm At 00MHz Output P db +6 dbm At 500MHz Output P db dbm At 900MHz Saturated Output Power dbm At 00MHz Saturated Output Power +7 dbm At 500MHz Saturated Output Power dbm At 900MHz Reverse Isolation 0 db Thermal Theta JC 47 C/W I CC =50mA, P DISS =.W, T AMB =85 C Maximum junction temperature 5 C Mean Time Between Failures 8.6x0 years T AMB =+85 C Mean Time Between Failures.8x0 5 years T AMB =+5 C Theta JC 54 C/W I CC =80mA, P DISS =.7W, T AMB =85 C Maximum Junction Temperature 77 C Mean Time Between Failures 99 years T AMB =+85 C Mean Time Between Failures 9.4x0 years T AMB =+5 C Power Supply Device Voltage 8. V On pin, I CC =50mA Device Voltage 8.7 V On pin, I CC =80mA Operating Current Range ma Actual current determined by V CC and R S -4 Rev A 0007

3 Parameter Specification Min. Typ. Max. Unit Condition T=5 C, I Overall (75Ω) CC =80mA, R C =Ω, 75Ω System Frequency Range DC to 000 MHz db Bandwidth Gain 4.5 db Noise Figure 5. db From 00MHz to 000MHz Input VSWR.: Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Output VSWR.5: Appropriate values for the DC blocking capacitors and bias inductor are required to maintain this VSWR at the intended operating frequency range. Output IP dbm At 00MHz Output IP +4 dbm At 500MHz Output IP dbm At 900MHz Output IP +6 dbm F =400MHz, F =500MHz, F OUT =00MHz Output P db dbm At 00MHz Output P db +6 dbm At 500MHz Output P db dbm At 900MHz Saturated Output Power dbm At 00MHz Saturated Output Power +7 dbm At 500MHz Saturated Output Power dbm At 900MHz Reverse Isolation 0 db 79 Channels 0dBmV per channel, flat, at the input of the amplifier; I CC =50mA, V CC =0.6V XMOD -0 dbc At 55.5MHz -78 dbc At.5MHz -75 dbc At 547.5MHz CTB -88 dbc At 55.5MHz -88 dbc At.5MHz -88 dbc At 547.5MHz CSO+.5MHz -9 dbc At 55.5MHz -78 dbc At.5MHz -70 dbc At 547.5MHz CSO-.5MHz -68 dbc At 55.5MHz -78 dbc At.5MHz -85 dbc At 547.5MHz 0 Channels 0dBmV per channel, flat, at the input of the amplifier; I CC =50mA, V CC =0.6V XMOD -9 dbc At 55.5MHz -77 dbc At.5MHz -75 dbc At 547.5MHz CTB -86 dbc At 55.5MHz -85 dbc At.5MHz -85 dbc At 547.5MHz CSO+.5MHz -9 dbc At 55.5MHz -78 dbc At.5MHz -7 dbc At 547.5MHz CSO-.5MHz -6 dbc At 55.5MHz -68 dbc At.5MHz -8 dbc At 547.5MHz Rev A

4 Pin Function Description Interface Schematic This pin is internally not connected. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Each ground pin should have a via to the ground plane. Same as pin. 4 RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 5 This pin is internally not connected. 6 Same as pin. 7 Same as pin. 8 This pin is internally not connected. 9 This pin is internally not connected. 0 Same as pin. Same as pin. This pin is internally not connected. RF output and bias pin. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. For biasing, an RF choke in series with a resistor is needed. The DC voltage on this pin is typically 8.V with a current of 50mA. See device voltage versus device current plot. In lower power applications the value of R C can be increased to lower the current and V D on this pin. 4 Same as pin. 5 Same as pin. 6 This pin is internally not connected. -6 Rev A 0007

5 V CC 6 5 Ω 0 nf 8 nf µh 8 nf NOTES: Gain Flatness <0.5 db Input and Output Return Loss >0 db in 75 Ω system Ω (Download Bill of Materials from P P- VCC 6 5 R 5 Ω RT = 0. Ω R 5 Ω R 5 Ω R4 5 Ω R5 5 Ω C 0 pf C4 00 nf VCC C5 µf J 4 50 Ω µstrip C nf 4 L. µh 50 Ω µstrip 5 C nf J Rev - Rev A

6 Ω VCC P- P VCC 6 5 R4 56 Ω C 0. uf R 56 Ω R 56 Ω R 56 Ω J C 4 L 75 Ω µstrip nf 000 nh 75 Ω µstrip 4 C 5 nf 6 J Rev - -8 Rev A 0007

7 ! Ω "#$"# Board Thickness 0.0, Board Material FR-4! Ω %&'#$%&'# Board Thickness 0.06, Board Material FR-4 Rev A

8 0.0 Vcc Collector Voltage versus Current 9.0 Collector Voltage (Volts) Collector Current (ma) Ohms, ICC = 50 ma, Temp = 5 C Swp Max GHz Ohms, ICC = 80 ma, Temp = 5 C Swp Max GHz S[,] S[,] S[,] S[,] Swp Min 0.005GHz Swp Min 0.005GHz -0 Rev A 0007