SGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd

Transcription

1 5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with db typical gain and.db noise figure from MHz to 9MHz. This RFIC uses the latest Silicon Germanium HBT process. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS Narrow-band Matching Network RF In Gnd Simplified Device Schematic Vpc Active Bias Network Gnd Narrow-band Matching Network RF Out Features Low Power Consumption, 5.7mA at 3.3V External Input Noise Match High Gain and Low Noise, db and.db respectively at 9MHz Operates from.7v to 3.3V Power Shutdown Capability using VPC 5V ESD, Class B Small Package: SOT-363 High input overdrive capability, +8dBm Applications Low Power LNA for ISM, Cellular and Mobile Communications Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain. db MHz 8... db 9MHz db 575MHz Output Power at db Compression. dbm MHz.5 dbm 9MHz. 3.5 dbm 575MHz Output Third Order Intercept Point 7. dbm MHz.9 dbm 9MHz. 4. dbm 575MHz Input Return Loss 4. dbm MHz 5. dbm 9MHz 8.5. dbm 575MHz Output Return Loss. dbm MHz. dbm 9MHz 4.. dbm 575MHz Noise Figure. dbm MHz. dbm 9MHz.5. dbm 575MHz Reverse Isolation 4. dbm MHz 7. dbm 9MHz Thermal Resistance 73 C/W junction - lead Device Operating Current ma Test Conditions: V S =3.3V, I D =5.mA Typ., IIP 3 Tone Spacing=MHz, P OUT per tone=-5dbm, T L =5 C, Z S =Z L =5, Different Application Circuit per Band RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 6, RF Micro Devices, Inc. of

2 Absolute Maximum Ratings Parameter Rating Unit Device Current (I D ) ma Device Voltage (V D ) 5.5 V RF Input Power* (See Note) 8 dbm Junction Temp (T J ) +5 C Operating Temp Range (T L ) -4 to +85 C Storage Temp +5 C ESD-Rating, Human Body Model B Class (HBM) Moisture Sensitivity Level MSL *Note: Load condition, ZL=5. Load condition, Z L =: VSWR. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D <(T J -T L )/R TH, j-l and T L =T LEAD Id (ma) DCIV over Temperature 5C -4C 3 4 Vd (V) Gain (db) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive /95/EC, halogen free per IEC 649--, < ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <% antimony in solder. Gain Insertion Gain & Isolation Max Gain Isolation Frequency (GHz) Isolation (db) of

3 MHz Application Circuit Data, V S =3.3V, I D =5.mA Note: Tuned for NF Noise Figure vs. Frequency 4 Gain vs. Frequency NF (db) db IM3 (dbc) Input/Output Return Loss, Isolation vs. Frequency, T=5C S S S C IM3 vs. Tone 5C -4C Gain (db) OIP3 (dbm) PdB (dbm) 8 S_5C S_-4C S_ OIP3 vs. Freq. (-5dBm Output Tones) C -4C PdB vs. Frequency 5C -4C Pout per tone (dbm) of

4 45MHz Application Circuit Data, V S =3.3V, I D =5.mA. Note: Tuned for NF NF (db) db IM3 (dbc) Input/Output Return Loss, Isolation vs. Frequency, T=5C S S S Noise Figure vs. Frequency 5C IM3 vs. Tone Pout per tone (dbm) 5C -4C Gain (db) OIP3 (dbm) PdB (dbm) 4 8 Gain vs. Frequency S_5C S_-4C S_ OIP3 vs. Freq. (-5dBm Output Tones) 5C -4C PdB vs. Frequency 5C -4C of

5 9MHz Application Circuit Data, V S =3.3V, I D =5.mA Note: Tuned for NF Noise Figure vs. Frequency 4 Gain vs. Frequency.8.6 NF (db) db IM3 (dbc) Input/Output Return Loss, Isolation vs. Frequency, T=5C S S S C IM3 vs. Tone 5C -4C Pout per tone (dbm) Gain (db) OIP3 (dbm) PdB (dbm) 8 S_5C S_-4C S_ OIP3 vs. Freq. (-5dBm Output Tones) PdB vs. Frequency C -4C 5C -4C 5 of

6 Typical Performance - De-embedded S-parameters S Vs. Frequency S Vs. Frequency 4 GHz Note: 3 GHz GHz.9 GHz.45 GHz. GHz S-parameters are de-embedded to the device leads with ZS=ZL=5. De-embedded S-parameters can be downloaded from our website ( 4 GHz 3 GHz GHz.45 GHz.9 GHz. GHz 6 of

7 Pin Function Description RF IN RF input pin. This pin requires the use of an external DC blocking capacitor and matching components as shown in the application schematics., 5 GND Connect to ground per application circuit drawing. Series feedback used to improve IRL. 3 GND Ground active bias tied internally to pin and 5. 4 RF OUT/VD RF output and bias pin. Bias should be supplied to this pin through and external RF choke. 6 VPC V PC is the bias control pin for the active bias network. Suggested Pad Layout 9MHz Layout MHz & 4MHz Layout Nominal Package Dimensions Dimensions in inches (millimeters) Refer to drawing posted at for tolerances. 7 of

8 Application Schematic for MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace Evaluation Board Layout and Bill of Materials for MHz y 8 of

9 Application Schematic for 45MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace Evaluation Board Layout and Bill of Materials for 45MHz 9 of

10 Application Schematic for 9MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace Evaluation Board Layout and Bill of Materials for 9MHz y of

11 Part Identification Marking Part Number SQ SR PCK PCK PCK3 PCK4 3 Ordering Information 7" Reel with 3 pieces Sample Bag with 5 pieces 7" Reel with pieces Description 7MHz to 3MHz PCBA with 5-piece Sample Bag 4MHz to 48MHz PCBA with 5-piece Sample Bag 87MHz to 93MHz PCBA with 5-piece Sample Bag 54MHz to 6MHz PCBA with 5-piece Sample Bag of