GND GND RFN BALUN RFP GND. Product Description. Ordering Information. Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT

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1 RFFM0.0V TO.V,.GHZ FRONT END MODULE Package Style: Laminate, -Pin, mm x mm x mm C_RX_TX VCCLNA N/C ANTSEL 0 9 CE 8 Features Tx Output Power=dBm Integrated RF Front End Module with Balun, PA, filter, LNA with Bypass mode and DPT switch. Single Bidirectional Differential Transceiver interface. Voltage range=.0 to.v. Applications ZigBee 80.. Based Systems for Remote Monitoring and Control.GHz ISM Band Applications AA Battery Operation Smart Meters for Energy Management RFN RFP Product Description CT 7 BALUN VCC_DIG Functional Block Diagram The RFFM0 integrates a complete solution in a single Front End Module (FEM) for WiFi and ZigBee applications in the.ghz band. This FEM integrates the PA plus harmonic filter in the transmit path. The RFFM0 also integrates a Low Noise Amplifier (LNA) with bypass mode and a balun. The RFFM0 provides a single balanced TDD access for Rx and Tx paths along with two ports on the output for connecting a diversity solution or a test port. The device is provided in a mm x mm x mm, pin laminate package. VCC_PA N/C 7 ANT ANT Ordering Information RFFM0 RFFM0SQ RFFM0SR RFFM0TR RFFM0PCK-0.V Front End Module for AMR systems in the.ghz to.ghz Band Standard piece bag Standard 00 piece reel Standard 00 piece reel Fully assembled evaluation board and loose pieces Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 00, RF Micro Devices, Inc. of 9

2 Absolute Maximum Ratings Parameter Rating Unit DC Supply Voltage.0 V DC Supply Current 00 ma Maximum Tx Input Power + dbm Maximum Rx Input Power + dbm Operating Case Temperature -0 to +8 C Storage Temperature -0 to +0 C ESD HBM per ESDA/Jedec-JDS V ESD CDM per JESD-C0 000 V MSL MSL Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 0//EU, halogen free per IEC 9--, < 000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <% antimony in solder. Parameter Specification Min. Typ. Max. Unit Condition Specifications must be met across supply voltage, Conditions control voltage, and temperature ranges unless otherwise specified. V BATT.. V Operating Temperature Range -0 8 C Z O 0 Ω Off mode current (All controls 0. μa All logic low, Temp= C; Over Voltage LOW) Current sourced through CT pin 8 ma Voltage drop from CT pin to 0. V RFN/RFP Tx Path Nominal Conditions: T= C, V BATT =., Control Voltage= V BATT -0.V unles otherwise noted Frequency 0 80 MHz Input Return Loss db Pins, (RFN, RFP) 00Ω differential Balanced input impedance 00 Ω Amplitude Imbalance - db Phase Imbalance - deg Output Return Loss 0 db Transmit Path Gain db At rated power, nominal conditions Transmit Path Gain. db At rated power,.v to.v, all temperatures Gain flatness db At rated power, nominal conditions Rated Output Power dbm V BATT =.V, all conditions V BATT =.0V, all conditions 0 dbm V BATT to.7v, all temperatures 8 dbm V BATT to.0v, all temperatures Supply current ma At rated power, nominal conditions (V BATT =.V, C), 80.. OQPSK 80 0 ma At rated power,.0v to.v, all temperatures, 80.. OQPSK Thermal Resistance 88 C/W.V CC ; P OUT = dbm; Tref = 8 C of 9

3 Parameter Tx Path (continued) Specification Min. Typ. Max. nd harmonic level - - dbm/mhz At rated power, 80.. OQPSK, all conditions rd harmonic level - - dbm/mhz At rated power, 80.. OQPSK, all conditions rd harmonic level - - dbm/mhz At rated power, 80.. OQPSK, all conditions th harmonic level - - dbm/mhz At rated power, 80.. OQPSK, all conditions VSWR Stability and load mismatch : susceptibility VSWR No damage 8: Gain settling time 0 μs Amplitude imbalance - db Phase imbalance - deg Rx Path to LNA Mode Nominal Conditions: T= C, V BATT =., Control Voltage= V BATT -0.V unles otherwise noted Frequency 0 80 MHz Gain 8 9 db Noise Figure db Nominal Conditions Current. ma IIP 8 dbm Across all voltage and temperature conditions Gain flatness db Input return loss db Output return loss db Pins, (RFN, RFP) 00Ω differential Balanced output impedance 00 Ω Amplitude imbalance - db Phase imbalance - deg Rx Path to Bypass Mode Frequency 0 80 MHz In-band attenuation/noise figure db SW db, Bypass.dB, Balun.dB Current 00 μa IIP 7 dbm Across all voltage and temperature conditions Gain flatness db Input return loss 8 db Output return loss 0 db Pins, (RFN, RFP) 00Ω differential Amplitude imbalance - db Phase imbalance - deg Maximum input power 0 dbm Antenna Switch RF-to-Control Isolation 0 db RF-to-ANT Isolation 7 0 db RF-to-RF Isolation 8 0 db T/R switching time μs Logic Unit Logic Level "High" V BATT - 0. V BATT - 0. V BATT V Logic Level "Low" 0 0. V Input Source Current Logic Level 00 0 μa "High" Input Source Current Logic Level "Low" μa Condition of 9

4 Mode Control Logic CE C_RX_TX C_LNA ANTSEL TX to ANT High High Low Low TX to ANT High High Low High RX to ANT LNA High Low Low Low RX to ANT BYP High Low High Low RX to ANT LNA High Low Low High RX to ANT BYP High Low High High Power Down Low Low Low Low Pin Names and Description Pin Function Description Ground. CE Control voltage pin for chip enable. See logic table. Ground. CT Center tap for passing DC voltage to RFN/RFP pins that connect to TXVR SolC. RFN Differential bi-directional RF port. Matched to 0Ω single-ended, 00Ω differential. RFP Differential bi-directional RF port. Matched to 0Ω single-ended, 00Ω differential. 7 Ground. 8 VCC_DIG Voltage supply pin for Tx power amplifier. 9 Ground. 0 VCC_PA Voltage supply pin for Tx power amplifier. N/C Not connected. Ground. Ground. Ground. ANT Antenna port. Matched 0Ω and DC blocked internally. Ground. 7 ANT Antenna port. Matched 0Ω and DC blocked internally. 8 Ground. 9 Ground. 0 ANTSEL Control pin for antenna selection. See logic table. N/C Not connected. VCC_LNA Voltage supply pin for Rx low noise amplifier. C_LNA Control voltage pin for LNA/bypass modes. See logic table. C_RX_TX Control voltage pin for Tx/Rx modes. See logic table. of 9

5 Pin Out C_RX_TX C_LNA CE ANT RFN ANT RFP VCC_DIG VCC_PA N/C VCCLNA N/C ANTSEL CT of 9

6 Package Drawing of 9

7 PCB Patterns 7 of 9

8 Application Schematic C_LNA C_Rx_Tx VCC ANT SEL 0 9 CE 8 CT 0Ω μstrip U FM0 7 0Ω μstrip 0Ω μstrip J ANT J ANT 0Ω μstrip U BALUN 0MHz 0Ω - 00Ω 0Ω μstrip J RF_COM C 0.μF (00) VCC 8 of 9

9 RFFM0. GHz Front End Module PA Gain(dB) Vs Pout(dBm) Vcc =.V, CE =.V, C_Rx_Tx =.V Freq=. MHz, Temp = - 0, & 8 C PA Gain(dB) Vs Pout(dBm) Vcc =.V, CE =.V, C_Rx_Tx =.V Freq= 0,. & 80 MHz, Temp = C Gain(dB) -0 C C Gain(dB) 0 MHz. MHz 8 C 80 MHz Pout(dBm) Pout(dBm) Pin(dBm) Vs Pout(dBm) PA Operating Current(mA) Vs Output Power(dBm) Vcc =.V, C+ =.V, C_Rx_Tx =.V Vcc =.V, CE =.V, C_Rx_Tx =.V Freq=. MHz, Temp = -0, & 8C Freq=. MHz, Temp = -0, & 8 C Pi(dBm) -0 C C Icc(mA) -0 C C - 8 C 0. 8 C Pout(dBm) Po(dBm) RX Gain(dB) Vs. Frequencey(MHz) Vcc =.V, CE =.V, C_Rx_Tx = 0.V Temp = C RX Noise Figure(dB) Vs. Frequencey(MHz) Vcc =.V, CE =.V, C_Rx_Tx = 0.V Temp = C Gain(dB) 8 C Noise Figure(dB) C F(MHz) F(MHz) 9 of 9