Ultra-linear Mixer with Integrated IF Amp and LO Buffer
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1 CMY212 Datasheet Ultra-linear Mixer with Integrated IF Amp and LO Buffer Description CMY212 is a general purpose down-converter device designed for multiple applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. Due to its excellent intermodulation characteristics and its high conversion gain, CMY212 is particularly suited for CDMA receiver applications. The device combines an ultra-linear mixer with LO - driver and a single stage IF-amplifier in a very small SCT59 package. The mixer section of CMY212 combines low conversion losses and excellent intermodulation characteristics with low requirements of LO - and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The input and output matching of the IF amplifier can be adapted externally within a frequency range from 45 to 250 MHz. Applications Mixer RF in IF out Down Converter for Multiple Wireless Applications Cellular and PCS Mobile Phones Particularly Suited for CDMA Receivers ISM and WLAN Receivers GPS Receivers Package Outline and Pin Configuration, SCT59 1 IF amp in Features Typical overall performance at cellular GND 2 7 GND frequencies (for P LO = -4dBm operation conditions: 3V, 11 ma; f RF = 1 MHz; f LO = 966 MHz): o Gain 10 db Mixer VDD Mixer LO in 3 4 CMY IF amp out IF amp Source o IP3 9 dbm o Noise figure db RF-frequency range GHz Operating voltage range: 2.6 to 5V Small SCT59 plastic package For additional information and latest specifications, see our website: 2
2 Maximum Ratings Parameter Port Symbol Value Unit min max Supply Voltage 3,6 V DD 0 5 V DC-Voltage at LO 4 V 6-3 0,5 V DC-Voltage at 1 V - 0,5 + 0,5 V Mixer RF-IF Port Power into Mixer RF Port 1 P RF 10 dbm Power into LO 4 P in,lo dbm Channel Temperature T Ch 150 C Operating Temperature T op C Storage Temperature T stg C Thermal Resistance* Channel to Soldering Point (GND) R thchs 260 K/W For additional information and latest specifications, see our website: 3
3 Electrical Characteristics Parameter, Comment min typ max Unit RF - frequency range external match GHz LO - Frequency range external match GHz IF Frequency range external match MHz Typical performance at cellular frequencies*: Ta = 25 C; VDD= 3V, frf = 1MHz; flo = 966MHz; PLO = -4dBm; fif = 5MHz, Z S = Z L = 50 Ohm; unless otherwise specified Parameter, Test Conditions Symbol Min typ max Unit Total operating Current (Mixer + IF amplifier) I op ma Conversion Gain G c db SSB Noise Figure F ssb - - db RF -/ IF Output return loss (external matching required) RFIrl / IFOrl db 3rd Order Intercept Point IIP dbm Test conditions at PCS frequencies: Ta = 25 C; VDD= 3V, frf = 1960MHz; flo = 1750MHz; PLO = -4dBm; fif = 210MHz, Z S = Z L = 50 Ohm; unless otherwise specified Parameter, Test Conditions Symbol Min Typ max Unit Total operating Current (Mixer + IF amplifier) I op ma Conversion Gain G c db SSB Noise Figure F ssb db RF -/ IF output return loss (external matching required) RFIrl / IFOrl db 3rd Order Intercept Point IIP dbm * IMPORTANT NOTE: During production, the RF performance at PCS frequencies is screened. The passed devices also achieve the specified RF performance at cellular frequencies. For additional information and latest specifications, see our website: 4
4 Electrical Characteristics (cont) Typical device behavior at cellular frequencies: Ta = 25 C; VDD= 3V, frf = 1MHz; flo = 966MHz; fif = 5MHz; Z S = Z L = 50 Ohm; unless otherwise specified Operating Current [ma] I op Gain IIP Gain [db], IIP3 [dbm] LO Power [dbm] Typical device behavior at PCS frequencies: Ta = 25 C; VDD= 3V, frf = 1960MHz; flo = 1750MHz; fif = 210MHz; Z S = Z L = 50 Ohm; unless otherwise specified IIP3 14 Operating Current [ma] I op Gain Gain [db], IIP3 [dbm] LO Power [dbm] For additional information and latest specifications, see our website: 5
5 Applications Information Test Circuit: Cext2 Lext2 RF Cext1 +3V Lext1 Cext5 1 RF IF Cext6 +3V LO Cext4 GND Lext5 Lext4 Cext7 VD LO Mixer IF Buffer 7 Lext3 6 IF Output Cext Vs Cap 5 GND Cext3 IF Output CMY212 Functional Block Diagram External components for cellular frequencies f RF = 75MHz; f LO = 960MHz; f IF = 5MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 2 pf Lext1 1 nh LL1005 Cext2 1 nf Lext2 270 nh LL160 Cext3 20 pf Lext3 220 nh LL160 Cext4 100 pf Lext4 12 nh LL1005 Cext5 1 nf Lext5 15 nh LL1005 Cext6 1 nf Cext7 3.3 pf Cext 100 nf Lext 22 nh LL1005 External components for PCS frequencies f RF = 1960MHz; f LO = 1750MHz; f IF = 210MHz Capacitors (Murata 0402) Inductors (Toko) Cext1 1 pf Lext1 5.6 nh LL1005 Cext2 1 nf Lext2 6 nh LL160 Cext3 pf Lext3 6 nh LL160 Cext4 22 pf Lext4 4.7 nh LL1005 Cext5 1 nf Lext5 4.7 nh LL1005 Cext6 1 nf Cext7 3 pf Cext 100 nf For additional information and latest specifications, see our website: 6
6 Applications Information (cont) PCB Layout: Size: 35 x 35 mm² RF IF Output LO For additional information and latest specifications, see our website: 7
7 General description and notes CMY212 is a general purpose down-converter device designed for multiple applications such as cellular and PCS mobile phones, ISM bands, GPS receivers, L-band satellite terminals, WLAN and pagers. Due to its excellent intermodulation characteristics and its high conversion gain, CMY212 is particularly suited for CDMA receiver applications. The device combines an ultra-linear mixer with LO - driver and a single stage IF-amplifier in a very small SCT59 package. The mixer section of CMY212 combines low conversion losses and excellent intermodulation characteristics with low requirements of LO - and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The input and output matching of the IF amplifier can be adapted externally within a frequency range from 45 to 250 MHz. Semiconductor Device Outline SCT59--1 For additional information and latest specifications, see our website:
8 Ordering Information Type Marking Ordering code (tape and reel) Package 1) CMY CMY212 SCT59--1 Additional Information This part is compliant with RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). The part is rated Moisture Sensitivity Level 1 at 260 C per JEDEC standard IPC/JEDEC J-STD-020. ESD: Electrostatic discharge sensitive device. Observe handling Precautions. For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: (503) info_wireless@tqs.com Fax: (503) For technical questions and additional information on specific applications: info_wireless@tqs.com The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright 2005 TriQuint Semiconductor, Inc. All rights reserved. For additional information and latest specifications, see our website: 9
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AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
MAAL Low Noise Amplifier GHz Rev. V2. Functional Block Diagram. Features. Description. Pin Configuration. Ordering Information 1,2
MAAL. - 1.6 GHz Rev. V2 Features Low Noise Figure Excellent Input Return Loss Single Voltage Bias 3 V Integrated Active Bias Circuit Current Adjustable 2-8 ma with an External Resistor High Linearity,
QPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
SKY : MHz High Gain and Linearity Diversity Downconversion Mixer
DATA SHEET SKY73089-11: 1200 1700 MHz High Gain and Linearity Diversity Downconversion Mixer Applications 2G/3G base station transceivers: GSM/EDGE, CDMA, UMTS/WCDMA Land mobile radio High performance
TQM Advance Data Sheet
Functional Block Diagram Vcc1 RF In Vmode Vref Input Match 1st Stage PA Product Description 2nd Stage 1 bit Bias Control Output Match Vcc2 RF Out GND GND The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier
SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier
DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications LTE cellular infrastructure and ISM band systems Ultra low-noise, high gain and high linearity
QPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
T1G FS 30W, 28V, DC 6 GHz, GaN RF Power Transistor
Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Frequency: DC to 6 GHz Output Power
GHz RF Front-End Module. o C
Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch
TGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
DATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Wide frequency range Very flat gain High output power High linearity Unconditionally
DATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally
QPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The Qorvo is a highly integrated front-end module targeted for TDD macro or picocell base stations. The switch module integrates RF functional blocks such as a pin-diode based high power
30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
TGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)
Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
CGY2107HV CGY2107HV PRODUCT DATASHEET. Dual High Gain Low Noise High IP3 Amplifier. Rev 0.2 FEATURES APPLICATIONS DESCRIPTION
Rev 0.1 PRODUCT DATASHEET Dual High Gain Low Noise High IP3 Amplifier DESCRIPTION The is an extremely Low Noise cascode Amplifier with state of the art Noise Figure and Linearity suitable for applications