ML485-G. Applications. Functional Block Diagram. Product Features. General Description. Pin Configuration. Ordering Information
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1 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Applications PCS / 3G Base station / Repeaters WCDMA / LTE WiMax / WiBro ISM / Fixed Wireless HPA Feedback Paths Product Features MSOP Package Functional Block Diagram High Dynamic Range Mixer Integrated LO Driver +3 dbm Input IP3 db Conversion Loss RF: 0 00 MHz LO: 0 0 MHz IF: 0 0 MHz + V Supply at 0 ma 0 dbm Drive Level RoHS-compliant MSOP (1 mm 2 ) LO VCC Pin 1 Reference Mark RF IF Backside Paddle - RF/DC General Description The ML high linearity converter combines a passive GaAsFET mixer with an integrated LO driver in an ultrasmall lead-free/green/rohs-compliant MSOP- package. The double-balanced integrated IC is able to operate across a wide GHz frequency range to achieve +3 dbm Input IP3 while drawing a very low 0mA current. The ML can be used as an upconverter or down-converter in a low-side or high-side LO configuration. Pin Configuration Pin No. Symbol 1 LO 2, 3,, Vcc IF RF Backside Paddle A LO buffer amplifier is integrated on the chip to allow for operation directly from a synthesizer requiring only 0 dbm of LO drive level. The dual-stage LO driver provides a stable input power level into the mixer to allow for consistent performance over a wide range of LO power levels. The converter requires no external baluns and supports a wide range of IF frequencies. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in 2.G and 3G mobile infrastructure. Due to the wide frequency range of operation, the converter can also be used for WiMAX, WiBro, ISM, LTE and fixed wireless applications Ordering Information Part No. ML-G Description GHz Mixer w/ Integrated LO Amp ML-PCB Fully Assembled Evaluation Board Standard T/R size = 00 pieces on a reel Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
2 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Absolute Maximum Ratings Parameter Rating Storage Temperature to + C DC Voltage Input IF / RF Power, CW, +2 C LO Power + V +2 dbm + dbm Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units VCC V TCASE 0 + C Tj for > hours MTTF + C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC =+ V, Temp=+2 C, 0 Ω system. (see note 1) Parameter Min Typ Max Min Typ Max Min Typ Max Min Typ Max Units RF Frequency Range MHz LO Frequency Range MHz IF Freq Range MHz SSB Conversion Loss... db Input IP3 (see note 2) dbm LO Leakage RF Port dbm LO Leakage IF Port dbm RF IF Isolation db RF Return Loss db IF Return Loss db LO Return Loss 13 db Input P1dB dbm LO Drive Level dbm Parameter Min Typ Max Units Supply Voltage + V Supply Current 0 ma Thermal Resistance (see note 3) C/W Notes: 1. Specifications are shown with 0dBm LO drive and IF = 200 MHz in a down converting configuration with a low-side LO. 2. IIP3 is measured with f = 1 MHz with RFin = 0 dbm / tone. 3. Thermal resistance is specified junction to case. Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
3 R-I Isolation (db) Input P1dB (dbm) L-R Isolation (db) L-I Isolation (db) RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Performance Plots Test conditions unless otherwise noted: VCC =+ V, Temp=+2 C, 0 Ω system. Conversion Loss vs. RF Freq. vs. IF Freq. +2 C,, low-side LO 0 Input IP3 vs. RF Freq. vs. IF Freq., low-side LO, 2C IF = 1 MHz IF= MHz IF= 201 MHz IF= 1 MHz IF = 1 MHZ IF = MHz IF = 201 MHz IF = 1 MHz L-R Isolation vs. LO Freq. vs.temperature Referenced with 3 L-I Isolation vs. LO Freq. vs. Temperature Referenced with C +2 C - 0 C C +2 C - 0 C 1 0 LO Frequency (GHz) LO Frequency (GHz) 22 R-I Isolation vs. LO Freq. vs. Temperature Referenced with 22 Input P1dB vs. RF Frequency +2 C, IF=201 MHz, Low-side LO at 0 dbm C +2 C - 0 C LO Frequency (GHz) 1 Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
4 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Performance Plots Test conditions unless otherwise noted: VCC =+ V, Temp=+2 C, 0 Ω system. Conversion Loss vs. RF Freq. vs. Temperature LO = 0 db, IF = 1 MHz, low-side LO + C +2 C - 0 C Conversion Loss vs. RF Freq. vs. LO Power +2 C, IF = 1 MHz, low-side LO LO = dbm Conversion Loss vs. RF Freq. vs. Temperature LO = 0 db, IF = 201 MHz, low-side LO + C +2 C - 0 C Conversion Loss vs. RF Freq. vs. LO Power +2 C, IF = 201 MHz, low-side LO LO = dbm Conversion Loss vs. RF Freq. vs. Temperature LO = 0 db, IF = 1 MHz, low-side LO + C +2 C - 0 C Conversion Loss vs. RF Freq. vs. LO Power +2 C, IF = 1 MHz, low-side LO LO = dbm Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
5 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Performance Plots Test conditions unless otherwise noted: VCC =+ V, Temp=+2 C, 0 Ω system Input IP3 vs. RF Freq. vs. Temperature, IF = 1 MHz, low-side LO + C +2 C - 0 C Input IP3 vs. RF Frequency vs. LO Power +2 C, IF = 1 MHz, low-side LO LO = dbm Input IP3 vs. RF Freq. vs. Temperature, IF = 201 MHz, low-side LO 0 3 Input IP3 vs. RF Frequency vs. LO Power +2 C, IF = 201 MHz, low-side LO LO = dbm C +2 C - 0 C Input IP3 vs. RF Freq. vs. Temperature, IF = 1 MHz, low-side LO + C +2 C - 0 C Input IP3 vs. RF Frequency vs. LO Power +2 C, IF = 1 MHz, low-side LO LO = dbm Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
6 LO Return Loss (db) RF Return Loss (db) IF Return Loss (db) RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Performance Plots Test conditions unless otherwise noted: VCC =+ V, Temp=+2 C, 0 Ω system. 0 RF Return Loss vs. RF Frequency +2 C, 0 IF Return Loss vs. IF Frequency +2 C, IF = 1 MHz IF = 201 MHz IF = 1 MHz IF = MHz IF = MHz IF = MHz IF = 10 MHz IF = 10 MHz IF = 200 MHz RF Frequency (MHz) IF Frequency (MHz) 0 LO Return Loss vs. LO Frequency +2 C, LO Frequency (MHz) Spur Table Spur table is N frf M flo mixer spurious products for 0 dbm input power, unless otherwise noted. RF Frequency = MHz, LO Frequency = MHz, All values in dbc relative to the IF Power Level. N M Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
7 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Down Conversion Application Circuit: ML-PCB J J J1 IF Port J Vcc=+V C1 C1 0.01uF U1 J2 U1 ML J3 RF Input LO Port Pin Configuration and Description Pin 1 Reference Mark LO 1 RF 2 3 VCC IF Backside Paddle - RF/DC Pin No. Symbol Description 1 LO Local Oscillator Injection. Internally DC Blocked 2, 3,, RF/DC Ground Vcc Supply voltage. An external bypass capacitor should be used near this pin. IF Intermediate Frequency RF Radio Frequency Backside Paddle RF/DC Ground. Follow recommended via pattern and ensure good solder attach for best thermal and electrical performance. Evaluation Board PCB Information Qorvo PCB Material and Stack-up 0.01" 0.02" ± 0.00" Finished Board Thickness 0.01" Nelco N Core Nelco N oz. Cu top layer 1 oz. Cu inner layer 1 oz. Cu inner layer 1 oz. Cu bottom layer 0 ohm line dimensions: width = 0.02, spacing = 0.02 Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
8 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Package Marking and Dimensions Marking: Part Code M2 Lot Code YXX.0 [0.2]. [1.2] 2. [1.1] NOTES: 1. All dimensions are in millimeters. Angles are in degrees. 2. Except where noted, this part outline conforms to JEDEC standard MO Dimension and tolerance formats conform to ASME Y1.M-1.. The terminal #1 identifier and terminal numbering conform to JESD -1 SPP [.00-01] 1.00 [.0] 2. [1.1].±.01 [.03±.002] SEATING PLANE [ ] 1.2 [.0] DETAIL "A".±.01 [.00±.002] GAUGE PLANE Exposed Paddle.2 [.0].33±.2 [.021±.00] 0-2. [.03] DETAIL "A" Bottom View PCB Mounting Pattern 3 NOTES: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. We recommend a 0.3mm (#0/.013") diameter bit for drilling via holes and a final plated thru diameter of 0.2 mm (0. ).. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
9 RFMD + TriQuint = Qorvo ML GHz High IP3 Mixer with Integrated LO Amp Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 0B Value: V to < 20 V Test: Human Body Model (HBM) Standard: ESDA/JEDEC Standard JS ESD Rating: Class C2 Value: 00 V to < 00 V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C1F MSL Rating MSL Rating: Level 2 Test: 20 C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Solderability Compatible with both lead-free (20 C maximum reflow temperature) and tin/lead (2 C maximum reflow temperature) soldering processes. Contact plating: Matte Tin RoHs Compliance This part is compliant with EU 2002//EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C1HBr02) Free PFOS Free SVHC Free Important Notice For the latest specifications, additional product information, worldwide sales and distribution locations: Web: Tel: customer.support@qorvo.com For information about the merger of RFMD and TriQuint as Qorvo: Web: For technical questions and application information: sjcapplications.engineering@qorvo.com Contact Information The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet Rev. G of - Disclaimer: Subject to change without notice 201 TriQuint Semiconductor, Inc /
10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: ML-PCB ML-G
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TQP7M9 Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24 Pin 4x4 mm QFN Package Product Features Functional Block Diagram MHz +33 dbm PdB
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Applications LTE Band 7 Uplink Infrastructure Base Station General Purpose Wireless 6 Pin 3 x 3 mm leadless SMT Package Product Features Functional Block Diagram 70 MHz Bandwidth High Attenuation Low Loss
More informationAH322-S8G. Not Recommended for New Designs. Applications. Product Features. Functional Block Diagram. General Description.
Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC- Package Product Features Functional Block Diagram -7 MHz.7 db Gain at MHz +
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Applications LTE Band 3 Uplink Infrastructure Base Station General Purpose Wireless 6 Pin 3 x 3 mm leadless SMT Package Product Features Functional Block Diagram 75 MHz Bandwidth High Attenuation Low Loss
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Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
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Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. This amplifier module integrates two gain blocks, a digitalstep attenuator
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Applications Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security 16 Pin 4mm QFN Package Product Features Functional Block Diagram 4 23 MHz 18 db Gain @ 9 MHz +31.5 dbm
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TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
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Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
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