QPB2318SR. 15 db Balanced Return Path Amplifier MHz. Product Overview. Functional Block Diagram. Ordering Information
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- Dana Parker
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1 Product Overview The is an HBT RF balanced amplifier IC operating as a return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option for 5-210MHz interface using an 8V power supply to provide lower overall power dissipation. The can also be used in 5V and single ended applications with reduced linearity requirements. The is packaged in a convenient SOIC8 package and features an externally adjustable bias control. Key Features Package: SOIC-8 with Exposed Pad Functional Block Diagram RFIN1 BIAS1 RFOUT1 GND 5MHz to 210MHz Operation 8V and 5V Operation Gain; 15.5dB Typical Noise Figure 3.8dB Typical Adjustable Bias Using External Resistors SOIC-8 Exposed Pad BIAS2 GND Applications RFIN2 Top View RFOUT2 Head End CMTS Equipment Post Amp for Return Path Optical Receivers DOCSIS 3.1 Optical Nodes Residential Amplifiers and Splitters Ordering Information Part No. SQ SR TR13 PCK Description Sample bag with 25 pieces 7" Reel with 100 pieces 13" Reel with 2500 pieces MHz PCBA with 5 pc sample bag Data Sheet Rev B, August 4, 2017 Subject to change without notice - 1 of
2 Absolute Maximum Ratings Parameter Rating Supply Voltage (VDD) +10V Supply Current (IDD) Maximum CW Input Power for VDD=8V 350mA +18dBm Operating Temperature Range -40 to +85 C Storage Temperature Range 65 to +150 C Maximum Junction Temperature +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Push-Pull Configuration, 8V Parameter Condition (1) Min Typ Max Unit Supply Voltage (V DD) 8 V Supply Current (I DD) 235 ma Frequency Range MHz Gain Full Band 15.5 db Gain Flatness ±0.2 db Gain Tilt Gain(210MHz) - Gain(5MHz) 0.2 db Input Return Loss Full Band 18 db Output Return Loss Full Band 25 db Reverse Isolation Full Band 20 db Noise Figure Includes balun loss 3.8 db DTO f1=13mhz, f2=19mhz 61dBmV per tone 72 -dbc DSO f1=13mhz, f2=19mhz 61dBmV per tone 82 -dbc ACLR Pout = 64dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. 63 db OIP2 12dBm/tone, F1 = 113MHz, F2 = 119MHz 95 dbm OIP3 12dBm/tone, F1 = 113MHz, F2 = 119MHz 48 dbm Output P1dB Full Band 26.2 dbm Thermal Resistance Θ JC 12 C/W 1. Typical performance at these conditions: Temp = +25 C, VDD = +8V, 75Ω system Data Sheet Rev B, August 4, 2017 Subject to change without notice - 2 of
3 Electrical Specifications Single Ended, 8V (50Ω) Parameter Condition (1) Min Typ Max Unit Supply Current (I DD) 115 ma Gain 15.4 db OIP2L 9dBm/tone, F1 = 113MHz, F2 = 123MHz 59.3 dbm OIP2H 9dBm/tone, F1 = 113MHz, F2 = 123MHz 60.1 dbm OIP3 9dBm/tone, F1 = 113MHz, F2 = 123MHz 44.4 dbm 1. Typical performance at these conditions: Singled ended configuration, Temp = +25 C, VDD = +8V, 50Ω system 2. 50ohm data represents factory test conditions Electrical Specifications Push-Pull Configuration, 5V Parameter Condition (1) Min Typ Max Unit Supply Voltage (V DD) 5 V Supply Current (I DD) 110 ma Frequency Range MHz Gain Full Band 15.2 db Gain Flatness ±0.2 db Gain Tilt Gain(210MHz) - Gain(5MHz) 0.15 db Input Return Loss Full Band 19 db Output Return Loss Full Band 26 db Reverse Isolation Full Band 20 db Noise Figure Includes balun loss 3.8 db DTO f1=13mhz, f2=19mhz 53dBmV per tone 67 -dbc DSO f1=13mhz, f2=19mhz 53dBmV per tone 79 -dbc ACLR Pout = 56dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. 64 db OIP2 4dBm/tone, F1 = 113MHz, F2 = 119MHz 83 dbm OIP3 4dBm/tone, F1 = 113MHz, F2 = 119MHz 38 dbm Output P1dB Full Band 21 dbm 1. Typical performance at these conditions: Temp = +25 C, VDD = +5V, 75Ω system Data Sheet Rev B, August 4, 2017 Subject to change without notice - 3 of
4 Electrical Specifications Single Ended Configuration, 5V Parameter Condition (1) Min Typ Max Unit Supply Voltage (V DD) 5 V Supply Current (I DD) 55 ma Frequency Range MHz Gain Full Band 16.5 db Gain Flatness ±0.2 db Gain Tilt Gain(210MHz) - Gain(5MHz) 0.3 db Input Return Loss Full Band 21 db Output Return Loss Full Band 19 db Reverse Isolation Full Band 19 db Noise Figure Full bandwidth 3.7 db DTO f1=13mhz, f2=19mhz 46dBmV per tone 77 -dbc DSO f1=13mhz, f2=19mhz 46dBmV per tone 53 -dbc ACLR Pout = 49dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. 61 db OIP2-3dBm/tone, F1 = 113MHz, F2 = 119MHz 50 dbm OIP3-3dBm/tone, F1 = 113MHz, F2 = 119MHz 36 dbm Output P1dB Full Band 18.7 dbm 1. Typical performance at these conditions: Temp = +25 C, VDD = +5V applied to single amplifier path, 75Ω system Data Sheet Rev B, August 4, 2017 Subject to change without notice - 4 of
5 Evaluation Board Schematic 5-210MHz Data Sheet Rev B, August 4, 2017 Subject to change without notice - 5 of
6 Evaluation Board Bill of Materials Designator Description Manufacturer Part Number PCB DDI -4000(A) C12, C18, C23 CAP, 0.1uF, 10%, 16V, X7R, 0402 Murata Electronics GRM155R71C104KA88D C20, C21 1.0PF,.1PF,50,NPO,0402,LF LEAD FREE Murata Electronics GRM1555C1H1R0BZ01D J1, J2 CONN, F FEM EDGE MOUNT, 75 OHMS, 0.068" Millimeter Wave Technologies, LLC MW-846-C-DD-75 L1 IND, 2.7nH, +/-0.3nH, M/L, 0402 Murata Electronics LQG15HS2N7S02D L4 IND, 6.8nH, 5%, M/L, 0402 Murata Electronics LQG15HN6N8J02D L5, L6 IND, 22uH, 20%, 190mA, M/L, 0603 TDK MLZ1608N220LT000 L7 FER, BEAD, 600 OHM, 300mA, 0402 Murata BLM15HG601SN P1 CONN, HDR, ST, FRCTN LOCK, 4-PIN MOLEX R14, R15 RES, 5.1 OHM, 1%, 1/10W, 0402 Kamaya, Inc RMC1/16SK5R10FTH R4, R5 JMPR, 0 OHM, 0402 Panasonic Industrial Devices Sales ERJ-2GE0R00 R7 Res, 470R /1%/0402/TK100/Chip Kamaya, Inc RMC1/16SK4700FTH R9 RES, 10K, 1%, 1/16W, 0402 Panasonic Industrial Devices Sales ERJ-2RKF1002X T1, T2 XFMR, 3-300MHz, 50 OHM, 250mW, AT224-3 Minicircuits TC2-1TG2-11+ U1 15dB High-Linearity Push-Pull MMIC Qorvo C1, C4, C5, C6, C7, C14, C15, C22, C24, C26, L2, L3, L8, R1, R2, R3, R6, R10, R13 DNP N/A N/A HS1 Heat Sink 1.5 x 2 S1, S2, S3, S4 Screw, 2-56x3/16:, Socket Head Shenzhen Minxingda Automation Equip McMaster-Carr Supply Co A076 Data Sheet Rev B, August 4, 2017 Subject to change without notice - 6 of
7 Evaluation Board Assembly Drawing Data Sheet Rev B, August 4, 2017 Subject to change without notice - 7 of
8 Typical Application Schematic Push-Pull Configuration Typical Application Schematic Single Ended Configuration Data Sheet Rev B, August 4, 2017 Subject to change without notice - 8 of
9 Performance Data Push-Pull Configuration, 8V (1) OIP3: 12dBm/tone, F1 = 113MHz, F2 = 119MHz Data Sheet Rev B, August 4, 2017 Subject to change without notice - 9 of
10 Performance Data Push-Pull Configuration, 8V (2) OIP2: 12dBm/tone, F1 = 113MHz, F2 = 119MHz (3) DSO/DTO: f1=13mhz, f2=19mhz 61dBmV per tone (4) ACLR: Pout = 64dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 10 of
11 Performance Data Push-Pull Configuration, 8V Data Sheet Rev B, August 4, 2017 Subject to change without notice - 11 of
12 Performance Data Push-Pull Configuration, 5V (1) OIP3: 4dBm/tone, F1 = 113MHz, F2 = 119MHz Data Sheet Rev B, August 4, 2017 Subject to change without notice - 12 of
13 Performance Data Push-Pull Configuration, 5V (1) OIP2: 4dBm/tone, F1 = 113MHz, F2 = 119MHz (2) DSO/DTO: f1=13mhz, f2=19mhz 53dBmV per tone (3) ACLR: Pout = 56dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 13 of
14 Performance Data Push-Pull Configuration, 5V Data Sheet Rev B, August 4, 2017 Subject to change without notice - 14 of
15 Performance Data Single Ended Configuration, 5V (1) OIP3: -3dBm/tone, F1 = 113MHz, F2 = 119MHz Data Sheet Rev B, August 4, 2017 Subject to change without notice - 15 of
16 Performance Data Single Ended Configuration, 5V (1) OIP2: -3dBm/tone, F1 = 113MHz, F2 = 119MHz (2) DSO/DTO: f1=13mhz, f2=19mhz 46dBmV per tone (3) ACLR: Pout = 49dBmV, 5-195MHz OFDM w/ 9.6MHz exclusion band. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 16 of
17 Performance Data Single Ended Configuration, 5V Data Sheet Rev B, August 4, 2017 Subject to change without notice - 17 of
18 Pad Configuration and Description RFIN1 RFOUT1 BIAS1 GND BIAS2 GND RFIN2 RFOUT2 T op View Pad No. Label Description 1 RFIN1 RF Input for AMP1 2 BIAS1 AMP1 bias, requires choke to ground 3 BIAS2 AMP2 bias, requires choke to ground 4 RFIN2 RF Input for AMP2 5 RFOUT2 RF Output for AMP2 6 GND Internally Not Connected 7 GND Internally Not Connected 8 RFOUT1 RF Output for AMP1 Backside Paddle GND Ground. Use recommended via pattern to minimize inductance and thermal resistance. See PCB Mounting Pattern for suggested footprint. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 18 of
19 Package Outline 1. Dimensions in millimeters Data Sheet Rev B, August 4, 2017 Subject to change without notice - 19 of
20 Package Marking Recommended Mounting Pattern 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1oz. copper minimum for top and bottom layers 3. Vias are required under the backside paddle for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/0.135 ) diameter bit for drilling via holes and a final plated through diameter of 0.25mm (0.010 ). 4. Ensure good backside paddle solder attach for reliable operation and best electrical performance. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 20 of
21 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) 1B ESDA / JEDEC JS ESD Charged Device Model (CDM) C3 JEDEC JESD22-C101F MSL Moisture Sensitivity Level MSL3 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260 C max. reflow temp.) and tin/lead (245 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2017 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet Rev B, August 4, 2017 Subject to change without notice - 21 of
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Product Overview The is a high linearity, high gain 1 W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP / GaAs HBT delivers high performance across.5 to
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Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage
QPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
TQM EVB. Not for New Designs BC14/BC1/B25 BAW Duplexer. Applications. Functional Block Diagram. Product Features. General Description
TQM96314 Applications CDMA/LTE handset, data card & mobile router applications using the extension PCS band (Band Class 14) / BC1 / B25 8 Pin 2.6 x 2.1 x.88 mm Product Features Excellent Triple Beat Performance:
QPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
TGL2226-SM GHz 6-Bit Digital Attenuator
Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
TAT7469 CATV 75 Ω phemt Dual RF Amplifier
Applications Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth RF Low Noise Figure:
TGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier
17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information
Product Overview The is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
QPB8808SR. 20 db CATV +12 V Power Doubler. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
Product Description The QPB8808 is an ultra-linear, QFN GaAs amplifier MMIC intended for output stage amplification in CATV infrastructure applications. The device features a push-pull cascode design which
AH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description.
Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package Product Features Functional Block Diagram 700-2700
TGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
TGV2561-SM GHz VCO with Divide by 2
GND RFout / 2 Vtune TGV2561-SM Applications Point to Point Radio / VSAT Millimeter-wave Communications Test Equipment 32-pin 5x5mm package Product Features Functional Block Diagram Frequency range: 8.9
QPQ1907SR. 2.4GHz Wi-Fi/BT/LTE Co-Existence BAW Filter. Product Description. Functional Block Diagram. Feature Overview.
2.4GHz Wi-Fi/BT/LTE Co-Existence BAW Filter Product Description The QPQ1907 is a high-performance, high power Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting
TGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
TQP3M9035 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless Product Features 3-pin SOT-89 Package Functional Block Diagram 4-4 MHz +27.5 dbm P1dB +44 dbm Output IP3 GND 4 17.8
QPB7432SR. FTTH xpon Video Receiver. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a 47 1218 MHz High Gain, Low EIN, Single ended RF Optical Receiver for FTTH PON applications. It is a technology leader with an optical input range from -18 dbm to dbm. The, with
TQM EVB B7 BAW Duplexer
Applications LTE handsets, data cards & mobile routers Band 7 2500-2570 MHz Uplink 2620-2690 MHz Downlink 8 Pin 1.6 x 2.0 mm Package Product Features Highly Selective LowDrift BAW Duplexer Low Insertion
TGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
TQP7M W High Linearity Amplifier. Applications. Ordering Information
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features Functional Block Diagram 700-4000 MHz +32.8 dbm
TQM8M GHz Digital Variable Gain Amplifier
Applications Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio IF and RF Applications General Purpose Wireless Product Features Integrates DSA + Amp Functionality 50 4000 MHz Broadband
QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
Product Description Qorvo s is a wideband high power MMIC amplifier fabricated on Qorvo s production.15um GaN on SiC process (QGaN15). The operates from 1 8 GHz and typically provides W saturated output
QPF GHz 1W GaN Front End Module
QPF41 26 3 GHz 1W GaN Front End Module Product Description The QPF41 is a multi-function Gallium Nitride MMIC front - end module targeted for 28 GHz phased array G base stations and terminals. Fabricated
TGA3500-SM 2-12 GHz Driver Amplifier
Applications General Purpose QFN 8x8mm 28L Product Features Frequency Range: 2 12 GHz Power: 23 dbm P SAT Gain: 34 db Output TOI: 29 dbm Noise Figure: 3 db Bias: V D = 5 V, I D = 0 ma, V G1 = -0.7 V, V
QPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
TGA2625-CP GHz 20 W GaN Power Amplifier
Product Description Qorvo s is a packaged high-power X-Band amplifier fabricated on Qorvo s QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625- CP achieves 42.5 dbm saturated output
TGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
TQP3M9039-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features 0.7 db NFmin (Single Channel) at 830 MHz 50 500
TQP3M9041-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features.33 db NFmin (Single Channel) at 26 MHz 23 6 MHz
TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier
Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG
TQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 4-4 MHz +29.5 dbm P1dB +45 dbm
QPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
QPM GHz Multi-Chip T/R Module
QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a
QPA W, 28 V, GHz GaN PA Module
Product Description The QPA3503 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 3 W RMS at the device output covering frequency range from 3.4 to 3.6 GHz. The
TQP3M9040-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features 0.18 db NFmin (Single Channel) at 1950 MHz 1500
Absolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to +
Product Overview The is a single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss and medium power handling capability. The is ideally