TQM GHz 1/4W Digital Variable Gain Amplifier
|
|
- Elvin Hancock
- 5 years ago
- Views:
Transcription
1 Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity and digital variable gain control in.5 db step sizes. This DVGA integrates a gain block, a digital-step attenuator (DSA), and a high linearity ¼-watt amplifier into a compact 4x4 mm package. The internal 6- bit DSA provides a.5 db gain control range and is controlled with a serial periphery interface (SPI TM ). The individual stages are accessible to external ports to allow for optimization of the last stage amplifier for use in any GPP telecom band and also allowing other functional blocks to be added in-between the stages. The features variable gain from db to db at.4 GHz, +4.5 dbm output IP, and +4 dbm PdB while only consuming 74 ma current from a 5V supply. The module is available in a compact 4-pin 4x4 mm leadless SMT package. 4 Pin 4x4 mm leadless SMT Package Key Features 6-4 MHz db Maximum Gain at 4 MHz.5 db Gain Range in.5 db Steps +4.5 dbm Output IP +4 dbm Output PdB.6 db Noise Figure -wire SPI Control Programming Tunable for any GPP telecom band Functional Block Diagram Applications Pin Marking 4 DSA Out Amp In Wireless Infrastructure Small cell BTS PreG / 5G Massive MIMO systems TDD-based architectures DSA In DSA 6 Amp Out / V C 4 5 LE Amp Out / V CC 5 6-BIT SPI 4 SID 6 CLK 7 8 Amp In SOD 9 Top View V DD Backside Paddle /DC GND Ordering Information Part No. Description T 5 pieces on a reel -PCB9 9 MHz Evaluation Board -PCB4 4 MHz Evaluation Board Datasheet, January 4, 8 Subject to change without notice of 9
2 Absolute Maximum Ratings Parameter Rating Storage Temperature 5 to 5 C Input Power, CW, 5Ω, T=5 C Supply Voltage () Digital Input Voltage + dbm +5.5 V +.5 V Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Supply Voltage () V TCASE C Tj for > 6 hours MTTF +7 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: =+5V, Temp= +5 C, matched 4 MHz reference circuit, max. gain setting Parameter Conditions Min Typ Max Units Operational Frequency Range 6 4 MHz Test Frequency 4 MHz Gain 9 5 db Gain Control Range.5 db Step Size.5 db Accuracy Error ±(.+5% of Attenuation setting) db Input Return Loss 7 db Output Return Loss db Output PdB + +4 dbm Output IP Pout = + dbm/tone, f = MHz dbm Noise Figure.5 db Total Supply Current 4 74 ma Amp Current 85 ma Amp Current 87 ma DSA Current ma Thermal Resistance, θjc Junction to case 6.7 C/W Datasheet, January 4, 8 Subject to change without notice of 9
3 Serial Control Interface The has a CMOS SPI TM input compatible serial interface. This serial control interface converts the serial data input stream to parallel output word. The input is -wire (CLK, LE and SID) SPI TM input compatible. At power up, the serial control interface resets the DSA to the minimum gain state. The 6-bit SID (Serial Input Data) word is loaded into the register on rising edge of the CLK, MSB first. When LE is high, CLK is internally disabled. Serial Control Timing Characteristics (Test conditions: V DD = +5 V, Temp.=5 C) Parameter Condition Min Max Units Clock Frequency 5% Duty Cycle MHz LE Setup Time, tlesup after last CLK rising edge ns LE Pulse Width, tlepw ns SID set-up time, tsdsup before CLK rising edge ns SID hold-time, tsdhld after CLK rising edge ns LE Pulse Spacing tle LE to LE pulse spacing 6 ns Propagation Delay tplo LE to Parallel output valid ns Serial Control DC Logic Characteristics (Test conditions: V DD = +5 V, Temp.=5 C) Parameter Condition Min Max Units Input Low State Voltage, VIL.8 V Input High State Voltage, VIH.4 V Output High State Voltage, VOH On SOD pin. V Output Low State Voltage, VOL On SOD pin.8 V Input Current, IIH / IIL On SID, LE and CLK pins + µa SID Control Logic Truth Table MSB 6-Bit Control Word LSB D5 D4 D D D D Gain Relative to Maximum Gain Maximum Gain.5 db db db 4 db 8 db 6 db.5 db Any combination of the possible 64 states will provide a reduction in gain of approximately the sum of the bits selected. Timing Diagram CLK is internally disabled when LE is high LE CLK SID D5-D MSB-LSB t PLO D5-D MSB-LSB t SDSUP t SDHLD t LESUP t LEPW Datasheet, January 4, 8 Subject to change without notice of 9
4 67 65 MHz Reference Design pf.9 nh 8. pf J5-9 C L U DSA SPI nh pf uf J R C5 pf R LE J5- DATA J5- C5.4 pf pf Output L 68 nh 6 CLK J5- J5. See Evaluation Board PCB Information section for material and stack-up.. All components are of 4 size.. The left edge of is placed 88 mil from the device package. J5-. uf J Input C pf SOD J5-4 J5- Bill of Material MHz Reference Design Reference Des. Value Description Manuf. Part Number U n/a ¼ W DVGA Qorvo C,,,, pf CAP, 4, 5%. 5V. NPO/COG various. uf CAP, 4, %, 6V, X7R various C5.4 pf CAP, 4, +/-.PF. 5V. NPO/COG various uf CAP, 4, %, V, X5R various 8. pf CAP, 4, +/-.PF. 5V. NPO/COG various L 68 nh IND, 4, 5%, ceramic core Coilcraft 4CS-68NXJL nh IND, 4, 5%, ceramic core Coilcraft 4CS-NXJL.9 nh IND, 4, CHIP Toko LL5-FHN9S.7 Ω RES, 4, +/- %, /W various R,,, Ω RES, 4, CHIP various Datasheet, January 4, 8 Subject to change without notice 4 of 9
5 PdB (dbm) Attenuation Accuracy OIP (dbm) ACLR (dbc) Gain (db) S (db) S (db) Typical Performance MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency MHz Gain db Input Return Loss db Output Return Loss db Output PdB dbm Output IP Pout= +8 dbm/tone, Δf= MHz dbm LTE Chan. Power () 5 dbc ACLR dbm. ACLR test set-up: CH, MHz BW, LTE E-TM., 9.5 db PAR at.% Probability Performance Plots MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting 4 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Attenuation Accuracy vs. Bit Step Bit Step OIP vs. Pout/tone MHz 65 MHz 5 67 MHz Pout/Tone (dbm) PdB vs. Frequency ACLR vs. Pout LTE CH Mz, Adj ch IBW 8.MHz, PAR 9.5dB no clipping 65 MHz 65 MHz 67 MHz Pout (dbm) Datasheet, January 4, 8 Subject to change without notice 5 of 9
6 -PCB9 Evaluation Board ( MHz) 6.8 pf. nh 4 9 J5-9 C L U DSA SPI nh pf uf J R pf R pf LE J5- DATA J5- Output L 68 nh 6 CLK J5- J5. See Evaluation Board PCB Information section for material and stack-up.. All components are of 4 size.. The left edge of is placed 88 mil from the device package. J5-. uf J Input C pf SOD J5-4 J5- Bill of Material -PCB9 Reference Des. Value Description Manuf. Part Number U n/a ¼ W DVGA Qorvo C,,, pf CAP, 4, 5%. 5V. NPO/COG various. uf CAP, 4, %, 6V, X7R various uf CAP, 4, %, V, X5R various 6.8 pf CAP, 4, +/-.PF. 5V. NPO/COG various L 68 nh IND, 4, 5%, ceramic core Coilcraft 4CS-68NXJL nh IND, 4, 5%, ceramic core Coilcraft 4CS-NXJL. nh IND, 4, CHIP Toko LL5-FHNS R,,,,, Ω RES, 4, CHIP various Datasheet, January 4, 8 Subject to change without notice 6 of 9
7 OIP (dbm) PdB (dbm) Noise Figure (db) Gain (db) S (db) S (db) Typical Performance -PCB9 Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency MHz Gain db Input Return Loss db Output Return Loss 4 4 db Output PdB dbm Output IP Pout= + dbm/tone, Δf= MHz dbm Noise figure... db Performance Plots -PCB9 Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting 45 4 Gain vs. Frequency - Input Return Loss vs. Frequency Output Return Loss vs. Frequency OIP vs. Pout/tone over Frequency 8 PdB vs. Frequency Noise Figure vs. Frequency MHz 95 MHz 869 MHz Pout/tone (dbm) Datasheet, January 4, 8 Subject to change without notice 7 of 9
8 Evaluation Board MHz Reference Design R6.5 pf.5 pf J5-9 C L U R6 DSA SPI nh pf uf J R pf R 8. pf LE J5- DATA J5- Output L 68 nh 6 CLK J5- J5 J5-. uf J Input C pf SOD J5-4 J5-. See Evaluation Board PCB Information section for PCB material and stack-up.. Components are 4 unless specified otherwise. Ohm resistors may be replaced with 5 Ohm traces in the target application layout. Bill of Material MHz Reference Design Reference Des. Value Description Manuf. Part Number U n/a Sample Qorvo C, pf CAP, 4, 5%. 5V. NPO/COG various 8. pf CAP, 4, +/-.5PF. 5V. NPO/COG various pf CAP, 4, 5%. 5V. NPO/COG various. uf CAP, 4, %, 6V, X7R various uf CAP, 4, %, V, X5R various,.5 pf CAP, 4, +/-.PF. 5V. NPO/COG various L 68 nh IND, 5PCT..6 GHz Coilcraft 4CS-68NXJL 8 nh IND, 4, 5%, ceramic core. Coilcraft 4CS-8NXJL 4. Ω RES, 4, 5%, /W, CHIP various R,,,, R6 Ω RES, 4, CHIP various Datasheet, January 4, 8 Subject to change without notice 8 of 9
9 PdB (dbm) Noise Figure (db) Attenuation Accuracy (db) OIP (dbm) ACLR (dbc) Gain (db) Input Return Loss (db) Output Return Loss (db) Typical Performance MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency MHz Gain db Input Return Loss db Output Return Loss db Output PdB dbm Output IP Pout= +8 dbm/tone, Δf= MHz dbm WCDMA Channel Power () At 5 dbc ACLR dbm Noise Figure db. ACLR Test set-up: GPP WCDMA, TM+64 DPCH, +5 MHz offset, PAR =. db at.% Prob Performance Plots MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting 6 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Attenuation Accuracy vs. Bit Step Part No: 85-88MHz OIP vs. Pout/tone 88 MHz 84 MHz 85 MHz ACLR vs. Pout 88 MHz 84 MHz 85 MHz Bit Step Pout/Tone (dbm) Pout (dbm) PdB vs. Frequency Noise Figure vs. Frequency Datasheet, January 4, 8 Subject to change without notice 9 of 9
10 -PCB4 Evaluation Board ( 7 MHz). nh.8 pf. pf J5-9 C L U DSA SPI nh uf pf J R pf R 8. pf LE J5- DATA J5- Output L 68 nh 6 CLK J5- J See Evaluation Board PCB Information section for material and stack-up.. All components are of 4 size. J5-. uf J Input C pf SOD J5-4 J5- Bill of Material -PCB4 Reference Des. Value Description Manuf. Part Number U n/a ¼ W DVGA Qorvo C, pf Cap 4 5% 5V NPO/COG various 8. pf Cap 4 ±. pf 5V NPO/COG AVX 45U8BATA. uf Cap 4 ±% 6V X7R various uf Cap 4 ±% V X5R various pf Cap 4 5% 5V NPO/COG various. pf Cap 4 ±. pf 5V NPO/COG AVX 4UCATA.8 pf Cap 4 ±.75 pf 5V NPO/COG AVX 45UR8BATA L 68 nh Ind 4 various 8 nh Ind 4 various. nh Ind 4 various R,,, Ω Res 4 various 4. Ω Res 4 various Datasheet, January 4, 8 Subject to change without notice of 9
11 Attenuation Accuracy (db) OIP (dbm) PdB (dbm) NF (db) Gain (db) S (db) S (db) Typical Performance -PCB4 Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency 4 7 MHz Gain db Input Return Loss db Output Return Loss 5 4 db Output PdB dbm OIP Pout= + dbm/tone, Δf= MHz dbm Noise figure db Performance Plots -PCB4 Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting 9 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency C +5 C 4 C C +5 C 4 C C +5 C 4 C OIP vs. Frequency 6 PdB vs. Frequency NF vs. Frequency 5 45 Pout=+ dbm/tone MHz tone spacing +85 C +5 C 4 C C +5 C 4 C C +5 C 4 C Attenuation Accuracy vs. Attenuation.5 7 MHz MHz MHz Attenuation (db) Datasheet, January 4, 8 Subject to change without notice of 9
12 7 MHz Reference Design pf. pf 4 9 J5-9 C L U DSA SPI nh pf uf J R pf R pf LE J5- DATA J5- Output L 8 nh 6 CLK J5- J5 J5-. uf J Input C pf SOD J5-4 J5-. See Evaluation Board PCB Information section for PCB material and stack-up.. Components are 4 unless specified otherwise. Ohm resistors may be replaced with 5 Ohm traces in the target application layout. Bill of Material 7 MHz Reference Design Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board Qorvo 9578 U N/A Variable Gain Amplifier Qorvo C,, pf CAP, 4, 5%. 5V. NPO/COG various pf CAP, 4, +/-.5PF. 5V. NPO/COG various. uf CAP, 4, %, 6V, X7R various uf CAP, 4, %, V, X5R various. pf CAP, 4, +/-.5PF. 5V. ACCU-P AVX 4JABSTR pf CAP, 4, +/-.5PF. 5V. NPO/COG various L, 8 nh IND, 4, 5%, ceramic core. Coilcraft 4CS-8NXJL R,,,,, Ω RES, 4, CHIP various Datasheet, January 4, 8 Subject to change without notice of 9
13 PdB (dbm) OIP (dbm) Gain (db) Return Loss (db) Typical Performance 7 MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency MHz Gain db Input Return Loss db Output Return Loss 6 db Output PdB dbm Output IP Pout= + dbm/tone, Δf= MHz dbm Performance Plots 7 MHz Reference Design Test conditions unless otherwise noted: =+5 V, Temp=+5 C, DSA at max. gain setting Gain vs. Frequency - Return Loss vs. Frequency Output RL Input RL PdB vs. Frequency OIP vs. Pout/tone over Frequency MHz 6 MHz 5 MHz Pout/tone (dbm) Datasheet, January 4, 8 Subject to change without notice of 9
14 4 6 MHz Reference Design.6 pf 4 9 J5-9 L SPI nh pf uf L4 C U DSA 6 C.pF J R C Place piece of trace to cover the gap pf L 8 nh R pf LE J5- DATA J5- CLK J5- Output J5 J5-. uf J Input C pf L4. nh SOD J5-4 J5-. See Evaluation Board PCB Information section for PCB material and stack-up.. Components are 4 unless specified otherwise. Ohm resistors may be replaced with 5 Ohm traces in the target application layout. 4. Critical component placement: a. Distance between U to L4 (left edge): 8 mils b. Distance between to C (edge to edge): mils Bill of Material 4 6 MHz Reference Design Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board Qorvo 9578 U N/A Variable Gain Amplifier Qorvo C,, pf CAP, 4, 5%. 5V. NPO/COG various pf CAP, 4, +/-.5PF. 5V. NPO/COG various. uf CAP, 4, %, 6V, X7R various uf CAP, 4, %, V, X5R various Use Copper/Metal strip to connect gap various.6 pf CAP, 4, +/-.5PF. 5V. ACCU-P AVX 4JBBSTR C.pF CAP, 4, +/-.5PF. 5V. ACCU-P AVX 4JABSTR L, 8 nh IND, 4, 5%, ceramic core. Coilcraft 4CS-8NXJL L4.nH IND, 4 Multilayer Chip Toko LL5-FHNS R,,,, Ω RES, 4, CHIP various Datasheet, January 4, 8 Subject to change without notice 4 of 9
15 OIP (dbm) PdB (dbm) Gain (db) Return Loss (db) Typical Performance 4 6 MHz Reference Design Test conditions unless otherwise noted: =+5V, Temp= +5 C, DSA at max. gain setting Parameter Conditions Typical Values Units Frequency MHz Gain db Input Return Loss 8 9 db Output Return Loss db Output PdB dbm Output IP Pout= + dbm/tone, Δf= MHz dbm Performance Plots 4 6 MHz Reference Design Test conditions unless otherwise noted: =+5 V, Temp=+5 C, DSA at max. gain setting Minimum Attenuation State Gain vs. Frequency Minimum Attenuation State Return Loss vs. Frequency Input Return Loss Output Return Loss Minimum Attenuation State OIP vs. Pout/tone 6 PdB vs Frequency MHz 5 MHz 6 MHz 8 9 Pout/Tone (dbm) Datasheet, January 4, 8 Subject to change without notice 5 of 9
16 Detailed Device Description The is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. The amplifier module features the integration of a 5 Ω internally matched high linearity low noise amplifier gain block, a digital step attenuator (DSA), along with a high linearity ¼W amplifier as shown in the functional diagram below. The DVGA has an operational frequency range from.7 4. GHz. The three stages are individually accessible via package I/O contacts. This permits full flexibility to insert other components or filters between the stages. Functional Schematic Diagram AMP DSA AMP SPI AMP AMP is a high linearity low noise amplifier. The amplifier has high gain across a broad range of frequencies while also providing very low noise. It is internally matched and only requires an external choke and blocking/bypass capacitors for operation from a single +5V supply. The internal active bias circuit also enables stable operation over bias and temperature variations. At.9 GHz, the amplifier typically provides 9.8 db gain, +6 dbm OIP, and. db Noise Figure while only drawing 85 ma of current. DSA (Digital Step Attenuator) The DSA is a high linearity, low insertion loss, 6-bit,.5 db Digital Step Attenuator (DSA) operating over the 7-4 MHz frequency range. The digital step attenuator uses a single positive 5V supply and has a serial periphery interface (SPI TM ) for changing attenuation states. This product maintains high attenuation accuracy over frequency and temperature. No external matching components are needed for the DSA. AMP AMP is a high-linearity driver amplifier that delivers high performance past 4GHz. With external tuning it can achieve over +4 dbm OIP with +5 dbm PdB while only consuming 87 ma of quiescent current. Chain Analysis Table This table provides the typical performance of individual stages in the module as well as overall module performance. Frequency = 4 MHz. Parameter AMP DSA AMP Overall Module Units Gain db NF db OIP dbm PdB.9.9 dbm Icc ma Datasheet, January 4, 8 Subject to change without notice 6 of 9
17 Pin Configuration and Description Pin Marking 4 DSA Out Amp In DSA In DSA 6 Amp Out / V C 4 5 LE Amp Out / V CC 5 6-BIT SPI 4 SID 6 CLK Amp In SOD V DD Backside Paddle /DC GND Pin No. Label Description,, 4, 6, 7, 9,, 7, No electrical connection. Land pads should be provided for PCB mounting 8, 9,,, 4 integrity. DSA In DSA Input 5 Amp Out / VCC output / DC supply (Amp). 8 Amp In input (Amp). Band-specific matching circuit required. SOD Serial Output Data DC Supply CLK Serial Clock 4 SID Serial Input Data 5 LE Latch Enable 6 Amp Out / VC output / DC supply (Amp). Band-specific matching circuit required. Amp In input (Amp). Band-specific matching circuit required. DSA Out DSA Output Backside Paddle /DC GND /DC ground. Use recommended via pattern to minimize inductance and thermal resistance. See PCB Mounting Pattern. Evaluation Board PCB Information Qorvo PCB 9578 Material and Stack-up.4".6 ±.6 Finished Board Thickness.4" Nelco N-4- Nelco N-4- ε r =.7 typ. Nelco N-4- oz. Cu top layer oz. Cu inner layer oz. Cu inner layer oz. Cu bottom layer Datasheet, January 4, 8 Subject to change without notice 7 of 9
18 Mechanical Information Package Marking and Dimensions Marking: Part number Year/week/country code - YYWW CCCC Trace Code Up to 6 characters. All dimensions are in millimeters. Angles are in degrees.. Dimension and tolerance formats conform to ASME Y4.4M The terminal # identifier and terminal numbering conform to JESD 95- SPP-. PCB Mounting Pattern 6X PACKAGE OUTLINE 4X.8.5 PITCH R.9.9 4X COMPONENT SIDE. All dimensions are in millimeters. Angles are in degrees.. Use oz. copper minimum for top and bottom layer metal.. Vias are required under the backside paddle of this device for proper /DC grounding and thermal dissipation. 4. Do not remove or minimize via hole structure in the PCB. Thermal and grounding is critical. 5. We recommend a.5mm (#8/.5") dia. bit for drilling via holes and a final plated thru diameter of.5 mm (. ). 6. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. 7. There is no effect to the performance if Pads 9 and are removed from the land pattern. Datasheet, January 4, 8 Subject to change without notice 8 of 9
19 Handling Precautions Parameter Rating Standard ESD Human Body Model (HBM) Level A ESDA / JEDEC JS-- ESD Charged Device Model (CDM) Level JEDEC JESD-CF MSL Moisture Sensitivity Level Level IPC/JEDEC J-STD- Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (6 C max. reflow temp.) and tin/lead (45 C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Electrolytic plated Au over Ni RoHS Compliance This part is compliant with EU /95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C5HBr4) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: Tel: customer.support@qorvo.com For technical questions and application information: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PEORMAE, USAGE OF TRADE OR OTHERWISE, ILUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 7 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Datasheet, January 4, 8 Subject to change without notice 9 of 9
TQM GHz ¼W Digital Variable Gain Amplifier
Applications 3G / 4G Wireless Infrastructure Repeaters LTE / WCDMA / CDMA 4 Pin 4x4 mm leadless SMT Package Product Features Functional Block Diagram 7-4 MHz 3 db Maximum Gain at 4 MHz 3.5 db Gain Range
More informationTQM GHz 1/2 W Digital Variable Gain Amplifier
Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. This amplifier module integrates a gain block, a digital-step attenuator (DSA),
More informationTQP9113* 1 W Linear Amplifier. General Description. Product Features. Applications. Functional Block Diagram. Ordering Information
General Description The is a 1 W, linear, two-stage driver amplifier in a low-cost surface-mount package. The amplifier is able to achieve high performance with +42 dbm OIP3 and +30.4 dbm P1dB while only
More informationTQM8M GHz Digital Variable Gain Amplifier
Applications Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio IF and RF Applications General Purpose Wireless Product Features Integrates DSA + Amp Functionality 50 4000 MHz Broadband
More informationTQM8M9077 PCB GHz Digital Variable Gain Amplifier. Applications. Product Features. Functional Block Diagram. General Description
TQM8M977 Applications Wireless Infrastructure Fixed Wireless Microwave and Satellite Radio IF and RF Applications General Purpose Wireless Product Features Integrates DSA + Amp Functionality 5 4 MHz Broadband
More informationTQP3M9028 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
More informationQPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
More informationQPA9801SR MHz 1/4W Balanced Amplifier. General Description. Product Features. Functional Block Diagram Applications. Ordering Information
General Description The is a balanced amplifier module with embedded hybrid couplers to convert to single ended input and output ports. The module has an enable pin to allow for shutting down of the amplifier.
More informationTQP7M W High Linearity Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a high linearity driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies
More informationTQP MHz Power Amplifier. General Description. Product Features. Functional Block Diagram. Ordering Information
General Description The is a high-efficiency two-stage power amplifier in a low-cost surface-mount package. The amplifier is able to achieve 31% power added efficiency at +27 dbm output power while operating
More informationQPL9065SR. Ultra Low-Noise 2-Stage Bypass LNA. Product Description. Product Features. Applications. Functional Block Diagram. Ordering Information
QPL965 Product Description The QPL965 is a high-linearity, ultra-low noise 2-stage gain block amplifier module with a bypass mode functionality integrated to the second stage in the product. At 1.95 GHz,
More informationTQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
More informationTQM879008TR GHz 1/2 W Digital Variable Gain Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a digital variable gain amplifier (DVGA) featuring high linearity over the entire gain control range. This amplifier module integrates two gain blocks, a digitalstep attenuator
More informationTQP DC 6 GHz Gain Block
Product Description The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 19 db gain, +31.7 dbm OIP3,
More informationTQP7M W High Linearity Amplifier. General Description. Product Features. Applications. Functional Block Diagram. Ordering Information
General Description The is a high linearity driver amplifier in a lowcost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with
More informationTQP3M9018 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 6 Pin x mm QFN Package Product Features Functional Block Diagram -4 MHz.5 db Gain at 9 MHz. db Noise Figure
More informationTQP7M W High Linearity Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications
Product Overview The is a high linearity, high gain 1 W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP / GaAs HBT delivers high performance across.5 to
More informationQPB9318 Dual-Channel Switch LNA Module
9 Product Overview The is a highly integrated front-end module targeted for TDD base stations. The switch module integrates a two-stage and a high power switch in a dual channel configuration. Power down
More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features 5-15 MHz +3 dbm P1dB at 94MHz +49 dbm Output IP3 at 94MHz
More informationQPB9325SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The Qorvo is a highly integrated front-end module targeted for TDD macro or picocell base stations. The switch module integrates RF functional blocks such as a pin-diode based high power
More informationTQM GHz ¼ W Digital Variable Gain Amplifier
Applications 3G / 4G Wireless Infrastructure CDMA, WCDMA, LTE Repeaters ISM Infrastructure Product Features 28-pin 6x6 mm leadless SMT package Functional Block Diagram 0.6-1.0 GHz Frequency Range 31.5
More informationTQP GHz 8W High Linearity Power Amplifier
TQP331 Applications Small Cells / Repeaters / DAS Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA TBD 12 Pin 4x5 mm DFN Package Product Features Functional Block Diagram 4-27
More informationQPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
More informationQPB9324SR. High Power Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The Qorvo is a highly integrated front-end module targeted for TDD macro or picocell base stations. The switch module integrates RF functional blocks such as a pin-diode based high power
More informationTQL9065 Ultra Low Noise 2-Stage Bypass LNA
Applications Base Station Receivers Tower Mount Amplifiers Repeaters FDD-LTE, TDD-LTE, WCDMA General Purpose Wireless Product Features 16-pin 3.5 x 3.5 mm Package Functional Block Diagram 1.5 3.8 GHz Operational
More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless Product Features 3-pin SOT-89 Package Functional Block Diagram 4-4 MHz +27.5 dbm P1dB +44 dbm Output IP3 GND 4 17.8
More informationTQP9309SR. High Efficiency 0.5W Small Cell Power Amplifier. General Description. Product Features. Functional Block Diagram.
General Description The is a high-efficiency two-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature compensation circuitry, suitable for small cell base
More informationTQL9093. Ultra low noise, Flat Gain LNA. Applications. Product Features. Functional Block Diagram. General Description.
Applications Repeaters / DAS Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 0.6-4.2 GHz Operational Bandwidth Ultra low noise figure, 0.67 db
More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features Functional Block Diagram 700-4000 MHz +32.8 dbm
More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information. Part No. Description
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 4-4 MHz +29.5 dbm P1dB +45 dbm
More informationAH323-G. 2W High Linearity 5V 2-Stage Amplifier. Applications. Product Features. Functional Block Diagram. General Description.
Applications Base stations / Repeaters High Power Amplifiers 2G / 3G / 4G Wireless Infrastructure Femtocells LTE / WCDMA / CDMA 20 Pin 5x5 mm QFN Package Product Features Functional Block Diagram 700-2700
More informationWJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
More informationTQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
More informationTQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
More informationTQP7M Watt High Linearity Amplifier. General Description. Product Features. Functional Block Diagram. Applications. Ordering Information
General Description The is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP / GaAs HBT delivers high performance across 6 27 MHz range of frequencies
More informationRFSW1012SR. Broadband SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Ordering Information
Product Overview The is a single-pole double-throw (SPDT) switch designed for applications requiring very low insertion loss and high power handling capability. The excellent linearity performance of the
More informationTQP3M9035 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db
More informationTGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationTQP3M9037 Ultra Low-Noise, High Linearity LNA
TQP3M937 General Description The TQP3M937 is a high-linearity, ultra-low noise gain block amplifier in a small x mm surface-mount package. At 1.95 GHz, the amplifier typically provides db gain, +35 dbm
More informationECG055B-G InGaP HBT Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
More informationQPA GHz Variable Gain Driver Amplifier
QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationTQP7M W High Linearity Amplifier. Applications. Product Features. Functional Block Diagram. Pin Configuration. General Description
TQP7M9 Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24 Pin 4x4 mm QFN Package Product Features Functional Block Diagram MHz +33 dbm PdB
More informationTQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
More informationML485-G. Applications. Functional Block Diagram. Product Features. General Description. Pin Configuration. Ordering Information
RFMD + TriQuint = Qorvo ML 1.-3.2 GHz High IP3 Mixer with Integrated LO Amp Applications PCS / 3G Base station / Repeaters WCDMA / LTE WiMax / WiBro ISM / Fixed Wireless HPA Feedback Paths Product Features
More informationQPC7336TR13. 45MHz to 1218MHz Variable Equalizer. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
45MHz to 1218MHz Variable Equalizer Product Description The QPC7336 is a voltage controlled variable equalizer employing SOI attenuator, optimized for DOCSIS 3.1 operation between 45MHz and 1218MHz. 14
More informationQPB7400SR QPB7400PCK. CATV 75Ω Adjustable Low Gain (9 11dB) RF Amplifier. Product Overview. Key Features. Functional Block Diagram.
Product Overview The is a low-cost RF amplifier designed for applications from 47 to 1218 MHz. The balance of low noise and distortion provides an ideal solution for a wide range of broadband amplifiers
More informationTGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
More informationTQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
More informationTGS2355 SM EVB GHz 100 Watt GaN Switch. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s TGS2355 SM is a Single-Pole, Double Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355 SM
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationTAT MHz Variable Gain Return Path Amplifier
Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path Product Features 6x6 mm Pin leadless SMT Package Functional Block Diagram
More informationQPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is an HBT single ended RF amplifier IC operating as return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
More informationApplications Ordering Information
Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Product Features 5-4 MHz Flat gain (14.7 ±.3 db) from.5
More informationTAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
More informationTQP4M9083 High Linearity 7-Bit, 31.75dB Digital Step Attenuator
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipment and Sensors IF and RF Applications General Purpose Wireless Product Features 24-pin 4x4mm leadless QFN package Functional Block
More informationQPD0020S2. 35 W, 48 V, DC 6 GHz, GaN RF Power Transistor. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a 35 W unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and
More informationTGA4535-SM-T/R. K-Band Power Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
TGA4-SM Product Description The TriQuint TGA4-SM is a with integrated power detector. The TGA4-SM operates from 21.2 23.6 GHz and is designed using TriQuint s power phemt production process. The TGA4-SM
More informationQPQ1237TR7. LTE B3/B7 BAW Diplexer (75MHz/70MHz) Product Overview. Key Features. Functional Block Diagram. Applications.
LTE B3/B7 BAW Diplexer (75MHz/7MHz) Product Overview The is a high performance Bulk Acoustic Wave (BAW) Duplexer designed for Band 3 uplink and Band 7 uplink applications. The provides low insertion loss
More informationQPD0210TR7. 2x15 W, 48 V, GHz, Dual GaN RF Transistor. Product Overview. Applications. Functional Block Diagram. Ordering Information
Product Overview The is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. can deliver PSAT of 16.6 W at +48
More informationTGS SM GHz High Power SPDT Reflective Switch
- 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationQPC3223TR7. 50 MHz to 6000 MHz Digital Step Attenuator. Product Description. Product Features. Functional Block Diagram.
5 MHz to 6 MHz Digital Step Attenuator Product Description The is a 2-bit digital step attenuator (DSA) that features high linearity over the entire 18 db gain control range in 6 db steps. The uses a parallel
More informationQPL7210TR7. 2.4GHz Wi-Fi LNA+BAW Receive Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
2.4GHz Wi-Fi LNA+BAW Receive Module Product Overview The provides a complete integrated receive solution in a single placement front end module (FEM) for Wi-Fi 802.11a/n/ac systems. The full integration
More informationQPC6054SR. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
RFC VSS/ V3 Product Description The is a Silicon on Insulator (SOI) single-pole, 5- throw (SP5T) switch design for use in cellular, 3G, LTE and other high performance communications systems. It offers
More informationQPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
More informationTQP3M9039-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features 0.7 db NFmin (Single Channel) at 830 MHz 50 500
More informationAH312-S8G. Not Recommended for New Designs. Applications. Product Features. Functional Block Diagram. General Description.
Applications Final stage amplifiers for Repeaters Mobile Infrastructure Driver stage for High Power Amplifier LTE / WCDMA / EDGE / CDMA SOIC-8 Package Product Features 23 MHz +33 dbm P1dB at 21 MHz +48
More informationRFSA3413TR13. 5 MHz to 6000 MHz Digial Step Attenuator. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
5 MHz to 6000 MHz Digial Step Attenuator Product Overview The RFMD s is a 4-bit digital step attenuator (DSA) that features high linearity over the entire 15dB gain control range with 1.0dB steps. The
More informationQPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
More informationQPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
More informationTGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
More informationTAT Ω 5V MHz RF Amplifier
TAT74 Datasheet: Rev D 04-17-17-1 of 8 - Disclaimer: Subject to change without notice TAT74 Absolute Maximum Ratings Parameter Rating Storage Temperature - to 1 C Device Voltage (VDD) +10 V Operation of
More informationQPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
More informationTGL2226-SM GHz 6-Bit Digital Attenuator
Product Description Qorvo s TGL2226 SM is a wideband, 6 bit digital attenuator fabricated using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from.1 15 GHz, the TGL2226 SM offers a low
More informationQPA GHz GaAs Low Noise Amplifier
General Description Qorvo s QPA9 is a packaged, high-performance, low noise amplifier fabricated on Qorvo s production 9 nm phemt (QPHT9) process. Covering 7 GHz, the QPA9 provides db small signal gain
More informationTQP4M9071 High Linearity 6-Bit, 31.5 db Digital Step Attenuator
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE Test Equipments and Sensors IF and Applications General Purpose Wireless 24-pin 4x4mm leadless QFN package Product Features Functional Block
More informationTQP3M9041-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features.33 db NFmin (Single Channel) at 26 MHz 23 6 MHz
More informationQPM GHz Limiter/Low-Noise Amplifier. Product Description. Product Features. Functional Block Diagram. Ordering Information.
QPM1 Product Description The Qorvo QPM1 is an integrated limiter/lna providing robust, high performance over the 2 2GHz frequency range. The QPM1 delivers 17 db small signal gain with gain control and
More informationTQP3M9040-PCB MHz Dual LNA. Applications. Functional Block Diagram. Product Features. Pin Configuration. General Description
Applications Base Station Receivers Tower Mount Amplifiers Balanced Amplifiers FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless Product Features 0.18 db NFmin (Single Channel) at 1950 MHz 1500
More informationAH322-S8G. Not Recommended for New Designs. Applications. Product Features. Functional Block Diagram. General Description.
Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC- Package Product Features Functional Block Diagram -7 MHz.7 db Gain at MHz +
More informationTGA4548S2. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information GHz 10 W GaN Power Amplifier
17-2 GHz 1 W GaN Power Amplifier Product Overview Qorvo s is a high frequency, high power MMIC amplifier fabricated on Qorvo s production.1um GaN on SiC process (QGaN1). The operates from 17 2 GHz and
More informationQPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationECP100D 1Watt, High Linearity InGaP HBT Amplifier
Applications Final stage amplifiers for Repeaters Mobile Infrastructure Defense / Homeland Security 16 Pin 4mm QFN Package Product Features Functional Block Diagram 4 23 MHz 18 db Gain @ 9 MHz +31.5 dbm
More informationTQQ7399 DC 2700 MHz Through Line
Applications General Purpose Wireless RF Bypass Paths Microwave Radio Test & Measurement Scientific Instruments Product Features 6 Pin 3 x 3 mm leadless SMT Package Functional Block Diagram DC 2700 MHz
More informationQPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
More informationQPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
More informationQPC GHz 6-Bit Digital Phase Shifter
Product Description The Qorvo is a packaged 6-bit digital phase shifter fabricated on Qorvo s high performance.15 um GaAs phemt process. It operates over 2.5-4 GHz while providing 36 of phase coverage
More informationTGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
More informationQPC GHz Phase Shifter with Integrated SPDT
QPC1 Product Description Qorvo s QPC1 integrates a 5-bit digital phase shifter and a SPDT switch inside a small 6x5mm surface mount package. Individually, the Qorvo products include the TGP21 phase shifter
More informationQPB2318SR. 15 db Balanced Return Path Amplifier MHz. Product Overview. Functional Block Diagram. Ordering Information
Product Overview The is an HBT RF balanced amplifier IC operating as a return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
More informationTQM EVB B7 BAW Duplexer
Applications LTE handsets, data cards & mobile routers Band 7 2500-2570 MHz Uplink 2620-2690 MHz Downlink 8 Pin 1.6 x 2.0 mm Package Product Features Highly Selective LowDrift BAW Duplexer Low Insertion
More informationQPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationQPM GHz Multi-Chip T/R Module
QPM21 Product Description The QPM21 is a GaAs multi chip module (MCM) designed for S-Band radar applications within the 2.5-4. GHz range. The device consists of a T/R switch, a transmit path which is a
More informationTGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
More informationTGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
More informationTGA2760-SM GHz Power Amplifier
Applications Point-to-Point Radio -Lead 8.0 x.0 x 2 mm Package Product Features Functional Block Diagram Frequency Range: 9.5 12 GHz Power: +42 dbm Psat Gain: 33 db Integrated Power Detector Bias: V D1
More informationTGV2561-SM GHz VCO with Divide by 2
GND RFout / 2 Vtune TGV2561-SM Applications Point to Point Radio / VSAT Millimeter-wave Communications Test Equipment 32-pin 5x5mm package Product Features Functional Block Diagram Frequency range: 8.9
More informationQPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
More informationTGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
More informationQPQ1907SR. 2.4GHz Wi-Fi/BT/LTE Co-Existence BAW Filter. Product Description. Functional Block Diagram. Feature Overview.
2.4GHz Wi-Fi/BT/LTE Co-Existence BAW Filter Product Description The QPQ1907 is a high-performance, high power Bulk Acoustic Wave (BAW) band-pass filter with extremely steep skirts, simultaneously exhibiting
More information