TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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1 2N425 2N425 B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units VEO ollector-emitter Voltage 3 V VBO ollector-base Voltage 3 V VEBO Emitter-Base Voltage 4. V I ollector urrent - ontinuous 2 ma TJ, Tstg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N425 P D Total Device Dissipation Derate above mw mw/ RθJ Thermal Resistance, Junction to ase 83.3 /W RθJA Thermal Resistance, Junction to Ambient 2 /W 2 Fairchild Semiconductor orporation 2N425, Rev A
2 Electrical haracteristics TA = 25 unless otherwise noted PNP General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units 2N425 OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage* I =. ma, I B = 3 V V(BR)BO ollector-base Breakdown Voltage I = µa, I E = 3 V V(BR)EBO Emitter-Base Breakdown Voltage IE = µa, I = 4. V I BO ollector-utoff urrent V B = 2 V, I E = 5 na IEBO Emitter-utoff urrent VEB = 3. V, I = 5 na ON HARATERISTIS* h FE D urrent Gain V E =. V, I = 2. ma VE =. V, I = 5 ma VE(sat) ollector-emitter Saturation Voltage I = 5 ma, IB = 5. ma.4 V VBE(sat) Base-Emitter Saturation Voltage I = 5 ma, IB = 5. ma.95 V SMALL SIGNAL HARATERISTIS ob Output apacitance V B = 5. V, f = khz 4.5 pf ib Input apacitance VBE =.5 V, f = khz pf hfe Small-Signal urrent Gain I = 2. ma, VE = V, f =. khz I = ma, VE = 2 V, f = MHz NF Noise Figure VE = 5. V, I = µa, RS =. kω, f = Hz to 5.7 khz, *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% db
3 Typical haracteristics PNP General Purpose Amplifier (continued) 2N425 h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent I - OLLETOR URRENT (ma) V =.V E V - OLLETOR EMITTER VOLTAGE (V) ESAT ollector-emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = 2 I - OLLETOR URRENT (ma) V - BASE EMITTER ON VOLTAGE (V) BE( ON) Base Emitter ON Voltage vs ollector urrent I - OLLETOR URRENT (ma) V E = V I - OLLETOR URRENT (na) BO. ollector-utoff urrent vs Ambient Temperature V = 25V B T A - AMBIENT TEMPERATURE ( ) APAITANE (pf) ommon-base Open ircuit Input and Output apacitance vs Reverse Bias Voltage obo ibo. REVERSE BIAS VOLTAGE (V)
4 PNP General Purpose Amplifier (continued) 2N425 Typical haracteristics (continued) NF - NOISE FIGURE (db) Noise Figure vs Frequency V = 5.V E I = µa, R S = 2Ω I =. ma, R = 2Ω S I = µa, R = 2. kω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) Noise Figure vs Source Resistance I =. ma V E = 5.V f =. khz I = µa. R S - SOURE RESISTANE ( kω ) 5 Switching Times vs ollector urrent 5 Turn On and Turn Off Times vs ollector urrent t s t off TIME (ns) I c I B= I B2= t f t r TIME (ns) I c t on I B = V =.5V BE(OFF) I c t off I B= I B2= t on t d I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( )
5 µ Ω Typical haracteristics (continued) PNP General Purpose Amplifier (continued) 2N425 h - VOLTAGE FEEDBAK RATIO (x ) _ 4 re Voltage Feedback Ratio. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance V E = V f =. khz.. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhos) oe Output Admittance V E = V f =. khz. I - OLLETOR URRENT (ma) h - URRENT GAIN fe urrent Gain V E = V f =. khz. I - OLLETOR URRENT (ma)
6 TO-92 Tape and Reel Data TO-92 Packaging onfiguration: Figure. FSINT sample FAIRHILD SEMIONDUTOR ORPORATION HTB:B LOT: BVK74B9 QTY: TAPE and REEL OPTION See Fig 2. for various Reeling Styles NSID: PN2222N SPE: D/: D9842 SPE REV: B2 FSINT QA REV: (FSINT) F63TNR sample LOT: BVK74B9 QTY: 2 FSID: PN222N SPE: D/: D9842 QTY: SPE REV: D/2: QTY2: PN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR ustomized 375mm x 267mm x 375mm Intermediate Box ustomized TO-92 TNR/AMMO PAKING INFROMATION Packing Style Quantity EOL code Reel A 2, D26Z AMMO PAK OPTION See Fig 3. for 2 Ammo Pack Options E 2, D27Z Ammo M 2, D74Z P 2, D75Z Unit weight =.22 gm Reel weight with components =.4 kg Ammo weight with components =.2 kg Max quantity per intermediate box =, units 327mm x 58mm x 35mm Immediate Box ustomized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 23mm x 83mm Intermediate Box FSINT ustomized (TO-92) BULK PAKING INFORMATION EOL ODE DESRIPTION LEADLIP DIMENSION QUANTITY J8Z TO-8 OPTION STD NO LEAD LIP 2. K / BOX J5Z TO-5 OPTION STD NO LEAD LIP.5 K / BOX NO EOL ODE L34Z TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELETRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELETRON SERIES BXXX, BFXXX, BSRXXX), 97, 98 NO LEADLIP NO LEADLIP 2. K / BOX 2. K / BOX BULK OPTION See Bulk Packing Information table FSINT 2 units per EO7 box for std option Anti-static Bubble Sheets 4mm x 2mm x 5mm Immediate Box 5 EO7 boxes per intermediate Box 53mm x 3mm x 83mm Intermediate box ustomized FSINT, units maximum per intermediate box for std option 2 Fairchild Semiconductor orporation March 2, Rev. B
7 TO-92 Tape and Reel Data, continued TO-92 Reeling Style onfiguration: Figure 2. Machine Option A (H) Machine Option E (J) Style A, D26Z, D7Z (s/h) Style E, D27Z, D7Z (s/h) TO-92 Radial Ammo Packaging onfiguration: Figure 3. FIRST WIRE OFF IS OLLETOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS OLLETOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 999, Rev. B
8 TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension onfiguration: Figure 4. P Pd Hd b Ha H HO L d L S W WO W2 t W t P F P2 DO ITEM DESRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b.98 (max) User Direction of Feed omponent Height Lead linch Height Ha HO.928 (+/-.25).63 (+/-.2) omponent Base Height H.748 (+/-.2) omponent Alignment ( side/side ) Pd.4 (max) omponent Alignment ( front/back ) Hd.3 (max) omponent Pitch P.5 (+/-.2) Feed Hole Pitch PO.5 (+/-.8) Hole enter to First Lead P.5 (+.9, -.) Hole enter to omponent enter P2.247 (+/-.7) Lead Spread F/F2.4 (+/-.) Lead Thickness d.8 (+.2, -.3) ut Lead Length L.429 (max) Taped Lead Length L.29 (+.5, -.52) Taped Lead Thickness t.32 (+/-.6) arrier Tape Thickness t.2 (+/-.6) TO-92 Reel onfiguration: Figure 5. arrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W W2.78 (+.2, -.9).236 (+/-.2).35 (max).36 (+/-.25) Sprocket Hole Diameter DO.57 (+.8, -.7) Lead Spring Out S.4 (max) Note : All dimensions are in inches. ELETROSTATI SENSITIVE DEVIES D4 D ITEM DESRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR ustomized D2 Reel Diameter D Arbor Hole Diameter (Standard) D2.6.2 (Small Hole) D ore Diameter D Hub Recess Inner Diameter D Hub Recess Depth W W2 W W3 Flange to Flange Inner Width W Hub to Hub enter Width W3 2.9 Note: All dimensions are inches D3 July 999, Rev. A
9 TO-92 Package Dimensions TO-92 (FS PKG ode 92, 94, 96) : Scale : on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International January 2, Rev. B
10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationTO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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Discrete POWER & Signal Technologies C B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. Sourced
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MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
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E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
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2N443 MMBT443 C 2N443 / MMBT443 E C B E TO-92 SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5
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N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
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C B E PN2 PN2A TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 3 ma. Sourced from Process 68. MMBT2 MMBT2A C SOT-23 Mark:
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2N5771 MMBT5771 C 2N5771 / MMBT5771 C B E TO-92 SOT-23 Mark: 3R B E PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 ma. Sourced from
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B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*
More informationElectrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted PNP RF Transistor (continued) Symbol Parameter Test onditions Min Max Units
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2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
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MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
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2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
More informationE C E B. TO-92 SOT-23 Mark: 3D. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH81 MMBTH81 C MPSH81 / MMBTH81 E C E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0
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2N394 / MMBT394 / PZT394 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz as an
More informationFJA4310. Symbol Parameter Value Units
FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
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FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter
More informationSOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process
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For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute
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KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement
More informationELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD....50 mw @ TA = 25 Deg C BV....200 V (MIN) @ IR = 5 ua ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55
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Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless
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N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3
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SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.
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Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: V CBO = -60V Collector Power Dissipation: P C = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1.
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More informationKSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200
KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol
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V N-Channel PowerTrench MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
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Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T C =25 C unless otherwise noted
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KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum
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More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
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