TO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier.

V I llectr urrent - ntinuus ma T J, T stg Operating and Strage Junctin Temperature Range - t + *These ratings are limiting values abve which the serviceability f any semicnductr device may be

1 N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum Ratings* TA = unless therwise nted Symbl Parameter Value Units V EO llectr-emitter Vltage V V BO llectr-base Vltage 3 V V EBO Emitter-Base Vltage. V I llectr urrent - ntinuus ma T J, T stg Operating and Strage Junctin Temperature Range - t + *These ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTES: ) These ratings are based n a maximum junctin temperature f degrees. ) These are steady state limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. Thermal haracteristics TA = unless therwise nted Symbl haracteristic Max Units N *MMBT P D Ttal Device Dissipatin Derate abve mw mw/ R θj Thermal Resistance, Junctin t ase 83.3 /W R θja Thermal Resistance, Junctin t Ambient 37 /W *Device munted n FR- PB.6" X.6" X.6." Fairchild Semicnductr rpratin N/MMBT, Rev A

2 Electrical haracteristics TA = unless therwise nted Symbl Parameter Test nditins Min Max Units OFF HARATERISTIS (cntinued) V (BR)EO llectr-emitter Breakdwn Vltage I =. ma, I B = V V (BR)BO llectr-base Breakdwn Vltage I = µa, I E = 3 V V (BR)EBO Emitter-Base Breakdwn Vltage I = µa, I =. V I BO llectr utff urrent V B = V, I E = na I EBO Emitter utff urrent V EB = 3. V, I = na N / MMBT ON HARATERISTIS* h FE D urrent Gain I =. ma, V E =. V I = ma, V E =. V 6 36 V E(sat) llectr-emitter Saturatin Vltage I = ma, I B =. ma.3 V V BE(sat) Base-Emitter Saturatin Vltage I = ma, I B =. ma.9 V SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Prduct I = ma, V E = V, f = MHz b Output apacitance V B =. V, I E =, f = khz ib Input apacitance V BE =. V, I =, f =. khz cb llectr-base apcitance V B =. V, I E =, f = khz h fe Small-Signal urrent Gain V E = V, I =. ma, f =. khz NF Nise Figure I = µa, V E =. V, R S =.kω, f= Hz t.7 khz 3 MHz. pf 8. pf. pf 8. db *Pulse Test: Pulse Width 3 µs, Duty ycle.%

3 Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE 3 Typical Pulsed urrent Gain vs llectr urrent -. I - OLLETOR URRENT (ma) V E = V V - OLLETOR-EMITTER VOLTAGE (V) ESAT... (cntinued) llectr-emitter Saturatin Vltage vs llectr urrent β =. I - OLLETOR URRENT (ma) - N / MMBT V - BASE-EMITTER VOLTAGE (V) BESAT.8.6. Base-Emitter Saturatin Vltage vs llectr urrent β = -. I - OLLETOR URRENT (ma) V - BASE-EMITTER ON VOLTAGE (V) BE(ON).8.6. Base-Emitter ON Vltage vs llectr urrent V E = V -.. I - OLLETOR URRENT (ma) I - OLLETOR URRENT (na) BO. V llectr-utff urrent vs Ambient Temperature B = 3V 7 T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) 3 apacitance vs Reverse Bias Vltage ib f =. MHz b. REVERSE BIAS VOLTAGE (V)

4 Typical haracteristics (cntinued) NF - NOISE FIGURE (db) 8 6 Nise Figure vs Frequency I =. ma R S = Ω I = µa R S =. kω I =. ma R S = Ω V =.V E I = µa, R = Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) 8 6 (cntinued) Nise Figure vs Surce Resistance I =. ma I =. ma I = µa I = µa. R S - SOURE RESISTANE ( kω ) N / MMBT h fe - URRENT GAIN (db) 3 3 urrent Gain and Phase Angle vs Frequency h fe V E = V I = ma f - FREQUENY (MHz) θ θ - DEGREES P - POWER DISSIPATION (W) D.7.. TO-9 SOT-3 Pwer Dissipatin vs Ambient Temperature SOT-3 7 TEMPERATURE ( ) TIME (ns) Turn-On Time vs llectr urrent.v V V I B= I B= V = 3.V r t V B = V I - OLLETOR URRENT (ma) t - RISE TIME (ns) r Rise Time vs llectr urrent T J = V = V T = J I B= I B= I - OLLETOR URRENT (ma)

5 Ω µ f Typical haracteristics (cntinued) t - STORAGE TIME (ns) S Strage Time vs llectr urrent T = J T J = I B= I B= t - FALL TIME (ns) (cntinued) Fall Time vs llectr urrent T = J T J = I B= I B= V = V N / MMBT I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma) h - URRENT GAIN fe urrent Gain V E = V f =. khz T A =. I - OLLETOR URRENT (ma) h - OUTPUT ADMITTANE ( mhs) e V E = V f =. khz T A = Output Admittance. I - OLLETOR URRENT (ma) h - INPUT IMPEDANE (k ) ie Input Impedance V E = V f =. khz T A =.. I - OLLETOR URRENT (ma) h - VOLTAGE FEEDBAK RATIO (x ) _ re 7 3 Vltage Feedback Rati V E = V f =. khz T A =. I - OLLETOR URRENT (ma)

6 Test ircuits Duty ycle = % -. V 3 ns.6 V (cntinued) KΩ 3. V 7 Ω <. pf N / MMBT <. ns FIGURE : Delay and Rise Time Equivalent Test ircuit 3. V < t < µs t.9 V 7 Ω Duty ycle = % KΩ <. pf - 9. V <. ns N96 FIGURE : Strage and Fall Time Equivalent Test ircuit

7 TRADEMARKS The fllwing are registered and unregistered trademarks Fairchild Semicnductr wns r is authrized t use and is nt intended t be an exhaustive list f all such trademarks. AEx Bttmless lfet ROSSVOLT DOME E MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life supprt devices r systems are devices r systems which, (a) are intended fr surgical implant int the bdy, r (b) supprt r sustain life, r (c) whse failure t perfrm when prperly used in accrdance with instructins fr use prvided in the labeling, can be reasnably expected t result in significant injury t the user. PRODUT STATUS DEFINITIONS Definitin f Terms FASTr GlbalOptislatr GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PwerTrench QFET QS QT Optelectrnics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLgic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.. A critical cmpnent is any cmpnent f a life supprt device r system whse failure t perfrm can be reasnably expected t cause the failure f the life supprt device r system, r t affect its safety r effectiveness. Datasheet Identificatin Prduct Status Definitin Advance Infrmatin Preliminary N Identificatin Needed Frmative r In Design First Prductin Full Prductin This datasheet cntains the design specificatins fr prduct develpment. Specificatins may change in any manner withut ntice. This datasheet cntains preliminary data, and supplementary data will be published at a later date. Fairchild Semicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. This datasheet cntains final specificatins. Fairchild Semicnductr reserves the right t make changes at any time withut ntice in rder t imprve design. Obslete Nt In Prductin This datasheet cntains specificatins n a prduct that has been discntinued by Fairchild semicnductr. The datasheet is printed fr reference infrmatin nly. Rev. G

参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum