PN2222A/MMBT2222A/PZT2222A NPN General Purpose Amplifier

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PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier This device is fr use as a medium pwer amplifier and switcquiring cllectr currents up t 5m. Surced frm prcess 9.

1 PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier This device is fr use as a medium pwer amplifier and switcquiring cllectr currents up t 5m. Surced frm prcess 9. EB PN2222 MMBT2222 PZT2222 bslute Maximum Ratings * T a = 25 unless therwise nted Symbl Parameter Ratings Units EO llectr-emitter ltage 4 BO llectr-base ltage 75 EBO Emitter-Base ltage 6. I llectr urrent. T STG Operating and Strage Junctin Temperature Range - 55 ~ 5 TO-92 SOT-23 B SOT-223 Mark:P E B February 29 E PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier * This ratings are limiting values abve which the serviceability f any semicnductr device may be impaired. NOTES: ) These rating are based n a maximum junctin temperature f 5 degrees. 2) These are steady limits. The factry shuld be cnsulted n applicatins invlving pulsed r lw duty cycle peratins. Thermal haracteristics T a = 25 unless therwise nted Symbl Parameter Max. PN2222 *MMBT2222 **PZT2222 Units P D Ttal Device Dissipatin Derate abve , 8. mw mw/ R θj Thermal Resistance, Junctin t ase 83.3 /W R θj Thermal Resistance, Junctin t mbient /W * Device munted n FR-4 PB ** Device munted n FR-4 PB 36mm 8mm.5mm; munting pad fr the cllectr lead min. 6cm Fairchild Semicnductr rpratin PN2222/MMBT2222/PZT2222 Rev...

2 Electrical haracteristics T a = 25 unless therwise nted Symbl Parameter Test nditin Min. Max. Units Off haracteristics B (BR)EO llectr-emitter Breakdwn ltage * I = m, I B = 4 B (BR)BO llectr-base Breakdwn ltage I = μ, I E = 75 B (BR)EBO Emitter-Base Breakdwn ltage I E = μ, I = 6. I EX llectr utff urrent E = 6, EB(ff) = 3. n I BO llectr utff urrent B = 6, I E = B = 6, I E =, T a = 25 I EBO Emitter utff urrent EB = 3., I = n I BL Base utff urrent E = 6, EB(ff) = 3. 2 n On haracteristics h FE D urrent Gain I =.m, E = I =.m, E = I = m, E = I = m, E =, T a = -55 I = 5m, E = * I = 5m, E = * I = 5m, E = * E(sat) llectr-emitter Saturatin ltage * I = 5m, E = I = 5m, E = BE(sat) Base-Emitter Saturatin ltage * I = 5m, E = I = 5m, E = Small Signal haracteristics f T urrent Gain Bandwidth Prduct I = 2m, E = 2, f = MHz 3 MHz b Output apacitance B =, I E =, f = MHz 8. pf μ μ PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier ib Input apacitance EB =.5, I =, f = MHz 25 pf rb c llectr Base Time nstant I = 2m, B = 2, f = 3.8MHz 5 ps NF Nise Figure I = μ, E =, R S =.KΩ, f =.KHz 4. db Re( ) Real Part f mmn-emitter High Frequency Input Impedance I = 2m, E = 2, f = 3MHz 6 Ω Switching haracteristics t d Delay Time = 3, EB(ff) =.5, ns t r Rise Time I = 5m, I B = 5m 25 ns t s Strage Time = 3, I = 5m, 225 ns t f Fall Time I B = I B2 = 5m 6 ns * Pulse Test: Pulse Width 3μs, Duty ycle 2.% 27 Fairchild Semicnductr rpratin PN2222/MMBT2222/PZT2222 Rev... 2

3 Typical haracteristics h - TYPIL PULSED URRENT GIN FE - BSE-EMITTER OLTGE () BEST Typical Pulsed urrent Gain I - OLLETOR URRENT (m) = 5 E Figure. Typical Pulsed urrent Gain Base-Emitter Saturatin ltage β = - 4 캜 25 캜 25 캜 5 I I - OLLETOR URRENT (m) - OLLETOR-EMITTER OLTGE () EST - BSE-EMITTER ON OLTGE () BE (ON) llectr-emitter Saturatin ltage β = 25 캜 5 I - OLLETOR URRENT (m) 25 캜 - 4 캜 Figure 2. llectr-emitter Saturatin ltage Base-Emitter ON ltage vs llectr urrent E = I I - OLLETOR URRENT (m) PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier I - OLLETOR URRENT (n) BO 5. Figure 3. Base-Emitter Saturatin ltage llectr-utff urrent vs mbient Temperature = 4 B T - MBIENT TEMPERTURE ( ) Figure 5. llectr utff urrent vs mbient Temperature PITNE (pf) Figure 4. Base-Emitter On ltage Emitter Transitin and Output apacitance vs Reverse Bias ltage b te f = MHz. REERSE BIS OLTGE () Figure 6. Emitter Transitin and Output apacitance vs Reverse Bias ltage 27 Fairchild Semicnductr rpratin PN2222/MMBT2222/PZT2222 Rev... 3

4 Typical haracteristics TIME (ns) P - POWER DISSIPTION (W) D Turn On and Turn Off Times I c I B= I B2= cc = 25 t n I I - OLLETOR URRENT (m) Figure. Turn On and Turn Off Times TO-92 SOT-23 Pwer Dissipatin vs mbient Temperature SOT-223 t ff TEMPERTURE ( ) TIME (ns) HR. RELTIE TO LUES T I = m Switching Times I c I B= I B2= cc = 25 t r t s 8 t f t d I I - OLLETOR URRENT (m) Figure 2. Switching Times mmn Emitter haracteristics 8 E = T = I - OLLETOR URRENT (m) h e h fe PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier Figure 3. Pwer Dissipatin vs mbient Temperature Figure 4. mmn Emitter haracteristics HR. RELTIE TO LUES T T = mmn Emitter haracteristics E = I = m T - MBIENT TEMPERTURE ( ) Figure 5. mmn Emitter haracteristics hfe h e HR. RELTIE TO LUES T = E mmn Emitter haracteristics OLLETOR OLTGE () E I = m T = 25 h fe h e Figure 6. mmn Emitter haracteristics 27 Fairchild Semicnductr rpratin PN2222/MMBT2222/PZT2222 Rev... 4

5 TRDEMRKS The fllwing are registered and unregistered trademarks and service marks Fairchild Semicnductr wns r is authrized t use and is nt intended t be an exhaustive list f all such trademarks. Ex Build it Nw replus ROSSOLT TL urrent Transfer Lgic EcSPRK Fairchild Fairchild Semicnductr FT Quiet Series FT FST Fastvre FPS FRFET Glbal Pwer Resurce SM Green FPS Green FPS e-series GTO i-l IntelliMX ISOPLNR MegaBuck MIROOUPLER MicrFET MicrPak MillerDrive Mtin-SPM OPTOLOGI OPTOPLNR PDP-SPM Pwer22 Pwer247 POWEREDGE Pwer-SPM PwerTrench Prgrammable ctive Drp QFET QS QT Optelectrnics Quiet Series Rapidnfigure SMRT STRT SPM STELTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET The Pwer Franchise TinyBst TinyBuck TinyLgic TINYOPTO TinyPwer TinyPWM TinyWire µserdes UH UniFET X DISLIMER FIRHILD SEMIONDUTOR RESERES THE RIGHT TO MKE HNGES WITHOUT FURTHER NOTIE TO NY PRODUTS HEREIN TO IMPROE RELIBILITY, FUNTION, OR DESIGN. FIRHILD DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLITION OR USE OF NY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONEY NY LIENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPEIFITIONS DO NOT EXPND THE TERMS OF FIRHILD S WORLDWIDE TERMS ND ONDITIONS, SPEIFILLY THE WRRNTY THEREIN, WHIH OERS THESE PRODUTS. PN2222/MMBT2222/PZT2222 NPN General Purpse mplifier LIFE SUPPORT POLIY FIRHILD S PRODUTS RE NOT UTHORIZED FOR USE S RITIL OMPONENTS IN LIFE SUPPORT DEIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN PPROL OF FIRHILD SEMIONDUTOR ORPORTION. s used herein:. Life supprt devices r systems are devices r systems which, (a) are intended fr surgical implant int the bdy, r (b) supprt r sustain life, and (c) whse failure t perfrm when prperly used in accrdance with instructins fr use prvided in the labeling, can be reasnably expected t result in significant injury t the user. 2. critical cmpnent is any cmpnent f a life supprt device r system whse failure t perfrm can be reasnably expected t cause the failure f the life supprt device r system, r t affect its safety r effectiveness. PRODUT STTUS DEFINITIONS Definitin f Terms Datasheet Identificatin Prduct Status Definitin dvance Infrmatin Preliminary N Identificatin Needed Obslete Frmative r In Design First Prductin Full Prductin Nt In Prductin This datasheet cntains the design specificatins fr prduct develpment. Specificatins may change in any manner withut ntice. This datasheet cntains preliminary data; supplementary data will be published at a later date. Fairchild Semicnductr reserves the right t make changes at any time withut ntice t imprve design. This datasheet cntains final specificatins. Fairchild Semicnductr reserves the right t make changes at any time withut ntice t imprve design. This datasheet cntains specificatins n a prduct that has been discntinued by Fairchild semicnductr. The datasheet is printed fr reference infrmatin nly. 27 Fairchild Semicnductr rpratin PN2222/MMBT2222/PZT2222 Rev... 5 Rev. I3

参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum