TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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1 BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process 78. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 6 V V BO ollector-base Voltage 6 V V EBO Emitter-Base Voltage 5. V I ollector urrent - ontinuous 1.2 A T J, T stg Operating and Storage Junction Temperature Range -55 to *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 15 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units BP52 P D Total Device Dissipation Derate above W mw/ R θja Thermal Resistance, Junction to Ambient 83.3 /W 1997 Fairchild Semiconductor orporation
2 Electrical haracteristics TA = 25 unless otherwise noted PNP General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units BP52 OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage I = 1 ma, I B = 6 V V (BR)BO ollector-base Breakdown Voltage I = 1 µa, I E = 6 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 1 µa, I = 5. V I BO ollector-utoff urrent V B = 3 V, I E = 1 na V B = 3 V, I E =, T A = µa I EBO Emitter-utoff urrent V EB = 5. V, I = 1 µa ON HARATERISTIS h FE D urrent Gain I = 5. ma, V E = 2. V I = 15 ma, V E = 2. V I = 5 ma, V E = 2. V V E(sat) ollector-emitter Saturation Voltage I = 5 ma, I B = 5 ma.5 V V BE(on) Base-Emitter On Voltage I = 5 ma, V E = 2. V 1. V NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent I - OLLETOR URRENT (A) V E = 5V V - OLLETOR-EMITTER VOLTAGE (V) ESAT ollector-emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (A)
3 PNP General Purpose Amplifier (continued) BP52 Typical haracteristics (continued) V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = I - OLLETOR URRENT (ma) V - BASE-EMITTER ON VOLTAGE (V) BE(O N) Base-Emitter ON Voltage vs ollector urrent I - OLLETOR URRENT (ma) V E = 5V I - OLLETOR URRENT (na) BO ollector-utoff urrent vs Ambient Temperature V B= 4V T A - AMBIENT TEMPERATURE ( ) - OLLETOR-BASE APAITANE (pf) obo ollector-base apacitance vs ollector-base Voltage f = 1. MHz V B - OLLETOR-BASE VOLTAGE (V) 3 h - GAIN BANDWIDTH PRODUT (MHz) FE Gain Bandwidth Product vs ollector urrent V E = 1V I - OLLETOR URRENT (ma) P - POWER DISSIPATION (W) D Power Dissipation vs Ambient Temperature SOT o TEMPERATURE ( )
4 SOT-223 Tape and Reel Data SOT-223 Packaging onfiguration: Figure 1. ustomized Label F63TNR Label Antistatic over Tape Static Dissipative Embossed arrier Tape Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,5 units per 13" or 33cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 5 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F F F F SOT-223 Packaging Information Packaging Option Standard (no flow code) D84Z Packaging type TNR TNR Qty per Reel/Tube/Bag 2,5 5 Reel Size 13" Dia 7" Dia Box Dimension (mm) 343x64x x187x47 Max qty per Box 5, 1, Weight per unit (gm) Weight per Reel (kg) Note/omments 343mm x 342mm x 64mm Intermediate box for Standard SOT-223 Unit Orientation F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option F63TNR Label F63TNR Label sample LOT: BVK741B19 QTY: 3 SOT-223 Tape Leader and Trailer onfiguration: Figure 2. FSID: PN2222A SPE: D/1: D9842 QTY1: SPE REV: D/2: QTY2: PN: N/F: F (F63TNR)3 arrier Tape over Tape Trailer Tape 3mm minimum or 38 empty pockets omponents Leader Tape 5mm minimum or 62 empty pockets 2 Fairchild Semiconductor International September 1999, Rev. B
5 SOT-223 Tape and Reel Data, continued SOT-223 Embossed arrier Tape onfiguration: Figure 3. T P D E1 F K Wc B E2 W Tc A P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type A B W D D1 E1 E2 F P1 P K T Wc Tc SOT-223 (12mm) / / / / / / min 5.5 +/ / / / / / /-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and ). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional View) omponent Rotation SOT-223 Reel onfiguration: Figure 4. A Sketch B (Top View) omponent Rotation Typical component center line Sketch (Top View) omponent lateral movement W1 Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 12mm 7" Dia / / / / mm 13" Dia / / / / July 1999, Rev. B
6 SOT-223 Package Dimensions SOT-223 (FS PKG ode 47) 1 : 1 Scale 1:1 on letter size paper Part Weight per unit (gram): Fairchild Semiconductor International September 1999, Rev.
7 SOT-223 Package Dimensions SOT-223 (FS PKG ode 47) 1 : 1 Scale 1:1 on letter size paper Part Weight per unit (gram): Fairchild Semiconductor International September 1999, Rev.
8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DOME E 2 MOS TM EnSigna TM FAT FAT Quiet Series FAST DISLAIMER LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSe ISOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UH VX FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
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2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
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TN6717A NZT6717 TN6717A / NZT6717 B E TO-226 SOT-223 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationTYPE NPN PNP. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
E B E B E B E B 4 3 3 4 2 1 2 1 C C C C C C C C 4 2 3 3 4 2 1 1 SOIC-16 TRANSISTOR OR TYPE C 1 B 1 E 1 & C 2 B 2 E 2 C 3 B 3 E 3 & C 4 B 4 E 4 NPN PNP Quad NPN & PNP General Purpose Amplifier These complimentary
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More informationFMB3906. pin #1. SuperSOT -6 Mark:.2A Dot denotes pin #1 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units
S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of
More informationE C E B. TO-92 SOT-23 Mark: 3D. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
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B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark:
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
More informationSOT-23 Mark: 2A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E 2N3906 TO-92 MMBT3906 SOT-23 Mark: 2A B E PZT3906 B SOT-223 E 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications
More informationSuperSOT-3 Mark: 3SS. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E MPSA28 TO-92 MMBTA28 C SuperSOT-3 Mark: 3SS B E PZTA28 C C B SOT-223 E MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor This device is designed for applications requiring extremely high current
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C B E PN2 PN2A TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 3 ma. Sourced from Process 68. MMBT2 MMBT2A C SOT-23 Mark:
More information2N5210/MMBT5210 B E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N5/MMBT5 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. N5/MMBT5 BE TO-9 B E OT- Mark: M Absolute Maximum Ratings* TA =
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/A NPN Low Saturation Transistor Features These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A =25 unless
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
More informationE C B E. TO-92 SOT-23 Mark: 2T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N443 MMBT443 C 2N443 / MMBT443 E C B E TO-92 SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E 2N5088 2N5089 TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 50 ma. MMBT5088 MMBT5089
More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 C 2N441 / MMBT441 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5
More informationTO-92 SOT-23 Mark: 3R. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N5771 MMBT5771 C 2N5771 / MMBT5771 C B E TO-92 SOT-23 Mark: 3R B E PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 ma. Sourced from
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J201 J202 TO-92 N-Channel General Purpose Amplifier MMBFJ201 MMBFJ202 G SOT-23 Mark: 62P / 62Q D S NOTE: Source & Drain are interchangeable J201 / J202 / MMBFJ201 / MMBFJ202 This device is designed
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PN3563 PN3563 C B E TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 ma to 30 ma range. Sourced from Process 43. See
More informationFeatures. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. TA=25 o C unless otherwise noted
FDS776A N-Channel Logic Level PowerTrench MOSFET December 2 PRELIMINARY FDS776A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
More informationTO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
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C B E MPSA42 TO-92 MMBTA42 C SOT-23 Mark: 1D B E PZTA42 C C B SOT-223 E MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT
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C B E MPSA42 TO-92 MMBTA42 C SOT-23 Mark: 1D B E PZTA42 C C B SOT-223 E MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT
More informationFeatures. 15 A, 30 V. R DS(ON) = 5.5 V GS = 10 V R DS(ON) = 8 V GS = 4.5 V. TA=25 o C unless otherwise noted
FDS776A N-Channel Logic Level PowerTrench MOSFET February 2 PRELIMINARY FDS776A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
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G S D J309 J310 TO-92 N-Channel RF Amplifier MMBFJ309 MMBFJ310 G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable J309 / J310 / MMBFJ309 / MMBFJ310 This device is designed for VHF/UHF
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2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum
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SB3 - SB30 SB3-SB30 Features 3.0 ampere operation at T A = 75 C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-AD COLOR
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