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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 NPN General Purpose Amplifier 2N520/MMBT520 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 50 ma. 2N520/MMBT520 BE TO-92 B E SOT-2 Mark: M Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 50 V V BO ollector-base Voltage 50 V V EBO Emitter-Base Voltage 4.5 V I ollector urrent - ontinuous 00 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +50 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 50 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max. Units 2N520 MMBT520 P D Total Device Dissipation mw Derate above mw/ R θj Thermal Resistance, Junction to ase 8. /W R θja Thermal Resistance, Junction to Ambient /W 2002 Fairchild Semiconductor orporation 2N520, Rev B

3 Electrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted NPN General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units V (BR)EO ollector-emitter Breakdown Voltage I =.0 ma, I B = 0 50 V V (BR)BO ollector-base Breakdown Voltage I = 0. ma, I E = 0 50 V I BO ollector utoff urrent V B = 5 V, I E = 0 50 na I EBO Emitter utoff urrent V EB =.0 V, I = 0 50 na 2N520/MMBT520 ON HARATERISTIS h FE D urrent Gain I = 00 µa, V E = 5.0 V I =.0 ma, V E = 5.0 V I = 0 ma, V E = 5.0 V* V E(sat) ollector-emitter Saturation Voltage I = 0 ma, I B =.0 ma 0.7 V V BE(on) Base-Emitter On Voltage I =.0 ma, V E = 5.0 V 0.85 V 600 SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = 500 µa,v E = 5.0 V, f= 20 MHz 0 MHz cb ollector-base apacitance V B = 5.0 V, I E = 0, f = 00 khz 4.0 pf Small-Signal urrent Gain I =.0 ma, V E = 5.0 V, f =.0 khz NF Noise Figure I = 20 µa, V E = 5.0 V, R S = 22 kω, f = 0 Hz to 5.7 khz I = 20 µa, V E = 5.0 V, R S = 0 kω, f =.0 khz db db *Pulse Test: Pulse Width 00 µs, Duty ycle 2.0%

4 Typical haracteristics h FE - TYPIAL PULSED URRENT GAIN Typical Pulsed urrent Gain vs ollector urrent 25 o 25 o - 40 o I - OLLETOR URRENT (ma) V E = 5.0V V BEON - BASE-EMITTER ON VOLTAGE (V) NPN General Purpose Amplifier (continued) ollector-emitter Saturation Voltage vs ollector urrent β = 0 25 o 25 o I - OLLETOR URRENT (ma) - 40 o 2N520/MMBT520 V BESAT - OLLETOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs ollector urrent - 40 o 25 o 25 o I - OLLETOR URRENT (ma) β = 0 V BEON - BASE-EMITTER ON VOLTAGE (V) Base-Emitter ON Voltage vs ollector urrent - 40 o 25 o 25 o 0. 0 I - OLLETOR URRENT (ma) V E = 5.0V I - OLLETOR URRENT (na) BO 0 ollector-utoff urrent vs Ambient Temperature V = 45V B T A- AMBIENT TEMPERATURE ( )

5 Typical haracteristics (continued) APAITANE (pf) te Input and Output apacitance vs Reverse Bias Voltage f =.0 MHz ob REVERSE BIAS VOLTAGE (V) V - OLLETOR VOLTAGE (V) E NPN General Purpose Amplifier (continued) ontours of onstant Gain Bandwidth Product (f T ) I - OLLETOR URRENT (ma) 75 MHz 50 MHz 25 MHz 00 MHz 75 MHz 2N520/MMBT520 HARATERISTIS RELATIVE TO VALUE AT T = 25 A Normalized ollector-utoff urrent vs Ambient Temperature T A - AMBIENT TEMPERATURE ( ) NF - NOISE FIGURE (db) Wideband Noise Frequency vs Source Resistance V E = 5.0 V BANDWIDTH = 5.7 khz I = 00 µa I = 0 µa I = 0 µa 0,000 2,000 5,000 0,000 20,000 50,000 00,000 R S - SOURE RESISTANE ( Ω ) NF - NOISE FIGURE (db) Noise Figure vs Frequency I = 200 µa, R S = 0 kω I = 00 µa, R S = 0 kω I =.0 ma, R S = 500 Ω I =.0 ma, R S= 5.0 kω V = 5.0V E f - FREQUENY (MHz) P D - POWER DISSIPATION (W) Base-Emitter Saturation Voltage vs ollector urrent TO-92 SOT TEMPERATURE ( o )

6 Typical haracteristics (continued) R - SOURE RESISTANE ( Ω ) S 0,000 5,000 2,000,000 ontours of onstant Narrow Band Noise Figure 500 V E = 5.0 V f = 00 Hz 200 BANDWIDTH = 20 Hz.0 db 4.0 db 6.0 db 8.0 db 0 db 2 db 4 db ,000 I - OLLETOR URRENT ( µ A) R - SOURE RESISTANE ( Ω ) S 0,000 5,000 2,000,000 NPN General Purpose Amplifier (continued) ontours of onstant Narrow Band Noise Figure 500 V E = 5.0 V f =.0 khz BANDWIDTH 200 = 200 Hz 2.0 db.0 db 4.0 db 6.0 db 8.0 db ,000 I - OLLETOR URRENT ( µ A) 2N520/MMBT520 R - SOURE RESISTANE ( Ω ) S ontours of onstant Narrow Band Noise Figure.0 db 2.0 db.0 db 4.0 db 500 V E = 5.0V f = 0kHz 200 BANDWIDTH = 2.0kHz I - OLLETOR URRENT ( µ A) 6.0 db 8.0 db R - SOURE RESISTANE ( Ω ) S ontours of onstant Narrow Band Noise Figure 8.0 db 2.0 db.0 db 500 V E = 5.0V f =.0 MHz 200 BANDWIDTH = 200kHz I - OLLETOR URRENT ( µ A) 4.0 db 7.0 db 5.0 db 6.0 db

7 Typical ommon Emitter haracteristics (f =.0 khz) HARATERISTIS RELATIVE TO VALUE(V =5V) E Typical ommon Emitter haracteristics h re h ie I =.0mA 0.9 f =.0kHz T A = V - OLLETOR VOLTAGE (V) E h ie h re HARATE RI STIS RE LATIV E TO VALUE (T =25 ) A NPN General Purpose Amplifier (continued) Typical ommon Emitter haracteristics V E = 5.0V f =.0kHz I =.0mA h re h ie T J - JUNTION TEMPERATURE ( ) h ie h re 2N520/MMBT520 HARATERISTIS RELATIVE TO VALUE(I =ma) Typical ommon Emitter haracteristics f =.0kHz h ie and h re h re h ie I - OLLETOR URRENT (ma)

8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROSSVOLT DenseTrench DOME EcoSPARK E 2 MOS TM EnSigna TM FAT FAT Quiet Series STAR*POWER is used under license DISLAIMER FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSe ISOPLANAR LittleFET MicroFET MicroPak MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITHER SMART START STAR*POWER Stealth SuperSOT - SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UH UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4

9 ON Semiconductor and are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor 952 E. 2nd Pkwy, Aurora, olorado 800 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com Semiconductor omponents Industries, LL N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

10 Mouser Electronics Authorized Distributor lick to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: 2N520_D8Z 2N520NMBU 2N520 2N520_D26Z 2N520_D75Z 2N520TAR 2N520TFR 2N520_S00Z 2N520_J05Z 2N520BU 2N520TA 2N520TF 2N520TFR_Q 2N520TAR_Q

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba

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