General Purpose Transistors

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Leona Ford
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1 General Purpose ransistors PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323/ S 7 which is designed for low power surface mount applications. BASE 3 OLLEOR B856AW, BW B857AW, BW B858AW, BW W 2 EMIER 3 MAXIMUM RAINGS Rating Symbol B856 B857 B858 Unit ollector Emitter oltage EO ollector Base oltage BO ASE 49 2, SYLE 3 SO 323 / S-7 Emitter Base oltage EBO ollector urrent ontinuous I madc HERMAL HARAERISIS haracteristic Symbol Max Unit otal Device Dissipation FR 5 Board, () P D 5 mw A = 25 hermal Resistance, Junction to Ambient R θja 833 /W Junction and Storage emperature J, stg 55 to +5 DEIE MARKING B856AW = 3A; B856BW = 3B; B857AW = 3E; B857BW = 3F; B858AW = 3J; B858BW = 3K; B858W = 3L ELERIAL HARAERISIS ( A = 25 unless otherwise noted.) haracteristic Symbol Min yp Max Unit OFF HARAERISIS ollector Emitter Breakdown oltage B856 Series 65 (I = ma) B857 Series (BR)EO 45 v ollector Emitter Breakdown oltage B856 Series 8 (I = µa, EB = ) B857 Series (BR)ES 5 v ollector Base Breakdown oltage B856 Series 8 (I = µa) B857 Series (BR)BO 5 v Emitter Base Breakdown oltage B856 Series 5. (I E =. µa) B857 Series, (BR)EBO 5. v B858 Series 5. ollector utoff urrent ( B = 3 ) I BO 5 na ( B = 3, A = 5 ) 4. µa.fr 5=. x.75 x.62in K5 /5

2 B856AW, BW B857AW, BW B858AW, BW, W ELERIAL HARAERISIS ( A = 25 unless otherwise noted) (ontinued) haracteristic Symbol Min yp Max Unit ON HARAERISIS D urrent Gain B856A, B857A, B858A h FE 9 (I = µa, E = 5. ) B856B, B857B, B858B 5 B858, 27 (I = ma, E = 5. ) B856A, B857A, B858A B856B, B857B, B858B B ollector Emitter Saturation oltage (I = ma, I B = ma).3 E(sat) ollector Emitter Saturation oltage (I = ma, I B = 5. ma).65 Base Emitter Saturation oltage (I = ma, I B = ma).7 BE(sat) Base Emitter Saturation oltage (I = ma, I B = 5. ma).9 Base Emitter oltage (I = ma, E = 5. ).6.75 BE(on) Base Emitter oltage (I = ma, E = 5. ).82 SMALL SIGNAL HARAERISIS urrent Gain Bandwidth Product f MHz (I = ma, E = 5. dc, f = MHz) Output apacitance ( B =, f =. MHz) ob 4.5 pf Noise Figure (I = ma, E= 5. dc, R S= kω, f =. khz, BW= 2 Hz) NF db K5 2/5

3 B856AW, BW B857AW, BW, B858AW, BW, W B857/B858. h FE, NORMALIZED D URREN GAIN E = A, OLAGE (OLS) I /I = BE(sat) = BE(on) I /I = E(sat) B Figure. Normalized D urrent Gain Figure 2. Saturation and On oltages E, OLLEOR EMIER OLAGE ().6.2 I = ma I = 2 ma I = 5 ma A = 25 I = 2 ma I = ma θ B, EMPERAURE OEFFIIEN (m/ ) to I, BASE URREN (ma) B Figure 3. ollector Saturation Region I, OLLEOR URREN (ma) Figure 4. Base Emitter emperature oefficient. 4, APAIANE(pF) ib ob. =25 A 2 = E f, URREN GAIN BANDWIDH PRODU (MHz) A = , REERSE OLAGE (OLS) R Figure 5. apacitances Figure 6. urrent Gain Bandwidth Product K5 3/5

4 B856AW, BW B857AW, BW, B858AW, BW, W B856 h FE, D URREN GAIN (NORMALIZED), OLLEOR EMIER OLAGE (OLS) E..6.2 = 5. E A I = ma I, OLLEOR URREN (ma) Figure 7. D urrent Gain 2mA ma I, BASE URREN (ma) B Figure 9. ollector Saturation Region 2mA J = θ B, EMPERAURE OEFFIIEN (m/ ), OLAGE (OLS) J = 25 I /I B = E = 5. I /I B = mA I, OLLEOR URREN (ma) Figure 8. On oltage θ B for BE 55 to I, OLLEOR URREN (ma) Figure. Base Emitter emperature oefficient, APAIANE (pf) 4 J 2 ib ob f, URREN GAIN BANDWIDH PRODU E = , REERSE OLAGE (OLS) R Figure. apacitance I, OLLEOR URREN (ma) Figure 2. urrent Gain Bandwidth Product K5 4/5

B856AW, BW B857AW, BW, B858AW, BW, W I, OLLEOR URREN (ma) r( t), RANSIEN HERMAL RESISANE (NORMALIZED)..7.3..7.5 SINGLE PULSE SINGLE PULSE A = 25 J = 25 B558 B557 B556 BONDING WIRE LIMI HERMAL LIMI SEOND BREAKDOWN LIMI E, OLLEOR EMIER OLAGE () Figure 4.

5 B856AW, BW B857AW, BW, B858AW, BW, W I, OLLEOR URREN (ma) r( t), RANSIEN HERMAL RESISANE (NORMALIZED) SINGLE PULSE SINGLE PULSE A = 25 J = 25 B558 B557 B556 BONDING WIRE LIMI HERMAL LIMI SEOND BREAKDOWN LIMI E, OLLEOR EMIER OLAGE () Figure 4. Active Region Safe Operating Area s P (pk) t, IME (ms) t t 2 Figure 3. hermal Response 3 ms Z θj (t) = r(t) R θj R θj = 83.3 /W MAX Z θja (t) = r(t) R θja R θja = 2 /W MAX D URES APPLY FOR POWER PULSE RAIN SHOWN READ IME A t J(pk) = P (pk) R θj (t).3.2 DUY YLE, D = t /t k k 5.k k D= he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 4 is based upon = 5 ; or J(pk) A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided < 5. may be calculated from the data in Figure 3. At high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. K5 5/5

General Purpose Transistors

General Purpose Transistors PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for