IRFP A, 500V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

Transcription

1 IRFP46 Data heet January A, 5V,.7 Ohm, N-Channel Power MOFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA7465. Ordering Information PART NUMBER PACKAE BRAND IRFP46 TO-47 IRFP46 NOTE: When ordering, use the entire part number. Features A, 5V r D(ON) =.7Ω ingle Pulse Avalanche Energy Rated OA is Power Dissipation Limited Nanosecond witching peeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 uidelines for oldering urface Mount Components to PC Boards ymbol D Packaging JEDEC TYLE TO-47 OURCE DRAIN ATE DRAIN (TAB) Fairchild emiconductor Corporation IRFP46 Rev. B

2 IRFP46 Absolute Maximum Ratings T C = 5 o C, Unless Otherwise pecified IRFP46 UNIT Drain to ource Voltage (Note ) V Drain to ate Voltage (R = kω) (Note ) V DR 5 V Continuous Drain Current I D T C = o C I D A A Pulsed Drain Current (Note 3) I DM A ate to ource Voltage ± V Maximum Power Dissipation P D 5 W Linear Derating Factor W/ o C ingle Pulse Avalanche Energy Rating (Note 4) E A 96 mj Operating and torage Temperature T J, T T -55 to 5 o C Maximum Temperature for oldering Leads at.63in (.6mm) from Case for s T L 3 Package Body for s, ee Techbrief T pkg 6 o C o C CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 5 o C to T J = 5 o C. Electrical pecifications T C = 5 o C, Unless Otherwise pecified PARAMETER YMBOL TET CONDITION MIN TYP MAX UNIT Drain to ource Breakdown Voltage B I D = 5µA, = V (Figure ) V ate Threshold Voltage (TH) =, I D = 5µA - 4 V Zero ate Voltage Drain Current I D = Rated B, = V µa =. x Rated B, = V, T J = 5 o C µa On-tate Drain Current (Note ) I D(ON) > I D(ON) x r D(ON)MAX, = V - - A ate to ource Leakage Current I = ±V - - ± na Drain to ource On Resistance (Note ) r D(ON) I D = A, = V (Figures, 9) Ω Forward Transconductance (Note ) g fs 5V, I D > A (Figure ) Turn-On Delay Time t d(on) = 5V, I D = A, R = 4.3Ω, R D = Ω, ns Rise Time t r = V MOFET witching Times are Essentially Independent of Operating Temperature - ns Turn-Off Delay Time t d(off) ns Fall Time t f ns Total ate Charge (ate to ource + ate-drain) Q g(tot) = V, I D = A, =. x Rated B, I (REF) =.5mA (Figure 4). ate Charge is Essentially Independent of OperatingTemperature - 9 nc ate to ource Charge Q gs - - nc ate to Drain Miller Charge Q gd nc Input Capacitance C I = 5V, = V, f = MHz (Figure ) pf Output Capacitance C O pf Reverse Transfer Capacitance C R pf Internal Drain Inductance L D Measured from the Drain Lead, 6mm (.5in) from Package to Center of Die Internal ource Inductance L Measured from the ource Lead, 6mm (.5in) from Header to ource Bonding Pad Modified MOFET ymbol howing the Internal Device Inductances D nh nh Thermal Resistance Junction to Case R θjc o C/W Thermal Resistance Junction to Ambient R θja Free Air Operation o C/W L D L Fairchild emiconductor Corporation IRFP46 Rev. B

3 IRFP46 ource to Drain Diode pecifications PARAMETER YMBOL TET CONDITION MIN TYP MAX UNIT Continuous ource to Drain Current I D Modified MOFET D - - A Pulse ource to Drain Current I ymbol howing the DM - - A (Note 3) Integral Reverse P-N Junction Rectifier ource to Drain Diode Voltage (Note ) V D T J = 5 o C, I D = A, = V (Figure 3) - -. V Reverse Recovery Time t rr T J = 5 o C, I D = A, di D /dt = A/µs 5 ns Reverse Recovery Charge Q RR T J = 5 o C, I D = A, di D /dt = A/µs 3.. µc NOTE:. Pulse test: pulse width 3µs, duty cycle %. 3. Repetitive rating: pulse width limited by Max junction temperature. ee Transient Thermal Impedance curve (Figure 3). 4. = 5V, starting T J = 5 o C, L = 4.3mH, R = 5Ω, Peak I A = A. Typical Performance Curves Unless Otherwise pecified. POWER DIIPATION MULTIPLIER T C, CAE TEMPERATURE ( o C) T C, CAE TEMPERATURE ( o C) 5 FIURE. NORMALIZED POWER DIIPATION vs CAE TEMPERATURE FIURE. MAXIMUM CONTINUOU DRAIN CURRENT vs CAE TEMPERATURE Z θjc, THERMAL IMPEDANCE ( o C/W) INLE PULE P DM t t NOTE: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C t, RECTANULAR PULE DURATION () FIURE 3. MAXIMUM TRANIENT THERMAL IMPEDANCE Fairchild emiconductor Corporation IRFP46 Rev. B

4 IRFP46 Typical Performance Curves Unless Otherwise pecified (Continued) 3 5 OPERATION IN THI AREA I LIMITED BY r D(ON) 5 µs µs 5 ms ms 5 T C = 5 o C DC T J = MAX RATED INLE PULE , DRAIN TO OURCE VOLTAE (V) = V = 6.V PULE DURATION = µs DUTY CYCLE =.5% MAX = 5.5V = 5.V = 4.5V = 4.V 5 5, DRAIN TO OURCE VOLTAE (V) 5 FIURE 4. FORWARD BIA AFE OPERATIN AREA FIURE 5. OUTPUT CHARACTERITIC PULE DURATION = µs DUTY CYCLE =.5% MAX = V = 6.V = 5.5V = 5.V = 4.5V I D, DRAIN CURRENT(A). PULE DURATION = µs DUTY CYCLE =.5% MAX 5V T J = 5 o C T J = 5 o C = 4.V 4, DRAIN TO OURCE VOLTAE (V) - 4 6, ATE TO OURCE VOLTAE (V) FIURE 6. ATURATION CHARACTERITIC FIURE 7. TRANFER CHARACTERITIC r D(ON), DRAIN TO OURCE ON REITANCE (Ω) PULE DURATION = µs DUTY CYCLE =.5% MAX = V = V NORMALIZED DRAIN TO OURCE ON REITANCE PULE DURATION = µs DUTY CYCLE =.5% MAX = V, I D = A T J, JUNCTION TEMPERATURE ( o C) FIURE. DRAIN TO OURCE ON REITANCE vs ATE VOLTAE AND DRAIN CURRENT FIURE 9. NORMALIZED DRAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE Fairchild emiconductor Corporation IRFP46 Rev. B

5 IRFP46 Typical Performance Curves Unless Otherwise pecified (Continued) NORMALIZED DRAIN TO OURCE BREAKDOWN VOLTAE I D = 5µA C, CAPACITANCE (pf) 6 4 C I C O C R = V, f = MHz C I = C + C D C R = C D C O C D + C D T J, JUNCTION TEMPERATURE ( o C) 5 5, DRAIN TO OURCE VOLTAE (V) FIURE. NORMALIZED DRAIN TO OURCE BREAKDOWN VOLTAE vs JUNCTION TEMPERATURE FIURE. CAPACITANCE vs DRAIN TO OURCE VOLTAE g fs, TRANCONDUCTANCE () PULE DURATION = µs DUTY CYCLE =.5% MAX 5V T J = 5 o C T J = 5 o C I D, OURCE TO DRAIN CURRENT (A) PULE DURATION = µs DUTY CYCLE =.5% MAX T J = 5 o C T J = 5 o C V D, OURCE TO DRAIN VOLTAE (V) FIURE. TRANCONDUCTANCE vs DRAIN CURRENT FIURE 3. OURCE TO DRAIN DIODE VOLTAE I D = A, ATE TO OURCE (V) 4 = 4V = 5V = V 4 Q g, ATE CHARE (nc) FIURE 4. ATE TO OURCE VOLTAE vs ATE CHARE Fairchild emiconductor Corporation IRFP46 Rev. B

6 IRFP46 Test Circuits and Waveforms B L t P VARY t P TO OBTAIN REQUIRED PEAK I A R + - I A DUT V t P I A.Ω t AV FIURE 5. UNCLAMPED ENERY TET CIRCUIT FIURE. UNCLAMPED ENERY WAVEFORM t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R - % % DUT 9% % 5% PULE WIDTH 5% FIURE 7. WITCHIN TIME TET CIRCUIT FIURE. REITIVE WITCHIN WAVEFORM CURRENT REULATOR (IOLATED UPPLY) V BATTERY.µF 5kΩ.3µF AME TYPE A DUT Q gs Q gd Q g(tot) D DUT I (REF) I CURRENT AMPLIN REITOR I D CURRENT AMPLIN REITOR I (REF) FIURE 9. ATE CHARE TET CIRCUIT FIURE. ATE CHARE WAVEFORM Fairchild emiconductor Corporation IRFP46 Rev. B

7 TRADEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROVOLT DenseTrench DOME EcoPARK E CMO TM Enigna TM FACT FACT Quiet eries TAR*POWER is used under license DICLAIMER FAIRCHILD EMICONDUCTOR REERVE THE RIHT TO MAKE CHANE WITHOUT FURTHER NOTICE TO ANY PRODUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DEIN. FAIRCHILD DOE NOT AUME ANY LIABILITY ARIIN OUT OF THE APPLICATION OR UE OF ANY PRODUCT OR CIRCUIT DECRIBED HEREIN; NEITHER DOE IT CONVEY ANY LICENE UNDER IT PATENT RIHT, NOR THE RIHT OF OTHER. LIFE UPPORT POLICY FAIRCHILD PRODUCT ARE NOT AUTHORIZED FOR UE A CRITICAL COMPONENT IN LIFE UPPORT DEVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHILD EMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT TATU DEFINITION Definition of Terms FAT FATr FRFET lobaloptoisolator TO HieC IOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOIC OPTOPLANAR PACMAN POP Power47 PowerTrench QFET Q QT Optoelectronics Quiet eries ILENT WITCHER MART TART TAR*POWER tealth uperot -3 uperot -6 uperot - yncfet TinyLogic TruTranslation UHC UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product tatus Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4