AM2306N. Analog Power N-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = 10V V GS = 4.5V 3.
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1 N-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low r DS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-3 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications AM36N PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = V V GS = 4.5V 3. G D S ABSOLUTE MAXIMUM RATINGS (T A = 5 o C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage V DS 3 Gate-Source Voltage V GS ± V Continuous Drain Current a T A =5 o C 3.5 I T A =7 o D C.8 A Pulsed Drain Current b I DM 6 Continuous Source Current (Diode Conduction) a I S.5 A Power Dissipation a T A =5 o C.3 T A =7 o C.8 Operating Junction and Storage Temperature Range T J, T stg -55 to 5 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= sec C/W R θja Steady-State 66 C/W P D W o C Notes a. Surface Mounted on x FR4 Board. b. Pulse width limited by maximum junction temperature
2 AM36N Parameter Symbol Test Conditions Limits Min Typ Max Unit Static Gate-Threshold Voltage V GS(th) V DS = V GS, I D = 5 ua V Gate-Body Leakage I GSS V DS = V, V GS = V ± na Zero Gate Voltage Drain Current I DSS V DS = 4 V, V GS = V V DS = 4 V, V GS = V, T J = 55 o C 5 ua On-State Drain Current A I D(on) V DS = 5 V, V GS = V 6 A Drain-Source On-Resistance A r DS(on) V GS = V, I D = 3.5 A 58 V GS = 4.5 V, I D = 3 A 8 mω Forward Tranconductance A g fs V DS = 5 V, I D = 3.5 A 6.9 S Diode Forward Voltage V SD I S =.3 A, V GS = V.8 V Dynamic b Total Gate Charge Q g. V DS = 5 V, V GS = 4.5 V, Gate-Source Charge Q gs.5 I D = 3.5 A Gate-Drain Charge Q gd.8 nc Turn-On Delay Time t d(on) 6 Rise Time t r V DD = 5 V, R L = 5 Ω, ID = A, 5 Turn-Off Delay Time t d(off) VGEN = V 3 ns Fall-Time t f 3 Notes a. Pulse test: PW <= 3us duty cycle <= %. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
3 AM36N Typical Electrical Characteristics (N-Channel) I D, D R A IN C U R R E N T (A 4 3 V GS = V 6.V 5.V 4.V 3.V ID, DRAIN CURRENT (A) VDS = 5V TA = -55 o C 5 o C 5 o C V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics VGS, GATE TO SOURCE VOLTAGE (V) Figure. Body Diode Forward Voltage Variation with Source Current and Temperature R D S ( O N ), N O R M A L IZ E D D R A IN - S O U R C E O N - RESISTANC V GS = I D, DRAIN CURRENT (A) 4.5V V CAPACITANCE (pf C ISS C OSS C RSS f = MHz V GS = V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics Vgs Voltage ( V ) Normalized RDS(on) V GS = V I D = 7A Qg, Gate Charge (nc) T J Juncation Temperature ( 篊 ) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3
4 AM36N Typical Electrical Characteristics (N-Channel). IS, REVERSE DRAIN CURRENT (A) VGS = V TA = 5 o C 5 o C R DS(ON), ON-RESISTANCE(OHM) TA = 5 o C VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) Figure 7. Transfer Characteristics VDS = VGS ID = -5mA TA, AMBIENT TEMPERATURE (oc) Figure 9. Vth Gate to Source Voltage Vs Temperature P(pk), PEAK TRANSIENT POWER (W) Figure 8. On-Resistance with Gate to Source Voltage SINGLE PULSE RqJA = 5oC/W TA = 5oC... t, TIME (SEC) Figure. Single Pulse Maximum Power Dissipation.. D = Normalized Thermal Transient Junction to Ambient RqJ A (t) = r(t) + RqJA RqJA = 5 o C/W P(pk) t t. SINGLE P ULSE T J - T A = P * Rq J A(t) Duty Cycle, D = t / t.... t, TIME (s e c) Figure. Transient Thermal Response Curve 4
5 AM36N Package Information 5
6 AM36N Ordering information AM36N-T-XX A: Analog Power M: MOSFET 36: Part number N: N-Channel T: Tape & reel XX: Blank: Standard PF: Leadfree 6
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Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More informationNTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223
NTF955 Power MOSFET V,. A, Single P Channel SOT Features TMOS7 Design for low R DS(on) Withstands High Energy in Avalanche and Commutation Modes Pb Free Package is Available Applications Power Supplies
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
More informationNTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
More informationN-Channel PowerTrench MOSFET
FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More information3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range
DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling
More informationP-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
More informationNDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
More informationNTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET
NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationDevice Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationRM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information
RM4503S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM4503S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The SOP-8 package is universally preferred
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FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance
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More informationACE3006M N-Channel Enhancement Mode MOSFET
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NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package May be Available. The GSuffix Denotes a
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NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management
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NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
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N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
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FDBL8636-F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationNDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
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A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V
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A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
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