Bias Resistor Transistors
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- Darrell Houston
- 6 years ago
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1 Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTC4EETG Series S-LDTC4EETG Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable. PIN BASE (INPUT) R R2 SC-89 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 0 madc THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation, FR4 Board (Note T A = 25 C Derate above 25 C P D mw mw/ C Thermal Resistance, JunctiontoAmbient (Note ) R JA 600 C/W Total Device Dissipation, FR4 Board (Note T A = 25 C Derate above 25 C P D mw mw/ C Thermal Resistance, JunctiontoAmbient (Note 2) R JA 400 C/W Junction and Storage Temperature Range T J, T stg 55 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Minimum Pad 2. Inch Pad Rev.B /9
2 LDTC4EETG Series,S-LDTC4EETG Series ORDERING INFORMATION AND RESISTOR VALUES Device Marking R (K) R2 (K) Package Shipping 8A LDTC4EETG SC Tape & Reel 8B LDTC24EETG SC Tape & Reel 8C LDTC44EETG SC Tape & Reel 8D 47 LDTC4YETG SC Tape & Reel 94 LDTC4TETG SC Tape & Reel 8F 4.7 LDTC43TETG SC Tape & Reel 8H LDTC23EETG SC Tape & Reel LDTC43EETG 8J SC Tape & Reel 8K LDTC43ZETG SC Tape & Reel LDTC24XETG 8L SC Tape & Reel LDTC23JETG 8M SC Tape & Reel 8N 0 0 LDTC5EETG SC Tape & Reel LDTC44WETG 8P SC Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutoff Current (V CB = 50 V, I E = 0) I CBO 0 nadc CollectorEmitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc EmitterBase Cutoff Current LDTC4EETG (V EB = 6.0 V, I C = 0) LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG CollectorBase Breakdown Voltage (I C = A, I E = 0) V (BR)CBO 50 Vdc CollectorEmitter Breakdown Voltage (Note 3) (I C = 2.0 ma, I B = 0) I EBO madc V (BR)CEO 50 Vdc Rev.B 2/9
3 LDTC4EETG Series,S-LDTC4EETG Series Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3) DC Current Gain LDTC4EETG (V CE = V, I C = 5.0 ma) LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG CollectorEmitter Saturation Voltage (I C = ma, I B = 0.3 ma) (I C = ma, I B = 5 ma) LDTC23EETG (I C = ma, I B = ma) LDTC43TETG/LDTC4TETG/ LDTC43EETG/LDTC43ZETG/LDTC24XETG Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L =.0 k ) LDTC4EETG LDTC24EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG (V CC = 5.0 V, V B = 3.5 V, R L =.0 k ) LDTC44EETG (V CC = 5.0 V, V B = 5.5 V, R L =.0 k ) LDTC5EETG (V CC = 5.0 V, V B = 4.0 V, R L =.0 k ) LDTC44WETG Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L =.0 k ) (V CC = 5.0 V, V B = 5 V, R L =.0 k ) LDTC43TETG LDTC43ZETG LDTC4TETG LDTC5 EETG h FE V CE(sat) 5 Vdc V OL Vdc V OH 4.9 Vdc 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Input Resistor Resistor Ratio LDTC4EETG LDTC24EETG LDTC44EETG LDTC4YETG LDTC4TETG LDTC43TETG LDTC23EETG LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC5EETG LDTC44WETG LDTC4EETG/LDTC24EETG/ LDTC44EETG/LDTC5EETG LDTC4YETG LDTC43TETG/LDTC4TETG LDTC23EETG/LDTC43EETG LDTC43ZETG LDTC24XETG LDTC23JETG LDTC44WETG R R /R k Rev.B 3/9
4 LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC4EETG VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Ic/Ib= hfe, DC CURRENT GAIN (NORMALIZED) 00 Vce=V Fig. VCE(sat) VS IC Fig. 2 DC CURRENT GAIN Cob, CAPACITANCE (pf) f = MHz IE = 0 A Vo=5V VR, REVERSE BIAS VOLTAGE (V) Fig. 3 OUTPUT CAPACITANCE Vin, INPUT VOLTAGE (V) Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 4/9
5 LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC4EETG 0 Vo=V Vin, INPUT VOLTAGE (V) COLLECTOR 25 CURRENT:Ic(mA) Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 5/9
6 LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC5EETG VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Ic/Ib= hfe, DC CURRENT GAIN (NORMALIZED) 00 Vce=V Fig. 6 VCE(sat) VS IC Fig. 7 DC CURRENT GAIN Cob, CAPACITANCE (pf) f = MHz IE = 0 A Vo=5V VR, REVERSE BIAS VOLTAGE (V) Vin, INPUT VOLTAGE (V) Fig. 8 OUTPUT CAPACITANCE Fig. 9 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 6/9
7 LDTC4EETG Series,S-LDTC4EETG Series TYPICAL ELECTRICAL CHARACTERISTICS LDTC5EETG 0 Vo=V Vin, INPUT VOLTAGE (V) Fig. INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 7/9
8 LDTC4EETG Series,S-LDTC4EETG Series TYPICAL APPLICATIONS FOR NPN BRTs +2 V ISOLATED LOAD FROM P OR OTHER LOGIC Fig. LEVEL SHIFTER:CONNECTS 2 TO 24 VOLT CIRCUITS TO LOGIC +2 V V CC OUT IN LOAD Fig. 2 OPEN COLLECTOR INVERTER: INVERTS THE INPUT SIGNAL Fig. 3 INEXPENSIVE,UNREGULATED CURRENT SOURCE Rev.B 8/9
9 LDTC4EETG Series,S-LDTC4EETG Series SC-89 K B A -X Y- S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL C-0 OBSOLETE, NEW STANDARD 463C-02. M G 2 PL D 3 PL 0.08 (0.003) M X C Y J N MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A B C D G 0.50 BSC BSC H 0.53 REF 0.02 REF J K L. REF REF M N S T- SEATING PLANE H H L G RECOMMENDED PATTERN OF SOLDER PADS Rev.B 9/9
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Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
MJ21195 PNP MJ21196 NPN
MJ21195 PNP MJ21196 NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon
BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching
BC846ALT1G Series. General Purpose Transistors. NPN Silicon
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors
MJD, NJVMJDT4G (NPN), MJD7, NJVMJD7T4G (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Device NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications
MJD (NPN), MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, lowpower, highgain audio amplifier applications. Features High DC Current
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
MJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR
NSSC3ET4G, 3. A, Low CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor
NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface