B C E. absolute maximum ratings at 25 C ambient temperature (unless otherwise noted )
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1 Designed Specifically for High Frequency Electronic Ballasts up to 50 W h FE 7 to 1 at = 1 V, Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E TO-0 PACKAGE (TOP VIEW) This series is not recommended for new designs. 1 3 Pin is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 5 C ambient temperature (unless otherwise noted ) RATING SYMBOL VALUE UNIT voltage (V BE = 0) S 700 V Collector-base voltage (I E = 0) V CBO 700 V voltage (I B = 0) O 400 V Emitter-base voltage V EBO 9 V Continuous collector current.5 A Peak collector current (see Note 1) M 6 A Peak collector current (see Note ) M 8 A Continuous base current I B 1.5 A Peak base current (see Note ) I BM.5 A Continuous device dissipation at (or below) 5 C case temperature P tot 50 W Operating junction temperature range T j -65 to +150 C Storage temperature range T stg -65 to +150 C NOTES: 1. This value applies for = ms, duty cycle %.. This value applies for = 300 µs, duty cycle %. 1
2 electrical characteristics at 5 C case temperature (unless otherwise noted) O(sus) ES I EBO V BE(sat) (sat) h FE V FCB PARAMETER TESONDITIONS MIN TYP MAX UNIT sustaining voltage cut-off current Emitter cut-off current Base-emitter saturation voltage saturation voltage Forward current transfer ratio Collector-base forward bias diode voltage = 0 ma L = 5 mh (see Note 3) 400 V = 700 V = 700 V V BE =0 V BE =0 = 90 C V EB = 9 V =0 1 ma = 1 V = 1 V = 5 V = 800mA = ma = 800mA = 3. A (see Notes 4 and 5) = 90 C (see Notes 4 and 5) = 90 C NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, = 300 µs, duty cycle %. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3. mm from the device body. thermal characteristics B = 60 ma 870 mv PARAMETER MIN TYP MAX UNIT R θja Junction to free air thermal resistance 6.5 C/W R θjc Junction to case thermal resistance.5 C/W inductive-load switching characteristics at 5 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT Storage time.5 3 µs =800 ma =160 ma V CC = 40 V Current fall time ns =30 ma V CLAMP =300 V t xo Cross over time ns Storage time =800 ma =160 ma V CC = 40 V µs Current fall time =0 ma V CLAMP =300 V ns µa V V resistive-load switching characteristics at 5 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT Storage time =800 ma =160 ma µs Current fall time V CC =160 ma ns
3 TYPICAL CHARACTERISTICS h FE - Forward Current Transfer Ratio FORWARD CURRENT TRANSFER RATIO L770CHF 30 = 1 V = 5 V COLLECTOR-EMITTER SATURATION VOLTAGE Figure 1. Figure. /.5 V CC = 40 V V CLAMP L770CI1 t xo (sat) - Collector-Emitter Saturation Voltage - V I B = 90 C = 40 V, = 30 ma, V CLAMP, L770CVB L770CI Figure 3. Figure 4. 3
4 TYPICAL CHARACTERISTICS / 8 V CC = 40 V V CLAMP L770CI Figure 5. Figure 6. RESISTIVE SWITCHING TIMES, V CC, L770CR1 = 40 V, = 0 ma, V CLAMP, RESISTIVE SWITCHING TIMES = 160 ma, L770CI4 L770CR Resistive Switching Time - µs Resistive Switching Time - µs Figure 7. Figure 8. 4
5 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA L770CFB = µs = 1 ms = ms DC Operation Collector-Emitter Voltage - V Figure 9. Figure. MAXIMUM REVERSE-BIAS SAFE OPERATING AREA Collector-Emitter Voltage - V L770CRB V BE(off) = -5 V 5
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