MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A COMMON EMITTER BIPOLAR TRANSISTORS MCABT8E2207C6

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1 MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A Hermetic MO-042AA (LCC6) Silicon Planar Epitaxial 4x 2N2222A NPN & 4x 2N2907A PNP Transistors In A Common Emitter High Speed Low Saturation Switching High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise stated) 2N2222 2N2907 CBO oltage CEO Collector - Emitter oltage EBO Emitter - Base oltage 6-5 I C Continuous Collector Current 800mA -600mA P D () Power Dissipation T SP = 25 C.94W 2.8W Derate Above 25 C.0mW/ C 2.5mW/ C Total Power Dissipation (2) T SP = 25 C 5.83W Derate Above 25 C 33.33mW/ C T J Junction Temperature Range -65 to +200 C T stg Storage Temperature Range -65 to +200 C THERMAL PROPERTIES Symbols Parameters 2N2222 Max. 2N2907 Max. Units R θjsp ()(3) R θjsp (2)(3) Thermal Resistance, Junction To Solder Pad (Per Device) C/W Thermal Resistance, Junction To Solder Pad (Package) 30 C/W Notes () One device conducting only. (2) With all parts conducting, maximum power dissipation per device = 729mW, limited by maximum junction temperature. (3) Stated R θjsp properties assume infinite heatsink. reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Coventry Road, Lutterworth, Leicestershire, LE7 4JB Document Number: sales@semelab-tt.com Website: (0) (0) of 7

2 2N2222A ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise stated) Collector - Emitter (BR)CEO Breakdown oltage I C = 0mA I B = 0 40 (BR)CBO Breakdown oltage I C = 0µA I E = 0 75 Emitter - Base (BR)EBO Breakdown oltage I E = 0µA I C = I Collector - Emitter CEX EB = 3 CE = 60 0 na I CBO I EBO Emitter CB = 75 I E = 0 0 µa CB = 60 I E = 0 0 na T A = 50 C 0 µa EB = 6 I C = 0 0 µa EB = 3 I C = 0 0 na I CES Collector CE = na CE(sat) BE(sat) h FE Collector-Emitter Saturation oltage Base-Emitter Saturation oltage Forward Current Transfer Ratio I C = 50mA I B = 5mA 0.3 I C = 500mA I B = 50mA.0 I C = 50mA I B = 5mA I C = 500mA I B = 50mA 2.0 I C = 0.mA CE = 0 35 I C =.0mA CE = 0 50 I C = 0mA CE = 0 75 T A = -55 C 35 I C = 50mA CE = I C = 500mA CE = (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 2 of 7

3 2N2222A DYNAMIC CHARACTERISTICS (T A = 25 C unless otherwise stated) C obo Output Capacitance CB = 0 I E = 0 f =.0MHz 8 C ibo Input Capacitance EB = 0.5 I C = 0 f =.0MHz 30 pf h fe Small Signal Current Gain I C =.0mA CE = 0 f =.0kHz I C = 0mA CE = 0 f =.0kHz f T Transition Frequency I C = 20mA CE = 20 f = 00MHz 300 MHz t d Delay Time CC = 30 BE = t r Rise Time I C = 50mA I B = 5mA 25 t s Storage Time CC = 30 BE = ns t f Fall Time I C = 50mA I B = I B2 = 5mA (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 3 of 7

4 2N2907A ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise stated) (BR)CEO Collector - Emitter Breakdown oltage I C = -0mA I B = 0-60 (BR)CBO Breakdown oltage I C = -0µA I E = 0-60 Emitter - Base (BR)EBO Breakdown oltage I E = -0µA I C = I Collector - Emitter CEX EB = -0.5 CE = na I CBO CE(sat) BE(sat) h FE Collector-Emitter Saturation oltage Base-Emitter Saturation oltage Forward Current Transfer Ratio CB = -50 I E = 0-0 na T A = 50 C -0 µa I C = -50mA I B = -5mA -0.4 I C = -500mA I B = -50mA -.6 I C = -50mA I B = -5mA I C = -500mA I B = -50mA -2.6 I C =- 0.mA CE = I C = -.0mA CE = I C = -0mA CE = T A = -55 C 50 I C = -50mA CE = I C = -500mA CE = (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 4 of 7

5 2N2907A DYNAMIC CHARACTERISTICS (T A = 25 C unless otherwise stated) C obo C ibo Output Capacitance Input Capacitance h fe Small Signal Current Gain f T t on t off Transition Frequency Turn On Time Turn Off Time CB = -0 I E = 0 f =.0MHz EB = -2.0 I C = 0 f =.0MHz I C = -.0mA CE = -0 f =.0kHz I C = -50mA CE = -20 f = 00MHz CC = -30 I B =-5mA CC = -30 I B = -I B2 = -5mA I C = -50mA I C = -50mA pf 200 MHz ns Notes Pulse Width 380µs, duty cycle δ 2%. Characteristics by design. +44 (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 5 of 7

6 INTERNAL LAYOUT ISUALISATION PACKAGE PIN CONNECTIONS (Underside iew) Pin Device Connection Pin Device Connection Q3 Collector 0 Q7 Collector 2 Q3 Base Q7 Base 3 Q4 Base 2 Q8 Base 4 Q4 Collector 3 Q8 Collector 5 Q5, Q6, Q7, Q8 Common Emitter (PNP) 4 Q, Q2, Q3, Q4 Common Emitter (NPN) 6 Q5 Collector 5 Q Collector 7 Q5 Base 6 Q Base 8 Q6 Base 7 Q2 Base 9 Q6 Collector 8 Q2 Collector +44 (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 6 of 7

7 MECHANICAL DATA Dimensions in mm (inches) PART ARIANT OPTIONS (6) C6 (MO-042AA) (Underside iew) MC A BT 8 E 2207 C6 Example variant selection MC A BT 8 E 2207 C6 A JS B JB Circuit Type Unique ID Characters Array Die Identifier JA JEDEC 2N2222 & 2N2907 Device Type ES Package Type BT = Bipolar C6 = LCC6 (MO-042AA) 8 Pad N N2 Technology Multi-Chip Unique ID Character Quantity of Devices 8 = 8 Devices Unique ID Character Configuration X = Isolated E = Common Emitter (6) (7) Termination Option A = Standard Au Pad Finish, ROHS G4 B = SN63PB37 Solder Dip, ROHS LD (6) (8) Screening Level Option JS = MIL-PRF-9500 S Equivalent JB = MIL-PRF-9500 TX Equivalent JA = MIL-PRF-9500 TX/ Equivalent ES = ESCC5000 Equivalent N & N2 = New Space Notes (6) Part variant options (termination, screening level) to be specified at point of order. (7) LD = e0, G4 = e4, as defined in J-STD-609 2nd Level Interconnect Category. (8) Please enquire with customer services regarding other requirements (pin connections, termination & screening level). +44 (0) (0) Coventry Road, Lutterworth, Leicestershire, LE7 4JB 7 of 7