2N3810HR. Hi-Rel PNP dual matched bipolar transistors -60 V, A. Datasheet. Features. Description. Flat-8 TO-78 LCC-6

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Datasheet Hi-Rel PNP dual matched bipolar transistors -60 V, -0.

1 Datasheet Hi-Rel PNP dual matched bipolar transistors -60 V, A 8 5 Features Order code Package Radiation level 2N380Kx Flat-8-4 Flat-8 2N380RKx Flat-8 00 krad(si) SOC380HRx LCC SOC380RHRx LCC-6 00 krad(si) 4 2N380HRx TO LCC-6 TO V (BR)CBO = -60 V I C (max) = A H FE at 0 ma / 5 V > 25 Up to 00 krad (Si) low dose rate Temperature range: -65 C to 200 C Linear gain characteristics ESCC qualified: 5207/005 specification Product status link 2N380HR Description 2N380K, SOC380HR and 2N380HR are silicon planar PNP transistors packaged in Flat-8, LCC-6 and TO-78 respectively. 00 krad versions are available in Flat-8 and LCC-6 packages. They are specifically designed for aerospace Hi-Rel applications and ESCC qualified 5207/005 specification. Figure. Internal schematic diagrams C C2 8 2 B B2 7 3 E E E B C Pin 4 and pin 5 are connected together to the seal ring and lid AM0330REV 4 5 LCC-6 Flat-8 E2 B2 C2 AM0329REV TO-78 The upper metallic shield is not internally connected neither to any pin nor to the die inside B E C E2 C2 B DS Rev 8 - September 208 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings Electrical ratings Table. Absolute maximum ratings Symbol Parameter Value Unit V CBO Collector-base voltage (I E = 0) -60 V V CEO Collector-emitter voltage (I B = 0) -60 V V EBO Emitter-base voltage (I C = 0) -5 V I C Collector current -50 ma for Flat-8 () 0.5 P TOT Total dissipation at T amb 25 C for Flat-8 (2) 0.6 for LCC-6 () 0.5 for LCC-6 (2) 0.6 W Total dissipation at T c 25 C for TO-78 () 0.5 for TO-78 (2) 0.6 W T STG Storage temperature range -65 to 200 C T J Max. operating junction temperature 200 C. One section. 2. Both sections. Table 2. Thermal data Symbol Parameter Value Unit for Flat-8 () 350 R thja Thermal resistance junction-ambient max for Flat-8 (2) 292 for LCC-6 () 350 for LCC-6 (2) 292 C/W R thjc Thermal resistance junction-case max for TO-78 () 350 for TO-78 (2) 292. One section. 2. Both sections. DS Rev 8 page 2/5

3 Electrical characteristics 2 Electrical characteristics T case = 25 C unless otherwise specified. Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO I EBO V (BR)CBO V () (BR)CEO V (BR)EBO V () CE(sat) V () BE(sat) h () FE Collector-base cut-off current (I E = 0) Emitter-base cut-off current (I C = 0) Collector-base breakdown voltage (I E = 0) Collector-emitter breakdown voltage (I B = 0) Emitter-base breakdown voltage (I C = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain V CB = -50 V - -0 na V CB = -50 V T C = 50 C - -0 μa V EB = -4 V na I C = -0 μa V I C = -0 ma V I E = -0 μa -5 - V I C = -00 µa I B = -0 µa V I C = - ma I B = -00 µa V I C = -00 µa I B = -0 µa V I C = - ma I B = -00 µa V I C = 0 µa V CE = 5 V 00 I C = 00 µa V CE = 5 V I C = 500 µa V CE = 5 V I C = ma V CE = 5 V I C = 0 ma V CE = 5 V 25 I C = 00 µa V CE = -5 V T amb = -55 C 60 h FE2- / h FE2-2 DC current ratio comparison I C = -00 µa V CE = -5 V h FE2- / h FE2-2 DC current ratio comparison I C = -00 µa V CE = -5 V T amb = -55 C to +25 C Δ V BE -V BE2 Δ V BE -V BE2 I Lks Base-emitter voltage differential Base-emitter voltage differential Leakage current between sections V CE = -5 V I C = -0 µa - 5 mv V CE = -5 V I C = -00 µa - 3 mv V CE = -5 V I C = -0 ma - 5 mv V CE = -5 V I C = -00 µa T amb = -55 C to +25 C mv T amb = +25 C to +25 C - mv V = -50 V to E 2, B 2, C 2 V = 0 V to E, B, C - -5 µa DS Rev 8 page 3/5

4 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit h fe Small signal current gain V CE = -0 V I C = - ma f = khz f T Transition frequency I C = - ma V CE = -5 V f = 00 MHz MHz C OBO Output capacitance (I E = 0) V CB = -5 V 00 khz f MHz - 6 pf C IBO Input capacitance (I C = 0) V EB = -0.5 V 00 khz f MHz - 5 pf hie Input impedance I C = - ma V CE = -0 V f = khz 3-30 kω NF Noise figure V CE = -5 V I C = -200 µa R S = 2 kω f = 00 Hz - 7 db NF2 Noise figure V CE = -5 V I C = -200 µa R S = 2 kω f = khz - 3 db V CE = -5 V I C = -200 µa NF3 Noise figure R S = 2 kω db Bandwidth = 0 Hz to 5.7 khz. Pulsed duration = 300 µs, duty cycle.5% DS Rev 8 page 4/5

5 Electrical characteristics (curves) 2. Electrical characteristics (curves) Figure 2. h V CE = 5 V Figure 3. V h FE = AM6340v AM6340v TJ=-55 C TJ=-40 C TJ=25 C TJ=0 C TJ=25 C TJ=-55 C TJ=-40 C TJ=25 C TJ=0 C TJ=25 C IC(A) IC(A) 0.0 Figure 4. V h FE = 0 AM634v TJ=-55 C TJ=-40 C TJ=25 C 0.4 TJ=0 C TJ=25 C IC(A) DS Rev 8 page 5/5

6 Radiation hardness assurance 3 Radiation hardness assurance The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5207/005 and ESCC specifications. ESCC radiation assurance Each product lot is tested according to the ESCC basic specification ST goes beyond the ESCC specification by performing the following procedure: Test of pieces by wafer, 5 biased at least 80% of V (BR)CEO, 5 unbiased and kept for reference. Irradiation at 0. rad (Si)/s Acceptance criteria of each individual wafer if as 00 krad guaranteed if all 0 samples comply with the post radiation electrical characteristics. Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 00 krad (Si) and after 24 hour annealing at room temperature and after an additional 68 hour annealing at 00 C. Table 4. Radiation summary Radiation test Wafer test Part tested Dose rate 00 krad ESCC Each 5 biased + 5 unbiased 0. rad/s Acceptance ESCC Table 5. ESCC5207/005 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max Unit I CBO Collector cut-off current (I E =0) V CB = 60 V - 0 na I EBO Emitter cut-off current (I C = 0) V EB = 4 V - 20 na V (BR)CBO Collector-base breakdown voltage (I E = 0) I C =0 μa 60 - V V () (BR)CEO I C = 0 ma 60 - V V (BR)EBO Emitter-base breakdown voltage (I C = 0) I E = 0 μa 5 - V V CE(sat) () Collector-emitter saturation voltage I C =00 μa, I B = 0 μa I C = ma, I B = 00 μa V V BE(sat) () Base-emitter saturation voltage I C =00 μa, I B = 0 μa I C = ma, I B = 00 μa V I C = 0 μa, V CE = 5 V [50] - I C = 00 μa, V CE = 5 V [75] [h FE ] () Post irradiation gain calculation (2) I C = 500 μa, V CE = 5 V [75] Pulsed duration = 300 μs, duty cycle 2 % I C = ma, V CE = 5 V [75] I C = 0 ma, V CE = 5 V [65] - 2. The post-irradiation gain calculation of [h FE ], made using h FE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 09. DS Rev 8 page 6/5

7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 8 page 7/5

8 Flat-8 package information 4. Flat-8 package information Figure 5. Flat-8 package outline _6 Table 6. Flat-8 mechanical data Symbol Milimeters Inches Min. Typ. Max. Min. Typ. Max. A b c D E E E e L Q S N DS Rev 8 page 8/5

9 LCC-6 package information 4.2 LCC-6 package information Figure 6. LCC-6 package outline Pin identification _6 Table 7. LCC-6 mechanical data Dim. Milimeters Inches Min. Typ. Max. Min. Typ. Max. A C D D E G I L M N N N r DS Rev 8 page 9/5

10 TO-78 package information 4.3 TO-78 package information Figure 7. TO-78 package outline B A C D E F L G I H _9 Table 8. TO-78 mechanical data Dim. Milimeters Inches Min. Typ. Max. Min. Typ. Max. A B C D E F G H I L DS Rev 8 page 0/5

11 DS Rev 8 page /5 5 Ordering information Part number 2N380K - Agency specification Quality level Engineering model - Table 9. Ordering information Radiation level Package Mass Lead finish Marking () Packing 2N380RKG 5207/005/0R ESCC flight 00 krad Gold R 2N380RKT 5207/005/R ESCC flight 00 krad Flat g Solder dip R Gold 2N380K 2N380KG 5207/005/0 ESCC flight - Gold N380KT 5207/005/ ESCC flight - Solder dip SOC380 - Engineering model - SOC380RHRG 5207/005/07R ESCC flight 00 krad Gold R SOC380RHRT 5207/005/09R ESCC flight 00 krad LCC g Solder dip R Gold SOC380 SOC380HRG 5207/005/07 ESCC flight - Gold SOC380HRT 5207/005/09 ESCC flight - Solder dip N380G 5207/005/0 ESCC flight - Gold TO g 2N380T 5207/005/02 ESCC flight - Solder dip Waffle pack Waffle pack Strip pack. Specific marking only. The full marking includes in addition: For the Engineering Models: ST logo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. Contact ST sales office for information about the specific conditions for: Products in die form Tape and reel packing 2N380HR Ordering information

12 Other information 6 Other information 6. Traceability information The date code in formation is structured as described in the table below. Table 0. Date codes Model Date code () EM ESCC 3yywwN yywwn. yy = year, ww = week number, N = lot index in the week. 6.2 Documentation Each product shipment includes a set of associated documentation within the shipment box. This documentation depends on the quality level of the products, as detailed in the table below. The documentation is provided on printed paper in a dedicated envelop. Table. Default documentation provided with the parts Quality level Engineering model ESCC flight Documentation Certificate of conformance including: Customer name Customer purchase order number ST sales order number and item ST part number Quantity delivered Date code Reference data sheet Reference to TN8 on engineering models ST Rennes assembly lot ID Certificate of conformance including: Customer name Customer purchase order number ST sales order number and item ST part number Quantity delivered Date code Serial numbers Reference of the applicable ESCC Qualification maintenance lot Reference to the ESCC detail specification ST Rennes assembly lot ID Radiation verification test report (). Report of the ESCC22900 test supporting the delivered parts (00 krad (Si) guaranteed versions only). DS Rev 8 page 2/5

13 Revision history Table 2. Document revision history Date Revision Changes 0-Dec-2008 Initial release. Added Section 4: Ordering information. 08-Jan Modified Table on page 4-Nov May Nov Jan Jul Added:Section 2.: Electrical characteristics (curves) Updated: Section 3: Package mechanical data Updated section Table Device summary. Added Section 4: Ordering information. Updated Table 2: Absolute maximum ratings and Table 4: Thermal data for LCC-6 package Minor text changes. Updated Table2: Absolute maximum ratings and Table 4: Thermal data for LCC-6 package. Minor text changes. Updated Table. Absolute maximum ratings. Minor text changes. 04-Sep Updated cover image and Figure. Internal schematic diagrams. Minor text changes. DS Rev 8 page 3/5

14 Contents Contents Electrical ratings Electrical characteristics Electrical characteristics (curves) Radiation hardness assurance Package information Flat-8 package information LCC-6 package information TO-78 package information Ordering information... 6 Other information Traceability information Documentation...2 Revision history...3 DS Rev 8 page 4/5

15 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 208 STMicroelectronics All rights reserved DS Rev 8 page 5/5

Polarity V (BR)CEO IC (max.) h FE (1) 100 krad (Si) low dose rate

Datasheet Hi-Rel NPN and PNP complementary transistors 60 V, 0.8 A 8 5 Features Polarity V (BR)CEO IC (max.) h FE NPN 60 V 0.8 A 160 1 4 Flat-8 PNP -60-0.8 A 160 1. at IC = 1 A and V CE = 2 V 100 krad