Features. H FE at 5 V - 10 ma > 80. Description

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1 2N5551HR Hi-Rel NPN bipolar transistor 160, 0.5 A Datasheet - production data TO-18 LCC-3 1 Features B CEO 160 I C (max) 0.5 A H FE at 5-10 ma > 80 UB Hermetic packages ESCC and JANS qualified Up to 100 krad(si) low dose rate Description Figure 1. Internal schematic diagram The 2N5551HR is a silicon planar NPN transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Device Qualification system Table 1. Device summary (1) Agency specification Package Other features EPPL JANSR2N5551UBx JANSR MIL-PRF-19500/761 UB 100 krad JANS - JANS2N5551UBx JANS MIL-PRF-19500/761 UB - - 2N5551RUBx ESCC 5201/019 UB 100 krad ESCC Target 2N5551UB0x ESCC 5201/019 UB - Target SOC5551RHRx ESCC 5201/019 LCC krad ESCC Yes SOC5551HRB ESCC 5201/019 LCC-3 - Yes 2N5551RHRx ESCC 5201/019 TO krad ESCC - 2N5551HR ESCC 5201/019 TO Former SW version have been upgraded to ESCC 100 krad Low dose rate version. Contact ST sales office for more information. December 2013 DocID16935 Rev 5 1/18 This is information on a product in full production.

2 Contents 2N5551HR Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Radiation hardness assurance Package mechanical data Order codes Shipping details Date code Documentation Revision history /18 DocID16935 Rev 5

3 2N5551HR Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter alue Unit CBO Collector-base voltage (I E = 0) 180 CEO Collector-emitter voltage (I B = 0) 160 EBO Emitter-base voltage (I C = 0) 6 I C P TOT Collector current for TO-18 for LCC-3 and UB Total dissipation at T amb 25 C for TO-18 for LCC-3 and UB for LCC-3 and UB (1) Total dissipation at T c 25 C for TO When mounted on a 8 x 10 x 0.6 mm ceramic substrate W TSTG Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C A A W W W Table 3. Thermal data for through-hole package Symbol Parameter alue Unit R thjc Thermal resistance junction-case max 146 C/W R thja Thermal resistance junction-ambient max 486 C/W thja Table 4. Thermal data for SMD package Symbol Parameter alue Unit Thermal resistance junction-ambient (1) max 302 C/W R Thermal resistance junction-ambient max 486 C/W 1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate. DocID16935 Rev 5 3/18 18

4 Electrical characteristics 2N5551HR 2 Electrical characteristics T case = 25 C unless otherwise specified. Table 5. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO Collector-base cut-off current (I E = 0) CB = 120 CB = 120 T C = 150 C na μa I EBO (BR)CBO (1) (BR)CEO (BR)EBO Emitter-base cut-off current (I C = 0) Collector-base breakdown voltage (I E = 0) Collector-emitter breakdown voltage (I B = 0) Emitter-base breakdown voltage (I C = 0) EB = 4-50 na I C = 100 μa I C = 1 ma I E = 10 μa 6 - CE(sat) (1) Collector-emitter saturation voltage I C = 50 ma I B = 1 ma I B = 5 ma BE(sat) (1) Base-emitter saturation voltage I C = 50 ma I B = 1 ma I B = 5 ma h FE (1) DC current gain I C = 1 ma I C = 50 ma CE = 5 CE = 5 CE = 5 CE = T amb = - 55 C For ESCC CE = h fe Small signal current gain f > 1 khz For JANS CE = f > 20 khz h fe Small signal current gain CE = 10 f > 100 MHz 1 - C obo Output capacitance (I E = 0) CB = 10 f = 1 MHz - 6 pf C ebo Emitter-base capacitance (I C = 0) For ESCC EB = 5 For JANS EB = 500 m f = 1 MHz f = 1 MHz - 20 pf 45 pf 1. Pulsed duration = 300 μs, duty cycle 1.5% 4/18 DocID16935 Rev 5

5 2N5551HR Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. h CE = 5 Figure 3. h FE = AM16336v1 TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C 1 TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C AM16337v IC(A) IC(A) Figure 4. h FE =10 1 AM16338v TJ=-55 C TJ=-40 C TJ=25 C TJ=110 C TJ=125 C IC(A) DocID16935 Rev 5 5/18 18

6 Radiation hardness assurance 2N5551HR 3 Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MIL- PRF-19500/255 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5201/019 and ESCC specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. A brief summary is provided below: All test are performed in accordance to MIL-PRF and test method 1019 of MIL-STD-750 for total Ionizing dose. Each wafer of each lot is tested. The table below provides for each monitored parameters of the test conditions and the acceptance criteria Table 6. MIL-PRF (test method 1019) post radiation electrical characteristics Symbol Parameter Test conditions Min. alue Max. Unit I CBO I EBO (BR)CEO (BR)BCO (BR)EBO h FE Collector to base cutoff current Emitter to base cutoff current Breakdown voltage, collector to emitter Breakdown voltage, base to collector Breakdown voltage, emitter to base Forward-current transfer ratio CB = na EB = na I C = 1 ma 184 I C = 100 μa 207 I EB = 10 μa 6.9 CE = 5 ; I C = 1 ma [40] (1) CE = 5 ; [40] (1) 250 CE = 5 ; I C = 50 ma [15] (1) CE(sat) Collector-emitter saturation voltage ; I B = 1 ma I C = 50 ma; I B = 5 ma 0.23 BE(sat) Base-emitter saturation voltage ; I B = 1 ma 1.15 I C = 50 ma; I B = 5 ma See method 1019 of MIL-STD-750 for how to determine [h FE ] by first calculating the delta (1/h FE ) from the pre- and Post-radiation h FE. Notice the [h FE ] is not the same as h FE and cannot be measured directly. The [h FE ] value can never exceed the pre-radiation minimum h FE that it is based upon. 6/18 DocID16935 Rev 5

7 2N5551HR Radiation hardness assurance ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: Test of 11 pieces by wafer, 5 biased at least 80% of (BR)CEO, 5 unbiased and 1 kept for reference Irradiation at 0.1 rad (Si)/s Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table 7 Delivery together with the parts of the radiation verification test (RT) report of the particular wafer used to manufacture the products. This RT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100 C. DocID16935 Rev 5 7/18 18

8 Radiation hardness assurance 2N5551HR Table 7. ESCC 5201/002 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CBO I EBO (BR)CBO (1) (BR)CEO (BR)EBO Collector cut-off current (I E = 0) Emitter cut-off current (I C = 0) Collector-base breakdown voltage (I E = 0) Collector-emitter breakdown voltage (I B = 0) Emitter-base breakdown voltage (I C = 0) CB = na EB =4-50 na I C = 100 μa I C = 1 ma I E = 10 μa 6 - CE(sat) (1) Collector-emitter saturation voltage I C = 50 ma I B = 1 ma I B = 5 ma BE(sat) (1) Base-emitter saturation voltage I C = 50 ma I B = 1 ma I B = 5 ma 1 1 [h FE ] (1) Post irradiation gain calculation (2) I C = 1 ma I C = 50 ma CE = 5 CE = 5 CE = 5 [40] [40] [15] Pulsed duration = 300 μs, duty cycle 2 % 2. The post-irradiation gain calculation of [h FE ], made using h FE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method /18 DocID16935 Rev 5

9 2N5551HR Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DocID16935 Rev 5 9/18 18

10 Package mechanical data 2N5551HR Table 8. LCC-3 mechanical data Dim. mm. Min. Typ. Max. A C D E F G I J K L M N R 0.30 Figure 5. LCC-3 drawings /18 DocID16935 Rev 5

11 2N5551HR Package mechanical data Table 9. TO-18 mechanical data Dim. mm. Min. Typ. Max. A 12.7 B 0.49 D 5.3 E 4.9 F 5.8 G 2.54 H 1.2 I 1.16 L 45 Figure 6. TO-18 drawings DocID16935 Rev 5 11/18 18

12 Package mechanical data 2N5551HR Table 10. UB mechanical data Dim. mm Min. Typ. Max. A B C D E F G H I L /18 DocID16935 Rev 5

13 2N5551HR Package mechanical data Figure 7. UB drawing DocID16935 Rev 5 13/18 18

14 14/18 DocID16935 Rev 5 5 Order codes Part number Agency specification Table 11. Order codes (1) EPPL Quality level Other features Package Lead finish Marking (2) Packing J2N5551UB1 - - Engineering model JANS - UB Gold J5551UB1 WafflePack 2N5551UB1 - - Engineering model ESCC - UB Gold 2N55511UB1 WafflePack SOC Engineering model ESCC - LCC-3 Gold SOC5551 WafflePack JANSR2N5551UBG MIL-PRF /761 - JANSR 100 krad HDR UB Gold JSR5551 WafflePack JANSR2N5551UBT MIL-PRF /761 - JANSR 100 krad HDR UB Solder dip JSR5551 WafflePack JANS2N5551UBG MIL-PRF /761 - JANS - UB Gold JS5551 WafflePack JANS2N5551UBT MIL-PRF /761 - JANS - UB Solder dip JS5551 WafflePack 2N5551RUBG 5201/019/08R Target ESCC 100 krad ESCC UB Gold R WafflePack 2N5551RUBT 5201/019/09R Target ESCC 100 krad ESCC UB Solder dip R WafflePack 2N5551UB /019/08 Target ESCC - UB Gold WafflePack 2N5551UB /019/09 Target ESCC - UB Solder dip WafflePack SOC5551RHRG 5201/019/04R Yes ESCC 100 krad ESCC LCC-3 Gold R WafflePack SOC5551RHRT 5201/019/05R Yes ESCC 100 krad ESCC LCC-3 Solder dip R WafflePack SOC5551HRB 5201/019/04 or Gold or solder 05 (3) Yes ESCC - LCC-3 dip or 05 (3) WafflePack 2N5551RHRG 5201/019/01R - ESCC 100 krad ESCC TO-18 Gold R Strip Pack Order codes 2N5551HR

15 DocID16935 Rev 5 15/18 Part number 2N5551RHRT 5201/019/02R - ESCC 100 krad ESCC TO-18 Solder dip R Strip Pack 2N5551HR Agency specification Table 11. Order codes (1) EPPL Quality level Other features Package Lead finish Marking (2) Packing 5201/019/01 or 02 (3) - ESCC - TO-18 Contact ST sales office for information about the specific conditions for: Products in die form Tape and reel packing Gold or solder dip or 02 (3 Strip Pack 1. Former SW version have been upgraded to ESCC 100 krad Low dose rate version. Contact ST sales office for more information. 2. Specific marking only. The full marking includes in addition: For the Engineering Models: ST lodo, date code; country of origin (FR). For ESCC flight parts: ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts: ST logo, date code, country of origin (FR), manufacturer code (CSTM), serail number of the part within the assembly lot. 3. Depending ESCC part number mentioned on the purchase order. 2N5551HR Order codes

16 Shipping details 2N5551HR 6 Shipping details 6.1 Date code Date code xyywwz is structured as below table: Table 12. Date code x yy ww z EM (ESCC & JANS) 3 ESCC FLIGHT JANS FLIGHT (diffused in Singapore) - W last two digits of the year week digits lot index in the week 6.2 Documentation Table 13. Documentation provided for each type of product Quality level Radiation level Documentation Engineering model - - JANS Flight - Certificate of conformance JANSR Flight ESCC Flight 100 krad Certificate of conformance 50 rad/s radiation verification test report - Certificate of conformance 100 krad Certificate of conformance 0.1 rad/s radiation verification test report 16/18 DocID16935 Rev 5

17 2N5551HR Revision history 7 Revision history 7 Table 14. Document revision history Date Revision Changes 04-Jan Initial release 17-May Modified: Table 1: Device summary and Table 9 on page 9 12-Jul Modified: Table 1: Device summary and Table 9 on page 9 13-Nov Added:Section 2.1: Electrical characteristics (curves) 12-Dec Updated Table 1: Device summary, Table 2: Absolute maximum ratings and Section 4: Package mechanical data. Added Section 5: Order codes and Section 6: Shipping details DocID16935 Rev 5 17/18 18

18 2N5551HR Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics N and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIE IMPLANTED DEICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIE APPLICATIONS OR ENIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIE, AUTOMOTIE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 18/18 DocID16935 Rev 5

Features. H FE at 5 V - 10 ma > 80. Description. Table 1. Device summary. Agency specification MIL-PRF /767 MIL-PRF /767

Features. H FE at 5 V - 10 ma > 80. Description. Table 1. Device summary. Agency specification MIL-PRF /767 MIL-PRF /767 2N5551HR Hi-Rel NPN bipolar transistor 160, 0.5 A Datasheet - production data 3 1 2 3 2 TO-18 LCC-3 1 Features B CEO 160 I C (max) 0.5 A H FE at 5-10 ma > 80 3 4 1 2 UB Pin 4 in UB is connected to the