RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET

Transcription

1 Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz Suitable for WiMAX, WiBro and multicarrier amplifier applications To be used in Class AB and Class C for WLL applications Typical Single-Carrier N-CDMA Performance: V DD = 28 Volts, I DQ = 1800 ma, P out = 35 Watts Avg, f = 2660 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = MHz, PAR = % Probability on CCDF Power Gain 146 db Drain Efficiency 226% 885 khz Offset -478 dbc in 30 khz Bandwidth Capable of Handling :1 28 Vdc, 2650 MHz, 160 Watts CW Output Power Features Characterized with Series Equivalent Large- Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications RoHS Compliant In Tape and Reel R6 Suffix = 0 Units per 56 mm, 13 inch Reel Document Number: MRF6P27160H Rev 2, 12/ MHz, 35 W AVG, 28 V SINGLE N-CDMA LATERAL N- CHANNEL RF POWER MOSFET CASE 375D-05, STYLE 1 NI Table 1 Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -05, 68 Vdc Gate-Source Voltage V GS -05, 12 Vdc Storage Temperature Range T stg - 65 to 0 C Case Operating Temperature T C 0 C Operating Junction Temperature (1,2) T J 225 C Table 2 Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 79 C, 160 W CW Case Temperature 71 C, 35 W CW R θjc C/W 1 Continuous use at maximum temperature will affect MTTF 2 MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product 3 Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers Go to Select Documentation/Application Notes - AN1955, Inc, , 2008 All rights reserved 1

2 Table 3 ESD Protection Characteristics Test Methodology Human Body Model (per JESD22- A114) Machine Model (per EIA/JESD22- A1) Charge Device Model (per JESD22- C1) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4 Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc) I DSS μadc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (V DS = Vdc, I D = 250 μadc) Gate Quiescent Voltage (3) (V DD = 28 Vdc, I D = 1800 madc, Measured in Functional Test) Drain-Source On-Voltage (1) (V GS = Vdc, I D = 22 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 28 pf Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1800 ma, P out = 35 W Avg N-CDMA, f = 2660 MHz, Single- Carrier N- CDMA, MHz Channel Bandwidth Carrier ACPR measured in 30 khz Channel ±885 khz Offset PAR = % Probability on CCDF Power Gain G ps db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1 Each side of device measured separately 2 Part internally matched both on input and output 3 Measurement made with device in push- pull configuration 2

3 V BIAS B1 R1 Z35 Z37 V SUPPLY C7 C6 C5 C4 C3 C C16 C17 C18 C19 Z17 Z19 Z21 Z23 Z25 Z27 Z29 Z31 RF INPUT Z1 Z3 Z2 C1 Z5 Z7 Z9 Z11 Z13 Z4 Z6 Z8 Z Z12 Z Z14 DUT C13 Z32 Z33 RF OUTPUT C2 Z16 Z18 Z20 Z22 Z24 Z26 Z28 Z30 V BIAS B2 R2 Z34 Z36 C14 V SUPPLY C12 C11 C C9 C8 C20 C21 C22 C23 C24 Z x 0139 Microstrip Z2, Z30 00 x 0070 Microstrip Z3, Z x 0086 Microstrip Z4, Z x 0230 Microstrip Z6, Z x 0080 Microstrip Z8, Z x 0340 Microstrip Z, Z x 02 Microstrip Z12, Z x 07 Microstrip Z14, Z 0461 x 0490 Microstrip Z16, Z x 0766 Microstrip Z18, Z x 04 Microstrip Z20, Z x 0760 Microstrip Z22, Z x 00 Microstrip Z24, Z x 0420 Microstrip Z26, Z x 0080 Microstrip Z28, Z x 0258 Microstrip Z x 0139 Microstrip Z x 0081 Microstrip Z34, Z x 0050 Microstrip Z36, Z x 0095 Microstrip PCB Arlon GX , 0030, ε r = 25 Figure 1 Test Circuit Schematic Table 5 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Beads, Surface Mount Fair- Rite C1, C2 56 pf Chip Capacitors ATC0B5R6CT500XT ATC C3, C8, C, C20 33 pf Chip Capacitors ATC0B3R3CT500XT ATC C4, C9 001 μf Chip Capacitors C1825C3J1RAC Kemet C5, C 22 μf, 50 V Chip Capacitors C1825C225J5RAC Kemet C6, C11 22 μf, 25 V Tantalum Chip Capacitors T491D226K025AT Kemet C7, C12 47 μf, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet C13, C14 43 pf Chip Capacitors ATC0B4R3CT500XT ATC C16, C17, C21, C22 μf, 50 V Chip Capacitors GRM55DR61H6KA88B Murata C18, C23 47 μf, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Chemi- Con C19, C μf, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Chemi- Con R1, R2 33, 1/3 W Chip Resistors CRCW1203R3FKEA Vishay 3

4 C17 B1 C7 C6 C5* C4* R1 C3 C C16 C18 - C19 C1 C13 B2 C2 C* C9* R2 C12 C11 C8 CUT OUT AREA C20 C21 C22 C23 C14 MRF6P27160H Rev 5 C24 - *Stacked Figure 2 Test Circuit Component Layout 4

5 G ps, POWER GAIN (db) G ps, POWER GAIN (db) TYPICAL CHARACTERISTICS V DD = 28 Vdc, P out = 35 W (Avg), I DQ = 1800 ma, N CDMA IS 95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 f, FREQUENCY (MHz) Figure 3 Single-Carrier N-CDMA Broadband P out = 35 Watts Avg 2 35 V G DD = 28 Vdc, P out = 70 W (Avg), 1 ps 34 I DQ = 1800 ma, N CDMA IS 95 Pilot, Sync, Paging, Traffic Codes 8 Through η D IRL ACPR ALT f, FREQUENCY (MHz) Figure 4 Single-Carrier N-CDMA Broadband P out = 70 Watts Avg G ps η D IRL η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT1 (dbc) ACPR 55 ALT η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT1 (dbc) IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) I DQ = 2700 ma 900 ma 2250 ma 1800 ma 1350 ma V DD = 28 Vdc, f1 = MHz, f2 = MHz Two Tone Measurements, 25 MHz Tone Spacing 1 P out, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, f1 = MHz, f2 = MHz Two Tone Measurements, 25 MHz Tone Spacing I DQ = 900 ma ma 2700 ma 1800 ma P out, OUTPUT POWER (WATTS) PEP 2250 ma Figure 5 Two- Tone Power Gain versus Output Power Figure 6 Third Order Intermodulation Distortion versus Output Power 5

6 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, P out = 160 W (PEP), I DQ = 1800 ma Two Tone Measurements (f1 f2)/2 = Center Frequency of 2645 MHz 3rd Order 5th Order 7th Order 1 0 P out, OUTPUT POWER (dbm) P3dB = 5432 dbm (27033 W) P1dB = 5364 dbm (231 W) V DD = 28 Vdc, I DQ = 1800 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 2645 MHz Ideal Actual 42 TWO TONE SPACING (MHz) P in, INPUT POWER (dbm) Figure 7 Intermodulation Distortion Products versus Tone Spacing Figure 8 Pulsed CW Output Power versus Input Power η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD = 28 Vdc, I DQ = 1800 ma, f = 2645 MHz 30 Single Carrier N CDMA, MHz Channel Bandwidth, PAR = % Probability (CCDF) G ps η D ACPR ALT P out, OUTPUT POWER (WATTS) AVG W CDMA Figure 9 Single- Carrier N- CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power ACPR (dbc), ALT1 (dbc) G ps, POWER GAIN (db) 5 G ps 0 V DD = 28 Vdc I DQ = 1800 ma η D f = 2645 MHz η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD = 24 V 28 V V I DQ = 1800 ma f = 2645 MHz 300 P out, OUTPUT POWER (WATTS) CW Figure Power Gain and Drain Efficiency versus CW Output Power P out, OUTPUT POWER (WATTS) CW Figure 11 Power Gain versus Output Power 6

7 TYPICAL CHARACTERISTICS 8 MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 35 W Avg, and η D = 226% MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product Figure 12 MTTF versus Junction Temperature 250 N-CDMA TEST SIGNAL PROBABILITY (%) IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) MHz Channel Bandwidth Carriers ACPR Measured in 30 khz ±885 khz Offset ALT1 Measured in 125 khz ±125 MHz Offset PAR = % Probability on CCDF PEAK TO AVERAGE (db) Figure 13 Single- Carrier CCDF N- CDMA (db) MHz 20 Channel BW 30 ALT1 in 125 khz ALT1 in 125 khz 40 Integrated BW Integrated BW ACPR in 30 khz ACPR in 30 khz Integrated BW Integrated BW f, FREQUENCY (MHz) Figure 14 Single- Carrier N- CDMA Spectrum 7

8 Z o = Ω f = 2600 MHz Z load Z source f = 2700 MHz f = 2700 MHz f = 2600 MHz V DD = 28 Vdc, I DQ = 1800 ma, P out = 35 W Avg f MHz Z source Ω Z load Ω j j j j j j j j j j j j j j j1 524 j j j j j j j j j192 Z source = Test circuit impedance as measured from gate to gate, balanced configuration Z load = Test circuit impedance as measured from drain to drain, balanced configuration Input Matching Network Device Under Test Output Matching Network Z source Z load 8 Figure Series Equivalent Source and Load Impedance

9 PACKAGE DIMENSIONS A A G 4 L 1 2 2X Q B bbb M T A M B M NOTES: 1 INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y145M CONTROLLING DIMENSION: INCH 3 DIMENSION H IS MEASURED 0030 (0762) AWAY FROM PACKAGE BODY 4 RECOMMENDED BOLT CENTER DIMENSION OF 152 (3861) BASED ON M3 SCREW 4X K E aaa 3 4 4X D M T A M B M ccc M T A M B M N (LID) PIN 5 M (INSULATOR) bbb M T A M B M T SEATING PLANE B (FLANGE) C H ccc M T A M R (LID) S (INSULATOR) bbb M T A M B M B M F INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 1400 BSC 3556 BSC H K L 0540 BSC 1372 BSC M N Q R S aaa 0013 REF 033 REF bbb 00 REF 025 REF ccc 0020 REF 051 REF STYLE 1: PIN 1 DRAIN 2 DRAIN 3 GATE 4 GATE 5 SOURCE CASE 375D-05 ISSUE E NI

10 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document REVISION HISTORY Revision Date Description 2 Dec 2008 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p 1, 2 Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p 1 Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p 1 Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table; related Continuous use at maximum temperature will affect MTTF footnote added, p 1 Corrected V DS to V DD in the RF test condition voltage callout for V GS(Q), and added Measured in Functional Test, On Characteristics table, p 2 Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p 2 Changed Z2, Z31 to Z2, Z30 and Z3, Z30 to Z3, Z31 in Z list for Fig 1, Test Circuit Schematic, p 3 Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p 3 Adjusted scale for Fig 5, Two- Tone Power Gain versus Output Power, to better match the device s capabilities, p 5 Removed lower voltage tests from Fig 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p 6 Replaced Fig 12, MTTF versus Junction Temperature, with updated graph Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p 7 Added Product Documentation and Revision History, p

11 How to Reach Us: Home Page: wwwfreescalecom Web Support: USA/Europe or Locations Not Listed:, Inc Technical Information Center, EL East Elliot Road Tempe, Arizona or wwwfreescalecom/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) wwwfreescalecom/support Japan: Japan Ltd Headquarters ARCO Tower F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or supportjapan@freescalecom Asia/Pacific: China Ltd Exchange Building 23F No 118 Jianguo Road Chaoyang District Beijing 0022 China supportasia@freescalecom For Literature Requests Only: Literature Distribution Center PO Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroupcom Information in this document is provided solely to enable system and software implementers to use products There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document reserves the right to make changes without further notice to any products herein makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts does not convey any license under its patent rights nor the rights of others products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part Freescale and the Freescale logo are trademarks of, Inc All other product or service names are the property of their respective owners, Inc , 2008 All rights reserved RF Document Device Number: Data MRF6P27160H Freescale Rev 2, 12/2008 Semiconductor 11