RF LDMOS Wideband Integrated Power Amplifiers

Transcription

1 Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on--chip matching that makes it usable from MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Typical WiMAX Performance: V DD =28Volts,I DQ1 = 130 ma, I DQ2 = 230 ma, P out = 5 Watts Avg., f = 3600 MHz, OFDM d, 64 QAM 3 / 4,4Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Power Gain 25 db Power Added Efficiency 15% Device Output Signal PAR % Probability on CCDF 8.5 MHz Offset --48 dbc in 1 MHz Channel Bandwidth Driver Applications Typical WiMAX Performance: V DD =28Volts,I DQ1 = 190 ma, I DQ2 = 230 ma, P out = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Power Gain 23.5 db Power Added Efficiency 3.5% Device Output Signal PAR % Probability on CCDF 8.5 MHz Offset --55 dbc in 1 MHz Channel Bandwidth Capable of Handling 10:1 32 Vdc, 3500 MHz, 25 Watts CW Output Power Stable into a 5:1 VSWR. All Spurs Below to 44 dbm CW P out Typical P 1 db Compression Point 30 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, RF Choke to Ground) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225 C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. V DS1 Document Number: MW7IC3825N Rev. 1, 11/2010 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR MHz, 5 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE TO -270 WB -16 PLASTIC MW7IC3825NR1 CASE TO -272 WB -16 PLASTIC MW7IC3825NBR1 GND V DS1 V GS2 V GS1 NC CASE TO -270 WB -16 GULL PLASTIC MW7IC3825GNR GND NC RF in V GS1 V GS2 Quiescent Current Temperature Compensation (1) Figure 1. Functional Block Diagram RF out /V DS2 (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family.Go to Documentation/Application Notes -- AN1977 or AN1987. RF in 6 NC 7 V GS1 8 V GS2 9 V DS1 10 GND RF out /V DS2 NC GND, Inc., 2008, All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DS --0.5, +65 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C Input Power P in 45 dbm Table 2. Thermal Characteristics Thermal Resistance, Junction to Case WiMAX Application (Case Temperature 71 C, P out = 5 W CW) Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Characteristic Symbol Value (2,3) Unit Test Methodology Charge Device Model (per JESD22--C101) Table 4. Moisture Sensitivity Level Stage 1, 28 Vdc, I DQ1 = 130 ma Stage 2, 28 Vdc, I DQ2 = 230 ma R θjc Class 1B (Minimum) A (Minimum) IV (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C/W Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D =25μAdc) Gate Quiescent Voltage (V DS =28Vdc,I DQ1 = 130 ma) Fixture Gate Quiescent Voltage (4) (V DD =28Vdc,I DQ1 = 130 ma, Measured in Functional Test) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN V GG =1.55xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) 2

3 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 120 μadc) Gate Quiescent Voltage (V DS =28Vdc,I DQ2 = 230 ma) Fixture Gate Quiescent Voltage (1) (V DD =28Vdc,I DQ2 = 230 ma, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =1Adc) Stage 2 - Dynamic Characteristics (2) Output Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc V DS(on) Vdc C oss 72.3 pf Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma, P out =5WAvg., f = 3600 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel ±8.5 MHz Offset. Power Gain G ps db Power Added Efficiency PAE % Output Peak--to--Average 0.01% Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma, P out = 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Relative Constellation Error (4) RCE db Error Vector Magnitude (4) EVM 2.2 %rms 1. V GG =1.22xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. 4. RCE = 20Log(EVM/100). (continued) 3

4 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 30 W IMD 2 W PEP, P out where IMD Third Order Intermodulation 30 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 83 MHz VBW res 90 MHz Gain Flatness in 200 MHz P out =5WAvg. G F 0.7 db Average Deviation from Linear Phase in 200 MHz out =25WCW Φ 3.15 Average Group P out = 25 W CW, f = 3500 MHz Delay 3.21 ns Part--to--Part Insertion Phase P out =25WCW, f = 3500 MHz, Six Sigma Window Gain Variation over Temperature (--30 C to+85 C) Output Power Variation over Temperature (--30 C to+85 C) Φ G db/ C P1dB db/ C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 = 190 ma, I DQ2 = 230 ma, P out = 0.5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel ±8.5 MHz Offset. Power Gain G ps 23.5 db Power Added Efficiency PAE 3.5 % Output Peak--to--Average 0.01% Probability on CCDF PAR 9.2 db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 4

5 RF INPUT Z1 C6 Z2 Z4 Z3 Z6 Z5 Z8 Z7 V D1 Z10 Z9 V G1 V G2 Z12 Z11 C1 C5 C7 C17 Z13 NC C15 C14 R1 R2 C NC V GS2 V GS1 NC V D1 DUT Quiescent Current Temperature Compensation NC NC C13 C9 V D2 + C4 C3 C2 C12 Z42 Z41 Z26 Z25 Z14 Z40 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z23 Z24 Z28 Z29 Z30 Z31 Z33 Z36 Z37 Z38 Z39 RF OUTPUT Z43 Z22 Z27 C8 Z32 Z34 Z35 Z44 Z45 C10 C11 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28 Z29 Z30 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x0.110 Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip Z x0.112 Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z41 L = wi = Angle = 130 Microstrip Z x Microstrip Z x Microstrip Z44 L = wi = Angle = 130 Microstrip Z x Microstrip PCB Taconic TLX , 0.020, ε r =2.55 Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic 5

6 Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C13, C μf, 50 V Chip Capacitors C3225X7R1H225M TDK C2, C3 10 μf, 50 V Chip Capacitors C5750X5R1H106M TDK C4, C5, C9, C pf Chip Capacitors ATC100B2R2BT500XT ATC C6, C7 0.5 pf Chip Capacitors ATC100B0R5BT500XT ATC C8 2 pf Chip Capacitor ATC100B2R0BT500XT ATC C11 33 pf Chip Capacitor ATC100B330JT500XT ATC C μf, 63 V Electrolytic Capacitor BC Components C15, C μf, 50 V Chip Capacitors C4532X5R1H475M TDK C pf Chip Capacitor ATC100B0R3BT500XT ATC R1, R2 1kΩ, 1/8 W Chip Resistors CRCW FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay V D1 V D2 C12 MW7IC3825N/NB Rev. 7 C2 C4 C3 C1 C5 C6 C15 R1 C14 C7 C17 C13 C9 CUT OUT AREA C10 C8 V G1 R2 V G2 C16 V D1 R3 C11 Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout 6

7 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) V DD =28Vdc,P out =5W(Avg.),I DQ1 = 130 ma, I DQ2 = 230 ma OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF G ps ACPR h D f, FREQUENCY (MHz) Figure 5. WiMAX Broadband P out = 5 Watts Avg. IRL PARC η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) G ps, POWER GAIN (db) V DD =28Vdc,P out =20dBm(Avg.),I DQ1 = 130 ma, I DQ2 = 230 ma OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF G ps ACPR f, FREQUENCY (MHz) Figure 6. WiMAX Broadband P out =20dBmAvg. h D IRL PARC η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) G ps, POWER GAIN (db) I DQ2 = 350 ma 290 ma 230 ma 175 ma V DD =28Vdc I DQ1 = 130 ma f = 3500 MHz ma G ps, POWER GAIN (db) I DQ1 = 195 ma 160 ma 130 ma 100 ma 70 ma V DD =28Vdc I DQ2 = 230 ma f = 3500 MHz P out, OUTPUT POWER (WATTS) CW P out, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output DQ1 = 130 ma Figure 8. Power Gain versus Output DQ2 = 230 ma 7

8 IMD, INTERMODULATION DISTORTION (dbc) IM3--L IM3--U TYPICAL CHARACTERISTICS V DD =28Vdc,P out = 2 W (PEP), I DQ1 = 130 ma I DQ2 = 230 ma, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 3500 MHz IM7--U IM7--L IM5--U IM5--L TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing G ps, POWER GAIN (db) PARC 1 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (db) PARC --1dB=6W G ps --2dB=8.5W V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma f = 3500 MHz, OFDM d 64 QAM 3 / 4,4Bursts MHz Channel Bandwidth, Input Signal --5 PAR = % Probability on CCDF P out, OUTPUT POWER (WATTS) Figure 10. Output Peak -to -Average Ratio Compression (PARC) versus Output Power η D ACPR --3 db = 11.5 W η D, DRAIN EFFICIENCY (%) ACPR (dbc) η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma f = 3500 MHz, OFDM d, 64 QAM 3 / 4 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF 85_C G ps T C =--30_C 25_C 85_C ACPR 10 25_C P out, OUTPUT POWER (WATTS) AVG. WiMAX --30_C --30_C 25_C 85_C ηd Figure 11. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power ACPR (dbc) 8

9 TYPICAL CHARACTERISTICS S21 (db) S S11 V DD =28Vdc I DQ1 = 130 ma, I DQ2 = 230 ma f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response S11 (db) MTTF (HOURS) st Stage 2nd Stage T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD =28Vdc,P out = 5 W Avg., and PAE = 15%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature 250 WIMAX TEST SIGNAL PROBABILITY (%) OFDM d, 64 QAM 3 / 4,4Bursts 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF Input Signal PEAK--TO--AVERAGE (db) Figure 14. OFDM d Test Signal 10 (db) ACPR in 1 MHz Integrated BW MHz Channel BW 0 ACPR in 1 MHz Integrated BW f, FREQUENCY (MHz) Figure 15. WiMAX Spectrum Mask Specifications 9

10 Z o =50Ω f = 3600 MHz Z load f = 3400 MHz f = 3400 MHz Z source f = 3600 MHz V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma, P out =5WAvg. f MHz Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j6.72 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance 10

11 Table 7. Common Source S -Parameters (V DD =28V,I DQ1 = 130 ma, I DQ2 = 230 ma, T A =25 C, 50 Ohm System) f MHz S 11 S 21 S 12 S 22 S 11 φ S 21 φ S 12 φ S 22 φ

12 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) P3dB = dbm (55.6 W) P1dB = dbm (46.3 W) Ideal Actual V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 3400 MHz P out, OUTPUT POWER (dbm) P3dB = dbm (51.5 W) P1dB = dbm (41.0 W) 19 Ideal V DD =28Vdc,I DQ1 = 130 ma, I DQ2 = 230 ma Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 3600 MHz Actual P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V Test Impedances per Compression Level Test Impedances per Compression Level Z source Ω Z load Ω Z source Ω Z load Ω P1dB j j8.5 P1dB j j8.3 Figure 17. Pulsed CW Output Power versus Input MHz Figure 18. Pulsed CW Output Power versus Input MHz 12

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22 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Nov Initial Release of Data Sheet 1 Nov Corrected data sheet to remove DC Block from On--chip Matching feature bullet and replaced with RF Choke to Ground, p. 1 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 3 Added RF Input Choke to Ground circuitry to Functional Block Diagram and Test Circuit Schematic, p. 1, 5 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p

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