RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz Suitable for analog and digital modulation and multipurpose amplifier applications Typical Two--Tone 2170 MHz: V DD =28Volts,I DQ = 130 ma, P out = 10 Watts PEP Power Gain 155 db Drain Efficiency 36% IMD --34 dbc Typical 2--Carrier W--CDMA Performance: V DD =28Volts,I DQ = 130 ma, P out = 1 Watt Avg, Full Frequency Band ( MHz), Channel Bandwidth = 384 MHz PAR = % Probability Power Gain 155 db Drain Efficiency 15% 10 MHz Offset --47 dbc in 384 MHz Channel Bandwidth 5 MHz Offset --49 dbc in 384 MHz Channel Bandwidth Typical Single--Carrier N--CDMA Performance: V DD =28Volts,I DQ = 130 ma, P out = 1 Watt Avg, Full Frequency Band ( MHz), IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = MHz PAR = % Probability on CCDF Power Gain 155 db Drain Efficiency 16% 885 khz Offset = --60 dbc in 30 khz Bandwidth Typical GSM EDGE Performance: V DD =28Volts,I DQ = 130 ma, P out = 4 Watts Avg, Full Frequency Band ( MHz) Power Gain 16 db Drain Efficiency 33% EVM 13% rms Capable of Handling 5:1 28 Vdc, 2000 MHz, 10 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel Document Number: MRF6S20010N Rev 4, 1/2014 MRF6S20010NR1 MRF6S20010GNR MHz, 10 W, 28 V GSM, GSM EDGE SINGLE N -CDMA 2xW-CDMA LATERAL N -CHANNEL RF POWER MOSFETs RF in /V GS TO PLASTIC MRF6S20010NR1 TO -270G -2 PLASTIC MRF6S20010GNR1 2 1 RFout /V DS Table 1 Maximum Ratings (Top View) Note: The backside of the package is the source terminal for the transistor Figure 1 Pin Connections Rating Symbol Value Unit Drain--Source Voltage V DSS --05, +68 Vdc Gate--Source Voltage V GS --05, +12 Vdc Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C 1 Continuous use at maximum temperature will affect MTTF 2 MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product, Inc, , , 2014 All rights reserved 1

2 Table 2 Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 78C, 1 W CW Case Temperature 79C, 10 W PEP, Two--Tone Test Table 3 ESD Protection Characteristics Characteristic Symbol Value (1,2) Unit Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4 Moisture Sensitivity Level R JC Class Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5 Electrical Characteristics (T A =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1A A IV C/W Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =68Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D =40Adc) Gate Quiescent Voltage (V DD =28Vdc,I D = 130 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =04Adc) Dynamic Characteristics (3) Output Capacitance (V DS =28Vdc 30 1 MHz, V GS =0Vdc) Reverse Transfer Capacitance (V DS =28Vdc 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =28Vdc,V GS =0Vdc 30 1 MHz) I DSS 10 Adc I DSS 1 Adc I GSS 500 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C oss 20 pf C rss 116 pf C iss 120 pf Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 130 ma, P out = 10 W PEP, f1 = 2170 MHz, f2 = MHz, Two--Tone Test Power Gain G ps db Drain Efficiency D % Intermodulation Distortion IMD dbc Input Return Loss IRL db 1 MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product 2 Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers Go to Select Documentation/Application Notes -- AN Part internally matched on input 4 Measurements made with device in straight lead configuration before any lead forming operation is applied Lead forming is used for gull wing (GN) parts (continued) 2

3 Table 5 Electrical Characteristics (T A =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical 2 -Carrier W -CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 130 ma, P out = 1 W Avg, f1 = MHz, f2 = MHz and f1 = MHz, f2 = MHz, 2--Carrier W--CDMA, 384 MHz Channel Bandwidth Carriers ACPR measured in 384 MHz Channel 5 MHz Offset IM3 measured in 384 MHz 10 MHz Offset PAR = % Probability on CCDF Power Gain G ps 155 db Drain Efficiency D 15 % Gain Flatness in 30 MHz P out =1WCW G F 03 db Intermodulation Distortion IM dbc Adjacent Channel Power Ratio ACPR dbc Typical N -CDMA Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 130 ma, P out =1WAvg, 1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, MHz Channel Bandwidth Carrier ACPR measured in 30 khz Channel 885 khz Offset PAR = % Probability on CCDF Power Gain G ps 155 db Drain Efficiency D 16 % Gain Flatness in 30 MHz P out =1WCW G F 03 db Adjacent Channel Power Ratio ACPR dbc Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 130 ma, P out = 4 W Avg, MHz, EDGE Modulation Power Gain G ps 16 db Drain Efficiency D 33 % Gain Flatness in 30 MHz P out =4WCW G F 03 db Error Vector Magnitude EVM 13 %rms Spectral Regrowth at 400 khz Offset SR dbc Spectral Regrowth at 600 khz Offset SR dbc 3

4 V BIAS R1 V SUPPLY + C11 R2 C1 C7 Z9 C3 C4 C5 RF INPUT Z1 R3 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z16 Z11 Z12 Z13 Z14 Z15 RF OUTPUT C2 DUT Z17 C6 C8 C9 C10 Z1, Z x 0480 Microstrip Z x 0765 Microstrip Z3, Z x 0340 x 0050 Taper Z x 0295 Microstrip Z x 0060 Microstrip Z x 0280 Microstrip Z x 0330 Microstrip Z x 0980 Microstrip Z x 0350 Microstrip Z x 0400 Microstrip Z x 0105 Microstrip Z x 0242 Microstrip Z x 0740 Microstrip Z16, Z x 1250 Microstrip PCB Taconic RF--35, 0030, r =35 Figure 2 MRF6S20010NR1 Test Circuit Schematic MHz Table 6 MRF6S20010NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 100 nf Chip Capacitor CDR33BX104AKYS Kemet C2, C6 47 pf Chip Capacitors ATC100B4R7CT500XT ATC C3, C7, C8 91 pf Chip Capacitors ATC100B9R1CT500XT ATC C4, C5, C9, C10 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C11 10 F, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet R1 1k, 1/4 W Chip Resistor CRCW FKEA Vishay R2 10 k, 1/4 W Chip Resistor CRCW FKEA Vishay R3 10, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay 4

5 C11 R2 C1 C3 C4 C5 R1 C7 R3 C2 C6 CUT OUT AREA MRF6S20010N, Rev 2 C8 C9 C10 Figure 3 MRF6S20010NR1 Test Circuit Component Layout MHz 5

6 TYPICAL CHARACTERISTICS MHz D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) G ps IRL V DD =28Vdc,P out = 10 W (PEP) I DQ = 130 ma, 100 khz Tone Spacing 2090 D IMD f, FREQUENCY (MHz) 2210 Figure 4 Two -Tone Wideband out = 10 Watts (PEP) IMD, INTERMODULATION DISTORTION (dbc) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) I DQ = 195 ma 1625 ma 130 ma 975 ma 65 ma V DD = 28 Vdc, f = 2170 MHz Two--Tone Measurements 100 khz Tone Spacing P out, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, f = 2170 MHz Two--Tone Measurements 100 khz Tone Spacing 975 ma I DQ =65mA 195 ma 130 ma P out, OUTPUT POWER (WATTS) PEP 1625 ma 30 Figure 5 Two -Tone Power Gain versus Output Power Figure 6 Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,I DQ = 130 ma f1 = 2170 MHz, f2 = MHz Two--Tone Measurements 5th Order 3rd Order 7th Order IMD, INTERMODULATION DISTORTION (dbc) rd Order V DD =28Vdc,P out = 10 W (PEP) I DQ = 130 ma, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2170 MHz 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 7 Intermodulation Distortion Products versus Output Power Figure 8 Intermodulation Distortion Products versus Tone Spacing 6

7 TYPICAL CHARACTERISTICS MHz P out, OUTPUT POWER (dbm) P3dB = 415 dbm (142 W) P1dB = 409 dbm (1226 W) V DD =28Vdc,I DQ = 130 ma Pulsed CW, 8 sec(on), 1 msec(off) f = 2170 MHz P in, INPUT POWER (dbm) 28 Ideal Actual 30 G ps, POWER GAIN (db) T C =--30_C 25_C 85_C V DD =28Vdc I DQ = 130 ma f = 2170 MHz 1 G ps D P out, OUTPUT POWER (WATTS) CW _C 25_C 85_C D DRAIN EFFICIENCY (%) Figure 9 Pulsed CW Output Power versus Input Power Figure 10 Power Gain and Drain Efficiency versus CW Output Power G ps, POWER GAIN (db) V DD =24V 28 V 32 V S21 (db) 27 6 V DD =28Vdc 18 P out = 10 W (PEP) S21 3 I DQ = 130 ma S11 (db) 11 I DQ = 130 ma f = 2170 MHz P out, OUTPUT POWER (WATTS) CW Figure 11 Power Gain versus Output Power --27 S f, FREQUENCY (MHz) Figure 12 Broadband Frequency Response 7

8 W -CDMA TYPICAL CHARACTERISTICS MHz G ps, POWER GAIN (db) V DD =28Vdc,P out =1W(Avg),I DQ = 130 ma 2--Carrier W--CDMA, 10 MHz Carrier Spacing 384 MHz Channel Bandwidth, PAR = % Probability(CCDF) f, FREQUENCY (MHz) 2180 G ps IM3 ACPR IRL Figure Carrier W -CDMA Broadband out =1WattAvg D D, DRAIN EFFICIENCY (%) IM3 (dbc), ACPR (dbc) IRL, INPUT RETURN LOSS (db) D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD =28Vdc,I DQ = 130 ma 42 f1 = 2165 MHz, f2 = 2175 MHz 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 384 MHz Channel Bandwidth, PAR = % Probability(CCDF) G ps T C =25_C D IM3 ACPR P out, OUTPUT POWER (WATTS) AVG Figure Carrier W -CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power --40 IM3 (dbc), ACPR (dbc) 8

9 W -CDMA TEST SIGNAL PROBABILITY (%) W--CDMA ACPR Measured in 384 MHz Channel 5 MHz Offset IM3 Measured in 384 MHz 10 MHz Offset PAR = % Probability on CCDF PEAK--TO--AVERAGE (db) Figure 15 CCDF W -CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single -Carrier Test Signal (db) MHz Channel BW IM3 in 384 MHz BW --ACPR in 384 MHz BW +ACPR in 384 MHz BW +IM3 in 384 MHz BW f, FREQUENCY (MHz) Figure 16 2-Carrier W-CDMA Spectrum 9

10 N -CDMA TYPICAL CHARACTERISTICS MHz V BIAS R1 V SUPPLY + C11 R2 C1 C7 Z7 C3 C4 C5 RF INPUT Z1 R3 Z2 Z3 Z4 Z5 Z6 Z8 Z17 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 RF OUTPUT C2 DUT Z18 C6 C8 C9 C10 Z x 0480 Microstrip Z x 0728 Microstrip Z x 0512 Microstrip Z x 0079 Microstrip Z5, Z x 0335 Microstrip Z x 0980 Microstrip Z x 0350 Microstrip Z x 0516 Microstrip Z x 0276 Microstrip Z x 0423 Microstrip Z x 0066 x 0089 Taper Z x 0182 Microstrip Z x 0263 Microstrip Z x0118 Microstrip Z x 0099 Microstrip Z17, Z x 1250 Microstrip PCB Taconic RF--35, 0030, r =35 Figure 17 MRF6S20010NR1 Test Circuit Schematic MHz Table 7 MRF6S20010NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 100 nf Chip Capacitor 12065C104KAT AVX C2, C6 47 pf Chip Capacitors ATC100B4R7BT500XT ATC C3, C7, C8 91 pf Chip Capacitors ATC100B9R1BT500XT ATC C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX R1, R2 10 k, 1/4 W Chip Resistors CRCW FKEA Vishay R3 10, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay 10

11 N -CDMA TYPICAL CHARACTERISTICS MHz C11 V DD R1 R2 C1 C7 R3 C3 C4 VGS C5 C2 C6 CUT OUT AREA C8 C9 C10 MRF6S20010N Rev 0 Figure 18 MRF6S20010NR1 Test Circuit Component Layout MHz 11

12 N -CDMA TYPICAL CHARACTERISTICS MHz G ps, POWER GAIN (db) V DD =28Vdc,P out =1W(Avg),I DQ = 500 ma N--CDMA IS--95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ACPR 1960 f, FREQUENCY (MHz) D G ps Figure 19 Single -Carrier N -CDMA Broadband out =1WattAvg IRL D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) D, DRAIN EFFICIENCY (%) V DD =28Vdc,I DQ = 130 ma f = 1960 MHz, N--CDMA IS (Pilot, Sync, Paging, Traffic Codes Through 13) ACPR D ACPR (dbc) P out, OUTPUT POWER (WATTS) AVG Figure 20 Single -Carrier N -CDMA ACPR and Drain Efficiency versus Output Power 12

13 N -CDMA TEST SIGNAL PROBABILITY (%) IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) MHz Channel Bandwidth Carriers ACPR Measured in 30 khz 885 khz Offset PAR = % Probability on CCDF PEAK--TO--AVERAGE (db) Figure 21 Single -Carrier CCDF N -CDMA 10 (db) MHz --20 Channel BW ACPR in 30 khz +ACPRin30kHz Integrated BW Integrated BW f, FREQUENCY (MHz) Figure 22 Single -Carrier N -CDMA Spectrum 13

14 GSM EDGE TYPICAL CHARACTERISTICS MHz V BIAS R1 V SUPPLY + C11 R2 C1 C7 Z9 C3 C4 C5 RF INPUT Z1 R3 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z17 Z11 Z12 Z13 Z14 Z15 Z16 RF OUTPUT C2 DUT Z18 C6 C8 C9 C10 Z1, Z x 0480 Microstrip Z x 0137 Microstrip Z x 0236 Microstrip Z x 0354 Microstrip Z x 0512 Microstrip Z x 0079 Microstrip Z x 0189 Microstrip Z x 0334 Microstrip Z x 0980 Microstrip Z x 0350 Microstrip Z x 0516 Microstrip Z x 0276 Microstrip Z x 0157 Microstrip Z x 0433 Microstrip Z x 0104 Microstrip Z17, Z x 1250 Microstrip PCB Taconic RF--35, 0030, r =35 Figure 23 MRF6S20010NR1 Test Circuit Schematic MHz Table 8 MRF6S20010NR1 Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1 100 nf Chip Capacitor 12065C104KAT AVX C2, C6 47 pf Chip Capacitors ATC100B4R7BT500XT ATC C3, C7, C8 91 pf Chip Capacitors ATC100B9R1BT500XT ATC C4, C5, C9, C10 10 F Chip Capacitors C5750X5R1H106MT TDK C11 10 F, 35 V Tantalum Chip Capacitor TAJD106K035R AVX R1, R2 10 k, 1/4 W Chip Resistors CRCW FKEA Vishay R3 10, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay 14

15 GSM EDGE TYPICAL CHARACTERISTICS MHz C11 V DD R1 R2 C1 C7 R3 C3 C4 VGS C5 C2 C6 CUT OUT AREA C8 C9 C10 MRF6S20010N Rev 0 Figure 24 MRF6S20010NR1 Test Circuit Component Layout MHz 15

16 GSM EDGE TYPICAL CHARACTERISTICS MHz G ps, POWER GAIN (db) G ps IRL D V DD =28Vdc I DQ = 130 ma f, FREQUENCY (MHz) Figure 25 Power Gain, Input Return Loss and Drain Efficiency versus P out = 4 Watts D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) EVM, ERROR VECTOR MAGNITUDE (% ms) V DD =28Vdc I DQ = 130 ma f = 1840 MHz D EVM 1 P out, OUTPUT POWER (WATTS) AVG Figure 26 Error Vector Magnitude and Drain Efficiency versus Output Power D, DRAIN EFFICIENCY (%) GSM EDGE TEST SIGNAL SPECTRAL REGROWTH (dbc) V DD =28Vdc I DQ = 130 ma f = 1840 MHz 400 khz 600 khz (db) Reference Power 600 khz 400 khz VBW = 30 khz Sweep Time = 70 ms RBW = 30 khz 400 khz 600 khz Center 196 GHz 200 khz Span 2 MHz P out, OUTPUT POWER (WATTS) Figure 27 Spectral Regrowth at 400 khz and 600 khz versus Output Power Figure 28 EDGE Spectrum 16

17 Z o = MHz V DD =28Vdc,I DQ = 130 ma, P out = 10 W PEP f MHz Z source Z load f = 2170 MHz j j3068 Z load j j3291 f = 2110 MHz j j3406 f = 2170 MHz f = 2110 MHz Z source Z o = MHz V DD =28Vdc,I DQ = 130 ma, P out =1WAvg Z load f = 1990 MHz f MHz 1930 Z source j1849 Z load j3497 f = 1930 MHz f = 1930 MHz f = 1990 MHz Z source j j j j3833 Z o =25 V DD =28Vdc,I DQ = 130 ma, P out =4WAvg f MHz 1800 MHz Z source Z load Z load f = 1880 MHz f = 1805 MHz f = 1805 MHz Z source f = 1880 MHz j j j j j j4170 Z source = Test circuit impedance as measured from gate to ground Z load = Test circuit impedance as measured from drain to ground Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 29 Series Equivalent Source and Load Impedance 17

18 Table 9 Common Source Scattering Parameters (V DD =28V,I DQ = 126 ma, T A =25C, 50 ohm system) f S 11 S 21 S 12 S 22 MHz S 11 S 21 S 12 S (continued) 18

19 Table 9 Common Source Scattering Parameters (V DD =28V,I DQ = 126 ma, T A =25C, 50 ohm system) (continued) f MHz S 11 S 21 S 12 S 22 S 11 S 21 S 12 S

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26 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software and Tools, do a Part Number search at and select the Part Number link Go to the Software & Tools tab on the part s Product Summary page to download the respective tool The following table summarizes revisions to this document REVISION HISTORY Revision Date Description 2 Dec 2008 Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p 1 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p 1 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related Continuous use at maximum temperature will affect MTTF footnote added and changed 200C to 225C in Capable Plastic Package bullet, p 1 Corrected V DS to V DD in the RF test condition voltage callout for V GS(Q), On Characteristics table, p 2 Corrected C iss test condition to indicate AC stimulus on the V GS connection versus the V DS connection, Dynamic Characteristics table, p 2 Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part numbers, p 4, 10, 14 Adjusted scale for Fig 7, Intermodulation Distortion Products versus Tone Spacing, to better match the device s capabilities, p 6 Removed lower voltage tests from Fig 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p 7 Replaced Fig 12, MTTF versus Junction Temperature with updated graph Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p 7 Removed ALT1 definition from Fig 21, Single--Carrier CCDF N--CDMA, given no supporting performance information provided, p 13 Replaced Case Outline with , Issue K, p 1, Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min--Max to 290 Min; E3 changed from Min--Max to 150 Min) Added JEDEC Standard Package Number Replaced Case Outline 1265A--02 with 1265A--03, Issue C, p 1, Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min--Max to 290 Min; E3 changed from Min--Max to 150 Min) Added pin numbers Corrected mm dimension L for gull--wing foot from Min--Max to Min--Max Added JEDEC Standard Package Number Added Product Documentation and Revision History, p 26 3 June 2009 Corrected decimal placement for C iss (changed 012 pf to 120 pf) and C oss (changed 002 pf to 20 pf), Dynamic Characteristics table, p 2 Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p 2 Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to Product Documentation, Application Notes, p 26 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p 26 (continued) 26

27 REVISION HISTORY (cont) Revision Date Description 4 Jan 2014 Table 2 Thermal Characteristics: CW thermal value changed from 25 to 23C/W to reflect recent thermal test results; two--tone test W PEP thermal value changed from 59 to 29C/W to reflect recent thermal test results Thermal value changes are based on an improvement in the RF feedback resistor design, p 2 Table 3, ESD Protection Characteristics, removed the word Minimum after the ESD class rating ESD ratings are characterized during new product development but are not 100% tested during production ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p 2 Fig 12, MTTF versus Junction Temperature removed, p 7 Refer to the device s MTTF Calculator available at freescalecom/rfpower Go to Design Resources > Software and Tools 27

28 How to Reach Us: Home Page: freescalecom Web Support: freescalecom/support Information in this document is provided solely to enable system and software implementers to use Freescale products There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document Freescale reserves the right to make changes without further notice to any products herein Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time All operating parameters, including typicals, must be validated for each customer application by customer s technical experts Freescale does not convey any license under its patent rights nor the rights of others Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescalecom/salestermsandconditions Freescale and the Freescale logo are trademarks of, Inc, Reg US Pat & Tm Off All other product or service names are the property of their respective owners E , , 2014, Inc Document Number: MRF6S20010N 28 Rev 4, 1/2014