RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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1 Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. MRFE6VP5300NR1 MRFE6VP5300GNR MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: V DD =50Vdc Frequency (MHz) Signal Type P out (W) G ps (db) D (%) (1,3) CW (2) CW TO -270WB -4 PLASTIC MRFE6VP5300NR1 230 (2) Pulse (100 sec, 20% Duty Cycle) 300 Peak Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR 98 (1) CW > 65:1 at all Phase Angles P in (W) 3 (3 db Overdrive) Test Voltage Result 50 No Device Degradation TO -270WBG -4 PLASTIC MRFE6VP5300GNR1 230 (2) Pulse (100 sec, 20% Duty Cycle) 1.16 Peak (3 db Overdrive) 1. Measured in MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. Features Gate A Gate B 3 2 Drain A 4 1 Drain B Wide Operating Frequency Range Extreme Ruggedness Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated Stability Enhancements Low Thermal Resistance Integrated ESD Protection Circuitry In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections, All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 0.5, +133 Vdc Gate--Source Voltage V GS 6.0, +10 Vdc Storage Temperature Range T stg 65 to +150 C Case Operating Temperature Range T C 40 to +150 C Operating Junction Temperature Range (1,2) T J 40 to +225 C Total Device T C =25C Derate above 25C Table 2. Thermal Characteristics P D W W/C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 81C, 305 W CW, 50 Vdc, I DQ(A+B) = 100 ma, 230 MHz Thermal Impedance, Junction to Case Pulse: Case Temperature 59C, 300 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, I DQ(A+B) = 100 ma, 230 MHz Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Test Methodology Charge Device Model (per JESD22--C101) Table 4. Moisture Sensitivity Level R JC 0.22 C/W Z JC C/W Class 2, passes 2500 V A, passes 150 V IV, passes 2000 V Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (4) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) I GSS 1 Adc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mA) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 100 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 960 Adc) Gate Quiescent Voltage (V DD =50Vdc,I D = 100 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =2Adc) V (BR)DSS Vdc I DSS 5 Adc I DSS 10 Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) 0.26 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Each side of device measured separately. (continued) 2

3 Table 5. Electrical Characteristics (T A =25C unless otherwise noted) (continued) Dynamic Characteristics (1) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (V DS =50Vdc 30 1 MHz, V GS =0Vdc) C rss 1.4 pf Output Capacitance (V DS =50Vdc 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =50Vdc,V GS =0Vdc 30 1 MHz) C oss 63 pf C iss 168 pf Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) V DD =50Vdc,I DQ(A+B) = 100 ma, P out = 300 W Peak (60 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain G ps db Drain Efficiency D % Input Return Loss IRL 20 9 db Table 6. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) I DQ(A+B) = 100 ma Frequency (MHz) Signal Type VSWR 230 Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles P in (W) Test Voltage, V DD Result 1.16 Peak 50 No Device Degradation (3 db Overdrive) 1. Each side of device measured separately. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 3

4 TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) Measured with 30 1 MHz V GS =0Vdc C iss C oss C rss V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain -Source Voltage NORMALIZED V GS(Q) ma V DD =50Vdc 1.04 I DQ(A+B) = 100 ma ma ma T C, CASE TEMPERATURE (C) I DQ (ma) Slope (mv/c) Figure 3. Normalized V GS versus Quiescent Current and Case Temperature I D =6.38Amps V DD =50Vdc MTTF (HOURS) Amps 9.61 Amps T J, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature - CW 250 4

5 230 MHz NARROWBAND PRODUCTION TEST FIXTURE C3 C5 B1 C7 MRFE6VP5300N Rev. 2 C23 C21 C27 C29 C1 COAX1 L1 C11 D49840 C19 L4 C25 COAX3 C9 C13 C14 C16 C17 C2 COAX2 L2 C10 C12 L3 CUT OUT AREA C20 L5 C26 C15 COAX4 C18 B2 C8 C22 C24 C28 C30 C4 C6 Figure 5. MRFE6VP5300NR1 Narrowband Test Circuit Component Layout 230 MHz 5

6 230 MHz NARROWBAND PRODUCTION TEST FIXTURE Table 7. MRFE6VP5300NR1 Narrowband Test Circuit Component Designations and Values 230 MHz Part Description Part Number Manufacturer B1, B2 Small Ferrite Beads, Surface Mount Fair-Rite C1, C2 22 F, 35 V Tantulum Capacitors T491X226K035AT Kemet C3, C4 0.1 F Chip Capacitors CDR33BX104AKWS AVX C5, C6 220 nf Chip Capacitors C1812C224K5RACTU Kemet C7, C8 2.2 F Chip Capacitors C1825C225J5RACTU Kemet C9, C10, C11, C pf Chip Capacitors ATC100B102JT50XT ATC C13 75 pf Chip Capacitor ATC100B750JT500XT ATC C14, C pf Chip Capacitors ATC100B681JT200XT ATC C16 82 pf Chip Capacitor ATC100B820JT500XT ATC C pf Chip Capacitor ATC100B8R2CT500XT ATC C18 11 pf Chip Capacitor ATC100B110JT500XT ATC C19, C pf Chip Capacitors ATC100B241JT200XT ATC C21, C F Chip Capacitors C1812F104K1RACTU Kemet C23, C F Chip Capacitors CDR33BX104AKWS AVX C25, C F Chip Capacitors 2225X7R225KJT3AB ATC C27, C28, C29, C F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.4 UT-141C-25 Micro-Coax L1, L2 12 nh Inductors, 3 Turns GA3094-ALC Coilcraft L3 22 nh Inductor 1812SMS-22NJLC Coilcraft L4, L nh Inductors, 4 Turns GA3095-ALC Coilcraft PCB Arlon AD255A 0.030, r =2.55 D49840 MTL 6

7 V GG RF INPUT Z1 V GG + B1 C19 C21 C23 C25 C27 + L4 V + DD C29 C1 C3 C5 C7 L1 Z18 COAX1 COAX3 Z8 C11 Z16 Z6 Z14 Z20 Z22 Z24 Z26 Z2 Z4 Z10 Z12 C14 C9 Z28 L3 DUT C13 C16 Z3 Z5 Z11 Z13 Z29 C17 C10 Z15 Z21 Z23 Z25 Z27 Z7 C12 C15 Z9 COAX2 Z17 COAX4 L2 Z19 B2 + L5 C2 C4 C6 C8 V + + DD C20 C22 C24 C26 C28 C30 Figure 6. MRFE6VP5300NR1 Narrowband Test Circuit Schematic 230 MHz Table 8. MRFE6VP5300NR1 Narrowband Test Circuit Microstrips 230 MHz Microstrip Description Microstrip Description Microstrip Description Z Microstrip Z2, Z Microstrip Z4, Z Microstrip Z6*, Z7* Microstrip Z8, Z Microstrip Z10, Z Microstrip Z12, Z Microstrip Z14, Z Microstrip Z16, Z Microstrip Z18, Z Microstrip Z20, Z Microstrip Z22, Z Microstrip Z24, Z Microstrip Z26, Z Microstrip Z Microstrip Z Microstrip Z Microstrip * Line length include microstrip bends Z30 C18 RF OUTPUT 7

8 TYPICAL CHARACTERISTICS 230 MHz P out, OUTPUT POWER (WATTS) PEAK V DD = 50 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle P in =0.64W P in =0.32W V GS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. Output Power versus Gate -Source Voltage at a Constant Input Power P out, OUTPUT POWER (dbm) PEAK V DD =50Vdc,I DQ(A+B) = 100 ma, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle P in, INPUT POWER (dbm) G ps, POWER GAIN (db) V DD =50Vdc,I DQ(A+B) = 100 ma, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle I DQ(A+B) = 900 ma 300 ma 600 ma ma 900 ma G ps ma ma 300 ma P out, OUTPUT POWER (WATTS) PEAK D D, DRAIN EFFICIENCY (%) f (MHz) P1dB (W) P3dB (W) Figure 9. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 8. Output Power versus Input Power G ps, POWER GAIN (db) 30 V DD =50Vdc,I DQ(A+B) = 100 ma, f = 230 MHz --40_C Pulse Width = 100 sec, 20% Duty Cycle _C 85_C T C =--40_C 25_C D P out, OUTPUT POWER (WATTS) PEAK 85_C Figure 10. Power Gain and Drain Efficiency versus CW Output Power G ps D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD =30V 35 V 40 V 45 V 50 V I DQ(A+B) = 100 ma, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle P out, OUTPUT POWER (WATTS) PEAK Figure 11. Power Gain versus Output Power and Drain -Source Voltage 8

9 230 MHz NARROWBAND PRODUCTION TEST FIXTURE V DD =50Vdc,I DQ(A+B) = 100 ma, P out = 300 W Peak f MHz Z source Z load j j6.90 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. 50 Input Matching Network + Device Under Test -- Output Matching Network Z source Z load Figure 12. Narrowband Series Equivalent Source and Load Impedance 230 MHz 9

10 MHz BROADBAND REFERENCE CIRCUIT Table MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) V DD =50Vdc,I DQ(A+B) = 100 ma, P in =1.5W,CW Frequency (MHz) G ps (db) D (%) P out (W) Table 10. Load Mismatch/Ruggedness (In Freescale Reference Circuit, 50 ohm system) I DQ(A+B) = 100 ma Frequency (MHz) Signal Type VSWR 98 CW > 65:1 at all Phase Angles P in (W) Test Voltage, V DD Result 3 (3 db Overdrive) 50 No Device Degradation 10

11 MHz BROADBAND REFERENCE CIRCUIT D59349 C3* R6* R5* R4* R8 R7* R3* C1* U1* COAX1 R11* R10* C13 C12 C14 C15 + C16 C4 C2* R1* R2* U2* C11 C6 T1 R9 Q1 C5 C17 L1 C8 C9 C7 COAX3 MRFE6VP5300N Rev. 1 COAX2 Note: Component number C10 is not used. * Bias Regulator and Temperature Compensation. Refer to AN1643, RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit. Go to Select Documentation/Application Notes AN1643. Figure 13. MRFE6VP5300NR1 Broadband Reference Circuit Component Layout MHz 11

12 MHz BROADBAND REFERENCE CIRCUIT Table 11. MRFE6VP5300NR1 Broadband Reference Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1, C2 1 F Chip Capacitors GRM31CR72A105KA01L Murata C3 10 nf Chip Capacitor ATC200B103KT50XT ATC C4 150 pf Chip Capacitor ATC100B151JT300XT ATC C5 20 pf Chip Capacitor ATC100B200JT500XT ATC C6, C8, C pf Chip Capacitors ATC200B102KT50XT ATC C7 560 pf Chip Capacitor ATC100B561KT50XT ATC C11 10 nf Chip Capacitor GCJ216R72A103KA01D Murata C12 47 nf Chip Capacitor GCJ21BR72A473KA01L Murata C nf Chip Capacitor GRM31MR72A474KA01L Murata C14, C15 10 F Chip Capacitors C5750X7S2A106M230KB TDK C F, 63 V Electrolytic Capacitor MCGPR63V477M13X26 Multicomp C17 20 pf Chip Capacitor ATC100B200JT500XT ATC Coax1, 2 35 Flex Cable, 4.72 HSF-141 Hongsen Cable Coax3 50 Flex Cable, 6.3 SM141 Huber Suhner L1 5 Turns, #16 AWG ID = 0.315/8 mm Inductor, Hand Wound Copper Wire Q1 RF Power LDMOS Transistor MRFE6VP5300NR1 Freescale R1 2.2 k, 1/8 W Chip Resistor CRCW08052K20FKEA Vishay R2 390, 1/8 W Chip Resistor CRCW RFKEA Vishay R3 10, 1/8 W Chip Resistor CRCW080510R0FKEA Vishay R4 1.0 k, 1/8 W Chip Resistor CRCW08051K00FKEA Vishay R5 2.7 k, 1/8 W Chip Resistor CRCW08052K70FKEA Vishay R6 200, 1/8 W Chip Resistor CRCW RFKEA Vishay R7 5.0 k Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns R8 10, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay R9 240, 1/4 W Chip Resistor CRCW RFKEA Vishay R k, 1/2 W Chip Resistor CRCW12104K70FKEA Vishay R k, 1/2 W Chip Resistor CRCW12105K10FKEA Vishay T1 61 Material Binocular Core Ferrite (9:1) with 24 AWG 1 Turn Primary, 24 AWG 3 Turns Secondary, Hand Wound Fair-Rite U1 Voltage Regulator 5 V, Micro8 LP2951ACDMR2G ON Semiconductor U2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor PCB Rogers RO4350B, 0.030, r =3.66 D59349 MTL Note: Component number C10 is not used. 12

13 RF INPUT Z1 C4 Z2 R8 Z3 Z4 Z5 Bias Regulator and Temperature Compensation Z7 Z9 Z11 COAX1 Z13 L1 Z15 C11 C12 Z16 C8 Z18 C13 C14 C15 + C16 COAX3 Z20 V DD T1 R9 DUT C5 C17 Z14 C6 C7 Z6 Z8 Z10 Z12 COAX2 Z17 C9 Z19 Note: Component number C10 is not used. Figure 14. MRFE6VP5300NR1 Broadband Reference Circuit Schematic MHz Table 12. MRFE6VP5300NR1 Broadband Reference Circuit Microstrips MHz Microstrip Description Microstrip Description Z Microstrip Z2* Microstrip Z3* Microstrip Z Microstrip Z5, Z Microstrip Z7, Z Microstrip Z9, Z Microstrip Z11, Z Microstrip Z13, Z Microstrip Z Microstrip Z16*, Z17* Microstrip Z18, Z Microstrip Z Microstrip * Line length includes microstrip bends RF OUTPUT 13

14 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) V DD =50Vdc,P in =1.5W,I DQ(A+B) = 100 ma f, FREQUENCY (MHz) Figure 15. Power Gain, Drain Efficiency and CW Output Power versus Frequency at a Constant Input Power D G ps P out D, DRAIN EFFICIENCY (%) P out,output POWER (WATTS) P out, OUTPUT POWER (WATTS) V DD =50Vdc P in =0.5W f=98mhz 87.5 MHz 108 MHz V GS, GATE--SOURCE VOLTAGE (VOLTS) Figure 16. CW Output Power versus Gate -Source Voltage at a Constant Input Power P out, OUTPUT POWER (WATTS) V DD =50Vdc P in =1.0W f=98mhz 87.5 MHz V GS, GATE--SOURCE VOLTAGE (VOLTS) 108 MHz Figure 17. CW Output Power versus Gate -Source Voltage at a Constant Input Power 14

15 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT V DD =50Vdc l DQ(A+B) = 100 ma P out, OUTPUT POWER (dbm) f=98mhz 87.5 MHz 108 MHz P in, INPUT POWER (dbm) f (MHz) P1dB (W) P3dB (W) Figure 18. CW Output Power versus Input Power G ps, POWER GAIN (db) V DD =50Vdc D 28 l DQ(A+B) = 100 ma 80 f=98mhz MHz 108 MHz MHz MHz G ps MHz 30 D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) Figure 19. Power Gain and Drain Efficiency versus CW Output Power 15

16 MHz BROADBAND REFERENCE CIRCUIT Z o =25 Z source f = 87.5 MHz f = 108 MHz f = 87.5 MHz Z load f = 108 MHz V DD =50Vdc,I DQ(A+B) = 100 ma, P out = 300 W CW f MHz Z source Z load j j j j j j j j j j j j7.89 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. 50 Input Matching Network + Device Under Test -- Output Matching Network Z source Z load Figure 20. Broadband Series Equivalent Source and Load Impedance MHz 16

17 HARMONIC MEASUREMENTS MHz BROADBAND REFERENCE CIRCUIT Sweep 10 of Fundamental (F1) H H3 H4 F1 100 MHz H2 200 MHz db H3 300 MHz db H4 400 MHz db H5 500 MHz db H sps fps H2 (200 MHz) H3 (300 MHz) H4 (400 MHz) H5 (500 MHz) 45.2 db 17.7 db 52.9 db 29.0 db Center: 300 MHz Span: 600 MHz Figure MHz 300 W CW 17

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24 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1643: RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Mar Initial Release of Data Sheet 1 June 2014 Typical Performance table, MHz: updated output power, gain and eff. values to reflect performance of circuit, p. 1 Functional Tests table, narrowband circuit: corrected output power from (30 W Avg.) to (60 W Avg.), p. 3 Table 9, MHz Reference Circuit Broadband Performance table: updated all values to reflect performance of circuit, p. 10 Fig. 13, Broadband Reference Circuit Component Layout MHz: updated layout to increase easeofuse,p.11 Table 11, Broadband Reference Circuit Component Designations and Values MHz: updated R2 and R11 resistors, p. 12 Fig. 14, Broadband Reference Circuit Schematic MHz: updated schematic to reflect temperature compensation, p

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