RF LDMOS Wideband Integrated Power Amplifier

Transcription

1 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MMRF2004NB wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 to 2700 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. Typical WiMAX Performance: V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, P out = 4 W Avg., f = 2700 MHz, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Power Gain 28.5 db Power Added Efficiency 17% Device Output Signal PAR % Probability on CCDF 8.5 MHz Offset --50 dbc in 1 MHz Channel Bandwidth Driver Applications Typical WiMAX Performance: V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, P out = 26 dbm Avg., f = 2700 MHz, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Power Gain 27.8 db Power Added Efficiency 3.2% Device Output Signal PAR % Probability on CCDF 8.5 MHz Offset --56 dbc in 1 MHz Channel Bandwidth Capable of Handling 10:1 32 Vdc, 2600 MHz, 40 W CW Output Power (3 db Input Overdrive from Rated P out ) Stable into a 5:1 VSWR. All Spurs Below mw to 5 W CW P out Typical P 1 db Compression Point 25 W CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225 C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. Document Number: MMRF2004NB Rev. 0, 12/ MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER TO -272WB -16 PLASTIC V DS1 GND V DS1 RF in GND RF out /V DS2 RF in V GS1 V GS2 V DS1 Quiescent Current Temperature Compensation (1) Figure 1. Functional Block Diagram RF out /V DS2 7 V GS1 8 V GS2 9 V DS1 10 GND GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to Select Documentation/Application Notes -- AN1977 or AN1987., All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DS --0.5, +65 Vdc Gate--Source Voltage V GS --0.5, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1) T J 225 C Input Power P in 22 dbm Table 2. Thermal Characteristics Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case R JC C/W WiMAX Application (Case Temperature 75 C, P out = 4 W Avg.) CW Application (Case Temperature 81 C, P out = 25 W CW) Stage 1, 28 Vdc, I DQ1 =77mA Stage 2, 28 Vdc, I DQ2 = 275 ma Stage 1, 28 Vdc, I DQ1 =77mA Stage 2, 28 Vdc, I DQ2 = 275 ma Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D =20 Adc) Gate Quiescent Voltage (V DS =28Vdc,I DQ1 =77mA) Fixture Gate Quiescent Voltage (V DD =28Vdc,I DQ1 = 77 madc, Measured in Functional Test) I DSS 10 Adc I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955. (continued) 2

3 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D =80 Adc) Gate Quiescent Voltage (V DS =28Vdc,I DQ2 = 275 madc) Fixture Gate Quiescent Voltage (V DD =28Vdc,I DQ2 = 275 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D = 800 madc) Stage 2 - Dynamic Characteristics (1) Output Capacitance (V DS =28Vdc 30 1 MHz, V GS =0Vdc) I DSS 10 Adc I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc V DS(on) Vdc C oss 111 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, P out = 4 W Avg., f = 2700 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel 8.5 MHz Offset. Power Gain G ps db Power Added Efficiency PAE % Output Peak--to--Average 0.01% Probability on CCDF PAR 9 db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc, I DQ1 =77mA,I DQ2 = 275 ma, P out = 4 W Avg., f = 2700 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Relative Constellation Error (2) RCE db Error Vector Magnitude (2) EVM 2.2 %rms 1. Part internally matched both on input and output. (continued) 2. RCE = 20Log(EVM/100) 3

4 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 25 W IMD 27 W PEP, P out where IMD Third Order Intermodulation 30 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 50 MHz VBW res 90 MHz Gain Flatness in 200 MHz P out =4WAvg. G F 0.5 db Average Deviation from Linear Phase in 200 MHz out =25WCW 2.1 Average Group P out = 25 W CW, f = 2600 MHz Delay 2.3 ns Part--to--Part Insertion Phase P out =25WCW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature (--30 C to+85 C) Output Power Variation over Temperature (--30 C to+85 C) 22 G db/ C P1dB dbm/ C Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, P out =26dBmAvg., f = 2700 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel 8.5 MHz Offset. Power Gain G ps 27.8 db Power Added Efficiency PAE 3.2 % Output Peak--to--Average 0.01% Probability on CCDF PAR 9 db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Relative Constellation P out =1.25WAvg. (1) RCE db 1. RCE = 20Log(EVM/100) 4

5 V DD1 V D2 B1 28 V C17 C16 C9 C15 C8 C7 C14 RF INPUT Z1 Z2 Z3 C4 C5 C6 Z4 C DUT Quiescent Current Temperature Compensation Z5 Z6 C13 Z7 Z8 C10 Z9 C12 Z10 Z11 C11 Z13 Z12 Z14 RF OUTPUT V G1 V G2 R4 R5 R6 R1 R2 R3 C2 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x x Taper x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z13* x Microstrip Z x Microstrip PCB Rogers R04350B, , r =3.48 * Line length includes microstrip bends Figure 3. Test Circuit Schematic Table 6. Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47, 100 MHz Short Ferrite Bead Fair--Rite C1, C4, C7, C12, C pf Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 10 nf Chip Capacitors C0603C103J5RAC Kemet C3, C6, C9, C14 1 F, 50 V Chip Capacitors GRM32RR71H105KA01B Murata C pf Chip Capacitor ATC600S2R4BT250XT ATC C pf Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata R1, R4 12 K, 1/4 W Chip Resistors CRCW FKEA Vishay R2, R3, R5, R6 1K, 1/4 W Chip Resistors CRCW FKEA Vishay 5

6 B1 C17 C8 C7 C9 C15 C14 C13 C16 C12 V G1 C5 C1 R4 R5 R6 R1 R2 R3 C4 C6 C3 C2 CUT OUT AREA C10 C11 V G2 Figure 4. Test Circuit Component Layout 6

7 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) PAE G ps V DD =28Vdc,P out =4W(Avg.),I DQ1 =77mA,I DQ2 = 275 ma OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF ACPR PARC IRL f, FREQUEY (MHz) Figure 5. WiMAX Broadband P out = 4 Watts Avg PAE, POWER ADDED EFFICIEY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) G ps, POWER GAIN (db) G ps ACPR PARC PAE V DD =28Vdc,P out =26dBm(Avg.),I DQ1 =77mA,I DQ2 = 275 ma OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF IRL f, FREQUEY (MHz) Figure 6. WiMAX Broadband P out =26dBmAvg PAE, POWER ADDED EFFICIEY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) G ps, POWER GAIN (db) ma 275 ma 206 ma 137 ma 1 I DQ2 = 412 ma V DD =28Vdc I DQ1 =77mA f = 2600 MHz 10 P out, OUTPUT POWER (WATTS) CW 100 G ps, POWER GAIN (db) ma 58 ma 39 ma 96 ma I DQ1 = 103 ma 1 V DD =28Vdc I DQ2 = 275 ma f = 2600 MHz 10 P out, OUTPUT POWER (WATTS) CW 100 Figure 7. Power Gain versus Output DQ1 =77 ma Figure 8. Power Gain versus Output DQ2 = 275 ma 7

8 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 27 W (PEP), I DQ1 =77mA I DQ2 = 275 ma, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz --30 IM3--U IM3--L IM5--L --40 IM5--U --50 IM7--L IM7--U TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing G ps, POWER GAIN (db) OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (db) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma f = 2600 MHz, OFDM d, 64 QAM 3 / 4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF PAE --1 db = 4.01 W --2 db = 6.21 W --3 db = 8.59 W ACPR PARC P out, OUTPUT POWER (WATTS) Figure 10. Output Peak -to -Average Ratio Compression (PARC) versus Output Power G ps PAE, POWER ADDED EFICIEY (%) ACPR (dbc) PAE, POWER ADDED EFFICIEY (%), G ps, POWER GAIN (db) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma f = 2600 MHz, OFDM d, 64 QAM 3 / 4,4Bursts 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF P out, OUTPUT POWER (WATTS) AVG. WiMAX Figure 11. WiMAX, ACPR, Power Gain and Power Added Efficiency versus Output Power _C 25_C 85_C 85_C _C 25 85_C --40_C --35 T C =--40_C 25_C G ps PAE ACPR ACPR (dbc) 8

9 TYPICAL CHARACTERISTICS S S21 (db) V DD =28Vdc I DQ1 =77mA,I DQ2 = 275 ma S f, FREQUEY (MHz) Figure 12. Broadband Frequency Response S11 (db) 9

10 WIMAX TEST SIGNAL PROBABILITY (%) OFDM d, 64 QAM 3 / 4,4Bursts 10 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF Input Signal PEAK--TO--AVERAGE (db) Figure 13. OFDM d Test Signal 10 (db) ACPR in 1 MHz Integrated BW MHz Channel BW 0 ACPR in 1 MHz Integrated BW f, FREQUEY (MHz) Figure 14. WiMAX Spectrum Mask Specifications 10

11 Z o =50 f = 2700 MHz f = 2700 MHz Z load f = 2500 MHz Z source f = 2500 MHz V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma, P out =4WAvg. f MHz Z source Z load j j j j j j j j j j j j j j j j j j1.164 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance 11

12 Table 7. Common Source S -Parameters (V DD =28V,I DQ1 =77mA,I DQ2 = 275 ma, T A =25 C, 50 Ohm System) f MHz S 11 S 21 S 12 S 22 S 11 S 21 S 12 S (continued) 12

13 Table 7. Common Source S -Parameters (V DD =28V,I DQ1 =77mA,I DQ2 = 275 ma, T A =25 C, 50 Ohm System) (continued) f MHz S 11 S 21 S 12 S 22 S 11 S 21 S 12 S

14 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) P1dB = dbm (29 W) 6 P3dB = dbm (36 W) V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2500 MHz Ideal Actual P out, OUTPUT POWER (dbm) P3dB = dbm (35 W) P1dB = dbm (28 W) Ideal Actual V DD =28Vdc,I DQ1 =77mA,I DQ2 = 275 ma Pulsed CW, 10 sec(on), 10% Duty Cycle, f = 2700 MHz P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V Test Impedances per Compression Level Test Impedances per Compression Level Z source Z load Z source Z load P1dB j j1.63 P1dB j j1.66 Figure 16. Pulsed CW Output Power versus Input MHz Figure 17. Pulsed CW Output Power versus Input MHz 14

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18 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec Initial Release of Data Sheet 18

19 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013 Document RF Device Number: Data MMRF2004NB Rev. 0, Freescale 12/2013 Semiconductor, Inc. 19