RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 25 MHz. Typical Performance (UHF Reference Circuit): V DD =50Volts, I DQ = 450 ma, 64 QAM, Input Signal PAR = % Probability on CCDF. Signal Type P out (W) f (MHz) G ps (db) D (%) Output Signal PAR (db) IMD Shoulder (dbc) DVB--T (8k OFDM) 8 Avg Document Number: MRF6VP309N Rev. 2, /5 MRF6VP309N MRF6VP309NB MHz, 90 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORS Typical Performance (L--Band MHz Circuit): V DD =50Volts, I DQ = 0 ma. Signal Type P out (W) f (MHz) P in (W) G ps (db) D (%) TO -270WB -4 PLASTIC MRF6V3090N Pulse (28 sec, % Duty Cycle) 90 Peak Features Capable of Handling : VSWR, All Phase 50 Vdc, 860 MHz, 90 Watts CW Output Power Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Input Matched for Ease of Use Qualified Up to a Maximum of 50 V DD Operation Excellent Thermal Stability Device can be used Single--Ended or in a Push--Pull Configuration Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Gate Gate 2 TO -272WB -4 PLASTIC MRF6V3090NB PARTS ARE PUSH -PULL Drain Drain 2 (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure. Pin Connections,, 5. All rights reserved.

2 Table. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +5 Vdc Gate--Source Voltage V GS --6.0, + Vdc Storage Temperature Range T stg --65 to +50 C Case Operating Temperature T C 50 C Operating Junction Temperature (,2) T J 225 C Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 76 C, 8 W CW, 50 Vdc, I DQ = 350 ma, 860 MHz Case Temperature 80 C, 90 W CW, 50 Vdc, I DQ = 350 ma, 860 MHz Table 3. ESD Protection Characteristics Characteristic Symbol Value (2,3) Unit Test Methodology R JC Class Human Body Model (per JESD22--A4) 2 ( V) Machine Model (per EIA/JESD22--A5) B (--400 V) Charge Device Model (per JESD22--C) IV (>00 V) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A3, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C/W Off Characteristics (4) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) Drain--Source Breakdown Voltage (I D =50mA,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 0 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (4) (V DS =Vdc,I D = 0 Adc) Gate Quiescent Voltage (V DD =50Vdc,I D = 350 madc, Measured in Functional Test) Drain--Source On--Voltage (4) (V GS =Vdc,I D =0.25Adc) I GSS 0.5 Adc V (BR)DSS 5 Vdc I DSS Adc I DSS Adc V GS(th) Vdc V GS(Q) Vdc V DS(on) 0.2 Vdc Dynamic Characteristics Reverse Transfer Capacitance (5) (V DS =50Vdc 30 MHz, V GS =0Vdc) Output Capacitance (5) (V DS =50Vdc 30 MHz, V GS =0Vdc) Input Capacitance (5) (V DS =50Vdc,V GS =0Vdc 30 MHz) C rss 4 pf C oss 65.4 pf C iss 59 pf. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Each side of device measured separately. 5. Part internally input matched. (continued) 2

3 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) V DD =50Vdc,I DQ = 350 ma, P out =8WAvg., f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.6 MHz Channel 4 MHz 4 khz Bandwidth. Power Gain G ps db Drain Efficiency D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Table 6. Ordering Information Device Tape and Reel Information Package MRF6V3090NR TO--270WB--4 MRF6V3090NBR R Suffix = 500 Units, 44 mm Tape Width, 3--inch Reel TO--272WB--4 MRF6V3090NR5 TO--270WB--4 MRF6V3090NBR5 R5 Suffix = 50 Units, 56 mm Tape Width, 3--inch Reel TO--272WB--4 3

4 V BIAS + C + R C2 C3 C8 C9 C V SUPPLY Z8 Z RF INPUT Z C5 C4 R2 Z2 Z3 Z4 Z5 Z6 Z7 Z9 Z2 Z3 DUT C6 C7 C5 Z4 C Z5 C2 Z6 Z7 C3 C4 Z8 RF OUTPUT Z + C6 C7 C8 Z Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z, Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Figure 2. MRF6VP309N 860 MHz Single -Ended Narrowband Test Circuit Schematic Table 7. MRF6VP309N 860 MHz Single -Ended Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer C 22 F, 35 V Tantalum Capacitor T49X226K035AT Kermet C2, C9, C7 F, 50 V Chip Capacitors GRM55DR6H6KA88L Murata C3, C5, C8, C4, C6 43 pf Chip Capacitors ATC0B430JT500XT ATC C4 6.2 pf Chip Capacitor ATC0B6R2BT500XT ATC C6 2.2 pf Chip Capacitor ATC0B2R2JT500XT ATC C7 9. pf Chip Capacitor ATC0B9RCT500XT ATC C, C8 2 F, 0 V Electrolytic Capacitors EEVFK2A22M Panasonic--ECG C, C5 7.5 pf Chip Capacitors ATC0B7R5CT500XT ATC C2 3.0 pf Chip Capacitor ATC0B3R0CT500XT ATC C3 0.7 pf Chip Capacitor ATC0B0R7BT500XT ATC R k, /4 W Chip Resistor CRCW6KOJNEA Vishay R2, /4 W Chip Resistor CRCW6ROJNEA Vishay PCB 0.030, r =3.5 RF--35 Taconic 4

5 -- C C C8 C9 R C2 C3 C4 R2 C C4 C5 C6 MRF6V3090N Rev. 0 C7 CUT OUT AREA C6 C5 C7 C2 C3 C8 -- Figure 3. MRF6VP309N 860 MHz Single -Ended Narrowband Test Circuit Component Layout 5

6 TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 00 0 Measured with 30 MHz, V GS =0Vdc V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain -Source Voltage C iss C oss C rss G ps, POWER GAIN (db) V DD =50Vdc,I DQ = 350 ma, f = 860 MHz G ps D 8 7 P out, OUTPUT POWER (WATTS) 0 Figure 5. CW Power Gain and Drain Efficiency versus Output Power (Single -Ended Narrowband Test Circuit) D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (dbm) P3dB = 5.28 dbm (34.3 W) P2dB = 5.06 dbm (27.6 W) PdB = 50.7 dbm (7.5 W) Ideal Actual V DD =50Vdc,I DQ = 350 ma, f = 860 MHz P in, INPUT POWER (dbm) Figure 6. CW Output Power versus Input Power (Single -Ended Narrowband Test Circuit) 4 G ps, POWER GAIN (db) I DQ = 350 ma, f = 860 MHz V DD =40V P out, OUTPUT POWER (WATTS) 45 V 50 V Figure 7. CW Power Gain versus Output Power (Single -Ended Narrowband Test Circuit) V DD =50Vdc,I DQ = 350 ma, f = 860 MHz T C =--30_C G ps, POWER GAIN (db) T C =--30_C 85_C 25_C G ps D 85_C 25_C D, DRAIN EFFICIENCY (%) 8 P out, OUTPUT POWER (WATTS) Figure 8. CW Power Gain and Drain Efficiency versus Output Power versus Temperature (Single -Ended Narrowband Test Circuit) 6

7 TYPICAL CHARACTERISTICS TWO -TONE (SINGLE -ENDED NARROWBAND TEST CIRCUIT) IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,I DQ = 350 ma, f = 854 MHz f2 = 860 MHz, Two--Tone Measurements 3rd Order 5th Order th Order P out, OUTPUT POWER (WATTS) PEP Figure 9. Intermodulation Distortion Products versus Output Power IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,P out = 90 W (PEP), I DQ = 350 ma f = 860 MHz, Two--Tone Measurements Figure. Intermodulation Distortion Products versus Two -Tone Spacing 3rd Order 5th Order 7th Order TWO--TONE SPACING (MHz) 90 G ps, POWER GAIN (db) I DQ = 450 ma 350 ma 300 ma 250 ma V DD = 50 Vdc, f = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing 0 0 P out, OUTPUT POWER (WATTS) PEP Figure. Two -Tone Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 50 Vdc, f = 854 MHz, f2 = 860 MHz Two--Tone Measurements, 6 MHz Tone Spacing I DQ = 250 ma 350 ma 300 ma 450 ma P out, OUTPUT POWER (WATTS) PEP 0 Figure 2. Third Order Intermodulation Distortion versus Output Power 0 7

8 TYPICAL CHARACTERISTICS DVB -T (8k OFDM) PROBABILITY (%) DVB--T (8k OFDM) 64 QAM Data Carrier Modulation 5 Symbols PEAK--TO--AVERAGE (db) Figure 3. Single -Carrier DVB -T (8k OFDM) (db) kHzBW 7.6 MHz ACPR Measured at 4 MHz Offset from Center Frequency f, FREQUENCY (MHz) 4kHzBW DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols Figure 4. DVB -T (8k OFDM) Spectrum 5 G ps, POWER GAIN (db) I DQ = 450 ma 350 ma 300 ma 250 ma V DD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols P out, OUTPUT POWER (WATTS) AVG. 40 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V DD = 50 Vdc, f = 860 MHz DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols I DQ = 250 ma 300 ma 350 ma 450 ma 40 P out, OUTPUT POWER (WATTS) AVG. Figure 5. Single -Carrier DVB -T (8k OFDM) Power Gain versus Output Power (Single -Ended Narrowband Test Circuit) Figure 6. Single -Carrier DVB -T (8k OFDM) ACPR versus Output Power (Single -Ended Narrowband Test Circuit) G ps, POWER GAIN (db) D, DRAIN EFFICIENCY (%) V DD =50Vdc,I DQ = 350 ma --30_C f = 860 MHz, DVB--T (8k OFDM) QAM Data Carrier Modulation Symbols D 25_C _C G ps 85_C T C =--30_C 25_C ACPR P out, OUTPUT POWER (WATTS) AVG. Figure 7. Single -Carrier DVB -T (8k OFDM) Drain Efficiency, Power Gain and ACPR versus Output Power versus Temperature (Single -Ended Narrowband Test Circuit) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 8

9 TYPICAL CHARACTERISTICS 9 8 V DD =50Vdc P out =8WAvg. D = 28.5% MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 250 Figure 8. MTTF versus Junction Temperature - CW f MHz V DD =50Vdc,I DQ = 350 ma, P out = 8 W Average Z source Z load j j3.98 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance (Single -Ended Narrowband Test Circuit) 9

10 MHz BROADBAND REFERENCE CIRCUIT V DD =50Volts,I DQ = 450 ma, Channel Bandwidth = 8 MHz, Input Signal PAR = % Probability on CCDF. Signal Type P out (W) f (MHz) G ps (db) D (%) Output Signal PAR (db) IMD Shoulder (dbc) DVB--T (8k OFDM) 4.5 Avg Avg Avg V GG C V DD R C3 C9 C2 C23 C C3 R3 C7 C C2 C4 C5 R4 C8 C9 R2 C4 Q C C22 C24 V GG C2 MRF6VP309N Rev. Note: Component numbers C6, C5, C6, C7 and C8 are not used. Figure. MRF6VP309N MHz Broadband Compact Reference Circuit Component Layout V DD Figure 2. MRF6VP309N MHz Broadband Compact Reference Circuit Component Layout Bottom

11 A E R E A C C B D D Side View, Typ both ends Diamond Saw (0.05 )2X A E E Drill from bottom Dia. = A T Copper Heatsink (for 30 mil oz/ oz PCB) Designators Details A 2 places, mill down cavity B 2 places, on sides, diameter notch 0.0 deep (N connector notch) C 4 places, side, drill & tap #2--56 screw deep (SMA holes) D 4 places, side, drill & tap #4--40 screw deep (N conn holes) E 2 places drill diameter = 0.257, from bottom depth = All others, drill through & tap for #4--40 screw Figure 22. MRF6VP309N MHz Broadband Compact Reference Circuit Component Layout Heatsink

12 Table 8. MRF6VP309N MHz Broadband Compact Reference Circuit Component Designations and Values Part Description Part Number Manufacturer C, C3, C4, C7, C8, C 5 pf Chip Capacitors ATC0B5GT500XT ATC C2 7.5 pf Chip Capacitor ATC0B7R5CT500XT ATC C5 4.7 pf Chip Capacitor ATC0B4R7CT500XT ATC C9 5.6 pf Chip Capacitor ATC0B5R6CT500XT ATC C, C2 47 F, 6 V Tantalum Capacitors T49D476K06AT Kemet C3, C4, C9, C 0 pf Chip Capacitors ATC0BJT300XT ATC C2, C F, 0 V Chip Capacitors C3225X7R2A225KT TDK C23, C F, 63 V Electrolytic Capacitors MCGPR63V477M3X26--RH Multicomp Q RF High Power Transistor MRF6VP309NBR Freescale R, R2 Chip Resistors CRCW6R0JNEA Vishay R3, R4 56 Chip Resistors CRCW656R0FKEA Vishay PCB 0.030, r =3.5 RO4350B Rogers 2

13 TYPICAL CHARACTERISTICS MHz BROADBAND REFERENCE CIRCUIT G ps, POWER GAIN (db) V DD =50Vdc,I DQ = 450 ma, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols G ps D 4.5 W f, FREQUENCY (MHz) P out =4.5W Figure 23. Single -Carrier DVB -T (8k OFDM) Power Gain and Drain Efficiency versus Frequency (Broadband Reference Circuit) 9W 8 W 8 W 9W D DRAIN EFFICIENCY (%) OUTPUT PAR (db) V DD =50Vdc,I DQ = 450 ma, DVB--T (8k OFDM) 64 QAM Data Carrier Modulation, 5 Symbols PAR IMD () P out =4.5W 4.5 W f, FREQUENCY (MHz) () Intermodulation distortion shoulder measurement made using delta marker at 4.2 MHz offset from center frequency. Figure 24. Single -Carrier DVB -T (8k OFDM) Output PAR and IMD Shoulder versus Frequency (Broadband Reference Circuit) 9W 8 W 8 W 9W IMD, INTERMODULATION DISTORTION SHOULDER (dbc) V DD =50Vdc,I DQ = 450 ma Pulse Width = 0 sec, % Duty Cycle 470 MHz G ps, POWER GAIN (db) G ps D 860 MHz 600 MHz 750 MHz 750 MHz 600 MHz 470 MHz 860 MHz D DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) PULSED Figure 25. Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference Circuit) 3

14 PACKAGE DIMENSIONS 4

15 5

16 6

17 7

18 8

19 9

20 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes AN907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Sept. Initial Release of Data Sheet Dec. Added R5 part numbers MRF6VP309NR5 and MRF6VP309NBR5, p. Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis scale from 0 to 40 watts to to 50 watts, p. 5 Fig., Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph callouts, p. 6 Added Fig. 2, MHz Broadband Compact Reference Circuit Component Layout MHz -- Bottom, p. Added Fig. 22, MHz Broadband Compact Reference Circuit Component Layout MHz -- Heatsink, p. 2 Oct. 5 Added L--Band MHz performance data, p. Replaced Case Outline TO--270WB--4 Issue D with Issue E, p., 4 6. Added notes 9 and, four exposed source tabs, and a feature control frame to E and E5 on p. 4. Removed style and pin information from notes section on p. 6.

21 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E, 5 RF Document Device Number: DataMRF6VP309N Freescale Rev. 2, /5 Semiconductor, Inc. 2