RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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1 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. Typical CW Performance: V DD = 28 Volts, I DQ1 = 55 ma, I DQ2 = 195 ma, P out = 25 Watts CW, f = 2450 MHz Power Gain 27.7 db Power Added Efficiency 43.8% Capable of Handling :1 28 Vdc, 2450 MHz, 25 Watts CW Output Power Features Qualified Up to a Maximum of 28 V DD Operation Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection Excellent Thermal Stability 225 C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MW7IC2425N Rev. 0, 3/2009 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR MHz, 25 W CW, 28 V LATERAL N- CHANNEL RF POWER MOSFETs CASE TO-270 WB-16 PLASTIC MW7IC2425NR1 CASE TO-270 WB-16 GULL PLASTIC MW7IC2425GNR1 CASE TO-272 WB-16 PLASTIC MW7IC2425NBR1 V DS1 GND V DS GND RF in RF out /V DS2 RF in 6 14 RF out /V DS2 V GS1 V GS2 V DS1 Quiescent Current Temperature Compensation (1) 7 V GS1 8 V GS2 9 V DS1 GND GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to Select Documentation/Application Notes - AN1977 or AN1987., Inc., All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DS -0.5, +65 Vdc Gate-Source Voltage V GS -0.5, + Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg - 65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C Input Power P in 20 dbm Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture) Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case (Case Temperature 80 C, P out = 25 W CW) Table 3. ESD Protection Characteristics Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Test Methodology Charge Device Model (per JESD22-C1) Table 4. Moisture Sensitivity Level Stage 1, 28 Vdc, I DQ1 = 55 ma Stage 2, 28 Vdc, I DQ2 = 195 ma R θjc Class 1B (Minimum) A (Minimum) II (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD C Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C/W Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 1.5 Vdc, V DS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 20 μadc) I DSS μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc Gate Quiescent Voltage V GS(Q) 2.7 Vdc (V DS = 28 Vdc, I DQ1 = 55 ma) (4) Fixture Gate Quiescent Voltage V GG(Q) Vdc (V DD = 28 Vdc, I DQ1 = 55 madc) (4,5) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. (continued) 2

3 Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 1.5 Vdc, V DS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 80 μadc) I DSS μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc Gate Quiescent Voltage V GS(Q) 2.7 Vdc (V DS = 28 Vdc, I DQ2 = 195 madc) (1) Fixture Gate Quiescent Voltage V GG(Q) Vdc (V DD = 28 Vdc, I DQ2 = 195 madc) (1,2) Drain-Source On-Voltage (V GS = Vdc, I D = 800 madc) Stage 2 - Dynamic Characteristics (3) Output Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) V DS(on) Vdc C oss 111 pf Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture, (2) 50 ohm system) V DD = 28 Vdc, I DQ1 = 55 ma, I DQ2 = 195 ma, P out = 25 W CW, f = 2450 MHz Power Gain G ps db Power Added Efficiency PAE % Input Return Loss IRL db Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1 = 77 ma, I DQ2 = 275 ma, P out = 4 W Avg., f = 2700 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel ±8.5 MHz Offset. Power Gain G ps db Power Added Efficiency PAE % Output Peak-to-Average 0.01% Probability on CCDF PAR 9 db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1. Measured in Freescale Narrowband Test Fixture. 2. See Appendix A for functional test fixture documentation. 3. Part internally matched both on input and output. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. 3

4 V DD1 V D2 B1 28 V C17 C16 C9 C15 C8 C7 C14 RF INPUT Z1 Z2 Z3 C4 C5 C6 Z4 C DUT Quiescent Current Temperature Compensation Z5 Z6 C13 Z7 Z8 C Z9 C12 Z Z11 C11 Z13 Z12 Z14 RF OUTPUT V G1 V G2 R4 R5 R6 R1 R2 R3 C2 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z x Microstrip x Microstrip x Microstrip 0.0 x Microstrip x Microstrip x x Taper 0.0 x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z13* x Microstrip Z x Microstrip PCB Rogers R04350B, , ε r = 3.48 * Line length includes microstrip bends Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 47 Ω, 0 MHz Short Ferrite Bead Fair-Rite C1, C4, C7, C12, C pf Chip Capacitors ATC600S6R8CT250XT ATC C2, C5, C8, C13 nf Chip Capacitors C0603C3J5RAC Kemet C3, C6, C9, C14 1 μf, 50 V Chip Capacitors GRM32RR71H5KA01B Murata C 2.4 pf Chip Capacitor ATC600S2R4BT250XT ATC C pf Chip Capacitor ATC600S3R3BT250XT ATC C16, C17 μf, 50 V Chip Capacitors GRM55DR61H6KA88B Murata R1, R4 12 KΩ, 1/4 W Chip Resistors CRCW FKEA Vishay R2, R3, R5, R6 1 KΩ, 1/4 W Chip Resistors CRCW120601FKEA Vishay 4

5 MW7IC2425N Rev. 1 B1 C17 C8 C7 C9 C15 C14 C13 C16 C12 C5 R4 R5 R6 C4 C1 C2 CUT OUT AREA C C11 V G1 V G2 R1 R2 R3 C6 C3 Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout 5

6 TYPICAL CHARACTERISTICS NARROWBAND G ps, POWER GAIN (db) V DD = 28 Vdc I DQ1 = 55 ma I DQ2 = 195 ma f = 2450 MHz P out, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Power Added Efficiency versus CW Output Power PAE, POWER ADDED EFFICIEY (%) P out, OUTPUT POWER (dbm) P1dB = 44.5 dbm (28.05 W) 14 P3dB = 44.9 dbm (30.9 W) V DD = 28 Vdc, I DQ1 = 55 ma I DQ2 = 195 ma, f = 2450 MHz P in, INPUT POWER (dbm) Ideal Actual Figure 6. CW Output Power versus Input Power G ps, POWER GAIN (db) V D1 = 32 V 30 V 28 V 1 V D2 = 28 Vdc I DQ1 = 55 ma I DQ2 = 195 ma f = 2450 MHz P out, OUTPUT POWER (WATTS) CW 0 0 Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of V D PAE, POWER ADDED EFFICIEY (%) G ps, POWER GAIN (db) V V D2 = 28 V 32 V 1 28 V 30 V 32 V V D1 = 28 Vdc I DQ1 = 55 ma I DQ2 = 195 ma f = 2450 MHz P out, OUTPUT POWER (WATTS) CW 0 0 Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of V D PAE, POWER ADDED EFFICIEY (%) 6

7 G ps, POWER GAIN (db) TYPICAL CHARACTERISTICS NARROWBAND I DQ1 = 65 ma 60 ma 55 ma 50 ma 45 ma P out, OUTPUT POWER (WATTS) CW I DQ1 varied from 45 ma to 65 ma in 5 ma steps 50 V DD = 28 Vdc I DQ2 = 195 ma f = 2450 MHz 0 0 Figure 9. Power Gain and Power Added Efficiency versus CW Output Power as a Function of I DQ PAE, POWER ADDED EFFICIEY (%) G ps, POWER GAIN (db) ma I DQ2 = 235 ma ma ma 155 ma I DQ2 varied from 155 ma to 235 ma in 20 ma steps P out, OUTPUT POWER (WATTS) CW 20 V DD = 28 Vdc I DQ1 = 55 ma f = 2450 MHz 0 Figure. Power Gain and Power Added Efficiency versus CW Output Power as a Function of I DQ2 30 PAE, POWER ADDED EFFICIEY (%) 9 8 MTTF (HOURS) 7 6 2nd Stage 1st Stage T J, JUTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 25 W CW, and PAE = 43.8%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature 250 7

Z o = 50 Ω Z load f = 2450 MHz Z source f = 2450 MHz V DD = 28 Vdc, I DQ1 = 55 ma, I DQ2 = 195 ma, P out = 25 W CW f MHz Z source Z load 2450 32 - j6.256 6.2 - j1.

8 Z o = 50 Ω Z load f = 2450 MHz Z source f = 2450 MHz V DD = 28 Vdc, I DQ1 = 55 ma, I DQ2 = 195 ma, P out = 25 W CW f MHz Z source Z load j j1.17 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance Narrowband 8

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18 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Mar Initial Release of Data Sheet 18

19 APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUTIONAL TEST DATA, FIXTURE AND THERMAL DATA MW7IC2725N Rev. 1.3 B1 C17 C8 C7 C9 C15 C14 C13 C16 C12 V G1 C5 C1 R4 R5 R6 R1 R2 R3 C4 C6 C3 C2 CUT OUT AREA C C11 V G2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z x Microstrip x Microstrip x Microstrip 0.0 x Microstrip x Microstrip x x Taper x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z13* x Microstrip Z x Microstrip PCB Rogers R04350B, , ε r = 3.48 * Line length includes microstrip bends Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout Table 1. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1 = 77 ma, I DQ2 = 275 ma, P out = 4 W Avg., f = 2700 MHz, WiMAX, OFDM d, 64 QAM 3 / 4, 4 Bursts, MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. ACPR measured in 1 MHz Channel ±8.5 MHz Offset. Power Gain G ps db Power Added Efficiency PAE % Output Peak-to-Average 0.01% Probability on CCDF PAR 9 db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db (continued) 19

20 APPENDIX A MW7IC2425NR1/GNR1/NBR1 FUTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued) Table 1. Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 1 - On Characteristics Gate Quiescent Voltage (V DS = 28 Vdc, I DQ1 = 77 ma) Fixture Gate Quiescent Voltage (V DD = 28 Vdc, I DQ1 = 77 madc, Measured in Functional Test) Stage 2 - On Characteristics Gate Quiescent Voltage (V DS = 28 Vdc, I DQ2 = 275 madc) Fixture Gate Quiescent Voltage (V DD = 28 Vdc, I DQ2 = 275 madc, Measured in Functional Test) V GS(Q) 2.7 Vdc V GG(Q) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case (Case Temperature 81 C, P out = 25 W CW) Stage 1, 28 Vdc, I DQ1 = 77 ma Stage 2, 28 Vdc, I DQ2 = 275 ma R θjc C/W 20

21 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 0022 China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. RF Document Device Number: Data MW7IC2425N Freescale Rev. 0, 3/2009Semiconductor 21

RF LDMOS Wideband 2-Stage Power Amplifiers

Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance