RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Transcription

1 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 32 volt analog or digital television transmitter equipment. Typical Narrowband Two-Tone 860 MHz: V DD = 32 Volts, I DQ = 600 ma, P out = 270 Watts PEP Power Gain.4 db Drain Efficiency 44.8% IMD dbc Capable of Handling : 32 Vdc, 860 MHz, 3 db Overdrive, Designed for Enhanced Ruggedness Features Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use Designed for Push-Pull Operation Only Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 3 inch Reel. R5 Suffix = 50 Units per 56 mm, 3 inch Reel. Document Number: MRFE6P3300H Rev. 2, 2/ MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375G-04, STYLE NI-860C3 Table. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, 66 Vdc Gate-Source Voltage V GS -0.5, 2 Vdc Storage Temperature Range T stg - 65 to 50 C Case Operating Temperature T C 50 C Operating Junction Temperature (,2) T J 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 300 W CW Case Temperature 82 C, 2 W CW Case Temperature 79 C, 0 W CW Case Temperature 8 C, 60 W CW R θjc C/W. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN955., Inc., All rights reserved.

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A4) Machine Model (per EIA/JESD22-A5) Charge Device Model (per JESD22-C) Class 3B (Minimum) C (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics () Zero Gate Voltage Drain Leakage Current (4) (V DS = 66 Vdc, V GS = 0 Vdc) I DSS μadc Zero Gate Voltage Drain Leakage Current (4) (V DS = 32 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) I DSS μadc I GSS μadc On Characteristics () Gate Threshold Voltage (V DS = Vdc, I D = 350 μadc) Gate Quiescent Voltage (3) (V DD = 32 Vdc, I D = 600 madc, Measured in Functional Test) Drain-Source On-Voltage (V GS = Vdc, I D = 2.4 Adc) Dynamic Characteristics (,2) Reverse Transfer Capacitance (4) (V DS = 32 Vdc ± 30 MHz, V GS = 0 Vdc) Output Capacitance (4) (V DS = 32 Vdc ± 30 MHz, V GS = 0 Vdc) Input Capacitance () (V DS = 32 Vdc, V GS = 0 Vdc ± 30 MHz) V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss.22 pf C oss 27 pf C iss 60 pf Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) V DD = 32 Vdc, I DQ = 600 ma, P out = 270 W PEP, f = 857 MHz, f2 = 863 MHz Power Gain G ps db Drain Efficiency η D % Intermodulation Distortion IMD dbc Input Return Loss IRL db. Each side of the device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push-pull configuration. 4. Drains are tied together internally as this is a total device value. 2

3 R V BIAS R3 COAX C C2 C3 B Z9 Z C23 C5 C6 C8 C7 COAX3 V SUPPLY Z4 Z8 Z2 Z4 Z6 RF INPUT Z C4 Z2 Z3 Z6 C6 Z7 DUT C C C4 C2 Z8 RF OUTPUT V BIAS COAX2 C9 C5 C7 C8 R2 B2 Z5 Z Z9 Z3 Z5 Z7 Z C24 C9 C3 C COAX4 C22 C2 V SUPPLY Z 0.40 x 0.08 Microstrip Z2, Z x 0. Microstrip Z4, Z5.86 x Microstrip Z6, Z x Microstrip Z8, Z9 0.9 x Microstrip Z, Z.306 x 0.50 Microstrip Z2, Z x Microstrip Z4, Z x Microstrip Z6, Z x 0.25 Microstrip Z x 0.08 Microstrip Z9, Z x 0.65 Microstrip PCB Arlon CuClad 250GX , 0.030, ε r = 2.5 Figure MHz Narrowband Test Circuit Schematic Table MHz Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B, B2 Ferrite Beads, Short Fair-Rite C, C9.0 μf, 50 V Tantulum Chip Capacitors T49C5K050AT Kemet C2, C7, C7, C2 0. μf, 50 V Chip Capacitors CDR33BX4AKYS Kemet C3, C8, C6, C 00 pf Chip Capacitors ATC0B2JT50XT ATC C4, C5, C3, C4 0 pf Chip Capacitors ATC0BJT500XT ATC C6, C2 8.2 pf Chip Capacitors ATC0B8R2JT500XT ATC C 9. pf Chip Capacitor ATC0B9RBT500XT ATC C.8 pf Chip Capacitor ATC0BR8BT500XT ATC C5, C9 47 μf, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon C8, C μf, 63 V Electrolytic Capacitors ESME630ELL47MK25S United Chemi-Con C23, C24 22 pf Chip Capacitors ATC0B2FT500XT ATC Coax, 2, 3, 4 50 Ω, Semi Rigid Coax, 2.06 Long UT-4A-TP Micro-Coax R, R2 Ω, /4 W Chip Resistors CRCW6R0FKEA Vishay R3 kω, /4 W Chip Resistor CRCW60FKEA Vishay 3

4 C C5 C8 C23 V GG C2 C3 B V DD R3 R C6 C7 COAX COAX3 MRF6P92, Rev. 2 C4 C5 C6 CUT OUT AREA C C C2 C4 C3 COAX2 COAX4 R2 C C2 V GG C7 C8 B2 C24 VDD C22 C9 C9 Figure MHz Narrowband Test Circuit Component Layout 4

5 TYPICAL NARROWBAND CHARACTERISTICS G ps, POWER GAIN (db) ACP-L 830 ACP-U 840 η D G ps V DD = 32 Vdc, P out = 60 W (Avg.) I DQ = 600 ma, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 850 IRL 860 f, FREQUENCY (MHz) Figure 3. Single-Carrier OFDM Broadband 60 Watts Avg η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db).5 44 G ps, POWER GAIN (db) G ps 830 η D IRL 840 V DD = 32 Vdc, P out = W (Avg.) I DQ = 600 ma, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 850 ACP-L 860 ACP-U f, FREQUENCY (MHz) Figure 4. Single-Carrier OFDM Broadband Watts Avg η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) I DQ = 2400 ma 00 ma 600 ma 0 ma 800 ma V DD = 32 Vdc, f = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing P out, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, f = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing I DQ = 800 ma 600 ma 0 ma 00 ma 2400 ma 0 P out, OUTPUT POWER (WATTS) PEP 600 Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power 5

6 TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, I DQ = 600 ma f = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing 3rd Order 7th Order 5th Order IMD, INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, P out = 50 W (PEP), I DQ = 600 ma Two-Tone Measurements (f f2)/2 = Center Frequency of 860 MHz IM3-L IM3-U IM5-U IM5-L IM7-U IM7-L 80 P out, OUTPUT POWER (WATTS) PEP TWO-T ONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing P out, OUTPUT POWER (dbm) P3dB = 55.9 dbm ( W) PdB = 55.5 dbm (327.9 W) P6dB = dbm ( W) Actual Ideal V DD = 32 Vdc, I DQ = 600 ma Pulsed CW, 2 μsec(on), % Duty Cycle f = 860 MHz P in, INPUT POWER (dbm) Figure 9. Pulsed CW Output Power versus Input Power 42 η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) 45 V DD = 32 Vdc, I DQ = 600 ma, f = 860 MHz -30 C K Mode OFDM, 64 QAM Data Carrier -30 Modulation, 5 Symbols 25 C C 30 η D 25 C C 25 C T C = -30 C G ps ACP-U 85 C -30 C ACP-L P out, OUTPUT POWER (WATTS) AVG. Figure. Single-Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 6

7 TYPICAL NARROWBAND CHARACTERISTICS G ps, POWER GAIN (db) 22 G 2 T ps C = -30 C C 85 C η D V DD = 32 Vdc I DQ = 600 ma f = 860 MHz 0 P out, OUTPUT POWER (WATTS) CW -30 C Figure. Power Gain and Drain Efficiency versus CW Output Power 25 C 85 C η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) I DQ = 600 ma f = 860 MHz V DD = 28 V 32 V 30 V P out, OUTPUT POWER (WATTS) CW Figure 2. Power Gain versus Output Power 7 MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD = 32 Vdc, P out = 270 W PEP, and η D = 44.8%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 3. MTTF versus Junction Temperature 250 7

8 DIGITAL TEST SIGNALS PROBABILITY (%) K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols (db) khz BW 7.6 MHz ACPR Measured at 3.9 MHz Offset from Center Frequency khz BW PEAK-T O-AVERAGE (db) Figure 4. Single-Carrier DVTB OFDM f, FREQUENCY (MHz) Figure 5. 8K Mode DVBT OFDM Spectrum 5 8

9 f = 890 MHz Z load f = 830 MHz Z o = Ω f = 890 MHz Z source f = 830 MHz V DD = 32 Vdc, I DQ = 600 ma, P out = 270 W PEP f MHz Z source Ω j j j5.8 Z load Ω j j j j j j j0.43 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network Device Under Test - Output Matching Network - Z source Z load Figure MHz Narrowband Series Equivalent Source and Load Impedance 9

10 PACKAGE DIMENSIONS ccc M R (LID) T A M B M 4X K J G 4 L X Q bbb M B (FLANGE) T A M B M NOTES:. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y4.5M DIMENSION H TO BE MEASURED (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF.40 (28.96) BASED ON 3M SCREW. S (INSULATOR) bbb M T A M E B M H A 4X D bbb M T A A M ccc M T A M N (LID) M (INSULATOR) bbb M T A M B M B M B M B F C T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.0 BSC BSC H J BSC BSC K L BSC.8 BSC M N Q R S bbb 0.0 REF 0.25 REF ccc 0.05 REF 0.38 REF STYLE : PIN. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE CASE 375G-04 ISSUE G NI-860C3

11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 May 07 Initial Release of Data Sheet Dec. 08 Table 4, Dynamic Characteristics, corrected C iss test condition to indicate AC stimulus on the V GS connection versus the V DS connection, corrected Typ value from 6 to 60 pf, p. 2 Fig., Test Circuit Schematic, Z-list, changed Z4, Z5 from.03 x Microstrip to.86 x Microstrip; Z, Z from.054 x 0.50 Microstrip to.306 x 0.50 Microstrip; and Z9, Z from 0.65 x Microstrip to x 0.65 Microstrip; also separated Z and Z8 into two lines in Z-list, p. 3 Updated PCB information to show more specific material details, Fig., Test Circuit Schematic, p. 3 Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 2 Dec. 09 Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN34. (See Rev. data sheet for MRFE6P3300HR5.)

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