RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN--PCS/cellular radio and WLL applications. Typical Single--Carrier W--CDMA Performance: V DD =28Volts, I DQ = 1250 ma, P out = 40 Watts Avg., f = MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = % Probability on CCDF. Power Gain 20 db Drain Efficiency 30% Device Output Signal PAR % Probability on CCDF 5 MHz Offset --36 dbc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 32 Vdc, 1960 MHz, 130 Watts CW Output Power P 1 db Compression Point 130 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MD7P19130H Rev. 2, 8/2010 MD7P19130HR3 MD7P19130HSR MHz, 40 W AVG., 28 V SINGLE W -CDMA LATERAL N -CHANNEL RF POWER MOSFETs CASE 465M -01, STYLE 1 NI MD7P19130HR3 CASE 465H -02, STYLE 1 NI -780S -4 MD7P19130HSR3 RF ina /V GSA 3 1 RF outa /V DSA RF inb /V GSB 4 2 RF outb /V DSB (Top View) Table 1. Maximum Ratings Figure 1. Pin Connections Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +65 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., Inc., 2008, All rights reserved. 1

2 Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 80 C, 130 W CW Case Temperature 75 C, 40 W CW Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Characteristic Symbol Value (1,2) Unit Test Methodology Charge Device Model (per JESD22--C101) R θjc Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (3) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) C/W I DSS 10 μadc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics (3) Gate Threshold Voltage (V DS =10Vdc,I D = 316 μadc) Gate Quiescent Voltage (V DD =28Vdc,I D = 1250 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =3.16Adc) Dynamic Characteristics (3,4) Reverse Transfer Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) Output Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =28Vdc,V GS =0Vdc± 30 1 MHz) I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 1.2 pf C oss 586 pf C iss 348 pf Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1250 ma, P out = 40 W Avg., f = MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = % Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHzOffset. Power Gain G ps db Drain Efficiency η D % Output Peak--to--Average 0.01% Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Measurement made with device in single--ended configuration. 4. Part internally matched both on input and output. (continued) 2

3 Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1250 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 130 W Gain Flatness in 60 MHz P out =40WAvg. G F 0.3 db Average Deviation from Linear Phase in 60 MHz out = 130 W CW Φ 0.5 Average Group P out = 130 W CW, f = 1960 MHz Delay 2.3 ns Part--to--Part Insertion Phase P out = 130 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature (--30 C to+85 C) Output Power Variation over Temperature (--30 C to+85 C) Φ 80 G db/ C P1dB 0.01 db/ C 3

4 V BIAS + C1 + C2 C3 C4 B1 R1 C6 Z11 Z C7 C8 C10 Z14 Z15 Z16 Z17 Z18 C11 C12 V SUPPLY RF INPUT Z7 Z8 Z9 Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z12 DUT Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 C9 RF OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z x0.110 Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x0.311 Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Arlon CuClad 250GX , 0.030, ε r =2.55 Figure 2. MD7P19130HR3(HSR3) Test Circuit Schematic Table 5. MD7P19130HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead ROP50 Fair--Rite C1 47 μf, 50 V Electrolytic Capacitor 476KXM063M Illinois Cap. C2 100 μf, 50 V Electrolitic Capacitor T491C105K050AT Kemet C3 1.0 μf Chip Capacitor ATC100B102JT50XT ATC C4, C μf Chip Capacitors CDR33BX104AKYS Kemet C5, C9 11 pf Chip Capacitors ATC100B110JT500XT ATC C6 13 pf Chip Capacitor ATC100B130JT500XT ATC C7 8.2 pf Chip Capacitor ATC100B8R2JT500XT ATC C8 22 μf, 35 V Tantalum Capacitor T491C226K035AT Kemet C μf, 63 V Electrolytic Capacitor 477KXM063M Illinois Cap. C11 10 μf, 50 V Chip Capacitor GRM55DR61H106KA88B Murata R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay 4

5 C2 C10 C3 C4 R1 B1 C6 C7 C12 C1 C8 C11 C5 CUT OUT AREA C9 MD7P19130H/HS Rev. 2 Figure 3. MD7P19130HR3(HSR3) Test Circuit Component Layout Single--ended λ λ 4 4 Quadrature combined λ 4 Doherty λ 2 λ 2 Push--pull Figure 4. Possible Circuit Topologies 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) G ps ACPR η D V DD =28Vdc,P out =40W(Avg.) I DQ = 1250 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = % Probability (CCDF) --36 PARC IRL f, FREQUENCY (MHz) Figure 5. Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 40 Watts Avg η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) G ps, POWER GAIN (db) I DQ = 1875 ma ma 1250 ma ma ma V DD = 28 Vdc, f = 1960 MHz CW Measurements P out, OUTPUT POWER (WATTS) CW Figure 6. CW Power Gain versus Output Power G ps, POWER GAIN (db) OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (db) ACPR --1 db = W --2 db = W η D G ps --3 db = W --4 V DD =28Vdc,I DQ = 1250 ma f = 1960 MHz, Single--Carrier W--CDMA PARC MHz Channel Bandwidth, Input Signal --5 PAR = % Probability (CCDF) P out, OUTPUT POWER (WATTS) Figure 7. Output Peak -to -Average Ratio Compression (PARC) versus Output Power η D, DRAIN EFFICIENCY (%) ACPR (dbc) 6

7 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) T C =--40 C 25 C 85 C G ps V DD =28Vdc,I DQ = 1250 ma, f = 1960 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = % Probability (CCDF) ACPR --40 C 25 C 85 C η D --40 C 25 C 85 C η D, DRAIN EFFICIENCY (%) ACPR (dbc) P out, OUTPUT POWER (WATTS) AVG. Figure 8. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power S S21 (db) S S11 (db) MTTF (HOURS) V DD =28Vdc I DQ = 1250 ma f, FREQUENCY (MHz) Figure 9. Broadband Frequency Response T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD =28Vdc,P out = 40 W Avg., and η D = 30%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature 250 7

8 W -CDMA TEST SIGNAL PROBABILITY (%) Input Signal W--CDMA. ACPR Measured in 3.84 MHz Channel ±5 MHzOffset. Input Signal PAR = % Probability on CCDF PEAK--TO--AVERAGE (db) Figure 11. CCDF W -CDMA IQ Magnitude Clipping, Single -Carrier Test Signal 10 (db) ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW +ACPRin3.84MHz Integrated BW f, FREQUENCY (MHz) Figure 12. Single -Carrier W -CDMA Spectrum 8

9 Z o =10Ω Z source f = 2040 MHz f = 1880 MHz f = 2040 MHz Z load f = 1880 MHz f MHz V DD =28Vdc,I DQ = 1250 ma, P out =40WAvg. Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j2.02 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance 9

10 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) P3dB = dbm (223 W) Ideal P1dB = dbm (185 W) 53 Actual V DD =28Vdc,I DQ = 1250 ma, Pulsed CW μsec(on), 10% Duty Cycle, f = 1960 MHz P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V Test Impedances per Compression Level Z source Ω Z load Ω P1dB j j2.99 Figure 14. Pulsed CW Output Power versus Input 28 V 10

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15 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 May 2008 Initial Release of Data Sheet 1 Dec Corrected the pin order in Fig. 1, Pin Connections, to match the Mechanical Outline pin order, p. 1 2 Aug Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 Updated Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal, to better represent production test signal, p. 8 Updated Fig. 15, Single--Carrier W--CDMA Spectrum, to better represent production test signal, p. 8 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p

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