RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. Typical 2--carrier W--CDMA Performance: V DD =28Volts,I DQ = 1200 ma, P out = 30 Watts Avg., f = MHz, Channel Bandwidth = 3.84 MHz, PAR = % Probability on CCDF. Power Gain 15.5 db Drain Efficiency 27.5% 10 MHz Offset --37 dbc in 3.84 MHz Channel Bandwidth 5 MHz Offset --41 dbc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 28 Vdc, 2140 MHz, 140 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6S21140H Rev. 5, 2/2010 MRF6S21140HR3 MRF6S21140HSR MHz, 30 W AVG., 28 V 2xW-CDMA LATERAL N -CHANNEL RF POWER MOSFETs CASE 465B -03, STYLE 1 NI -880 MRF6S21140HR3 CASE 465C -02, STYLE 1 NI -880S MRF6S21140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +68 Vdc Gate--Source Voltage V GS --0.5, +12 Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 140 W CW Case Temperature 75 C, 30 W CW R θjc C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955., Inc., , All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =68Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 300 μadc) Gate Quiescent Voltage (V DD =28Vdc,I D = 1200 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =3Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 2 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1200 ma, P out =30WAvg.,f1=2112.5MHz,f2= MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel ±5 MHz Offset. IM3 measured in 3.84 MHz Channel ±10 MHz Offset. PAR = % Probability on CCDF. Power Gain G ps db Drain Efficiency η D % Intermodulation Distortion IM dbc Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1. Part is internally matched both on input and output. 2

3 V BIAS R1 Z6 V SUPPLY C5 R2 C4 C3 Z5 + C10 C12 C13 C16 R3 RF INPUT Z1 Z2 Z3 Z4 Z8 C17 Z9 Z10 Z11 C9 Z12 Z13 RF OUTPUT C1 C19 C2 DUT C18 C6 C7 C8 Z7 C11 C14 C15 Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip (quarter wave length for bias purpose) Z6, Z x Microstrip (quarter wave length for supply purpose) Z x Microstrip Z x Microstrip Z x Microstrip Z11, Z x Microstrip Z x Microstrip PCB Taconic TLX , 0.030, ε r =2.55 Figure 1. MRF6S21140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21140HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3, C8, C9, C10, C pf Chip Capacitors ATC100B6R8CT500XT ATC C2 0.8 pf Chip Capacitor ATC100B0R8BT500XT ATC C4 220 nf Chip Capacitor VJ1812Y22YKXCAT Vishay C5, C12, C13, C14, C15 10 μf Chip Capacitors C5750X5R1H106MT TDK C6, C pf Chip Capacitors ATC100B0R2BT500XT ATC C7 0.5 pf Chip Capacitor ATC100B0R5BT500XT ATC C μf, 63 V Electrolytic Capacitor, Radial EMVY630ATR221MKE0S Nippon Chemi--Con C17, C pf Chip Capacitors ATC100B0R1BT500XT ATC R1, R2 10 kω, 1/4 W Chip Resistors CRCW FKTA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKTA Vishay 3

4 R2 R1 V GS C10 C16 V DD C5 C4 C3 C12 C13 C1 R3 C17 C9 C19 C2 CUT OUT AREA C6 C7 C18 C14 C15 C8 C11 MRF6S21140H Rev 0 Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout 4

5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) G ps, POWER GAIN (db) f, FREQUENCY (MHz) G ps IRL ACPR Figure Carrier W -CDMA Broadband P out = 30 Watts Avg V DD =28Vdc,P out =30W(Avg.), I DQ = 1200 ma, 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = % Probability (CCDF) V DD =28Vdc,P out =60W(Avg.), I DQ = 1200 ma, 2 -Carrier W -CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = % Probability (CCDF) f, FREQUENCY (MHz) 2200 IM3 G ps IRL IM3 ACPR Figure Carrier W -CDMA Broadband P out = 60 Watts Avg η D η D η D, DRAIN EFFICIENCY (%) IM3 (dbc), ACPR (dbc) η D, DRAIN EFFICIENCY (%) IM3 (dbc), ACPR (dbc) IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) ma 1200 ma 900 ma 600 ma I DQ = 1800 ma V DD =28Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing P out, OUTPUT POWER (WATTS) PEP Figure 5. Two -Tone Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD =28Vdc f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing I DQ = 600 ma ma 1500 ma 900 ma 1200 ma P out, OUTPUT POWER (WATTS) PEP 100 Figure 6. Third Order Intermodulation Distortion versus Output Power 400 5

6 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 140 W (PEP), I DQ = 1200 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 3rd Order 5th Order 7th Order TWO--TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing P out, OUTPUT POWER (dbm) P1dB = 52 dbm (158.5 W) P3dB = 52.6 dbm (180 W) V DD =28Vdc,I DQ = 1200 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz P in, INPUT POWER (dbm) Ideal Actual Figure 8. Pulsed CW Output Power versus Input Power 44 η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD =28Vdc,I DQ = 1200 ma --30_C 25_C f1 = 2135 MHz, f2 = 2145 MHz 30 85_C Carrier W--CDMA, 10 MHz Carrier 85_C 25_C IM3 Spacing MHz Channel --30_C Bandwidth. PAR = 8.5 db 0.01% Probability(CCDF) D T C =--30_C G ps _C 10 25_C 85_C _C ACPR _C P out, OUTPUT POWER (WATTS) AVG. Figure Carrier W -CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power IM3 (dbc), ACPR (dbc) G ps, POWER GAIN (db) V DD =28Vdc I DQ = 1200 ma f = 2140 MHz T C =--30_C η D 25_C 85_C _C 100 P out, OUTPUT POWER (WATTS) CW G ps 25_C 85_C Figure 10. Power Gain and Drain Efficiency versus CW Output Power η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD =24V 28 V 32 V P out, OUTPUT POWER (WATTS) CW I DQ = 1200 ma f = 2140 MHz Figure 11. Power Gain versus Output Power 250 6

7 TYPICAL CHARACTERISTICS 10 8 MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD =28Vdc,P out = 30 W Avg., and η D = 27.5%. MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Figure 12. MTTF versus Junction Temperature 250 W -CDMA TEST SIGNAL PROBABILITY (%) W--CDMA. ACPR Measured in 3.84 MHz Channel ±5 MHz Offset. IM3 Measured in MHz ±10 MHz Offset. PAR = % Probability on CCDF PEAK--TO--AVERAGE (db) Figure 13. CCDF W -CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single -Carrier Test Signal (db) MHz Channel BW IM3 in 3.84 MHz BW --ACPR in 3.84 MHz BW +ACPR in 3.84 MHz BW +IM3 in 3.84 MHz BW f, FREQUENCY (MHz) Figure Carrier W-CDMA Spectrum 7

8 f = 2200 MHz f = 2080 MHz Z load * Z o =25Ω f = 2200 MHz Z source f = 2080 MHz V DD =28Vdc,I DQ = 1200 ma, P out =30WAvg. f MHz Z source Ω j j j j9.73 Z load Ω j j j j j j2.06 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance 8

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13 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software and Tools, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 4 May 2007 Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 Removed Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications bullet as functionality is standard, p. 1 Added Optimized for Doherty Applications bullet to Features section, p. 1 Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table and related Continuous use at maximum temperature will affect MTTF footnote added, p. 1 Corrected V DS to V DD in the RF test condition voltage callout for V GS(Q) and added Measured in Functional Test, On Characteristics table, p. 2 Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device s capabilities, p. 5 Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p. 7 Added Product Documentation and Revision History, p Feb Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 Added On Characteristic V DS(on) Min value, p. 2 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p

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