RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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1 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment N- CDMA Application Typical Single-Carrier N-CDMA 880 MHz, V DD = 28 Volts, I DQ = 950 ma, P out = 27 Watts Avg, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = MHz PAR = % Probability on CCDF Power Gain 202 db Drain Efficiency 31% 750 khz Offset = -457 dbc in 30 khz Bandwidth Capable of Handling 10:1 32 Vdc, 880 MHz, 3 db Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: V DD = 28 Volts, I DQ = 700 ma, P out = 60 Watts Avg, Full Frequency Band ( MHz or MHz) Power Gain 20 db Drain Efficiency 40% Spectral 400 khz Offset = -63 dbc Spectral 600 khz Offset = -78 dbc EVM 18% rms GSM Application Typical GSM Performance: V DD = 28 Volts, I DQ = 700 ma, P out = 125 Watts, Full Frequency Band ( MHz) Power Gain 19 db Drain Efficiency 62% Features Characterized with Series Equivalent Large- Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection 225 C Capable Plastic Package RoHS Compliant In Tape and Reel R1 Suffix = 500 Units per 44 mm, 13 inch Reel Table 1 Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -05, +66 Vdc Gate-Source Voltage V GS -05, +12 Vdc Maximum Operation Voltage V DD 32, +0 Vdc Storage Temperature Range T stg - 65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C Table 2 Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 80 C, 125 W CW Case Temperature 76 C, 27 W CW Document Number: MRFE6S9125N Rev 0, 10/2007 MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz, 27 W AVG, 28 V SINGLE N-CDMA, GSM EDGE LATERAL N- CHANNEL RF POWER MOSFETs CASE , STYLE 1 TO-270 WB-4 PLASTIC MRF6S9125NR1 CASE , STYLE 1 TO-272 WB-4 PLASTIC MRF6S9125NBR1 Characteristic Symbol Value (2,3) Unit R θjc Continuous use at maximum temperature will affect MTTF 2 MTTF calculator available at Select Tools (Software & Tools)/Calculators to access MTTF calculators by product 3 Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers Go to Select Documentation/Application Notes - AN1955 C/W, Inc, 2007 All rights reserved 1

2 Table 3 ESD Protection Characteristics Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Test Methodology Charge Device Model (per JESD22-C101) Table 4 Moisture Sensitivity Level Class 1B (Minimum) A (Minimum) IV (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C Table 5 Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 66 Vdc, V GS = 0 Vdc) I DSS 10 μadc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 400 μadc) Gate Quiescent Voltage (V DD = 28 Vdc, I D = 950 madc, Measured in Functional Test) Drain-Source On-Voltage (V GS = 10 Vdc, I D = 274 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) Output Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) Input Capacitance (V DS = 28 Vdc, V GS = 0 Vdc ± 30 1 MHz) I DSS 1 μadc I GSS 10 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 19 pf C oss 64 pf C iss 350 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 950 ma, P out = 27 W Avg N-CDMA, f = 880 MHz, Single-Carrier N-CDMA, MHz Channel Bandwidth Carrier ACPR measured in 30 khz Channel ±750 khz Offset PAR = % Probability on CCDF Power Gain G ps db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1 Part is internally input matched (continued) 2

3 Table 5 Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 700 ma, P out = 60 W Avg, MHz, EDGE Modulation Power Gain G ps 20 db Drain Efficiency η D 40 % Error Vector Magnitude EVM 18 % rms Spectral Regrowth at 400 khz Offset SR1-63 dbc Spectral Regrowth at 600 khz Offset SR2-78 dbc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 700 ma, P out = 125 W, MHz Power Gain G ps 19 db Drain Efficiency η D 62 % Input Return Loss IRL -12 db P 1 db Compression Point, CW (f = 880 MHz) P1dB 125 W Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 950 ma, MHz Bandwidth Video 125 W PEP P out where IM3 = -30 dbc VBW (Tone Spacing from 100 khz to VBW) ΔIMD3 = VBW frequency khz <1 dbc (both sidebands) 10 Gain Flatness in 35 MHz P out = 27 W Avg G F 093 db Gain Variation over Temperature (-30 C to +85 C) Output Power Variation over Temperature (-30 C to +85 C) MHz ΔG 0011 db/ C ΔP1dB 0205 dbm/ C 3

4 V BIAS RF INPUT + C10 Z1 C1 Z2 C9 Z3 + C8 R1 + C7 R2 C6 L1 Z4 Z5 Z6 Z7 C2 C3 C4 C5 Z8 Z9 DUT C11 L2 C18 C19 C20 C21 C22 Z10 Z11 Z12 Z13 Z14 Z15 C12 C Z16 C17 C14 C15 C16 Z17 C23 V SUPPLY RF OUTPUT Z1, Z x 0080 Microstrip Z x 0080 Microstrip Z x 0220 Microstrip Z x 0220 Microstrip Z x 0420 x 0620 Taper Z x 0620 Microstrip Z x 0620 Microstrip Z x 0620 Microstrip Z x 0620 Microstrip Z x 0620 Microstrip Z x 0620 Microstrip Z x 0220 Microstrip Z x 0220 Microstrip Z x 0220 Microstrip Z x 0080 Microstrip Z x 0080 Microstrip PCB Arlon CuClad 250GX , 0030, ε r = 255 Figure 1 MRFE6S9125NR1(NBR1) Test Circuit Schematic Table 6 MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 20 pf Chip Capacitor ATC100B200FT500XT ATC C2 62 pf Chip Capacitor ATC100B6R2BT500XT ATC C3, C pf Variable Capacitors, Gigatrim 27291SL Johanson C4, C5 11 pf Chip Capacitors ATC100B110FT500XT ATC C6, C18, C μf, 50 V Chip Capacitors C1825C564J5RAC Kemet C7, C8 47 μf, 16 V Tantalum Capacitors T491B476K016AT Kemet C9, C23 47 pf Chip Capacitors ATC700B470FT500XT ATC C μf, 50 V Electrolytic Capacitor MCHT101M1HB-1017-RH Multicomp C11, C12 12 pf Chip Capacitors ATC100B120FT250XT ATC C13, C14 51 pf Chip Capacitors ATC100B5R1BT250XT ATC C16 03 pf Chip Capacitor ATC700B0R3BT500XT ATC C17 39 pf Chip Capacitor ATC700B390FT500XT ATC C20, C21 22 μf, 35 V Tantalum Capacitors T491X226K035AT Kemet C μf, 63 V Electrolytic Capacitor EKME630ELL471MK25S Multicomp L1 715 nh Inductor J CoilCraft L2 80 nh Inductor A03T CoilCraft R1 15 Ω, 1/3 W Chip Resistor CRCW121015R0FKEA Vishay R2 560 kω, 1/4 W Resistor CRCW FKEA Vishay 4

5 C9 C8 C7 C20 C21 C22 V GG R2 C6 C19 V DD C1 C10 R1 C2 L1 C3 C4 C5 CUT OUT AREA C11 L2 C12 C18 C14 C13 C15 C16 C MHz TO272 WB Rev 0 C17 Figure 2 MRFE6S9125NR1(NBR1) Test Circuit Component Layout 5

6 G ps, POWER GAIN (db) G ps, POWER GAIN (db) G ps TYPICAL CHARACTERISTICS 860 ACPR f, FREQUENCY (MHz) Figure 3 Single- Carrier N- CDMA Broadband P out = 27 Watts Avg η D ALT1 η D ALT1 IRL 840 IRL 840 G ps V DD = 28 Vdc, P out = 27 W (Avg) I DQ = 950 ma, N CDMA IS 95 Pilot, Sync, Paging, Traffic Codes 8 Through V DD = 28 Vdc, P out = 625 W (Avg) I DQ = 950 ma, N CDMA IS 95 Pilot, Sync, Paging, Traffic Codes 8 Through ACPR f, FREQUENCY (MHz) Figure 4 Single- Carrier N- CDMA Broadband P out = 625 Watts Avg η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT1 (dbc) η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT1 (dbc) IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) ma 950 ma 712 ma 475 ma I DQ = 1475 ma V DD = 28 Vdc, f1 = 880 MHz, f2 = 8801 MHz Two Tone Measurements P out, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, f1 = 880 MHz, f2 = 8801 MHz Two Tone Measurements I DQ = 475 ma 950 ma ma 1425 ma 1187 ma P out, OUTPUT POWER (WATTS) PEP Figure 5 Two- Tone Power Gain versus Output Power Figure 6 Third Order Intermodulation Distortion versus Output Power 6

7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, I DQ = 950 ma f1 = 880 MHz, f2 = 8801 MHz Two Tone Measurements 3rd Order 5th Order 7th Order IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, P out = 125 W (PEP) I DQ = 950 ma, Two Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3 U IM3 L IM7 U IM7 L IM5 U IM5 L P out, OUTPUT POWER (WATTS) PEP TWO TONE SPACING (MHz) Figure 7 Intermodulation Distortion Products versus Output Power Figure 8 Intermodulation Distortion Products versus Tone Spacing P out, OUTPUT POWER (dbm) P3dB = 5283 dbm (19187 W) P1dB = 5192 dbm (1556 W) P6dB = 5339 dbm (21827 W) P in, INPUT POWER (dbm) Figure 9 Pulsed CW Output Power versus Input Power 37 Ideal Actual V DD = 28 Vdc, I DQ = 950 ma, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 880 MHz η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD = 28 Vdc, I DQ = 950 ma T C = 30 C 60 f = 880 MHz, N CDMA IS C 20 Pilot, Sync, Paging, Traffic Codes 85 C 8 Through C 25 C C ACPR 30 C 25 C 85 C C 60 G ps 85 C 10 η D 70 ALT1 25 C P out, OUTPUT POWER (WATTS) AVG Figure 10 Single- Carrier N- CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dbc) ALT1, CHANNEL POWER (dbc) 7

8 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) G ps 25 C T C = 30 C 85 C 17 η D V DD = 28 Vdc I DQ = 950 ma f = 880 MHz P out, OUTPUT POWER (WATTS) CW C C 85 C η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) I DQ = 950 ma f = 880 MHz V V V DD = 24 V P out, OUTPUT POWER (WATTS) CW 280 Figure 11 Power Gain and Drain Efficiency versus CW Output Power Figure 12 Power Gain versus Output Power 10 8 MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) 250 This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 27 W Avg, and η D = 31% MTTF calculator available at Select Tools (Software & Tools)/Calculators to access MTTF calculators by product Figure 13 MTTF versus Junction Temperature 8

9 N-CDMA TEST SIGNAL PROBABILITY (%) IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) MHz Channel Bandwidth Carriers ACPR Measured in 30 khz ±750 khz Offset ALT1 Measured in 30 khz ±198 MHz Offset PAR = % Probability on CCDF PEAK TO AVERAGE (db) Figure 14 Single- Carrier CCDF N- CDMA 10 (db) MHz 20 Channel BW ALT1 in 30 khz +ALT1 in 30 khz Integrated BW Integrated BW ACPR in 30 khz +ACPR in 30 khz Integrated BW Integrated BW f, FREQUENCY (MHz) Figure 15 Single- Carrier N- CDMA Spectrum 9

10 f = 900 MHz Z load f = 860 MHz Z o = 5 Ω f = 900 MHz Z source f = 860 MHz f MHz V DD = 28 Vdc, I DQ = 950 ma, P out = 27 W Avg Z source Ω j j j245 Z load Ω j j j j j j j j j j j j j j j037 Z source = Test circuit impedance as measured from gate to ground Z load = Test circuit impedance as measured from drain to ground Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16 Series Equivalent Source and Load Impedance 10

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17 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document REVISION HISTORY Revision Date Description 0 Oct 2007 Initial Release of Data Sheet 17

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