Table 5. Electrical Characteristics (T A = 25 C unless otherwise noted)

Transcription

1 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 00 MHz The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment Typical Single-Carrier N-CDMA 880 MHz, V DD = 26 Volts, I DQ = 600 ma, P out = 4 Watts Avg, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 3) Power Gain 78 db Drain Efficiency 30% 750 khz Offset -47 dbc in 30 khz Bandwidth Capable of Handling : 26 Vdc, 880 MHz, 70 Watts CW Output Power Features Characterized with Series Equivalent Large- Signal Impedance Parameters Integrated ESD Protection 200 C Capable Plastic Package N Suffix Indicates Lead- Free Terminations RoHS Compliant In Tape and Reel R Suffix = 500 Units per 24 mm, 3 inch Reel Document Number: Rev 7, 6/ MHz, 70 W, 26 V SINGLE N- CDMA LATERAL N- CHANNEL BROADBAND RF POWER MOSFET CASE , STYLE TO PLASTIC Table Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 05, +68 Vdc Gate-Source Voltage V GS - 05, +5 Vdc Total Device T C = 25 C Derate above 25 C P D W W/ C Storage Temperature Range T stg - 65 to +50 C Operating Junction Temperature T J 200 C Table 2 Thermal Characteristics Characteristic Symbol Value (,2) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 70 W CW Case Temperature 78 C, 4 W CW Table 3 ESD Protection Characteristics Human Body Model (per JESD22-A4) Machine Model (per EIA/JESD22-A5) Test Methodology Charge Device Model (per JESD22-C) Table 4 Moisture Sensitivity Level R θjc Class 2 (Minimum) A (Minimum) IV (Minimum) C/W Test Methodology Rating Package Peak Temperature Unit Per JESD22-A3, IPC/JEDEC J-STD C MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product 2 Refer to AN955, Thermal Measurement Methodology of RF Power Amplifiers Go to Select Documentation/Application Notes - AN955, Inc, 2006, 2009 All rights reserved

2 Table 5 Electrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 200 μa) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 600 madc) Drain-Source On-Voltage (V GS = Vdc, I D = Adc) Forward Transconductance (V DS = Vdc, I D = 4 Adc) Dynamic Characteristic Input Capacitance (V DS = 26 Vdc ± 30 MHz, V GS = 0 Vdc) Output Capacitance (V DS = 26 Vdc ± 30 MHz, V GS = 0 Vdc) Reverse Transfer Capacitance (V DS = 26 Vdc ± 30 MHz, V GS = 0 Vdc) I DSS μadc I DSS μadc I GSS μadc V GS(th) Vdc V GS(Q) 37 Vdc V DS(on) Vdc g fs 47 S C iss 26 pf C oss 34 pf C rss 37 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 26 Vdc, I DQ = 600 ma, P out = 4 W Avg, f = 880 MHz, Single-Carrier N-CDMA, 2288 MHz Channel Bandwidth Carrier ACPR measured in 30 khz Channel ±750 khz Offset PAR = 98 00% Probability on CCDF Power Gain G ps 7 78 db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL -9-9 db Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 ma, P out = 60 W, f = MHz Power Gain G ps 64 db Drain Efficiency η D 62 % Input Return Loss IRL -2 db P db Compression Point (f = 940 MHz) PdB 68 W Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 ma, P out = 25 W Avg, f = MHz, GSM EDGE Signal Power Gain G ps 7 db Drain Efficiency η D 44 % Error Vector Magnitude EVM 5 % Spectral Regrowth at 400 khz Offset SR -62 dbc Spectral Regrowth at 600 khz Offset SR2-78 dbc (continued) 2

3 Table 5 Electrical Characteristics (T A = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 ma, P out = 60 W, f = MHz Power Gain G ps 64 db Drain Efficiency η D 59 % Input Return Loss IRL -5 db P db Compression Point (f = 880 MHz) PdB 7 W Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 ma, P out = 25 W Avg, f = MHz, GSM EDGE Signal Power Gain G ps 7 db Drain Efficiency η D 4 % Error Vector Magnitude EVM 35 % Spectral Regrowth at 400 khz Offset SR -66 dbc Spectral Regrowth at 600 khz Offset SR2-8 dbc 3

4 B2 V SUPPLY V BIAS + C7 RF INPUT R + C R2 B R3 C8 + C9 C Z Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 L C5 Z C8 C9 L2 C2 Z Z2 Z3 Z4 C3 C4 C5 + + C20 C2 Z5 C6 C7 Z6 R4 C22 RF OUTPUT C C2 C3 C4 C6 DUT Z Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 040 x 0060 Microstrip 04 x 0060 Microstrip 0280 x 0060 Microstrip 0500 x 00 Microstrip 0530 x 0270 Microstrip 055 x 0270 x 0530 Taper 0376 x 0530 Microstrip 06 x 0530 Microstrip 0055 x 0530 Microstrip Z 0245 x 0270 Microstrip Z 0 x 0270 Microstrip Z x 0270 Microstrip Z3 052 x 0060 Microstrip Z4 06 x 0060 Microstrip Z x 0060 Microstrip Z x 0060 Microstrip PCB Taconic RF-35, 0030, ε r = 35 Figure Test Circuit Schematic Table 6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B Small Ferrite Bead, Surface Mount Fair-Rite B2 Large Ferrite Bead, Surface Mount Fair-Rite C pf Variable Capacitor, Gigatrim 27275L Johanson C2 6 pf Chip Capacitor ATC0B60JT500XT ATC C3 75 pf Chip Capacitor ATC0B7R5JT500XT ATC C4, C pf Variable Capacitors, Gigatrim 27295L Johanson C5, C6 5 pf Chip Capacitors ATC0B50JT500XT ATC C7, C8, C20 μf, 35 V Tantalum Capacitors T49D6K035AT Kemet C9, C9, C μf Chip Capacitors ATC700A56MT50XT ATC C, C8 8 pf Chip Capacitors ATC0B80JT500XT ATC C 0 μf, 50 V Electrolytic Capacitor 55D7M050BB6AE3 Vishay C2, C4 3 pf Chip Capacitors ATC0B30JT500XT ATC C3 07 pf Chip Capacitor ATC0B0R7BT500XT ATC C5 39 pf Chip Capacitor ATC0B3R9JT500XT ATC C7 22 pf Chip Capacitor ATC0B80JT500XT ATC C2 470 μf, 63 V Electrolytic Capacitor ESMG630ELL47MK20S United Chemi-Con L, L2 25 nh Surface Mount Inductors A04TJL Coilcraft R k, /4 W Chip Resistor CRCW2060FKEA Vishay R2 560 k, /4 W Chip Resistor CRCW FKEA Vishay R3 2, /4 W Chip Resistor CRCW2062R0FKEA Vishay R4 27, /4 W Chip Resistor CRCW20627R0FKEA Vishay 4

5 C7 V GG R R2 B R3 C8 C9 C9 B2 C2 V DD C20 R4 C22 C C2 C C L C3 C4 C6 C5 CUT OUT AREA C8 C2 C3 C4 L2 C5 C6 C7 MRF5S9070N Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo PCBs may have either Motorola or Freescale markings during the transition period These changes will have no impact on form, fit or function of the current product Figure 2 Test Circuit Component Layout 5

6 G ps, POWER GAIN (db) 20 TYPICAL CHARACTERISTICS 9 40 G ps η D 30 6 V DD = 26 Vdc, P out = 4 W (Avg), I DQ = 600 ma 25 5 Single Carrier N CDMA, IS 95 4 IRL (Pilot, Sync, Paging, Traffic Codes 8 through 3) ACPR ALT f, FREQUENCY (MHz) Figure 3 Class AB Broadband Performance 45 η D, DRAIN EFFICIENCY (%) ACPR (dbc), ALT (dbc) INPUT RETURN LOSS (db) IRL, G ps, POWER GAIN (db) I DQ = 900 ma 750 ma 600 ma 450 ma 300 ma V DD = 26 Vdc f = 880 MHz, f2 = 880 MHz Two Tone Measurements 0 khz Tone Spacing P out, OUTPUT POWER (WATTS) PEP Figure 4 Two- Tone Power Gain versus Output Power 0 IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 26 Vdc f = 880 MHz, f2 = 880 MHz Two Tone Measurements 0 khz Tone Spacing 300 ma I DQ = 900 ma 600 ma 750 ma ma 60 0 P out, OUTPUT POWER (WATTS) PEP Figure 5 Third Order Intermodulation Distortion versus Output Power G ps, POWER GAIN (db) 20 G ps η D 4 0 V DD = 26 Vdc, I DQ = 600 ma 2 f = 880 MHz, f2 = 880 MHz Two Tone Measurements, 20 0 khz Tone Spacing IMD 40 8 P out, OUTPUT POWER (WATTS) PEP Figure 6 Power Gain, Drain Efficiency and IMD versus Output Power η D, DRAIN EFFICIENCY (%) INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) IMD, V DD = 26 Vdc, I DQ = 600 ma f = 880 MHz, f2 = 880 MHz Two Tone Measurements (f + f2)/2 = Center Frequency of 880 MHz 0 khz Tone Spacing 3rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP 0 Figure 7 Intermodulation Distortion Products versus Output Power 6

7 TYPICAL CHARACTERISTICS P out, OUTPUT POWER (dbm) PdB = 49 dbm (854 W) P3dB = 4978 dbm (9497 W) P in, INPUT POWER (dbm) Ideal Actual V DD = 26 Vdc, I DQ = 600 ma Pulsed CW, 8 μsec (on), msec (off) f = 880 MHz Figure 8 Pulse CW Output Power versus Input Power 37 G ps, POWER GAIN (db) 20 G ps η D V DD = 26 Vdc, I DQ = 600 ma, f = 880 MHz 2 Single Carrier N CDMA, IS (Pilot, Sync, Paging, Traffic Codes 8 through 3) ACPR ALT 6 80 P out, OUTPUT POWER (WATTS) AVG Figure 9 N-CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 60 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) η D, DRAIN EFFICIENCY (%) G ps V DD = 26 Vdc I DQ = 600 ma η D f = 880 MHz P out, OUTPUT POWER (WATTS) CW Figure Power Gain and Drain Efficiency versus CW Output Power η D, DRAIN EFFICIENCY (%) MTTF FACTOR (HOURS X AMPS 2 ) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours x ampere 2 drain current Life tests at elevated temperatures have correlated to better than ±% of the theoretical prediction for metal failure Divide MTTF factor by I 2 D for MTTF in a particular application Figure MTTF Factor versus Junction Temperature 2 7

8 N-CDMA TEST SIGNAL PROBABILITY (%) IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 3) 2288 MHz Channel Bandwidth Carriers ACPR Measured in 30 khz ±750 khz Offset ALT Measured in 30 khz ±98 MHz Offset PAR = 98 00% Probability on CCDF PEAK TO AVERAGE (db) Figure 2 Single- Carrier CCDF N- CDMA (db) 2288 MHz 20 Channel BW ALT in 30 khz +ALT in 30 khz Integrated BW Integrated BW ACPR in 30 khz +ACPR in 30 khz Integrated BW Integrated BW f, FREQUENCY (MHz) Figure 3 Single- Carrier N- CDMA Spectrum 8

9 Z o = 2 Ω f = 895 MHz f = 895 MHz Z source f = 865 MHz Z load f = 865 MHz V DD = 26 Vdc, I DQ = 600 ma, P out = 4 W Avg f MHz Z source Ω 07 + j j j05 Z load Ω 2 + j j j j j09 Z source = Test circuit impedance as measured from gate to ground Z load = Test circuit impedance as measured from drain to ground Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 4 Series Equivalent Source and Load Impedance 9

10 PACKAGE DIMENSIONS

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13 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process Application Notes AN907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB22: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software and Tools, do a Part Number search at and select the Part Number link Go to the Software & Tools tab on the part s Product Summary page to download the respective tool The following table summarizes revisions to this document REVISION HISTORY Revision Date Description 7 June 2009 Replaced Case Outline with , Issue K, p, -2 Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min-Max to 290 Min; E3 changed from Min-Max to 50 Min) Added JEDEC Standard Package Number Modified data sheet to reflect MSL rating change from to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN356, p Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p 4 Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p 3 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p 3 3

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