RF Power Field Effect Transistor LDMOS, MHz, 15W, 26V
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1 RF Power Field Effect Transistor LDMOS, 8 17, 15W, 26V Features Designed for broadband commercial applications up to 1.7GHz High, High Efficiency and High Linearity Typical P1dB performance at 96, 26Vdc, CW Typical Power Output: 16.5W : 16.5dB Efficiency: 5% :1 VSWR Ruggedness at 15W, 26Vdc, 96 Package Style Maximum Ratings Parameter Symbol Rating Units Drain Source Voltage V DSS 65 V dc Gate Source Voltage V GS +, - V dc Total Power T C = 25 C P D W Storage Temperature T STG -65 to +15 C Junction Temperature T J 15 C Thermal Characteristics Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R ΘJC 4 ºC/W NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
2 DC 25ºC Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (V GS = Vdc, I D = 3 µadc) Gate Threshold Voltage (V ds = 26 Vdc, I d = ma) Gate Quiescent Voltage (V ds = 26 Vdc, I d = ma) Drain-Source On-Voltage (V gs = Vdc, I d = 1 A) V (BR)DSS 65 Vdc V GS(th) 2 5 Vdc V DS(Q) 3 5 Vdc V DS(on).25 Vdc RF FUNCTIONAL 25ºC (In M/A-COM Test Fixture) (1) Common Source Amplifier (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) Drain Efficiency (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) Input Return Loss (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W) G P 17 db EFF (ŋ) 5 % IRL - db Output VSWR Tolerance (V DD = 26 Vdc, I DQ = ma, f = 96, P OUT = 15 W, VSWR = :1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test Common Source Amplifier (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) Drain Efficiency (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) Input Return Loss (V DD = 26 Vdc, I DQ = ma, f = 167, P OUT = 15 W) G P 12.5 db EFF (ŋ) 5 % IRL - db (1) Device specifications obtained on a Production Test Fixture. 2
3 C1,C7 Tantalum Surface Mt. Cap., µf, V C2,C8 Ceramic Chip Capacitor,.1 µf C3,C9 Ceramic Chip Capacitor, pf C4,C,C12 Chip Capacitor, 33 pf ATCA C5 Chip Capacitor,. pf ATCA C6 Chip Capacitor, 11. pf ATCA C11 Chip Capacitor, 8.2 pf ATCA J1,J2 SMA Connector, Omni Spectra L1 Inductor, 18 nh, CoilCraft 16CS L2 Inductor, 27 nh, CoilCraft 16CS P1,P2 Connector, AMP Q1 Transistor, R1 Chip Resistor (85), k Ohm Z1 Distributed Microstrip Element,.125 x.46 Z2 Distributed Microstrip Element,.56 x.46 Z3 Distributed Microstrip Element,.8 x.46 Z4 Distributed Microstrip Element,. x.178 Z5 Distributed Microstrip Element,.253 x.178 Z6 Distributed Microstrip Element,.315 x.178 Z7 Distributed Microstrip Element,.312 x.46 Z8 Distributed Microstrip Element,.613 x.46 Z9 Distributed Microstrip Element,.125 x.46 PC Board Rogers (RO4) Duroid,.: thick, Er=3.5, 1 Oz Copper Both Sides Figure Test Fixture Schematic Figure Test Fixture Component Layout 3
4 C1,C6 Tantalum Surface Mt. Cap., µf, V C2,C7 Ceramic Chip Capacitor,.1 µf C3,C8 Ceramic Chip Capacitor, pf C4,C9,C12 Chip Capacitor, 33 pf ATCA C5 Chip Capacitor, 4.7 pf ATCA C Chip Capacitor, 3. pf ATCA C11 Chip Capacitor, 3.3 pf ATCA J1,J2 SMA Connector, Omni Spectra L1 Inductor, 18 nh, CoilCraft 16CS L2 Inductor, 27 nh, CoilCraft 16CS P1,P2 Connector, AMP Q1 Transistor, R1 Chip Resistor (85), k Ohm Z1 Distributed Microstrip Element,.125 x.46 Z2 Distributed Microstrip Element,.533 x.46 Z3 Distributed Microstrip Element,.8 x.26 Z4 Distributed Microstrip Element,.127 x.46 Z5 Distributed Microstrip Element,.146 x.46 Z6 Distributed Microstrip Element,.77 x.178 Z7 Distributed Microstrip Element,.211 x.178 Z8 Distributed Microstrip Element,.29 x.178 Z9 Distributed Microstrip Element,.9 x.46 Z Distributed Microstrip Element,.125 x.46 PC Board Rogers (RO4) Duroid,.: thick, Er=3.5, 1 Oz Copper Both Sides Figure Test Fixture Schematic Figure Test Fixture Component Layout 4
5 Figure 5. Pin Connections 5
6 19 19 CW, CW, I DQ I =ma DQ =ma (db) (db) Graph , 96: CW Power and Drain Efficiency vs. Output Power Drain Drain Efficiency Efficiency (%) (%) I DQ I =ma, DQ =ma, khz khz Tone Tone Spacing Spacing IMD IMD (dbc) (dbc) (96 (96 ) ) (96) (96) (925) (925) (925) (925) Graph , 96 : 2 Tone Intermodulation Distortion vs. Output Power 6
7 (db) (db) CW, CW, I DQ I =ma DQ =ma Drain Drain Efficiency Efficiency (%) (%) Graph 3. 16, 167: CW Power and Drain Efficiency vs. Output Power IMD IMD (dbc) (dbc) , 167, khz khz Tone Tone Spacing Spacing ma ma ma ma 16mA 16mA 16mA 16mA Avg Avg Graph 4. 16, 167: 2 Tone Intermodulation Distortion vs. Output Power 7
8 Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit for additional data sheets and product information. 8 North America: Tel. (8) Asia/Pacific: Tel , Fax Europe: Tel. +44 (14) , Fax+44 (14) 3
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
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Watts W/ C Storage Temperature Range T stg 65 to +200 C Operating Junction Temperature T J 200 C. Test Conditions
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Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
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Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions
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P D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C
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Rating Symbol Value Unit Drain Source Voltage V DSS 65 Vdc Gate Source Voltage V GS ±20 Vdc Total Device T C = 25 C Derate above 25 C
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Watts W/ C Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C. Test Conditions
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ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
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g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for
= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm
Rev 3.1 - June 2015 CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 250 W CW RF power transistor is designed for consumer and commercial cooking applications
Symbol Parameter VRF161(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C
V161(MP) 5V, 2W, 15MHz POWER VERTICAL MOSFET The V161 is a gold-metallized silicon n-channel power transistor designed for broadband commercial and military applications requiring high power and gain without
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers
Efficiency (%) c201202fc-v2-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c12fc-v2-gr1a PXAC12FC Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 18 2 MHz Description The PXAC12FC is a 1-watt LDMOS FET for use in multistandard cellular power amplifier applications in the
RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 18 to 2 MHz. Suitable for TDMA,
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices
Efficiency (%) 1215 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 0 W, 50 V, 960 1215 MHz Description The PTVA1001EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features
Symbol Parameter VRF152(MP) Unit V DSS Drain-Source Voltage 130 V I D Continuous Drain T C
VRF52 VRF52MP 5V, 5W, 75MHz RF POWER VERTICAL MOSFET The VRF52 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical
ARCHIVE INFORMATION. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5. Freescale Semiconductor
Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
BLF6G10-135RN; BLF6G10LS-135RN
BLF6G0-5RN; BLF6G0LS-5RN Rev. 0 January 00 Product data sheet. Product profile. General description 5 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 000 MHz. Table.
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: A2V09H300--04N Rev. 0, 2/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 79 W asymmetrical Doherty RF power LDMOS
PTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics
c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27
Characteristic Symbol Value Unit Thermal Resistance, Junction to Case. Test Conditions
Technical Data Document Number: Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications. It uses Freescale s newest High Voltage