Symbol Parameter VRF161(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C

Transcription

1 V161(MP) 5V, 2W, 15MHz POWER VERTICAL MOSFET The V161 is a gold-metallized silicon n-channel power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES Improved Ruggedness V (BR)DSS = 17V 2W with 24dB Typical 3MHz, 5V 2W with 14dB Typical 15MHz, 5V Excellent Stability & Low IMD Available in Matched Pairs 7:1 Load VSWR Capability at Specified Operating Conditions Nitride Passivated Refractory Gold Metallization High Power Replacement for M151 RoHS Compliant Maximum Ratings All Ratings: T C =25 C unless otherwise specified Symbol Parameter V161(MP) Unit V DSS Drain-Source Voltage 17 V I D Continuous Drain T C = 25 C 2 A V GS Gate-Source Voltage ±4 V P D Total Device T C = 25 C 35 W T STG Storage Temperature Range -65 to 15 Operating Junction Temperature 2 C Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = V, I D = ma) V DS(ON) On State Drain Voltage (I D(ON) = A, V GS = V) V I DSS Zero Gate Voltage Drain Current (V DS = V, V GS = V) 1 ma I GSS Gate-Source Leakage Current (V DS = ±2V, V DS = V) 1. μa g fs Forward Transconductance (V DS = V, I D = 5A) mhos V GS(TH) Gate Threshold Voltage (V DS = V, I D = ma) V Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance.5 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website -

2 Dynamic Characteristics V161(MP) Symbol Parameter Test Conditions Min Typ Max Unit C ISS Input Capacitance V GS = V 5 C oss Output Capacitance V DS = 15V 18 C rss Reverse Transfer Capacitance f = 1MHz 2 Functional Characteristics Symbol Parameter Min Typ Max Unit G PS f 1 = 3MHz, V DD = 5V, I DQ = 2W 2 24 G PS f = 15MHz, V DD = 5V, I DQ = 2W 14 η D f 1 = 3MHz, V DD = 5V, I DQ = 2W 5 % IMD (d3) f 1 = 3MHz, f 2 = 3.1MHz, V DD = 5V, I DQ = 2W PEP 1-3 dbc ψ f = 3MHz, V DD =5V, I DQ = 2W CW 7:1 VSWR - All Phase Angles,.2mSec X 2% Duty Factor 1. To MIL-STD-1311 Version A, test method 224B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. pf db No Degradation in Output Power Typical Performance Curves I D, DRAIN CURRENT (A) V 4.5V 5 4V 3.5V V, DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics, 17V V 7V 6V 5.5V I D, DRAIN CURRENT (A) µs PULSE TEST<.5 % DUTY CYCLE = -55 C = 25 C = 125 C V GS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 1us C, CAPACITANCE (pf) 1, C iss C oss V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage I D, DRAIN CURRENT (A) C rss TJ = 2 C T C = 25 C DC Line ms 1ms R ds(on) ms V DS Max V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area

3 Typical Performance Curves V161(MP).6 Z θjc, THERMAL IMPEDANCE ( C/W) SINGLE PULSE t 2 t 1 = Pulse Duration Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Note: P DM t 1 ( C) T C ( C) F.28F.365F.4585F RECTANGULAR PULSE DURATION (seconds) Figure 5a. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Table 1. Typical Class AB Large Signal Impedances freq Zin* Zout* 2.MHz 24- j j MHz j j.9 3MHz j j1.81 MHz 3.5- j j MHz j j2.99 Zin - gate shunted with 25 ohms Idq =.25A Zol = conj of opt load for 2w out at Vdd = 5V Pout (dbrn) Freq=3MHz 27 4 P OUT Freq=3MHz Gain P OUT (W) Vdd=5V Vdd=4V P IN, (dbm) Figure 6. P OUT and Gain vs P IN P IN, (dbm) Figure 7. Eff and P vs. P OUT IN

4 V161(MP) 3 MHz test Circuit Bias -12V C6 C7 L1 C8 L2 C9 + C + 5VDC T1 C5 R3 R1 DUT T2 C4 Output Input C1 C2 R2 C3 C pf ATC 7B C2, C5, C6 - C9 --.1uF V C pF clad mica C pF, ATC 7B C -- uf, V Electrolytic L1 - VK2-4B L Ferrite beads, 2. uh R1, R2 --, 2W SMT R3 -- 1, 2W SMT T1 -- 9:1 Transformer T2 -- 1:9 Transformer 15 MHz test Circuit C1 Bias -12V R1 C4 + C5 R3 L4 L2 C L3 + C11 + 5VDC C9 Output Input C1 C3 C2 L1 R2 DUT C6 C7 C8 C1, C2, C8 -- Arco 463 or equivalent C pF, Unelco C4 --.1uF, Ceramic SMT 5V C uf, 15 WV Tantalum C pF, Unelco J1 C7-- 25pF, Unelco J1 C9 -- Arco 262 or equivalent C -- 5nF, Ceramic SMT V C uF, 63WV Electrolytic L1 -- 3/4", #18 into Hairpin L2 -- Printed Line,.2" W x.5" L L3 -- 1", #16 into Hairpin approx 16nH L turns #16, 5/16" ID C1 - VK2-4B R1-R , 1/4W Carbon

5 V161(MP) Adding MP at the end of P/N specifies a matched pair where V GS(TH) is matched between the two parts. V TH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A M B N C P D R E S F T G W H X J Y K Z V TH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.%..5 SOE Package Outline All Dimensions are ±.5 Q 1 A U M 4 M INCHES MILLIMETERS DIM MIN MAX MIN MAX A B R B C D PIN 1 - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN J 2 K 3 D E H J K M 45 NOM 45 NOM Q H E C Seating Plane R U

6 V161(MP) Disclaimer: The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFI- DENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer s and user s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided AS IS, WHERE IS and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at