ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package
|
|
|
- Denis Sims
- 5 years ago
- Views:
Transcription
1 HiRel K-Band GaAs Super Low Noise HEMT HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz 4 3 Hermetically sealed microwave package 1 2 Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen (tbc.) ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package (ql) - see below G S D S Micro-X -08P (ql) -10 (ql) -10P (ql) -nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) IFAG IMM RPD D HIR 1 of 8 V3, August 2011
2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 3.5 V Drain-gate voltage V DG 4.5 V Gate-source voltage (reverse / forward) V GS V Drain current I D 60 ma Gate forward current I G 2 ma RF Input Power, C- and X-Band 1) P RF,in + 10 dbm Junction temperature T J 150 C Storage temperature range T stg C Total power dissipation 2) P tot 200 mw Soldering temperature 3) T sol 230 C Thermal Resistance Junction-soldering point R th JS 515 (tbc.) K/W Notes.: 1) For V DS 2 V. For V DS > 2 V, derating is required. 2) At T S = + 47 C. For T S > + 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. IFAG IMM RPD D HIR 2 of 8 V3, August 2011
3 Electrical Characteristics (at T A =25 C; unless otherwise specified) Parameter Symbol Values Unit DC Characteristics min. typ. max. Drain-source saturation current V DS = 2 V, V GS = 0 V Gate threshold voltage V DS = 2 V, I D = 1 ma Drain current at pinch-off V DS = 1.5 V, V GS = - 3 V Gate leakage current at pinch-off V DS = 1.5 V, V GS = - 3 V Transconductance V DS = 2 V, I D = 15 ma Gate leakage current at operation V DS = 2 V, I D = 15 ma Thermal resistance junction to soldering point I Dss ma -V Gth V I Dp - < 50 - µa -I Gp - < µa g m ms -I G15 - < µa R th JS K/W IFAG IMM RPD D HIR 3 of 8 V3, August 2011
4 Electrical Characteristics (continued) Parameter Symbol Values Unit AC Characteristics min. typ. max. Noise figure 1) V DS = 2 V, I D = 15 ma, f = 12 GHz NF db -08, -08P , 10P Associated gain. 1) V DS = 2 V, I D = 15 ma, f = 12 GHz G a db -08, -08P , 10P Output power at 1 db gain compression 2) V DS = 2 V, I D = 20 ma, f = 12 GHz P 1dB dbm -08, P, -10P Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). IFAG IMM RPD D HIR 4 of 8 V3, August 2011
5 Typical Common Source S-Parameters -08: V DS = 2 V, I D = 15 ma, Z o f S11 <S11 S21 <S21 S12 <S12 S22 <S22 k-fact. S 21 /S 12 MAG [GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [db] [db] 0,5 0, , , , ,40 26,8 1,0 0, , , , ,39 23,6 1,5 0, , , , ,42 22,0 2,0 0, , , , ,43 20,8 2,5 0, , , , ,43 19,8 3,0 0, , , , ,45 19,1 3,5 0, , , , ,47 18,5 4,0 0, , , , ,50 17,9 4,5 0, , , , ,52 17,5 5,0 0, , , , ,54 17,1 5,5 0, , , , ,58 16,8 6,0 0, , , , ,60 16,4 6,5 0, , , , ,63 16,1 7,0 0, , , , ,67 15,9 7,5 0, , , , ,71 15,6 8,0 0, , , , ,76 15,4 8,5 0, , , , ,79 15,3 9,0 0, , , , ,84 15,1 9,5 0, , , , ,87 14,9 10,0 0, , , , ,91 14,8 10,5 0, , , , ,94 14,7 11,0 0, , , , ,96 14,6 11,5 0, , , , ,98 14,5 12,0 0, , , , ,01 14,4 13,8 12,5 0, , , , ,03 14,3 13,3 13,0 0, , , , ,06 14,3 12,7 13,5 0, , , , ,09 14,2 12,4 14,0 0, , , , ,11 14,1 12,1 14,5 0, , , , ,13 14,1 11,9 15,0 0, , , , ,14 14,0 11,7 15,5 0, , , , ,16 14,0 11,6 16,0 0, , , , ,18 14,0 11,4 16,5 0, , , , ,19 14,0 11,3 17,0 0, , , , ,19 13,9 11,3 17,5 0, , , , ,18 14,0 11,4 18,0 0, , , , ,17 14,0 11,5 IFAG IMM RPD D HIR 5 of 8 V3, August 2011
6 Typical Common Source S-Parameters (continued) -06: V DS = 2 V, I D = 15 ma, Z o f S11 <S11 S21 <S21 S12 <S12 S22 <S22 k-fact. S 21 /S 12 MAG [GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [db] [db] 0,5 0, , , , ,42 27,4 1,0 0, , , , ,42 24,5 1,5 0, , , , ,44 22,8 2,0 0, , , , ,46 21,6 2,5 0, , , , ,48 20,6 3,0 0, , , , ,50 19,8 3,5 0, , , , ,52 19,1 4,0 0, , , , ,55 18,6 4,5 0, , , , ,58 18,1 5,0 0, , , , ,60 17,7 5,5 0, , , , ,63 17,3 6,0 0, , , , ,66 17,0 6,5 0, , , , ,69 16,7 7,0 0, , , , ,73 16,4 7,5 0, , , , ,77 16,2 8,0 0, , , , ,80 15,9 8,5 0, , , , ,83 15,8 9,0 0, , , , ,86 15,6 9,5 0, , , , ,90 15,4 10,0 0, , , , ,92 15,3 10,5 0, , , , ,95 15,1 11,0 0, , , , ,98 15,0 11,5 0, , , , ,00 14,9 12,0 0, , , , ,02 14,8 13,8 12,5 0, , , , ,05 14,6 13,3 13,0 0, , , , ,07 14,5 12,9 13,5 0, , , , ,10 14,4 12,5 14,0 0, , , , ,12 14,3 12,2 14,5 0, , , , ,14 14,2 12,0 15,0 0, , , , ,15 14,1 11,8 15,5 0, , , , ,16 14,1 11,6 16,0 0, , , , ,17 14,0 11,5 16,5 0, , , , ,17 13,9 11,4 17,0 0, , , , ,17 13,9 11,4 17,5 0, , , , ,16 13,9 11,5 18,0 0, , , , ,14 13,8 11,6 IFAG IMM RPD D HIR 6 of 8 V3, August 2011
7 Typical Common Source Noise-Parameters -08: V DS = 2 V, I D = 15 ma, Z o f NF min opt opt R n [GHz] [db] [magn] [angle] 1 0,29 0, ,60 2 0,30 0, ,65 3 0,34 0, ,56 4 0,38 0, ,10 5 0,41 0, ,53 6 0,46 0, ,86 7 0,50 0, ,16 8 0,55 0, ,62 9 0,60 0, , ,64 0, , ,69 0, , ,73 0, , ,78 0, , ,84 0, , ,88 0, , ,93 0, , ,99 0, , ,05 0, ,61 IFAG IMM RPD D HIR 7 of 8 V3, August 2011
8 Micro-X Package Edition Published by Infineon Technologies AG Neubiberg, Germany Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IMM RPD D HIR 8 of 8 V3, August 2011
Data Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices
Data Sheet, Rev. 2.3, Sept. 2011 BGA428 Gain and PCS Low Noise Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG
Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition
Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes
Data Sheet, Rev. 2.2, April 2008 BGA622L7 Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection Small Signal Discretes Edition 2008-04-14 Published by Infineon Technologies AG, 81726
Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23
Low Noise Silicon Bipolar RF Transistor For low noise, highgain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, NF min = 1 db at 900 MHz Pbfree (RoHS compliant) package Qualification
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma Power amplifiers for DECT and
Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices
Data Sheet, Rev..1, Sept. 11 BGA61 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 11-9- Published by Infineon Technologies AG, 176 München, Germany Infineon Technologies AG
Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143
Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to.5 GHz at collector currents from 4 3 0 ma to 80 ma Power amplifier
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS
BAT5... Silicon Schottky Diodes Low barrier type for DBS mixer applications up to GHz, phase detectors and modulators Low noise figure Pb-free (RoHS compliant) package BAT5-EL BAT5-ELS BAT5-W BAT5-4W BAT5-5W
Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343
BFPESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier High ESD robustness typical value V (HBM) Outstanding G ms =. db @.8 GHz Minimum noise figure NF min =.9 db
Data sheet, BGA614, Nov BGA614. Silicon Germanium Broadband MMIC Amplifier MMIC. Secure Mobile Solutions Silicon Discretes. Never stop thinking.
Data sheet, BGA61, Nov. 3 BGA61 Silicon Germanium Broadband MMIC Amplifier MMIC Secure Mobile Solutions Silicon Discretes Never stop thinking. Edition 311 Published by Infineon Technologies AG, St.MartinStrasse
Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23
NPN Bipolar RF Transistor For broadband amplifiers up to 2 GHz and fast nonsaturated switches at collector currents from 0.5 ma to 20 ma 3 1 2 Pbfree (RoHS compliant) package Qualification report according
BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package
Silicon Schottky Diode For mixer applications in VHF/UHF range For highspeed switching application Pbfree (RoHS compliant) package BAT17 BAT17 BAT17W BAT175 BAT175W BAT176W BAT177 " ESD (Electrostatic
The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.
Product description The is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. Feature list Unique combination of high end RF performance
Preliminary Data Sheet, Rev.2.2, Oct BGM681L11. GPS Front-End with high Out-of-Band Attenuation. Small Signal Discretes
Preliminary Data Sheet, Rev.2.2, Oct. 2008 BGM681L11 GPS Front-End with high Out-of-Band Attenuation Small Signal Discretes Edition 2008-10-09 Published by Infineon Technologies AG 81726 München, Germany
BF776. High Performance NPN Bipolar RF Transistor
High Performance NPN Bipolar RF Transistor High performance low noise amplifier Low minimum noise figure of typ. 0.8 db @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB,
BFG235. NPN Silicon RF Transistor*
NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT
BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package
Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68- BAT68-W BAT68-6 BAT68-6W BAT68-7W BAT68-8S!!! "!
For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications
Features Maximum collector-emitter voltage V CE0 = 15 V Maximum collector current I C = 25 ma Noise figure NF = 3.5 db 3rd order output intercept point OIP 3 = 21.5 dbm 1 db output compression point P
Robust low noise broadband pre-matched RF bipolar transistor
Product description The is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: dbm maximum RF
BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W
BAS4.../BAS4W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing Pb-free (RoHS compliant) package Qualified according
Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343
BCRW Active Bias Controller Characteristics Supplies stable bias current even at low battery voltage and extreme ambient temperature variation Low voltage drop of.7v Application notes Stabilizing bias
OptiMOS 2 Power-Transistor
IPI9N3LA, IPP9N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min = 1 db at 5.5 GHz, 3 V, 6 ma High gain G ms = 21 db at 5.5 GHz, 3 V, 15 ma OIP
Data Sheet, Rev.3.2, Oct BGM781N11. GPS Front-End Module. RF & Protection Devices
Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All
Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications
Product description The BGB74L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineon s silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure
BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency f T of
BGA5L1BN6 BGA5L1BN6. 18dB High Gain Low Noise Amplifier for LTE Lowband VCC GND. Features
BGA5L1BN6 Features Operating frequencies: 600-1000 MHz Insertion power gain: 18.5 db Insertion Loss in bypass mode: 2.7 db Low noise figure: 0.7 db Low current consumption: 8.2 ma Multi-state control:
BFP620. Low Noise SiGe:C Bipolar RF Transistor
Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP7 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NF min =.8 db at. GHz, 3 V, 6 ma High gain G ms = 9. db at. GHz, 3 V, ma OIP 3 =.
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination
BGA855N6 BGA855N6. Low Noise Amplifier for Lower L-Band GNSS Applications GND. Features
Features Operating frequencies: 1164-1300 MHz Insertion power gain: 17.8dB Low noise figure: 0.60 db High linearity performance IIP3: 0 dbm Low current consumption: 4.8 ma Ultra small TSNP-6-10 leadless
Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,
Ω Ω Ω Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1, 2008-10-02 Data Sheet 2 Rev. 1.1, 2008-10-02 Data Sheet 3 Rev. 1.1, 2008-10-02 Ω Ω Ω Ω Ω Ω ± ± ± Ω μ Data Sheet 4 Rev. 1.1, 2008-10-02 = Ω Ω
Drain Efficiency (%) c262157sh-gr1. Characteristic Symbol Min Typ Max Unit. Gain Gps db. Adjacent Channel Power Ratio ACPR 31.
c2657sh-gr1 Thermally-Enhanced High Power RF LDMOS FET W, 28 V, 26 269 MHz Description The LDMOS FET is designed for use in Doherty cellular power applications in the 26 MHz to 269 MHz frequency band.
Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package
Smart High-Side Power Switch BTS4140N
Ω Ω 4 2 1 PG-SOT-223 AEC qualified Green product (RoHS compliant) 3 VPS05163 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated
Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74
LED Driver Supplies stable bias current even at low battery voltage Ideal for stabilizing bias current of LEDs Negative temperature coefficient protects 4 5 6 3 LEDs against thermal overload Suitable for
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
BFP7 NPN Silicon Germanium RF Transistor High gain ultra low noise RF transistor Provides outstanding performance for a wide range of wireless applications up to GHz and more Ideal for CDMA and WLAN applications
Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
BGA123L4 Small Footprint Ultra Low Current Low Noise Amplifier for Global Navigation Satellite Systems (GNSS) Features Operating frequencies: 1550-1615 MHz Ultra low current consumption: 1.1 ma Wide supply
Efficiency (%) Characteristic Symbol Min Typ Max Units
PTF181 LDMOS RF Power Field Effect Transistor W, 185 188 MHz, 193 199 MHz W, 21 217 MHz Description Features The PTF181 is a W, internally matched GOLDMOS FET device intended for EDGE applications in the
BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W
BAS7.../BAS7W Silicon Schottky Diode General-purpose diode for high-speed switching Circuirotection Voltage clamping High-level detecting and mixing BAS7-S: For orientation in reel see package information
Low Drop Voltage Regulator TLE 4274
Low Drop Voltage Regulator TLE 4274 Features Output voltage 5 V, 8.5 V or 1 V Output voltage tolerance ±4% Current capability 4 Low-drop voltage Very low current consumption Short-circuit proof Reverse
BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W
Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz
IRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
BCR401R LED Driver Features Applications General Description
LED Driver Features LED drive current of ma Output current adjustable up to 60mA with external resistor Supply voltage up to 8V Easy paralleling of drivers to increase current Low voltage overhead of.v
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low current applications Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure F = 1.25 db at 1.8 GHz outstanding G ms = 23 db at 1.8 GHz Transition frequency f T = 25 GHz Gold
BGB420, Aug BGB420. Active Biased Transistor MMIC. Wireless Silicon Discretes. Never stop thinking.
, Aug. 2001 BGB420 Active Biased Transistor MMIC Wireless Silicon Discretes Never stop thinking. Edition 2001-08-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München Infineon
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.1, 2011-09-08 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient
IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy
Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
Technical Report <TR130>
, 2009-Apr-23 Technical Report Technical Report Device: BGB741L7ESD Application: 50Ω-Matched LNA for FM Application 80-110MHz Revision: Rev. 1.0 Date: 2009-Apr-23 RF and Protection Devices Measurement
IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy
Drain Efficiency (%) c270101m-2.1-gr1c. Characteristic Symbol Min Typ Max Unit
c2711m-2.1-gr1c High Power RF LDMOS Field Effect Transistor 1 W, 28 V, 9 27 MHz Description The is an unmatched 1-watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to
BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3
BCR... NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor (R = kω, R = kω) BCRS: Two internally isolated transistors with good matching
TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz. P1dB Output p1db (Vds = 2V, Id = 10mA) 12 GHz dbm
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm) The BeRex BCL016B is a GaAs super low noise phemt with a nominal 0.15 micron gate length and 160 micron gate width making the product ideally suited for applications
Low Drop Voltage Regulator TLE
Low Drop Voltage Regulator TLE 4266-2 Features Fixed output voltage 5. V or 3.3 V Output voltage tolerance ±2%, ±3% 15 ma current capability Very low current consumption Low-drop voltage Overtemperature
24GHz Super Low Noise FET in Hollow Plastic PKG
RF Low Noise FET 24GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION Super Low Noise and High Gain Hollow (Air cavity) Plastic package PACKAGE Micro-X plastic package FEATURES Super Low noise figure
Efficiency (%) c201202fc-v2-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c12fc-v2-gr1a PXAC12FC Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 18 2 MHz Description The PXAC12FC is a 1-watt LDMOS FET for use in multistandard cellular power amplifier applications in the
Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2*
Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking
BCR129 BCR129S BCR129W
BCR9... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω) BCR9S: Two internally isolated transistors with good matching in one
BFP420. NPN Silicon RF Transistor
BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization
ESD0P2RF-02LRH ESD0P2RF-02LS
Bidirectional Ultra Low Capacitance TVS Diode ESD / transient protection of RF signal lines according to: IEC6004 (ESD): ±0kV (contact) IEC60044 (EFT): 40 A (5 / 50 ns) IEC60045 (Surge): 3 A (8 / 0 µs)
BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V
BCRU LED Driver Features LED drive current of Output current adjustable up to 5 with external resistor 5 3 Supply voltage up to V Easy paralleling of drivers to increase current Low voltage overhead of.v
Fiber Optics. Plastic Fiber Optic Transmitter Diode Plastic Connector Housing SFH756 SFH756V
Fiber Optics Plastic Fiber Optic Transmitter Diode Plastic Connector Housing SFH756 Features 2.2 mm Aperture holds Standard 1000 Micron Plastic Fiber No Fiber Stripping Required Good Linearity (Forward
TLE4916-1K. Datasheet. Sense & Control. Low Power Automotive Hall Switch. Rev.1.0,
Low Power Automotive Hall Switch Datasheet Rev.1.0, 2010-02-23 Sense & Control This datasheet has been downloaded from http://www.digchip.com at this page Edition 2010-02-23 Published by Infineon Technologies
IRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
January 2009 TLE4906K / TLE4906L. High Precision Hall Effect Switch. Data Sheet V 2.0. Sensors
January 2009 TLE4906K / High Precision Hall Effect Switch Data Sheet V 2.0 Sensors Edition 2009-01 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.
Data Sheet, V 1.1, Oct TLE4906H TLE4906L. High Precision Hall-Effect Switch. Sensors
Data Sheet, V 1.1, Oct. 2005 TLE4906H High Precision Hall-Effect Switch Sensors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient
TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand
HITFET BTS3800SL. Datasheet. Automotive. Smart Low Side Power Switch. Small Protected Automotive Relay Driver Single Channel, 800mΩ
HITFET Smart Low Side Power Switch BTS3800SL Small Protected Automotive Relay Driver Single Channel, 800mΩ Datasheet Rev. 1.1, 2011-04-30 Automotive 1 Overview.......................................................................
BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.
BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching
Part Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6
PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
R 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
IRFYB9130C, IRFYB9130CM
PD-97896 IRFYB9130C, IRFYB9130CM POWER MOSFET THRU-HOLE (TO-257AA Low-Ohmic Tabless) 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D Eyelets IRFYB9130C 0.30-11.2A Ceramic
Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) Pbfree (RoHS compliant) package Qualified according AEC
Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device
2007-05-23 Green Laser Diode in TO56 Package Version 0.2 Features Optical output power (continuous wave): 80 mw (T case = 25 C) Typical emission wavelength: 520 nm Efficient radiation source for cw and
2N7622U2 IRHLNA797064
PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
Tracking Regulator TLE 4252
Tracking Regulator TLE 4252 Features Output tracking tolerance to reference ±0.2% Output voltage adjust down to 1.5 V 250 ma output current capability Enable function Very low current consumption in OFF
R 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.
PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
Absolute Maximum Ratings (Per Die)
PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
AUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
BGB741L7ESD. ESD-Robust and Easy-To-Use Broadband LNA MMIC. RF & Protection Devices. Data Sheet, Rev. 1.0, April 2009
Data Sheet, Rev. 1.0, April 2009 BGB741L7ESD ESD-Robust and Easy-To-Use Broadband LNA MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon
BFP405. NPN Silicon RF Transistor
BFP5 NPN Silicon RF Transistor For low current applications For oscillators up to GHz Noise figure F =.5 db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for
AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
IRHLNM7S7110 2N7609U8
PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3
Data Sheet, V1.0, Aug SMM310. Silicon MEMS Microphone. Small Signal Discretes
Data Sheet, V1.0, Aug. 2007 Small Signal Discretes Edition 2007-08-31 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The
BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) BCRU: Two internally isolated transistors with good matching
Application Note No. 149
Application Note, Rev. 1.2, February 2008 1.8 V, 2.6 ma Low Noise Amplifier for 1575 MHz GPS L1 Frequency with the BFP405 RF Transistor Small Signal Discretes Edition 2008-02-22 Published by Infineon Technologies
Dual Low Drop Voltage Regulator TLE 4476
Dual Low Drop oltage Regulator TLE 4476 Features Output 1: 350 ma; 3.3 ± 4% Output 2: 430 ma; 5.0 ± 4% Enable input for output 2 Low quiescent current in OFF state Wide operation range: up to 42 Reverse
I D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
Power Charge Pump and Low Drop Voltage Regulator TLE 4307
Power Charge Pump and Low Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit Very Low Drop